CN100407457C - 氮化镓基高亮度高功率蓝绿发光二极管芯片 - Google Patents
氮化镓基高亮度高功率蓝绿发光二极管芯片 Download PDFInfo
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- CN100407457C CN100407457C CN2005100715927A CN200510071592A CN100407457C CN 100407457 C CN100407457 C CN 100407457C CN 2005100715927 A CN2005100715927 A CN 2005100715927A CN 200510071592 A CN200510071592 A CN 200510071592A CN 100407457 C CN100407457 C CN 100407457C
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- Prior art keywords
- electrode
- gallium nitride
- layer
- led chip
- green led
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- 229910002601 GaN Inorganic materials 0.000 title claims abstract description 67
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title claims abstract description 62
- 239000000758 substrate Substances 0.000 claims abstract description 12
- 229910052594 sapphire Inorganic materials 0.000 claims abstract description 6
- 239000010980 sapphire Substances 0.000 claims abstract description 6
- 238000002161 passivation Methods 0.000 claims description 10
- 238000000576 coating method Methods 0.000 claims description 6
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 5
- 229910052733 gallium Inorganic materials 0.000 claims description 5
- 238000007789 sealing Methods 0.000 claims description 5
- 239000011248 coating agent Substances 0.000 claims description 4
- IWBUYGUPYWKAMK-UHFFFAOYSA-N [AlH3].[N] Chemical compound [AlH3].[N] IWBUYGUPYWKAMK-UHFFFAOYSA-N 0.000 claims description 3
- 238000000034 method Methods 0.000 abstract description 11
- 238000001704 evaporation Methods 0.000 abstract description 7
- 238000001259 photo etching Methods 0.000 abstract description 4
- 229910002704 AlGaN Inorganic materials 0.000 abstract 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 6
- 230000008020 evaporation Effects 0.000 description 6
- 239000010931 gold Substances 0.000 description 6
- 239000010936 titanium Substances 0.000 description 6
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 5
- 229910052804 chromium Inorganic materials 0.000 description 5
- 239000011651 chromium Substances 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 235000012239 silicon dioxide Nutrition 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- 238000009826 distribution Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- YBXMTNGWQWZJHK-UHFFFAOYSA-N [Au].[Ni]=O Chemical compound [Au].[Ni]=O YBXMTNGWQWZJHK-UHFFFAOYSA-N 0.000 description 2
- HZEWFHLRYVTOIW-UHFFFAOYSA-N [Ti].[Ni] Chemical compound [Ti].[Ni] HZEWFHLRYVTOIW-UHFFFAOYSA-N 0.000 description 2
- -1 aluminium gold Chemical compound 0.000 description 2
- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- NXAHEPNDOUOACA-UHFFFAOYSA-N chromium gallium Chemical compound [Cr].[Ga] NXAHEPNDOUOACA-UHFFFAOYSA-N 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000004134 energy conservation Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
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Abstract
Description
Claims (7)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN2005100715927A CN100407457C (zh) | 2005-05-26 | 2005-05-26 | 氮化镓基高亮度高功率蓝绿发光二极管芯片 |
Applications Claiming Priority (1)
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CN2005100715927A CN100407457C (zh) | 2005-05-26 | 2005-05-26 | 氮化镓基高亮度高功率蓝绿发光二极管芯片 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1870307A CN1870307A (zh) | 2006-11-29 |
CN100407457C true CN100407457C (zh) | 2008-07-30 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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CN2005100715927A Expired - Fee Related CN100407457C (zh) | 2005-05-26 | 2005-05-26 | 氮化镓基高亮度高功率蓝绿发光二极管芯片 |
Country Status (1)
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CN (1) | CN100407457C (zh) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102569587B (zh) * | 2007-04-09 | 2015-09-16 | 晶元光电股份有限公司 | 具有叠合透明电极的半导体发光装置 |
CN101222015B (zh) * | 2008-01-19 | 2010-05-12 | 鹤山丽得电子实业有限公司 | 发光二极管、具有其的封装结构及其制造方法 |
CN101257075B (zh) * | 2008-03-13 | 2010-05-12 | 鹤山丽得电子实业有限公司 | 一种发光二极管器件及其制造方法 |
CN101800273B (zh) * | 2009-02-11 | 2011-06-01 | 立景光电股份有限公司 | 形成横向分布发光二极管的方法 |
CN101944558B (zh) * | 2009-07-09 | 2012-05-02 | 晶发光电股份有限公司 | 具有钝化层的发光二极管及其制造方法 |
JP5517882B2 (ja) * | 2010-10-20 | 2014-06-11 | シャープ株式会社 | 窒化物半導体発光素子 |
CN113097355B (zh) * | 2020-01-08 | 2022-08-30 | 安徽三安光电有限公司 | 发光二极管及其制作方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10209499A (ja) * | 1997-01-24 | 1998-08-07 | Rohm Co Ltd | 半導体発光素子 |
US20040232454A1 (en) * | 2000-03-31 | 2004-11-25 | Toyoda Gosei Co., Ltd. | Group III nitride compound semiconductor device |
CN1595668A (zh) * | 2003-09-10 | 2005-03-16 | 方大集团股份有限公司 | 蓝宝石衬底发光二极管芯片电极制作方法 |
-
2005
- 2005-05-26 CN CN2005100715927A patent/CN100407457C/zh not_active Expired - Fee Related
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10209499A (ja) * | 1997-01-24 | 1998-08-07 | Rohm Co Ltd | 半導体発光素子 |
US20040232454A1 (en) * | 2000-03-31 | 2004-11-25 | Toyoda Gosei Co., Ltd. | Group III nitride compound semiconductor device |
CN1595668A (zh) * | 2003-09-10 | 2005-03-16 | 方大集团股份有限公司 | 蓝宝石衬底发光二极管芯片电极制作方法 |
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Publication number | Publication date |
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CN1870307A (zh) | 2006-11-29 |
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