JP2011511459A5 - - Google Patents
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- Publication number
- JP2011511459A5 JP2011511459A5 JP2010545050A JP2010545050A JP2011511459A5 JP 2011511459 A5 JP2011511459 A5 JP 2011511459A5 JP 2010545050 A JP2010545050 A JP 2010545050A JP 2010545050 A JP2010545050 A JP 2010545050A JP 2011511459 A5 JP2011511459 A5 JP 2011511459A5
- Authority
- JP
- Japan
- Prior art keywords
- substrates
- susceptor
- substrate processing
- heating source
- gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims 50
- 239000007789 gas Substances 0.000 claims 23
- 238000000034 method Methods 0.000 claims 15
- 238000010438 heat treatment Methods 0.000 claims 12
- 238000005259 measurement Methods 0.000 claims 6
- 239000011261 inert gas Substances 0.000 claims 3
- 230000000903 blocking effect Effects 0.000 claims 1
- 238000002310 reflectometry Methods 0.000 claims 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12/023,520 US20090194024A1 (en) | 2008-01-31 | 2008-01-31 | Cvd apparatus |
| PCT/US2009/030858 WO2009099720A1 (en) | 2008-01-31 | 2009-01-13 | Cvd apparatus |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2011511459A JP2011511459A (ja) | 2011-04-07 |
| JP2011511459A5 true JP2011511459A5 (enExample) | 2012-03-01 |
Family
ID=40930407
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2010545050A Pending JP2011511459A (ja) | 2008-01-31 | 2009-01-13 | Cvd装置 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US20090194024A1 (enExample) |
| JP (1) | JP2011511459A (enExample) |
| KR (1) | KR101296317B1 (enExample) |
| CN (1) | CN101925980B (enExample) |
| TW (1) | TWI513852B (enExample) |
| WO (1) | WO2009099720A1 (enExample) |
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| CN102534567B (zh) | 2012-03-21 | 2014-01-15 | 中微半导体设备(上海)有限公司 | 控制化学气相沉积腔室内的基底加热的装置及方法 |
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| US9401271B2 (en) | 2012-04-19 | 2016-07-26 | Sunedison Semiconductor Limited (Uen201334164H) | Susceptor assemblies for supporting wafers in a reactor apparatus |
| US9082801B2 (en) * | 2012-09-05 | 2015-07-14 | Industrial Technology Research Institute | Rotatable locating apparatus with dome carrier and operating method thereof |
| US9373534B2 (en) | 2012-09-05 | 2016-06-21 | Industrial Technology Research Institute | Rotary positioning apparatus with dome carrier, automatic pick-and-place system, and operating method thereof |
| TW201437421A (zh) * | 2013-02-20 | 2014-10-01 | Applied Materials Inc | 用於旋轉料架原子層沉積之裝置以及方法 |
| KR101819095B1 (ko) * | 2013-03-15 | 2018-01-16 | 어플라이드 머티어리얼스, 인코포레이티드 | Epi 프로세스를 위한 균일성 튜닝 렌즈를 갖는 서셉터 지지 샤프트 |
| US9837250B2 (en) * | 2013-08-30 | 2017-12-05 | Applied Materials, Inc. | Hot wall reactor with cooled vacuum containment |
| KR102618822B1 (ko) * | 2013-09-06 | 2023-12-28 | 어플라이드 머티어리얼스, 인코포레이티드 | 원형 램프 어레이들 |
| US10047457B2 (en) * | 2013-09-16 | 2018-08-14 | Applied Materials, Inc. | EPI pre-heat ring |
| CN105981133B (zh) * | 2014-02-14 | 2019-06-28 | 应用材料公司 | 具有注入组件的上部圆顶 |
| CN104911565B (zh) * | 2014-03-11 | 2017-12-22 | 中微半导体设备(上海)有限公司 | 一种化学气相沉积装置 |
| US20160033070A1 (en) * | 2014-08-01 | 2016-02-04 | Applied Materials, Inc. | Recursive pumping member |
| KR101586937B1 (ko) * | 2014-08-12 | 2016-01-19 | 주식회사 엘지실트론 | 에피 웨이퍼 성장장치 |
| JP6210382B2 (ja) * | 2014-09-05 | 2017-10-11 | 信越半導体株式会社 | エピタキシャル成長装置 |
| EP4138121A1 (en) * | 2015-10-09 | 2023-02-22 | Applied Materials, Inc. | Diode laser for wafer heating for epi processes |
| US10727094B2 (en) * | 2016-01-29 | 2020-07-28 | Taiwan Semiconductor Manufacturing Co., Ltd | Thermal reflector device for semiconductor fabrication tool |
| TWI647760B (zh) * | 2016-03-22 | 2019-01-11 | 日商東京威力科創股份有限公司 | 電漿處理系統中之溫度控制用系統及方法 |
| TWI677593B (zh) * | 2016-04-01 | 2019-11-21 | 美商應用材料股份有限公司 | 用於提供均勻流動的氣體的設備及方法 |
| CN112840444A (zh) * | 2018-10-01 | 2021-05-25 | 应用材料公司 | 用于外延反应器的石英圆顶的净化的视口 |
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| CH634424A5 (fr) * | 1978-08-18 | 1983-01-31 | Nat Res Dev | Procede et appareil de detection et de commande de depot d'une pellicule fine. |
| JPH03129722A (ja) * | 1989-06-30 | 1991-06-03 | Showa Denko Kk | 気相成長装置 |
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| US5551985A (en) * | 1995-08-18 | 1996-09-03 | Torrex Equipment Corporation | Method and apparatus for cold wall chemical vapor deposition |
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| JPH1145859A (ja) * | 1997-07-28 | 1999-02-16 | Fujitsu Ltd | エピタキシャル成長装置 |
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| US8536492B2 (en) * | 2003-10-27 | 2013-09-17 | Applied Materials, Inc. | Processing multilayer semiconductors with multiple heat sources |
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| JP5024923B2 (ja) * | 2006-04-28 | 2012-09-12 | 株式会社リコー | 薄膜製造装置、薄膜製造方法および膜厚制御方法 |
| US20070256635A1 (en) * | 2006-05-02 | 2007-11-08 | Applied Materials, Inc. A Delaware Corporation | UV activation of NH3 for III-N deposition |
| US7560364B2 (en) * | 2006-05-05 | 2009-07-14 | Applied Materials, Inc. | Dislocation-specific lateral epitaxial overgrowth to reduce dislocation density of nitride films |
| US7459380B2 (en) * | 2006-05-05 | 2008-12-02 | Applied Materials, Inc. | Dislocation-specific dielectric mask deposition and lateral epitaxial overgrowth to reduce dislocation density of nitride films |
| US20080050889A1 (en) * | 2006-08-24 | 2008-02-28 | Applied Materials, Inc. | Hotwall reactor and method for reducing particle formation in GaN MOCVD |
-
2008
- 2008-01-31 US US12/023,520 patent/US20090194024A1/en not_active Abandoned
-
2009
- 2009-01-13 WO PCT/US2009/030858 patent/WO2009099720A1/en not_active Ceased
- 2009-01-13 KR KR1020107018869A patent/KR101296317B1/ko active Active
- 2009-01-13 CN CN200980103376.2A patent/CN101925980B/zh active Active
- 2009-01-13 JP JP2010545050A patent/JP2011511459A/ja active Pending
- 2009-01-22 TW TW098102538A patent/TWI513852B/zh active
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