CN101925980B - 化学汽相沉积设备 - Google Patents

化学汽相沉积设备 Download PDF

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Publication number
CN101925980B
CN101925980B CN200980103376.2A CN200980103376A CN101925980B CN 101925980 B CN101925980 B CN 101925980B CN 200980103376 A CN200980103376 A CN 200980103376A CN 101925980 B CN101925980 B CN 101925980B
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China
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radiation heating
substrates
heating zone
pedestal
zone
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English (en)
Chinese (zh)
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CN101925980A (zh
Inventor
布赖恩·H·伯罗斯
罗纳德·史蒂文斯
雅各布·格雷森
乔舒亚·J·波德斯塔
桑迪普·尼杰霍安
洛里·D·华盛顿
亚历山大·塔姆
萨姆埃德霍·阿卡赖亚
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Applied Materials Inc
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Applied Materials Inc
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/452—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by activating reactive gas streams before their introduction into the reaction chamber, e.g. by ionisation or addition of reactive species
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
    • C23C16/481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation by radiant heating of the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0602—Temperature monitoring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7618—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating carrousel
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7621—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting two or more semiconductor substrates

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
CN200980103376.2A 2008-01-31 2009-01-13 化学汽相沉积设备 Active CN101925980B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/023,520 US20090194024A1 (en) 2008-01-31 2008-01-31 Cvd apparatus
US12/023,520 2008-01-31
PCT/US2009/030858 WO2009099720A1 (en) 2008-01-31 2009-01-13 Cvd apparatus

Publications (2)

Publication Number Publication Date
CN101925980A CN101925980A (zh) 2010-12-22
CN101925980B true CN101925980B (zh) 2013-03-13

Family

ID=40930407

Family Applications (1)

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CN200980103376.2A Active CN101925980B (zh) 2008-01-31 2009-01-13 化学汽相沉积设备

Country Status (6)

Country Link
US (1) US20090194024A1 (enExample)
JP (1) JP2011511459A (enExample)
KR (1) KR101296317B1 (enExample)
CN (1) CN101925980B (enExample)
TW (1) TWI513852B (enExample)
WO (1) WO2009099720A1 (enExample)

Families Citing this family (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100206229A1 (en) * 2008-05-30 2010-08-19 Alta Devices, Inc. Vapor deposition reactor system
US20100139554A1 (en) * 2008-12-08 2010-06-10 Applied Materials, Inc. Methods and apparatus for making gallium nitride and gallium aluminum nitride thin films
JP2012521094A (ja) * 2009-03-16 2012-09-10 アルタ デバイセズ，インコーポレイテッド ウエハキャリアトラック
US8110889B2 (en) * 2009-04-28 2012-02-07 Applied Materials, Inc. MOCVD single chamber split process for LED manufacturing
US20110049779A1 (en) * 2009-08-28 2011-03-03 Applied Materials, Inc. Substrate carrier design for improved photoluminescence uniformity
US20110081771A1 (en) * 2009-10-07 2011-04-07 Applied Materials, Inc. Multichamber split processes for led manufacturing
CN104810257A (zh) * 2009-10-28 2015-07-29 丽佳达普株式会社 金属有机化学汽相淀积设备及其温度控制方法
EP2495755A4 (en) * 2009-10-28 2013-11-06 Lig Adp Co Ltd METALOORGANIC DEVICE FOR DEPOSITING CHEMICAL FUMES AND TEMPERATURE CONTROL METHOD THEREFOR
US20110256692A1 (en) * 2010-04-14 2011-10-20 Applied Materials, Inc. Multiple precursor concentric delivery showerhead
TW201204868A (en) * 2010-07-12 2012-02-01 Applied Materials Inc Compartmentalized chamber
KR101205433B1 (ko) * 2010-07-28 2012-11-28 국제엘렉트릭코리아 주식회사 기판 서셉터 및 그것을 갖는 증착 장치
WO2012071302A2 (en) * 2010-11-22 2012-05-31 Applied Materials, Inc. Interchangeable pumping rings to control path of process gas flow
US20120227665A1 (en) * 2011-03-11 2012-09-13 Applied Materials, Inc. Apparatus for monitoring and controlling substrate temperature
US8404048B2 (en) 2011-03-11 2013-03-26 Applied Materials, Inc. Off-angled heating of the underside of a substrate using a lamp assembly
EP2699710A1 (en) * 2011-04-20 2014-02-26 Koninklijke Philips N.V. Measurement device and method for vapour deposition applications
CN103088415B (zh) * 2011-11-03 2015-12-02 上海华虹宏力半导体制造有限公司 改善灯加热腔体内温度均匀性的方法
US20130239894A1 (en) * 2012-03-19 2013-09-19 Pinecone Material Inc. Chemical vapor deposition apparatus
CN102534567B (zh) * 2012-03-21 2014-01-15 中微半导体设备(上海)有限公司 控制化学气相沉积腔室内的基底加热的装置及方法
JP2013222884A (ja) 2012-04-18 2013-10-28 Furukawa Co Ltd 気相成長装置および成膜方法
US9401271B2 (en) 2012-04-19 2016-07-26 Sunedison Semiconductor Limited (Uen201334164H) Susceptor assemblies for supporting wafers in a reactor apparatus
US9373534B2 (en) 2012-09-05 2016-06-21 Industrial Technology Research Institute Rotary positioning apparatus with dome carrier, automatic pick-and-place system, and operating method thereof
US9082801B2 (en) * 2012-09-05 2015-07-14 Industrial Technology Research Institute Rotatable locating apparatus with dome carrier and operating method thereof
TW201437421A (zh) * 2013-02-20 2014-10-01 應用材料股份有限公司 用於旋轉料架原子層沉積之裝置以及方法
CN105027275B (zh) * 2013-03-15 2018-06-26 应用材料公司 具有用于外延处理的均匀性调整透镜的基座支撑杆
US9837250B2 (en) * 2013-08-30 2017-12-05 Applied Materials, Inc. Hot wall reactor with cooled vacuum containment
KR102434364B1 (ko) 2013-09-06 2022-08-19 어플라이드 머티어리얼스, 인코포레이티드 원형 램프 어레이들
US10047457B2 (en) * 2013-09-16 2018-08-14 Applied Materials, Inc. EPI pre-heat ring
JP6542245B2 (ja) 2014-02-14 2019-07-10 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 射出アセンブリ付きの上方ドーム
CN104911565B (zh) * 2014-03-11 2017-12-22 中微半导体设备(上海)有限公司 一种化学气相沉积装置
US20160033070A1 (en) * 2014-08-01 2016-02-04 Applied Materials, Inc. Recursive pumping member
KR101586937B1 (ko) * 2014-08-12 2016-01-19 주식회사 엘지실트론 에피 웨이퍼 성장장치
JP6210382B2 (ja) * 2014-09-05 2017-10-11 信越半導体株式会社 エピタキシャル成長装置
JP6840138B2 (ja) * 2015-10-09 2021-03-10 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 処理のためのウエハ加熱用ダイオードレーザー
US10727094B2 (en) * 2016-01-29 2020-07-28 Taiwan Semiconductor Manufacturing Co., Ltd Thermal reflector device for semiconductor fabrication tool
CN109154085B (zh) * 2016-03-22 2021-05-18 东京毅力科创株式会社 用于等离子体处理系统中的温度控制的系统和方法
TWI677593B (zh) * 2016-04-01 2019-11-21 美商應用材料股份有限公司 用於提供均勻流動的氣體的設備及方法
KR102915695B1 (ko) * 2018-10-01 2026-01-21 어플라이드 머티어리얼스, 인코포레이티드 에피택시 반응기의 석영 돔을 위한 퍼지식 뷰포트
WO2026057801A2 (de) * 2024-09-13 2026-03-19 Aixtron Se Cvd-reaktor

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001203195A (ja) * 1999-11-09 2001-07-27 Axcelis Technologies Inc プラズマ処理装置、温度制御装置及びその制御方法
CN1585832A (zh) * 2001-04-12 2005-02-23 马特森技术公司 用于在半导体衬底上外延淀积膜的系统和方法
US7128785B2 (en) * 2001-04-11 2006-10-31 Aixtron Ag Method for depositing especially crystalline layers from the gas phase onto especially crystalline substrates

Family Cites Families (43)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55500588A (enExample) * 1978-08-18 1980-09-04
JPH03129722A (ja) * 1989-06-30 1991-06-03 Showa Denko Kk 気相成長装置
US5286296A (en) * 1991-01-10 1994-02-15 Sony Corporation Multi-chamber wafer process equipment having plural, physically communicating transfer means
US5332442A (en) * 1991-11-15 1994-07-26 Tokyo Electron Kabushiki Kaisha Surface processing apparatus
JPH05306466A (ja) * 1992-04-30 1993-11-19 Matsushita Electric Ind Co Ltd プラズマｃｖｄ装置
US5525160A (en) * 1993-05-10 1996-06-11 Tokyo Electron Kabushiki Kaisha Film deposition processing device having transparent support and transfer pins
GB9411911D0 (en) * 1994-06-14 1994-08-03 Swan Thomas & Co Ltd Improvements in or relating to chemical vapour deposition
US5551985A (en) * 1995-08-18 1996-09-03 Torrex Equipment Corporation Method and apparatus for cold wall chemical vapor deposition
JPH09237763A (ja) * 1996-02-28 1997-09-09 Tokyo Electron Ltd 枚葉式の熱処理装置
JPH09312267A (ja) * 1996-05-23 1997-12-02 Rohm Co Ltd 半導体装置の製法およびその製造装置
US5951896A (en) * 1996-12-04 1999-09-14 Micro C Technologies, Inc. Rapid thermal processing heater technology and method of use
JPH1145859A (ja) * 1997-07-28 1999-02-16 Fujitsu Ltd エピタキシャル成長装置
US6064799A (en) * 1998-04-30 2000-05-16 Applied Materials, Inc. Method and apparatus for controlling the radial temperature gradient of a wafer while ramping the wafer temperature
US6289842B1 (en) * 1998-06-22 2001-09-18 Structured Materials Industries Inc. Plasma enhanced chemical vapor deposition system
KR100319494B1 (ko) * 1999-07-15 2002-01-09 김용일 원자층 에피택시 공정을 위한 반도체 박막 증착장치
US6489241B1 (en) * 1999-09-17 2002-12-03 Applied Materials, Inc. Apparatus and method for surface finishing a silicon film
GB0115831D0 (en) * 2001-06-28 2001-08-22 Ceramaspeed Ltd Radiant electric heater
JP3660897B2 (ja) * 2001-09-03 2005-06-15 株式会社ルネサステクノロジ 半導体装置の製造方法
JP4936621B2 (ja) * 2001-09-28 2012-05-23 アプライド マテリアルズ インコーポレイテッド 成膜装置のプロセスチャンバー、成膜装置および成膜方法
JP3982402B2 (ja) * 2002-02-28 2007-09-26 東京エレクトロン株式会社 処理装置及び処理方法
JP4544265B2 (ja) * 2002-02-28 2010-09-15 東京エレクトロン株式会社 シャワーヘッド構造及び成膜処理装置
US20040175893A1 (en) * 2003-03-07 2004-09-09 Applied Materials, Inc. Apparatuses and methods for forming a substantially facet-free epitaxial film
KR20040085267A (ko) * 2003-03-31 2004-10-08 삼성전자주식회사 원자막 증착 장치
JP3929939B2 (ja) * 2003-06-25 2007-06-13 株式会社東芝 処理装置、製造装置、処理方法及び電子装置の製造方法
US8536492B2 (en) * 2003-10-27 2013-09-17 Applied Materials, Inc. Processing multilayer semiconductors with multiple heat sources
US7368368B2 (en) * 2004-08-18 2008-05-06 Cree, Inc. Multi-chamber MOCVD growth apparatus for high performance/high throughput
US20060281310A1 (en) * 2005-06-08 2006-12-14 Applied Materials, Inc. Rotating substrate support and methods of use
US7601652B2 (en) * 2005-06-21 2009-10-13 Applied Materials, Inc. Method for treating substrates and films with photoexcitation
US20060286819A1 (en) * 2005-06-21 2006-12-21 Applied Materials, Inc. Method for silicon based dielectric deposition and clean with photoexcitation
US8372203B2 (en) * 2005-09-30 2013-02-12 Applied Materials, Inc. Apparatus temperature control and pattern compensation
US20070240631A1 (en) * 2006-04-14 2007-10-18 Applied Materials, Inc. Epitaxial growth of compound nitride semiconductor structures
US20070241351A1 (en) * 2006-04-14 2007-10-18 Applied Materials, Inc. Double-sided nitride structures
US7470599B2 (en) * 2006-04-14 2008-12-30 Applied Materials, Inc. Dual-side epitaxy processes for production of nitride semiconductor structures
US7575982B2 (en) * 2006-04-14 2009-08-18 Applied Materials, Inc. Stacked-substrate processes for production of nitride semiconductor structures
US20070254093A1 (en) * 2006-04-26 2007-11-01 Applied Materials, Inc. MOCVD reactor with concentration-monitor feedback
US20070254100A1 (en) * 2006-04-26 2007-11-01 Applied Materials, Inc. MOCVD reactor without metalorganic-source temperature control
US7364991B2 (en) * 2006-04-27 2008-04-29 Applied Materials, Inc. Buffer-layer treatment of MOCVD-grown nitride structures
US7399653B2 (en) * 2006-04-28 2008-07-15 Applied Materials, Inc. Nitride optoelectronic devices with backside deposition
JP5024923B2 (ja) * 2006-04-28 2012-09-12 株式会社リコー 薄膜製造装置、薄膜製造方法および膜厚制御方法
US20070256635A1 (en) * 2006-05-02 2007-11-08 Applied Materials, Inc. A Delaware Corporation UV activation of NH3 for III-N deposition
US7560364B2 (en) * 2006-05-05 2009-07-14 Applied Materials, Inc. Dislocation-specific lateral epitaxial overgrowth to reduce dislocation density of nitride films
US7459380B2 (en) * 2006-05-05 2008-12-02 Applied Materials, Inc. Dislocation-specific dielectric mask deposition and lateral epitaxial overgrowth to reduce dislocation density of nitride films
US20080050889A1 (en) * 2006-08-24 2008-02-28 Applied Materials, Inc. Hotwall reactor and method for reducing particle formation in GaN MOCVD

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001203195A (ja) * 1999-11-09 2001-07-27 Axcelis Technologies Inc プラズマ処理装置、温度制御装置及びその制御方法
US7128785B2 (en) * 2001-04-11 2006-10-31 Aixtron Ag Method for depositing especially crystalline layers from the gas phase onto especially crystalline substrates
CN1585832A (zh) * 2001-04-12 2005-02-23 马特森技术公司 用于在半导体衬底上外延淀积膜的系统和方法

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
JP特开2001-203195A 2001.07.27

Also Published As

Publication number Publication date
JP2011511459A (ja) 2011-04-07
KR101296317B1 (ko) 2013-08-14
KR20100124257A (ko) 2010-11-26
TW200946713A (en) 2009-11-16
CN101925980A (zh) 2010-12-22
TWI513852B (zh) 2015-12-21
WO2009099720A1 (en) 2009-08-13
US20090194024A1 (en) 2009-08-06

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