CN101582418B - 电注入调控三基色单芯片白光发光二极管 - Google Patents
电注入调控三基色单芯片白光发光二极管 Download PDFInfo
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- CN101582418B CN101582418B CN200810111710A CN200810111710A CN101582418B CN 101582418 B CN101582418 B CN 101582418B CN 200810111710 A CN200810111710 A CN 200810111710A CN 200810111710 A CN200810111710 A CN 200810111710A CN 101582418 B CN101582418 B CN 101582418B
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- 238000002347 injection Methods 0.000 title abstract description 4
- 239000007924 injection Substances 0.000 title abstract description 4
- 230000001105 regulatory effect Effects 0.000 title abstract description 4
- 239000000758 substrate Substances 0.000 claims abstract description 18
- 239000000463 material Substances 0.000 claims description 16
- 239000003086 colorant Substances 0.000 claims description 4
- 230000005611 electricity Effects 0.000 claims description 4
- 238000006243 chemical reaction Methods 0.000 abstract description 4
- 238000005286 illumination Methods 0.000 abstract description 2
- 238000004020 luminiscence type Methods 0.000 abstract description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract 1
- 230000001276 controlling effect Effects 0.000 abstract 1
- 238000000034 method Methods 0.000 description 10
- 229910052594 sapphire Inorganic materials 0.000 description 8
- 239000010980 sapphire Substances 0.000 description 8
- 239000011777 magnesium Substances 0.000 description 6
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 6
- 238000002156 mixing Methods 0.000 description 5
- 238000002360 preparation method Methods 0.000 description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 239000002019 doping agent Substances 0.000 description 3
- 229910052749 magnesium Inorganic materials 0.000 description 3
- 238000010792 warming Methods 0.000 description 3
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 2
- 229910000846 In alloy Inorganic materials 0.000 description 2
- 241001025261 Neoraja caerulea Species 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 230000004913 activation Effects 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 229910052801 chlorine Inorganic materials 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 2
- 238000009616 inductively coupled plasma Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 description 2
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
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CN200810111710A CN101582418B (zh) | 2008-05-16 | 2008-05-16 | 电注入调控三基色单芯片白光发光二极管 |
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CN200810111710A CN101582418B (zh) | 2008-05-16 | 2008-05-16 | 电注入调控三基色单芯片白光发光二极管 |
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CN101582418A CN101582418A (zh) | 2009-11-18 |
CN101582418B true CN101582418B (zh) | 2012-10-03 |
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CN200810111710A Expired - Fee Related CN101582418B (zh) | 2008-05-16 | 2008-05-16 | 电注入调控三基色单芯片白光发光二极管 |
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Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20110220945A1 (en) * | 2010-03-09 | 2011-09-15 | Dae Sung Kang | Light emitting device and light emitting device package having the same |
CN102130143B (zh) * | 2010-09-28 | 2012-11-28 | 映瑞光电科技(上海)有限公司 | 白色led芯片及其形成方法 |
CN102064169B (zh) * | 2010-11-25 | 2012-05-23 | 山东华光光电子有限公司 | 单芯片白光led及其制备方法 |
CN102543988B (zh) * | 2012-03-02 | 2014-06-25 | 大连理工大学 | 金属支撑垂直结构无荧光粉白光led的制备方法 |
CN104300058B (zh) * | 2014-10-14 | 2018-02-27 | 扬州乾照光电有限公司 | 一种含掺杂宽势垒结构的黄绿光led |
CN105810784A (zh) * | 2016-04-08 | 2016-07-27 | 王星河 | 一种白光发光二极管的制作工艺 |
CN106784215A (zh) * | 2017-02-06 | 2017-05-31 | 福建中晶科技有限公司 | 一种可发多种复合光及单色光led芯片的制备方法 |
CN110350057B (zh) * | 2019-06-26 | 2024-06-25 | 佛山市国星半导体技术有限公司 | 一种白光发光二极管外延结构及其制作方法 |
CN113179667B (zh) * | 2019-11-26 | 2022-04-29 | 重庆康佳光电技术研究院有限公司 | 复合式微型发光二极管、显示面板、及电子设备 |
CN111149223A (zh) * | 2019-12-31 | 2020-05-12 | 重庆康佳光电技术研究院有限公司 | 一种复合型双波长led芯片及其制作方法 |
CN111834390B (zh) * | 2020-06-12 | 2023-09-22 | 福州大学 | 一种全彩化三极发光管显示器件及制造方法 |
CN113903837A (zh) * | 2021-11-01 | 2022-01-07 | 东南大学 | 一种倒装结构的纯氮化镓基白光发光二极管 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101038947A (zh) * | 2006-03-17 | 2007-09-19 | 中国科学院物理研究所 | 不需荧光粉转换的白光GaN发光二极管外延材料及制法 |
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Patent Citations (1)
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CN101038947A (zh) * | 2006-03-17 | 2007-09-19 | 中国科学院物理研究所 | 不需荧光粉转换的白光GaN发光二极管外延材料及制法 |
Non-Patent Citations (1)
Title |
---|
陆敏.量子阱结构对GaN基紫光二极管性能的影响.《稀有金属》.2007,第31卷第33页右栏第1-24行,图1. * |
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