JP2011510493A - Ｌｅｄ、ｌｅｄを有するパッケージ構造体、およびｌｅｄを製作する方法 - Google Patents

Ｌｅｄ、ｌｅｄを有するパッケージ構造体、およびｌｅｄを製作する方法 Download PDF

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JP2011510493A
JP2011510493A JP2010542495A JP2010542495A JP2011510493A JP 2011510493 A JP2011510493 A JP 2011510493A JP 2010542495 A JP2010542495 A JP 2010542495A JP 2010542495 A JP2010542495 A JP 2010542495A JP 2011510493 A JP2011510493 A JP 2011510493A
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JP
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type semiconductor
semiconductor material
material layer
led
cathode
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JP2010542495A
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Japanese (ja)
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JP2011510493A5 (https=
Inventor
樊邦弘
翁新川
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鶴山麗得電子實業有限公司
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Publication of JP2011510493A publication Critical patent/JP2011510493A/ja
Publication of JP2011510493A5 publication Critical patent/JP2011510493A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8314—Electrodes characterised by their shape extending at least partially onto an outer side surface of the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/835—Reflective materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/536—Shapes of wire connectors the connected ends being ball-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/874—On different surfaces
    • H10W72/884—Die-attach connectors and bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink
JP2010542495A 2008-01-19 2008-05-26 Ｌｅｄ、ｌｅｄを有するパッケージ構造体、およびｌｅｄを製作する方法 Pending JP2011510493A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN200810025948.7A CN101222015B (zh) 2008-01-19 2008-01-19 发光二极管、具有其的封装结构及其制造方法
PCT/CN2008/001012 WO2009089671A1 (en) 2008-01-19 2008-05-26 Led package structure having the led and method for fabricating the led

Publications (2)

Publication Number Publication Date
JP2011510493A true JP2011510493A (ja) 2011-03-31
JP2011510493A5 JP2011510493A5 (https=) 2011-07-14

Family

ID=39631704

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010542495A Pending JP2011510493A (ja) 2008-01-19 2008-05-26 Ｌｅｄ、ｌｅｄを有するパッケージ構造体、およびｌｅｄを製作する方法

Country Status (5)

Country Link
US (1) US20090184337A1 (https=)
EP (1) EP2244309A4 (https=)
JP (1) JP2011510493A (https=)
CN (1) CN101222015B (https=)
WO (1) WO2009089671A1 (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20130137816A (ko) * 2012-06-08 2013-12-18 엘지이노텍 주식회사 발광소자, 발광소자 패키지 및 라이트 유닛
JP2019201198A (ja) * 2018-05-18 2019-11-21 オプト テック コーポレーション 発光チップ及び関連するパッケージ構造

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101007128B1 (ko) * 2009-02-19 2011-01-10 엘지이노텍 주식회사 발광소자 및 그 제조방법
CN101916818A (zh) * 2010-07-20 2010-12-15 武汉迪源光电科技有限公司 一种出光层折射率渐变的发光二极管
US9136432B2 (en) 2010-12-28 2015-09-15 Seoul Viosys Co., Ltd. High efficiency light emitting diode
CN104332547B (zh) * 2011-12-29 2016-04-06 义乌市运拓光电科技有限公司 一种led芯片
CN102544295B (zh) * 2012-02-01 2012-11-28 俞国宏 一种高光效白光led倒装芯片
CN103050610B (zh) * 2012-02-01 2014-10-22 俞国宏 一种高光效白光led倒装芯片
CN103050611B (zh) * 2012-02-01 2014-04-02 俞国宏 一种高光效白光led倒装芯片
CN103943769B (zh) * 2012-02-27 2016-04-06 义乌市运拓光电科技有限公司 一种使用陶瓷散热的高功率led灯具
US9306138B2 (en) * 2013-04-08 2016-04-05 Xiamen Sanan Optoelectronics Technology Co., Ltd. Light emitting diode packaging structure
FR3008547B1 (fr) * 2013-07-15 2016-12-09 Commissariat Energie Atomique Structure emissive a injection laterale de porteurs
CN105489733A (zh) * 2014-09-16 2016-04-13 比亚迪股份有限公司 Led芯片及其形成方法
US9985190B2 (en) * 2016-05-18 2018-05-29 eLux Inc. Formation and structure of post enhanced diodes for orientation control
CN104993024A (zh) * 2015-06-19 2015-10-21 圆融光电科技股份有限公司 发光二极管芯片及其制作方法和封装方法
FR3042913B1 (fr) * 2015-10-22 2019-07-12 Commissariat A L'energie Atomique Et Aux Energies Alternatives Diode micro-electronique a surface active optimisee
CN105517260A (zh) * 2016-02-03 2016-04-20 泰州优宾晶圆科技有限公司 一种灯泡电源一体化系统
CN108321276A (zh) * 2018-01-31 2018-07-24 湘能华磊光电股份有限公司 一种改善电极环粘附性的pv膜层及粘附性改善方法
KR102030323B1 (ko) * 2018-11-23 2019-10-10 엘지디스플레이 주식회사 표시 장치 및 표시 장치의 제조 방법
FR3090999B1 (fr) 2018-12-20 2022-01-14 Commissariat Energie Atomique Procédé de fabrication d'un composant semiconducteur à base d'un composé III-N
FR3091028B1 (fr) * 2018-12-20 2022-01-21 Commissariat Energie Atomique Dispositif optoélectronique à jonction PN
CN111463261A (zh) * 2020-03-26 2020-07-28 深圳第三代半导体研究院 氮化物肖特基二极管及其制造方法

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0927639A (ja) * 1995-07-12 1997-01-28 Toshiba Corp 半導体装置
JPH10163530A (ja) * 1996-11-27 1998-06-19 Nichia Chem Ind Ltd 窒化物半導体素子
JPH10308537A (ja) * 1997-05-08 1998-11-17 Rohm Co Ltd 半導体発光素子
JP2001085750A (ja) * 1999-09-16 2001-03-30 Nichia Chem Ind Ltd 窒化物半導体発光チップ
JP2001217456A (ja) * 2000-02-03 2001-08-10 Sharp Corp 窒化ガリウム系化合物半導体発光素子
JP2002094117A (ja) * 2000-09-06 2002-03-29 Renyu Kagi Kofun Yugenkoshi 発光ダイオード素子及びその製造方法
JP2002094116A (ja) * 2000-09-06 2002-03-29 Renyu Kagi Kofun Yugenkoshi 化合物半導体発光素子及びその製造方法
JP2002368275A (ja) * 2001-06-11 2002-12-20 Toyoda Gosei Co Ltd 半導体素子及びその製造方法
JP2003023180A (ja) * 2001-07-05 2003-01-24 Seiwa Electric Mfg Co Ltd 化合物半導体発光素子及びその製造方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW365071B (en) * 1996-09-09 1999-07-21 Toshiba Corp Semiconductor light emitting diode and method for manufacturing the same
US6255129B1 (en) * 2000-09-07 2001-07-03 Highlink Technology Corporation Light-emitting diode device and method of manufacturing the same
DE10044500A1 (de) * 2000-09-08 2002-04-04 Highlink Technology Corp Chupe Licht emittierendes Verbindungshalbleiter-Bauteil und Verfahren zur Herstellung desselben
CN1208846C (zh) * 2002-03-27 2005-06-29 联铨科技股份有限公司 Ⅲ族氮化物发光二极管及其制造方法
KR20050036813A (ko) * 2003-10-16 2005-04-20 닛토덴코 가부시키가이샤 광반도체 소자 봉지용 에폭시 수지 조성물 및 이를 사용한광반도체 장치
TW200520266A (en) * 2003-11-21 2005-06-16 Sanken Electric Co Ltd Semiconductor luminous element and manufacturing method of the same
CN100407457C (zh) * 2005-05-26 2008-07-30 大连路美芯片科技有限公司 氮化镓基高亮度高功率蓝绿发光二极管芯片
KR100795179B1 (ko) * 2006-05-30 2008-01-16 삼성전기주식회사 질화물계 반도체 발광소자

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0927639A (ja) * 1995-07-12 1997-01-28 Toshiba Corp 半導体装置
JPH10163530A (ja) * 1996-11-27 1998-06-19 Nichia Chem Ind Ltd 窒化物半導体素子
JPH10308537A (ja) * 1997-05-08 1998-11-17 Rohm Co Ltd 半導体発光素子
JP2001085750A (ja) * 1999-09-16 2001-03-30 Nichia Chem Ind Ltd 窒化物半導体発光チップ
JP2001217456A (ja) * 2000-02-03 2001-08-10 Sharp Corp 窒化ガリウム系化合物半導体発光素子
JP2002094117A (ja) * 2000-09-06 2002-03-29 Renyu Kagi Kofun Yugenkoshi 発光ダイオード素子及びその製造方法
JP2002094116A (ja) * 2000-09-06 2002-03-29 Renyu Kagi Kofun Yugenkoshi 化合物半導体発光素子及びその製造方法
JP2002368275A (ja) * 2001-06-11 2002-12-20 Toyoda Gosei Co Ltd 半導体素子及びその製造方法
JP2003023180A (ja) * 2001-07-05 2003-01-24 Seiwa Electric Mfg Co Ltd 化合物半導体発光素子及びその製造方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20130137816A (ko) * 2012-06-08 2013-12-18 엘지이노텍 주식회사 발광소자, 발광소자 패키지 및 라이트 유닛
KR101961307B1 (ko) 2012-06-08 2019-03-25 엘지이노텍 주식회사 발광소자, 발광소자 패키지 및 라이트 유닛
JP2019201198A (ja) * 2018-05-18 2019-11-21 オプト テック コーポレーション 発光チップ及び関連するパッケージ構造

Also Published As

Publication number Publication date
CN101222015A (zh) 2008-07-16
US20090184337A1 (en) 2009-07-23
CN101222015B (zh) 2010-05-12
WO2009089671A1 (en) 2009-07-23
EP2244309A4 (en) 2013-04-03
EP2244309A1 (en) 2010-10-27

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