KR101618354B1 - Cmp 패드 두께 및 프로파일 모니터링 시스템 - Google Patents

Cmp 패드 두께 및 프로파일 모니터링 시스템 Download PDF

Info

Publication number
KR101618354B1
KR101618354B1 KR1020107027520A KR20107027520A KR101618354B1 KR 101618354 B1 KR101618354 B1 KR 101618354B1 KR 1020107027520 A KR1020107027520 A KR 1020107027520A KR 20107027520 A KR20107027520 A KR 20107027520A KR 101618354 B1 KR101618354 B1 KR 101618354B1
Authority
KR
South Korea
Prior art keywords
processing surface
substrate processing
conditioning
pad
uniform
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020107027520A
Other languages
English (en)
Korean (ko)
Other versions
KR20110021861A (ko
Inventor
안토이네 피. 마넨스
웨이-융 수
히쳄 마'사아드
Original Assignee
어플라이드 머티어리얼스, 인코포레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 어플라이드 머티어리얼스, 인코포레이티드 filed Critical 어플라이드 머티어리얼스, 인코포레이티드
Publication of KR20110021861A publication Critical patent/KR20110021861A/ko
Application granted granted Critical
Publication of KR101618354B1 publication Critical patent/KR101618354B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B53/00—Devices or means for dressing or conditioning abrasive surfaces
    • B24B53/017—Devices or means for dressing, cleaning or otherwise conditioning lapping tools
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B53/00—Devices or means for dressing or conditioning abrasive surfaces
    • B24B53/12—Dressing tools; Holders therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Grinding-Machine Dressing And Accessory Apparatuses (AREA)
  • Machine Tool Sensing Apparatuses (AREA)
  • Length Measuring Devices With Unspecified Measuring Means (AREA)
KR1020107027520A 2008-05-08 2009-05-08 Cmp 패드 두께 및 프로파일 모니터링 시스템 Active KR101618354B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US5163408P 2008-05-08 2008-05-08
US61/051,634 2008-05-08

Publications (2)

Publication Number Publication Date
KR20110021861A KR20110021861A (ko) 2011-03-04
KR101618354B1 true KR101618354B1 (ko) 2016-05-04

Family

ID=41265437

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020107027520A Active KR101618354B1 (ko) 2008-05-08 2009-05-08 Cmp 패드 두께 및 프로파일 모니터링 시스템

Country Status (4)

Country Link
US (1) US8043870B2 (enExample)
JP (1) JP5481472B2 (enExample)
KR (1) KR101618354B1 (enExample)
WO (1) WO2009137764A2 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20190062262A (ko) * 2017-11-27 2019-06-05 타이완 세미콘덕터 매뉴팩쳐링 컴퍼니 리미티드 화학 기계적 연마를 위한 시스템, 제어 방법, 및 장치

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9138860B2 (en) * 2010-04-20 2015-09-22 Applied Materials, Inc. Closed-loop control for improved polishing pad profiles
JP5699597B2 (ja) * 2010-12-28 2015-04-15 株式会社Sumco 両面研磨装置
US20120270474A1 (en) * 2011-04-20 2012-10-25 Nanya Technology Corporation Polishing pad wear detecting apparatus
US20120270477A1 (en) * 2011-04-22 2012-10-25 Nangoy Roy C Measurement of pad thickness and control of conditioning
JP5896625B2 (ja) 2011-06-02 2016-03-30 株式会社荏原製作所 研磨装置に使用される研磨パッドの研磨面を監視する方法および装置
US20130017762A1 (en) * 2011-07-15 2013-01-17 Infineon Technologies Ag Method and Apparatus for Determining a Measure of a Thickness of a Polishing Pad of a Polishing Machine
JP6091773B2 (ja) * 2012-06-11 2017-03-08 株式会社東芝 半導体装置の製造方法
US20140329439A1 (en) * 2013-05-01 2014-11-06 Applied Materials, Inc. Apparatus and methods for acoustical monitoring and control of through-silicon-via reveal processing
US9312142B2 (en) * 2014-06-10 2016-04-12 Globalfoundries Inc. Chemical mechanical polishing method and apparatus
US9669514B2 (en) * 2015-05-29 2017-06-06 Taiwan Semiconductor Manufacturing Co., Ltd System and method for polishing substrate
TW201819107A (zh) * 2016-08-26 2018-06-01 美商應用材料股份有限公司 用於化學機械研磨的研磨墊厚度監測
US11504821B2 (en) 2017-11-16 2022-11-22 Applied Materials, Inc. Predictive filter for polishing pad wear rate monitoring
US11389928B2 (en) * 2017-11-30 2022-07-19 Taiwan Semiconductor Manufacturing Co., Ltd. Method for conditioning polishing pad
JP7287977B2 (ja) * 2018-03-14 2023-06-06 アプライド マテリアルズ インコーポレイテッド パッドコンディショナカット速度監視
KR102601619B1 (ko) 2018-11-12 2023-11-13 삼성전자주식회사 연마 패드 모니터링 방법 및 연마 패드 모니터링 장치
US11359906B2 (en) * 2020-05-29 2022-06-14 Ta Liang Technology Co., Ltd. Method, system and apparatus for uniformed surface measurement
US11794305B2 (en) 2020-09-28 2023-10-24 Applied Materials, Inc. Platen surface modification and high-performance pad conditioning to improve CMP performance
KR102909307B1 (ko) * 2020-10-26 2026-01-08 주식회사 케이씨텍 연마 패드 모니터링 장치 및 이를 포함하는 기판 연마 시스템
JP7885663B2 (ja) * 2022-11-28 2026-07-07 株式会社Sumco ワークの片面研磨装置、ワークの片面研磨方法、シリコンウェーハの製造方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003200342A (ja) 2001-12-28 2003-07-15 Tokyo Seimitsu Co Ltd ウェーハ加工装置用コンディショナー装置
KR100630754B1 (ko) 2005-07-15 2006-10-02 삼성전자주식회사 슬러리 유막 두께 변화량을 이용한 연마패드의 마모 및마찰 측정방법 및 장치

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3489272B2 (ja) * 1995-06-16 2004-01-19 ソニー株式会社 研磨装置およびこれを用いた研磨方法
US5875559A (en) * 1995-10-27 1999-03-02 Applied Materials, Inc. Apparatus for measuring the profile of a polishing pad in a chemical mechanical polishing system
JPH1086056A (ja) * 1996-09-11 1998-04-07 Speedfam Co Ltd 研磨パッドの管理方法及び装置
US6045434A (en) * 1997-11-10 2000-04-04 International Business Machines Corporation Method and apparatus of monitoring polishing pad wear during processing
JP3821985B2 (ja) * 1998-05-07 2006-09-13 株式会社荏原製作所 ポリッシング装置
JPH11333697A (ja) * 1998-05-28 1999-12-07 Nkk Corp Ｃｍｐ装置のドレッサーシステム
SE517293C2 (sv) * 1999-06-30 2002-05-21 Abb Ab Förfarande och anordning för induktiv mätning av geometrisk dimension och elektrisk egenskap med motriktade magnetfält
JP2001079752A (ja) * 1999-09-08 2001-03-27 Hitachi Ltd 化学的機械研磨装置およびこれを用いた半導体集積回路装置の製造方法
JP2001096455A (ja) * 1999-09-28 2001-04-10 Ebara Corp 研磨装置
US6517414B1 (en) * 2000-03-10 2003-02-11 Appied Materials, Inc. Method and apparatus for controlling a pad conditioning process of a chemical-mechanical polishing apparatus
US6616513B1 (en) * 2000-04-07 2003-09-09 Applied Materials, Inc. Grid relief in CMP polishing pad to accurately measure pad wear, pad profile and pad wear profile
EP1270148A1 (en) * 2001-06-22 2003-01-02 Infineon Technologies SC300 GmbH & Co. KG Arrangement and method for conditioning a polishing pad
JP2003019657A (ja) * 2001-07-06 2003-01-21 Toshiba Corp ドレッシング方法及び研磨装置
TW574085B (en) * 2001-12-27 2004-02-01 Vanguard Int Semiconduct Corp Device and method for measuring and monitoring polishing pad
US6872132B2 (en) * 2003-03-03 2005-03-29 Micron Technology, Inc. Systems and methods for monitoring characteristics of a polishing pad used in polishing micro-device workpieces
JP2008284645A (ja) * 2007-05-17 2008-11-27 Tokyo Seimitsu Co Ltd 研磨装置および研磨方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003200342A (ja) 2001-12-28 2003-07-15 Tokyo Seimitsu Co Ltd ウェーハ加工装置用コンディショナー装置
KR100630754B1 (ko) 2005-07-15 2006-10-02 삼성전자주식회사 슬러리 유막 두께 변화량을 이용한 연마패드의 마모 및마찰 측정방법 및 장치

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20190062262A (ko) * 2017-11-27 2019-06-05 타이완 세미콘덕터 매뉴팩쳐링 컴퍼니 리미티드 화학 기계적 연마를 위한 시스템, 제어 방법, 및 장치
US10792783B2 (en) 2017-11-27 2020-10-06 Taiwan Semiconductor Manufacturing Company, Ltd. System, control method and apparatus for chemical mechanical polishing
KR102251153B1 (ko) * 2017-11-27 2021-05-14 타이완 세미콘덕터 매뉴팩쳐링 컴퍼니 리미티드 화학 기계적 연마를 위한 시스템, 제어 방법, 및 장치

Also Published As

Publication number Publication date
JP5481472B2 (ja) 2014-04-23
KR20110021861A (ko) 2011-03-04
WO2009137764A2 (en) 2009-11-12
JP2011519747A (ja) 2011-07-14
US20090280580A1 (en) 2009-11-12
WO2009137764A3 (en) 2010-02-25
US8043870B2 (en) 2011-10-25

Similar Documents

Publication Publication Date Title
US8043870B2 (en) CMP pad thickness and profile monitoring system
KR101738885B1 (ko) 개선된 폴리싱 패드 프로파일들을 위한 폐쇄-루프 제어
TWI839348B (zh) 墊調節器的切割速率監控
US7790015B2 (en) Endpoint for electroprocessing
US7201635B2 (en) Methods and systems for conditioning planarizing pads used in planarizing substrates
US8337279B2 (en) Closed-loop control for effective pad conditioning
US20080038999A1 (en) Retaining ring with conductive portion
CN111230729A (zh) 基板处理装置
CN111132802A (zh) 用于抛光垫磨损率监测的预测滤波器
US20060163074A1 (en) Algorithm for real-time process control of electro-polishing
KR100857661B1 (ko) 전도성 패드상의 컨디셔닝 스위핑 프로파일을 조정함으로써제거 프로파일을 조절하는 방법
JP4682449B2 (ja) 化学的機械的研磨方法及び化学的機械的研磨装置
US7407433B2 (en) Pad characterization tool
JP2000061838A (ja) ドレッシング装置および方法
US20070095677A1 (en) Electrochemical method for ecmp polishing pad conditioning
US7699972B2 (en) Method and apparatus for evaluating polishing pad conditioning
JP2002337046A (ja) 研磨装置、研磨方法および半導体装置の製造方法

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

A201 Request for examination
PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U12-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 7

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 8

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 9

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 10

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 11

U11 Full renewal or maintenance fee paid

Free format text: ST27 STATUS EVENT CODE: A-4-4-U10-U11-OTH-PR1001 (AS PROVIDED BY THE NATIONAL OFFICE)

Year of fee payment: 11

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000