JP2011513772A5 - - Google Patents

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Publication number
JP2011513772A5
JP2011513772A5 JP2010547750A JP2010547750A JP2011513772A5 JP 2011513772 A5 JP2011513772 A5 JP 2011513772A5 JP 2010547750 A JP2010547750 A JP 2010547750A JP 2010547750 A JP2010547750 A JP 2010547750A JP 2011513772 A5 JP2011513772 A5 JP 2011513772A5
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JP
Japan
Prior art keywords
coating layer
antireflection coating
value
antireflection
antireflective
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2010547750A
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English (en)
Japanese (ja)
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JP2011513772A (ja
JP4918162B2 (ja
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Priority claimed from PCT/US2009/034540 external-priority patent/WO2009105556A2/en
Publication of JP2011513772A publication Critical patent/JP2011513772A/ja
Publication of JP2011513772A5 publication Critical patent/JP2011513772A5/ja
Application granted granted Critical
Publication of JP4918162B2 publication Critical patent/JP4918162B2/ja
Active legal-status Critical Current
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JP2010547750A 2008-02-22 2009-02-19 193nmリソグラフィー用の二重層の感光性で現像液に可溶な底面反射防止塗膜 Active JP4918162B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US3083008P 2008-02-22 2008-02-22
US61/030,830 2008-02-22
PCT/US2009/034540 WO2009105556A2 (en) 2008-02-22 2009-02-19 Dual-layer light-sensitive developer-soluble bottom anti-reflective coatings for 193-nm lithography

Publications (3)

Publication Number Publication Date
JP2011513772A JP2011513772A (ja) 2011-04-28
JP2011513772A5 true JP2011513772A5 (enExample) 2011-06-16
JP4918162B2 JP4918162B2 (ja) 2012-04-18

Family

ID=40986181

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010547750A Active JP4918162B2 (ja) 2008-02-22 2009-02-19 193nmリソグラフィー用の二重層の感光性で現像液に可溶な底面反射防止塗膜

Country Status (7)

Country Link
US (1) US9638999B2 (enExample)
EP (1) EP2255377B1 (enExample)
JP (1) JP4918162B2 (enExample)
KR (1) KR101697789B1 (enExample)
CN (1) CN101952936B (enExample)
TW (1) TWI430051B (enExample)
WO (1) WO2009105556A2 (enExample)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090098490A1 (en) * 2007-10-16 2009-04-16 Victor Pham Radiation-Sensitive, Wet Developable Bottom Antireflective Coating Compositions and Their Applications in Semiconductor Manufacturing
JP5840954B2 (ja) 2009-02-19 2016-01-06 ブルーワー サイエンス アイ エヌシー. 酸感応性、現像剤可溶性の下層反射防止膜
US8877430B2 (en) * 2010-08-05 2014-11-04 Brewer Science Inc. Methods of producing structures using a developer-soluble layer with multilayer technology
JP5278406B2 (ja) * 2010-11-02 2013-09-04 信越化学工業株式会社 パターン形成方法
JP6035887B2 (ja) 2011-06-21 2016-11-30 セントラル硝子株式会社 ポジ型レジスト組成物
JP5751173B2 (ja) * 2012-01-05 2015-07-22 信越化学工業株式会社 パターン形成方法
JP6062878B2 (ja) * 2014-03-07 2017-01-18 信越化学工業株式会社 化学増幅型ポジ型レジスト組成物及びレジストパターン形成方法
US9229326B2 (en) * 2014-03-14 2016-01-05 Taiwan Semiconductor Manufacturing Company, Ltd. Method for integrated circuit patterning
KR102222818B1 (ko) 2014-10-06 2021-03-04 삼성전자주식회사 반도체 장치의 제조 방법
JP6641687B2 (ja) * 2014-12-01 2020-02-05 大日本印刷株式会社 カラーフィルタの製造方法およびブラックマトリクス基板の製造方法
WO2016179023A1 (en) * 2015-05-01 2016-11-10 Adarza Biosystems, Inc. Methods and devices for the high-volume production of silicon chips with uniform anti-reflective coatings
US9768022B2 (en) * 2016-01-27 2017-09-19 Taiwan Semiconductor Manufacturing Company, Ltd. Advanced cross-linkable layer over a substrate

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06230574A (ja) * 1993-02-05 1994-08-19 Fuji Photo Film Co Ltd ポジ型感光性組成物
JPH09205057A (ja) * 1996-01-25 1997-08-05 Hitachi Ltd 半導体装置の製造方法
JP3189773B2 (ja) * 1998-01-09 2001-07-16 三菱電機株式会社 レジストパターン形成方法及びこれを用いた半導体装置の製造方法並びに半導体装置
KR100421034B1 (ko) * 1999-04-21 2004-03-04 삼성전자주식회사 레지스트 조성물과 이를 이용한 미세패턴 형성방법
KR100337325B1 (ko) * 1999-12-30 2002-05-22 이계안 엔진의 고압 연료 분사 장치의 소음 저감 브라켓트
TW591341B (en) 2001-09-26 2004-06-11 Shipley Co Llc Coating compositions for use with an overcoated photoresist
US7265431B2 (en) * 2002-05-17 2007-09-04 Intel Corporation Imageable bottom anti-reflective coating for high resolution lithography
US20050214674A1 (en) * 2004-03-25 2005-09-29 Yu Sui Positive-working photoimageable bottom antireflective coating
US20050255410A1 (en) * 2004-04-29 2005-11-17 Guerrero Douglas J Anti-reflective coatings using vinyl ether crosslinkers
EP2592476A1 (en) * 2004-05-14 2013-05-15 Nissan Chemical Industries, Ltd. Antireflective coating forming composition containing vinyl ether compound and polyimide
JP4466879B2 (ja) 2004-12-03 2010-05-26 日産化学工業株式会社 二層型反射防止膜を用いたフォトレジストパターンの形成方法
EP1691238A3 (en) * 2005-02-05 2009-01-21 Rohm and Haas Electronic Materials, L.L.C. Coating compositions for use with an overcoated photoresist
US7816071B2 (en) * 2005-02-10 2010-10-19 Az Electronic Materials Usa Corp. Process of imaging a photoresist with multiple antireflective coatings
US20060177772A1 (en) * 2005-02-10 2006-08-10 Abdallah David J Process of imaging a photoresist with multiple antireflective coatings
US7816069B2 (en) * 2006-06-23 2010-10-19 International Business Machines Corporation Graded spin-on organic antireflective coating for photolithography

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