JP5481472B2 - Ｃｍｐパッド厚みおよびプロファイル監視システム - Google Patents

Ｃｍｐパッド厚みおよびプロファイル監視システム Download PDF

Info

Publication number
JP5481472B2
JP5481472B2 JP2011508704A JP2011508704A JP5481472B2 JP 5481472 B2 JP5481472 B2 JP 5481472B2 JP 2011508704 A JP2011508704 A JP 2011508704A JP 2011508704 A JP2011508704 A JP 2011508704A JP 5481472 B2 JP5481472 B2 JP 5481472B2
Authority
JP
Japan
Prior art keywords
substrate processing
processing surface
conditioning
pad
uniform
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2011508704A
Other languages
English (en)
Japanese (ja)
Other versions
JP2011519747A (ja
JP2011519747A5 (enExample
Inventor
アントワーヌ， ピー． マネンス，
ウェイ−ユン スー，
ハイチェム ムサード，
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of JP2011519747A publication Critical patent/JP2011519747A/ja
Publication of JP2011519747A5 publication Critical patent/JP2011519747A5/ja
Application granted granted Critical
Publication of JP5481472B2 publication Critical patent/JP5481472B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B53/00—Devices or means for dressing or conditioning abrasive surfaces
    • B24B53/017—Devices or means for dressing, cleaning or otherwise conditioning lapping tools
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B53/00—Devices or means for dressing or conditioning abrasive surfaces
    • B24B53/12—Dressing tools; Holders therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Grinding-Machine Dressing And Accessory Apparatuses (AREA)
  • Machine Tool Sensing Apparatuses (AREA)
  • Length Measuring Devices With Unspecified Measuring Means (AREA)
JP2011508704A 2008-05-08 2009-05-08 Ｃｍｐパッド厚みおよびプロファイル監視システム Active JP5481472B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US5163408P 2008-05-08 2008-05-08
US61/051,634 2008-05-08
PCT/US2009/043288 WO2009137764A2 (en) 2008-05-08 2009-05-08 Cmp pad thickness and profile monitoring system

Publications (3)

Publication Number Publication Date
JP2011519747A JP2011519747A (ja) 2011-07-14
JP2011519747A5 JP2011519747A5 (enExample) 2012-06-21
JP5481472B2 true JP5481472B2 (ja) 2014-04-23

Family

ID=41265437

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011508704A Active JP5481472B2 (ja) 2008-05-08 2009-05-08 Ｃｍｐパッド厚みおよびプロファイル監視システム

Country Status (4)

Country Link
US (1) US8043870B2 (enExample)
JP (1) JP5481472B2 (enExample)
KR (1) KR101618354B1 (enExample)
WO (1) WO2009137764A2 (enExample)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9138860B2 (en) * 2010-04-20 2015-09-22 Applied Materials, Inc. Closed-loop control for improved polishing pad profiles
JP5699597B2 (ja) * 2010-12-28 2015-04-15 株式会社Sumco 両面研磨装置
US20120270474A1 (en) * 2011-04-20 2012-10-25 Nanya Technology Corporation Polishing pad wear detecting apparatus
US20120270477A1 (en) * 2011-04-22 2012-10-25 Nangoy Roy C Measurement of pad thickness and control of conditioning
JP5896625B2 (ja) 2011-06-02 2016-03-30 株式会社荏原製作所 研磨装置に使用される研磨パッドの研磨面を監視する方法および装置
US20130017762A1 (en) * 2011-07-15 2013-01-17 Infineon Technologies Ag Method and Apparatus for Determining a Measure of a Thickness of a Polishing Pad of a Polishing Machine
JP6091773B2 (ja) * 2012-06-11 2017-03-08 株式会社東芝 半導体装置の製造方法
US20140329439A1 (en) * 2013-05-01 2014-11-06 Applied Materials, Inc. Apparatus and methods for acoustical monitoring and control of through-silicon-via reveal processing
US9312142B2 (en) * 2014-06-10 2016-04-12 Globalfoundries Inc. Chemical mechanical polishing method and apparatus
US9669514B2 (en) * 2015-05-29 2017-06-06 Taiwan Semiconductor Manufacturing Co., Ltd System and method for polishing substrate
TW201819107A (zh) * 2016-08-26 2018-06-01 美商應用材料股份有限公司 用於化學機械研磨的研磨墊厚度監測
US11504821B2 (en) 2017-11-16 2022-11-22 Applied Materials, Inc. Predictive filter for polishing pad wear rate monitoring
US10792783B2 (en) * 2017-11-27 2020-10-06 Taiwan Semiconductor Manufacturing Company, Ltd. System, control method and apparatus for chemical mechanical polishing
US11389928B2 (en) * 2017-11-30 2022-07-19 Taiwan Semiconductor Manufacturing Co., Ltd. Method for conditioning polishing pad
JP7287977B2 (ja) * 2018-03-14 2023-06-06 アプライド マテリアルズ インコーポレイテッド パッドコンディショナカット速度監視
KR102601619B1 (ko) 2018-11-12 2023-11-13 삼성전자주식회사 연마 패드 모니터링 방법 및 연마 패드 모니터링 장치
US11359906B2 (en) * 2020-05-29 2022-06-14 Ta Liang Technology Co., Ltd. Method, system and apparatus for uniformed surface measurement
US11794305B2 (en) 2020-09-28 2023-10-24 Applied Materials, Inc. Platen surface modification and high-performance pad conditioning to improve CMP performance
KR102909307B1 (ko) * 2020-10-26 2026-01-08 주식회사 케이씨텍 연마 패드 모니터링 장치 및 이를 포함하는 기판 연마 시스템
JP7885663B2 (ja) * 2022-11-28 2026-07-07 株式会社Sumco ワークの片面研磨装置、ワークの片面研磨方法、シリコンウェーハの製造方法

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3489272B2 (ja) * 1995-06-16 2004-01-19 ソニー株式会社 研磨装置およびこれを用いた研磨方法
US5875559A (en) * 1995-10-27 1999-03-02 Applied Materials, Inc. Apparatus for measuring the profile of a polishing pad in a chemical mechanical polishing system
JPH1086056A (ja) * 1996-09-11 1998-04-07 Speedfam Co Ltd 研磨パッドの管理方法及び装置
US6045434A (en) * 1997-11-10 2000-04-04 International Business Machines Corporation Method and apparatus of monitoring polishing pad wear during processing
JP3821985B2 (ja) * 1998-05-07 2006-09-13 株式会社荏原製作所 ポリッシング装置
JPH11333697A (ja) * 1998-05-28 1999-12-07 Nkk Corp Ｃｍｐ装置のドレッサーシステム
SE517293C2 (sv) * 1999-06-30 2002-05-21 Abb Ab Förfarande och anordning för induktiv mätning av geometrisk dimension och elektrisk egenskap med motriktade magnetfält
JP2001079752A (ja) * 1999-09-08 2001-03-27 Hitachi Ltd 化学的機械研磨装置およびこれを用いた半導体集積回路装置の製造方法
JP2001096455A (ja) * 1999-09-28 2001-04-10 Ebara Corp 研磨装置
US6517414B1 (en) * 2000-03-10 2003-02-11 Appied Materials, Inc. Method and apparatus for controlling a pad conditioning process of a chemical-mechanical polishing apparatus
US6616513B1 (en) * 2000-04-07 2003-09-09 Applied Materials, Inc. Grid relief in CMP polishing pad to accurately measure pad wear, pad profile and pad wear profile
EP1270148A1 (en) * 2001-06-22 2003-01-02 Infineon Technologies SC300 GmbH & Co. KG Arrangement and method for conditioning a polishing pad
JP2003019657A (ja) * 2001-07-06 2003-01-21 Toshiba Corp ドレッシング方法及び研磨装置
TW574085B (en) * 2001-12-27 2004-02-01 Vanguard Int Semiconduct Corp Device and method for measuring and monitoring polishing pad
JP2003200342A (ja) 2001-12-28 2003-07-15 Tokyo Seimitsu Co Ltd ウェーハ加工装置用コンディショナー装置
US6872132B2 (en) * 2003-03-03 2005-03-29 Micron Technology, Inc. Systems and methods for monitoring characteristics of a polishing pad used in polishing micro-device workpieces
KR100630754B1 (ko) * 2005-07-15 2006-10-02 삼성전자주식회사 슬러리 유막 두께 변화량을 이용한 연마패드의 마모 및마찰 측정방법 및 장치
JP2008284645A (ja) * 2007-05-17 2008-11-27 Tokyo Seimitsu Co Ltd 研磨装置および研磨方法

Also Published As

Publication number Publication date
KR101618354B1 (ko) 2016-05-04
KR20110021861A (ko) 2011-03-04
WO2009137764A2 (en) 2009-11-12
JP2011519747A (ja) 2011-07-14
US20090280580A1 (en) 2009-11-12
WO2009137764A3 (en) 2010-02-25
US8043870B2 (en) 2011-10-25

Similar Documents

Publication Publication Date Title
US8043870B2 (en) CMP pad thickness and profile monitoring system
KR101738885B1 (ko) 개선된 폴리싱 패드 프로파일들을 위한 폐쇄-루프 제어
US7790015B2 (en) Endpoint for electroprocessing
TWI839348B (zh) 墊調節器的切割速率監控
US6872132B2 (en) Systems and methods for monitoring characteristics of a polishing pad used in polishing micro-device workpieces
US8292691B2 (en) Use of pad conditioning in temperature controlled CMP
US7201635B2 (en) Methods and systems for conditioning planarizing pads used in planarizing substrates
US5975994A (en) Method and apparatus for selectively conditioning a polished pad used in planarizng substrates
US8337279B2 (en) Closed-loop control for effective pad conditioning
TW201819107A (zh) 用於化學機械研磨的研磨墊厚度監測
US20050282322A1 (en) Retaining ring with conductive portion
US7628905B2 (en) Algorithm for real-time process control of electro-polishing
KR100857661B1 (ko) 전도성 패드상의 컨디셔닝 스위핑 프로파일을 조정함으로써제거 프로파일을 조절하는 방법
US7699972B2 (en) Method and apparatus for evaluating polishing pad conditioning
JP2000000757A (ja) 研磨装置及び研磨方法
JP2002337046A (ja) 研磨装置、研磨方法および半導体装置の製造方法
TW202446545A (zh) 壓電墊監測裝置及半導體製程工具的操作方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20120426

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20120426

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20130717

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20130723

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20131022

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20131029

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20131210

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20140121

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20140217

R150 Certificate of patent or registration of utility model

Ref document number: 5481472

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250