WO2009089671A1 - Led, structure de boîtier comportant la led et procédé de fabrication de la led - Google Patents

Led, structure de boîtier comportant la led et procédé de fabrication de la led Download PDF

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Publication number
WO2009089671A1
WO2009089671A1 PCT/CN2008/001012 CN2008001012W WO2009089671A1 WO 2009089671 A1 WO2009089671 A1 WO 2009089671A1 CN 2008001012 W CN2008001012 W CN 2008001012W WO 2009089671 A1 WO2009089671 A1 WO 2009089671A1
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Prior art keywords
type semiconductor
light emitting
emitting diode
layer
semiconductor material
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PCT/CN2008/001012
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English (en)
French (fr)
Inventor
Ben Fan
Joe Weng
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He Shan Lide Electronic Enterprise Company Ltd.
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Application filed by He Shan Lide Electronic Enterprise Company Ltd. filed Critical He Shan Lide Electronic Enterprise Company Ltd.
Priority to JP2010542495A priority Critical patent/JP2011510493A/ja
Priority to EP08757348A priority patent/EP2244309A4/en
Publication of WO2009089671A1 publication Critical patent/WO2009089671A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H01L33/385—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending at least partially onto a side surface of the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H01L33/405—Reflective materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Definitions

  • the present invention relates to a light emitting diode, a package structure having the same, and a method of fabricating the same, and more particularly to a light emitting diode using a ring cathode, a package structure having the light emitting diode, and a method of manufacturing the light emitting diode. Background technique
  • LEDs Light-emitting diodes
  • the illuminating mechanism is that when a forward current is injected at both ends of the PN junction, the injected unbalanced carriers (electron-hole pairs) are combined to emit light during the diffusion process, and the emission process mainly corresponds to the spontaneous emission process of the light.
  • the material for fabricating the semiconductor light-emitting diode is heavily doped, and the N region in the thermal equilibrium state has many electrons with high mobility, and the P region has more holes with lower mobility. Due to the limitation of the PN junction barrier layer, under normal conditions, the two cannot naturally recombine.
  • a conventional light emitting diode is fabricated by epitaxially growing a stacked structure including a layer of an n-type semiconductor material, a layer of a light-emitting layer, and a layer of a p-type semiconductor material on a substrate.
  • the light-emitting diodes use different materials and structures as the wavelength of the light emitted by the light-emitting diodes is different.
  • sapphire is usually used as the substrate, and gallium indium nitride epitaxial structure is used as the laminated structure.
  • the cathode and the anode of the light emitting diode are both disposed on the front side. Therefore, the electrode occupies a relatively large area in the light-emitting diode chip, and is liable to cause uneven distribution of the diffusion current in the light-emitting diode. And the brightness of the light emitting diode is lowered due to the absorption of the light emitted by the light emitting diode by the electrode.
  • Another aspect of the present invention is to provide a light emitting diode having increased brightness.
  • the present invention also provides a package structure having the above-described light emitting diode and a method of manufacturing the above light emitting diode.
  • a light emitting diode includes: a substrate; an n-type semiconductor material layer formed on a front surface of the substrate; a light emitting layer formed on the n-type semiconductor material layer; a p-type semiconductor material layer formed on the light emitting layer; formed on the p-type An anode on the layer of semiconductor material; and a cathode formed along the edge of the layer of n-type semiconductor material and in electrical contact with the layer of n-type semiconductor material.
  • the light emitting diode according to the present invention further comprises a protective layer formed on the p-type conductive material layer, The anode penetrates the protective layer in contact with the p-type semiconductor layer material layer.
  • the light emitting diode according to the present invention further comprises a transparent electrode layer formed to cover the P-type semiconductor material layer between the p-type semiconductor material layer and the anode, the protective layer covering the transparent electrode layer.
  • the thickness of the transparent electrode layer is one quarter of the wavelength of light emitted by the light emitting diode.
  • the material of the transparent electrode layer is, for example, selected from the group consisting of ITO, Ru0 2 , NiO 2 , ZnO, or a combination thereof.
  • the cathode is made of a reflective metal or metal oxide that does not absorb light.
  • the material of the cathode is, for example, selected from the group consisting of Cr, Al, Ag, Au, Ti, ITO, ZnO, RuO 2 or a combination thereof.
  • the cathode is formed on a peripheral portion of the n-type semiconductor material layer.
  • the peripheral portion of the n-type semiconductor material layer on which the cathode is formed may have a thickness smaller than other portions of the n-type semiconductor material layer, thereby increasing the thickness of the electrode.
  • a cathode may be formed on the substrate and contact the side of the n-type semiconductor layer.
  • the thickness of the cathode and the anode is preferably 2 ⁇ m or more.
  • the material of the substrate is, for example, selected from the group consisting of silicon, sapphire, SiC, ZnO, GaN.
  • an LED package structure including a light emitting diode.
  • the light emitting diode includes: a substrate; an n-type semiconductor material layer formed on a front surface of the substrate; a light emitting layer formed on the n-type semiconductor material layer; a p-type semiconductor material layer formed on the light emitting layer; formed on the p-type An anode on the layer of semiconductor material; and a cathode formed along the edge of the layer of n-type semiconductor material and in electrical contact with the layer of n-type semiconductor material.
  • the light emitting diode package structure further includes a bonding wire formed on the anode; and a back metal plating layer or a conductive paste formed on the back surface of the substrate, the back metal plating layer or the conductive paste contacting the n-type semiconductor layer and the cathode.
  • the bonding wire and the back metallization layer and the conductive paste are electrically connected to the conductive bracket, respectively, and the conductive bracket is used for connection with an external circuit.
  • the back metallization layer or the conductive paste is formed integrally with the cathode.
  • a method of fabricating a light emitting diode includes: preparing a substrate; sequentially growing an n-type semiconductor layer, a light-emitting layer and a p-type semiconductor layer on a front surface of the substrate; using an etching method, removing the peripheral portion of the stacked structure until Exposing a peripheral portion of the n-type semiconductor layer; forming a protective layer to cover the above-described stacked structure and exposing a peripheral portion of the n -type semiconductor material layer; forming a ring-shaped cathode on a peripheral portion of the n -type semiconductor material layer; and An anode penetrating the protective layer is formed on the type semiconductor layer.
  • the cathode of the light emitting diode is formed along the n-type semiconductor layer, the current is more uniformly distributed on the light emitting surface. Moreover, since the cathode is made of a reflective metal that does not absorb light, light absorption is reduced. Since the thickness of the cathode and anode of the light-emitting diode is increased, the current of the light-emitting diode can be increased to increase the brightness and make the current distribution more uniform.
  • FIG. 1 is a cross-sectional view of a light emitting diode according to an embodiment of the invention.
  • FIG. 2 is a cross-sectional view of a light emitting diode according to another embodiment of the present invention
  • 3 is a cross-sectional view of a light emitting diode according to still another embodiment of the present invention
  • 4A to 4E are cross-sectional schematic views showing the steps of a method of manufacturing a light emitting diode according to an embodiment of the present invention.
  • FIG. 5 is a schematic diagram of a package structure of a light emitting diode according to an embodiment of the invention.
  • FIG. 6 is a schematic diagram of a package structure of a light emitting diode according to an embodiment of the invention.
  • FIG. 7 is a schematic diagram of a package structure of a light emitting diode according to an embodiment of the present invention.
  • Figure 8 is a front elevational view of a light emitting diode in accordance with the present invention. detailed description
  • a light emitting diode includes a substrate 8, an n-type semiconductor material layer 7 formed on the substrate 8, and a light-emitting layer 6 formed on the n-type semiconductor material layer 7. And a p-type semiconductor material layer 5 formed on the light-emitting layer 6.
  • the laminated structure composed of the p-type semiconductor material layer 5, the light-emitting layer 6, and the n-type semiconductor layer 7 may be formed of a semiconductor material such as a gallium nitride material.
  • the light emitting diode may further include a transparent electrode layer 3 formed on the P-type semiconductor material layer 5 covering the p-type semiconductor material layer 5.
  • the transparent electrode layer 3 is preferably made of a metal oxide selected from the group consisting of ITO, Ru02, Ni02, ZnO, or a combination thereof.
  • the thickness of the transparent electrode layer 3 is preferably one quarter of the wavelength of light emitted from the light emitting diode.
  • the anode 1 is formed on a central portion of the transparent electrode layer 3, for example, in a columnar shape. It is to be noted that the transparent electrode layer 3 can increase the uniformity of the current distribution of the light emitting diode, but the transparent electrode layer 3 is not necessary for the light emitting diode.
  • the anode 1 can also be formed directly on the p-type semiconductor layer 5.
  • Cathode 4 is formed along the edge of the n-type semiconductor material layer and in electrical contact with the n-type semiconductor material layer.
  • the cathode 4 may be formed on a peripheral portion of the n-type semiconductor layer 7, as shown in FIG.
  • the end face shape of the cathode 4 of the present invention is as shown in Fig. 8, which may be a ring, an elliptical ring, a polygonal ring or a closed ring formed by a combination of a straight line and a curved line; any cross-sectional shape of the cathode 4 is identical to the shape of the end face thereof.
  • the thickness of the peripheral portion of the n -type semiconductor layer 7 may be smaller than the thickness of the other portions, thereby forming a stepped shape.
  • the cathode 4 is formed on the lower n-type semiconductor layer 7, thereby increasing the thickness of the cathode 4, as shown in FIG.
  • the cathode 4 may be formed on the substrate 8 to contact the side of the n-type semiconductor layer 7, as shown in FIG.
  • the cathode 4 is preferably made of a reflective metal or metal oxide that does not absorb light to reduce the light absorption of the cathode.
  • the material of the cathode 4 is selected from the group consisting of Cr, Al, Ag, Au, Ti, ITO, ZnO, RuO 2, and combinations thereof.
  • the thickness of the cathode 4 and the anode 1 is preferably 2 ⁇ m or more.
  • An ohmic contact layer is formed between the n-type semiconductor layer 7 and the cathode 4 and between the p-type semiconductor layer 5 and the anode 1.
  • the protective layer 2 covers the transparent electrode layer 3 and separates the cathode 4 from the transparent electrode layer 3 to prevent the cathode 4 from coming into contact with the transparent electrode layer 3 to cause leakage failure.
  • the protective layer 2 is formed of an insulating material such as SiO 2 , Si 3 N 4 , SiNO, Ti 2 , SOG, or the like. Since the cathode 4 of the light emitting diode has a ring structure, current is more uniformly distributed on the light emitting surface. Further, by etching the side portions of the laminated structure, the cathode 4 is formed on the n-type semiconductor layer 7 having a reduced thickness, which increases the thickness of the electrode, thereby increasing the current and improving the uniformity of the current distribution. Moreover, the cathode 4 is made of a reflective material that does not absorb light, which reduces light absorption and increases the luminance of the light.
  • the substrate 8 is prepared.
  • the material of the substrate is selected from the group consisting of silicon, sapphire, SiC, ZnO, GaN, etc., and has a thickness of not more than 100 ⁇ m and not less than 5 ⁇ m.
  • a laminated structure of the n-type semiconductor layer 7, the light-emitting layer 6 and the p-type semiconductor layer 5 is sequentially grown on the front surface of the substrate 8, as shown in Fig. 4A.
  • the laminate structure can be formed by a semiconductor material such as a gallium nitride material by an epitaxial growth method.
  • the peripheral portion of the above laminated structure is removed using an etching method until the peripheral portion of the n-type semiconductor layer 7 is exposed.
  • the n-type semiconductor layer 7 may be further etched so that the thickness of the peripheral portion of the n-type semiconductor material layer 7 is smaller than the thickness of the central portion, for example, formed into a step shape as shown in Fig. 4B2.
  • a transparent electrode layer 3 is formed on the p-type semiconductor material layer 5 by, for example, a mask and a plating method, as shown in Fig. 4C.
  • the protective layer 2 is formed to cover the transparent electrode layer 3 and the above-described laminated structure, and only the peripheral portion of the n-type semiconductor layer 7 is exposed as shown in Fig. 4D. Then, a cathode 4 is formed around the n-type semiconductor material layer by a plating method, and an anode 1 penetrating the protective layer 2 and contacting it is formed on the central portion of the transparent electrode 3 as shown in Fig. 4E.
  • the anode 1 and the cathode 4 may be formed simultaneously or sequentially. Further, as described above, the transparent electrode layer 3 may be omitted.
  • the thickness of the cathode 4 and the anode 1 is preferably 2 ⁇ m or more.
  • the n-type semiconductor layer 7 and the cathode 4 are contacted by the back metal plating or the solid-crystal conductive paste 9, and the bonding wire 10 is formed on the anode 1.
  • the back metallization or solid crystal conductive paste 9 can be integrally formed with the cathode 4, thereby further simplifying the process steps.
  • the bonding wire 10 and the back metallized or solid crystal conductive paste 9 are electrically connected to the wire holder 12, respectively, and epoxy resin is poured into the cap 11 to form an LED package structure, as shown in FIG.
  • the cathode of the light-emitting diode of the present invention is formed around the n-type semiconductor layer, current is more uniformly distributed on the light-emitting surface. Moreover, since the cathode is made of a reflective metal that does not absorb light, light absorption is reduced. In addition, since the thickness of the cathode and anode of the light-emitting diode is increased, the current of the light-emitting diode can be increased to increase the brightness and make the current distribution more uniform.
  • the luminous efficiency of the diode of the present invention is increased by more than 50% compared to a conventional light emitting diode of the same size.
  • the invention can be applied to high brightness light emitting diodes.

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)

Description

发光二极管、 具有其的封装结构及其制造方法 技术领域
本发明涉及一种发光二极管、 具有该发光二极管的封装结构及该发光二极管的制造 方法， 尤其涉及一种采用环形阴极的发光二极管， 具有该发光二极管的封装结构及该发 光二极管的制造方法。 背景技术
发光二极管（LED)是用半导体材料制作的正向偏置的 PN结二极管。其发光机理是 当在 PN 结两端注入正向电流时， 注入的非平衡载流子 （电子一空穴对） 在扩散过程中 复合发光， 这种发射过程主要对应光的自发发射过程。 制作半导体发光二极管的材料是 重掺杂的， 热平衡状态下的 N区有很多迁移率很高的电子， P区有较多的迁移率较低的 空穴。 由于 PN结阻挡层的限制， 在常态下， 二者不能发生自然复合。 而当给 PN结加以 正向电压时， 沟道区导带中的电子则可逃过 PN结的势垒进入到 P区一侧。于是在 PN结 附近稍偏于 P区一边的地方， 处于高能态的电子与空穴相遇时， 便产生发光复合。 这种 发光复合所发出的光属于自发辐射。
一般而言， 传统的发光二极管 （LED) 的制造方法是在衬底上外延生长包括 n型半 导体材料层、 发光层和 p型半导体材料层的层叠结构。 随着发光二极管发射的光的波长' 不同， 发光二极管所采用的材料和结构也不同。 例如， 对于发射蓝光和绿光二极管， 通 常采用蓝宝石作为衬底， 而采用氮化镓铟外延结构作为层叠结构。 由于蓝宝石衬底为绝 缘衬底， 所以发光二极管的阴极和阳极均设置在正面。 因此电极占据了发光二极管芯片 中相当大的面积， 容易引起发光二极管中扩散电流的分布不均匀。 并且由于电极的对于 发光二极管发射的光的吸收作用而导致发光二极管的亮度降低。 发明内容
因此， 本发明的一个方面是提供一种改善发光二极管的扩散电流的发光二极管。 本发明的另一方面是提供一种具有增加的亮度的发光二极管。
本发明还提供了具有上述发光二极管的封装结构和上述发光二极管的制造方法。 根据本发明的一方面， 提供了一种发光二极管。 该发光二极管包括： 衬底； 形成于 衬底的正面上的 n型半导体材料层； 形成于 n型半导体材料层上的发光层； 形成于发光 层上的 p型半导体材料层； 形成于 p型半导体材料层上的阳极； 以及沿 n型半导体材料 层边缘形成并与 n型半导体材料层电接触的阴极。
优选地， 根据本发明的发光二极管还包括形成于 p型^^导体材料层上的保护层， 所 确 i 本 述阳极穿透所述保护层与 p型半导体层材料层接触。
优选地，根据本发明的发光二极管还包括形成于 p型半导体材料层和阳极之间覆盖 P 型半导体材料层的透明电极层， 保护层覆盖透明电极层。
优选地， 透明电极层的厚度为发光二极管发射的光的波长的四分之一。 透明电极层 的材料例如选自 ITO、 Ru02、 Ni02、 ZnO或其组合。
优选地， 阴极由不吸收光的反射性金属或金属氧化物制成。阴极的材料例如选自 Cr、 Al、 Ag、 Au、 Ti、 ITO、 ZnO、 Ru02或其组合。
优选地， 阴极形成于 n型半导体材料层的周边部分上。 阴极形成于其上的 n型半导 体材料层的周边部分的可以厚度小于 n型半导体材料层的其他部分， 从而增加电极的厚 度。 或者， 阴极可以形成于衬底上且接触 n型半导体层的侧面。 阴极和阳极的厚度优选 为 2微米以上。
衬底的材料例如选自硅、 蓝宝石、 SiC、 ZnO、 GaN。
根据本发明的另一方面， 提供了一种包括发光二极管的发光二极管封装结构。 该发 光二极管包括： 衬底； 形成于衬底的正面上的 n型半导体材料层； 形成于 n型半导体材 料层上的发光层； 形成于发光层上的 p型半导体材料层； 形成于 p型半导体材料层上的 阳极； 以及沿 n型半导体材料层边缘形成并与 n型半导体材料层电接触的阴极。 该发光 二极管封装结构还包括形成于阳极上的焊线； 以及形成于衬底的背面上的背镀金属层或 导电胶， 所述背镀金属层或导电胶接触 n型半导体层和阴极。 焊线和背镀金属层和导电 胶分别电连接至导电支架， 导电支架用于与外部电路连接。
优选地， 背镀金属层或导电胶与阴极形成为一体。
根据本发明的又一方面， 提供了一种发光二极管的制造方法。 所述方法包括： 制备 衬底； 在衬底的正面上依次生长 n型半导体层， 发光层和 p型半导体层的叠层结构； 使 用刻蚀方法， 移除上述叠层结构的周边部分， 直至暴露 n型半导体层的周边部分； 形成 保护层以覆盖上述的叠层结构并暴露 n型半导体材料层的周边部分； 在 n型半导体材料 层的周边部分上形成呈环状的阴极； 和在 p型半导体层上形成穿透保护层的阳极。
根据本发明， 由于发光二极管的阴极围沿 n型半导体层形成， 因此使得电流更均匀 地分布在发光表面。 而且由于阴极由不吸收光的反射性金属制成， 减小了光吸收。 因为 发光二极管阴极和阳极的厚度增加， 可以增加发光二极管的电流以增加亮度并使得电流 的分布更加均匀。 附图说明
图 1为根据本发明的一实施例的发光二极管的剖面示意图；
图 2为根据本发明的另一实施例的发光二极管的剖面示意图; 图 3为根据本发明的又一实施例的发光二极管的剖面示意图；
图 4A至 4E为显示根据本发明的实施例的发光二极管的制造方法的步骤的剖面示意 图；
图 5为根据本发明的一实施例的发光二极管的封装结构的示意图；
图 6为根据本发明的一实施例的发光二极管的封装结构的示意图；
图 7为根据本发明的一实施例的发光二极管的封装结构的示意图； 以及
图 8为根据本发明发光二极管的正面示意图。 具体实施方式
以下结合附图和实施例对本发明作进一步的说明。
如图 1 和 2所示， 根据本发明的一实施例的发光二极管包括衬底 8、 形成于衬底 8 上的 n型半导体材料层 7、 形成于 n型半导体材料层 7上的发光层 6和形成于发光层 6 上的 p型半导体材料层 5。 由 p型半导体材料层 5、 发光层 6和 n型半导体层 7构成的叠 层结构可以由例如氮化镓材料的半导体材料形成。 该发光二极管还可以包括形成于 P型 半导体材料层 5上覆盖 p型半导体材料层 5的透明电极层 3。 透明电极层 3优选由选自 ITO、 Ru02、 Ni02、 ZnO或其组合的金属氧化物制成。 透明电极层 3的厚度优选为发光 二极管发射的光的波长的四分之一。 阳极 1形成于透明电极层 3的中心部分上， 例如呈 柱状。 值得注意的是， 透明电极层 3可以增加发光二极管的电流分布的均匀性， 然而对 于发光二极管而言透明电极层 3并不是必须的。阳极 1也可以直接形成于 p型半导体层 5 上。
阴极 4沿 n型半导体材料层边缘形成并与 n型半导体材料层电接触。 阴极 4可以形 成于 n型半导体层 7的周边部分上， 如图 1所示。本发明阴极 4的端面形状如图 8所示， 其可为圆环、 椭圆环、 多边形环或由直线和曲线组合成的封闭形环状;阴极 4的任意横截 面形状与其端面形状一致。 n型半导体层 7的周边部分的厚度可以小于其他部分的厚度， 从而形成台阶状。 而阴极 4则形成于较低的 n型半导体层 7上， 从而增加阴极 4的厚度， 如图 2所示。 或者， 阴极 4可以形成于衬底 8上而接触 n型半导体层 7的侧面， 如图 3 所示。 阴极 4优选由不吸收光的反射性金属或金属氧化物制成以减小阴极的光吸收。 例 如， 阴极 4的材料选自 Cr、 Al、 Ag、 Au、 Ti、 ITO、 ZnO、 Ru02及其组合。 阴极 4和阳 极 1的厚度优选为 2微米以上。 在 n型半导体层 7和阴极 4之间以及在 p型半导体层 5 和阳极 1之间形成有欧姆接触层。
保护层 2覆盖透明电极层 3并将阴极 4与透明电极层 3隔开， 以防止阴极 4与透明 电极层 3接触而导致漏电失效。 保护层 2由绝缘材料形成， 例如 Si02、 Si3N4、 SiNO、 Ti02、 SOG等。 由于发光二极管的阴极 4为环状结构， 使得电流更均匀地分布在发光表面。 而且通 过蚀刻层叠结构的 边部分而使得阴极 4形成于厚度减小的 n型半导体层 7上， 增加了 电极的厚度， 从而增加了电流并改善了电流分布的均匀性。 而且阴极 4 由不吸收光的反 射性材料制成， 减小了光吸收和使得发光亮度增加。
现将参考图 4A至 4E描述根据本发明的一实施例的发光二极管的制造方法。 首先， 制备衬底 8。 衬底的材料选自硅、 蓝宝石、 SiC、 ZnO、 GaN等， 其厚度不大于 100微米 并不小于 5微米。然后在衬底 8的正面上依次生长 n型半导体层 7，发光层 6和 p型半导 体层 5的叠层结构，如图 4A所示。该叠层结构可以由例如氮化镓材料的半导体材料通过 外延生长方法形成。 接着， 如图 4B1所示， 使用刻蚀方法， 移除上述叠层结构的周边部 分， 直至 n型半导体层 7的周边部分被暴露。 n型半导体层 7可以被进一步蚀刻使得 n 型半导体材料层 7的周边部分的厚度小于中心部分的厚度， 例如形成台阶状， 如图 4B2 所示。然后例如利用掩模和镀膜的方法在 p型半导体材料层 5上形成透明电极层 3，如图 4C所示。 形成保护层 2以覆盖透明电极层 3和上述的层叠结构， 仅暴露 n性半导体层 7 的周边部分， 如图 4D所示。 然后利用镀覆方法， 在 n型半导体材料层的周围形成阴极 4 并在透明电极 3的中心部分上形成穿透保护层 2并与之接触的阳极 1， 如图 4E所示。 阳 极 1和阴极 4可以同时或先后形成。 而且如上所述， 也可以省略透明电极层 3。 阴极 4 和阳极 1的厚度优选为 2微米以上。
将上述形成的发光二极管的衬底 8减薄后， 进行切割捡晶后， 利用背镀金属或固晶 导电胶 9接触 n型半导体层 7和阴极 4， 并在阳极 1上形成焊线 10， 从而形成如图 4所 示的封装结构。 优选地， 可以将背镀金属或固晶导电胶 9与阴极 4一体形成， 从而进一 步简化工艺步骤。然后，将焊线 10和背镀金属或固晶导电胶 9分别电连接至导线支架 12， 并在套帽 11中灌入环氧树脂， 从而形成发光二极管封装结构， 如图 5所示。
由于本发明的发光二极管的阴极围绕 n型半导体层形成， 因此使得电流更均匀地分 布在发光表面。 而且由于阴极由不吸收光的反射性金属制成， 减小了光吸收。 另外， 因 为发光二极管阴极和阳极的厚度增加， 可以增加发光二极管的电流以增加亮度并使得电 流的分布更加均勾。 与传统相同尺寸的发光二极管相比， 本发明的二极管的发光效率增 加了 50%以上。
本发明可以应用于高亮度发光二极管。

Claims

权利 要 求
1、 一种发光二极管， 包括：
衬底；
形成于衬底的正面上的 n型半导体材料层；
形成于 n型半导体材料层上的发光层；
形成于发光层上的 p型半导体材料层；
形成于 p型半导体材料层上的阳极； 以及
沿 n型半导体材料层边缘形成并与 n型半导体材料层电接触的阴极。
2、根据权利要求 1所述的发光二极管，还包括形成于 p型半导体材料层上的保护层， 所述阳极穿透所述保护层与 p型半导体层材料层接触。
3、 根据权利要求 1所述的发光二极管， 还包括形成于 p型半导体材料层和阳极之间 覆盖 P型半导体材料层的透明电极层， 保护层覆盖透明电极层。
4、 根据权利要求 3所述的发光二极管， 其中透明电极层的厚度为发光二极管发射的 光的波长的四分之一。
5、根据权利要求 3或 4所述的发光二极管，其中透明电极层的材料选自 ITO、Ru02、 Ni02、 ZnO或其组合。
6、 根据权利要求 1所述的发光二极管， 其中阴极横截面的形状为圆环、 椭圆环、 多 边形环或由直线和曲线组合成的封闭形环。
7、 根据权利要求 1所述的发光二极管， 其中阴极由不吸收光的反射性金属或金属氧 化物制成。
8、 根据权利要求 1、 2、 3、 4、 6或 7所述的发光二极管， 其中阴极的材料选自 Cr、 Al、 Ag、 Au、 Ti、 ITO、 ZnO、 Ru02或其组合。
9、 根据权利要求 1所述的发光二极管， 其中阴极形成于 n型半导体材料层的周边部 分上。
10、 根据权利要求 9所述的发光二极管， 其中阴极形成于其上的 n型半导体材料层 的周边部分的厚度小于 n型半导体材料层的其他部分的厚度。
11、 根据权利要求 1所述的发光二极管， 其中阴极形成于衬底上且接触 n型半导体 层的侧面。
12、 根据权利要求 1、 2、 3、 9、 10或 11所述的发光二极管， 其中阴极和阳极的厚 度为 2微米以上。
13、 根据权利要求 1、 2、 3、 9、 10或 11所述的发光二极管， 其中在 n型半导体层 和阴极之间以及在 p型半导体层和阳极之间形成有欧姆接触层。
14、根据权利要求 1所述的发光二极管，其中衬底的材料选自硅、蓝宝石、 SiC、 ZnO、
15、 根据权利要求 1所述的发光二极管， 其中该发光二极管为高亮度发光二极管。
16、 一种发光二极管封装结构， 包括- 发光二极管， 包括：
衬底；
形成于衬底的正面上的 n型半导体材料层；
形成于 n型半导体材料层上的发光层；
形成于发光层上的 p型半导体材料层；
形成于 p型半导体材料层上的阳极； 以及
沿 n型半导体材料层边缘形成并与 n型半导体材料层电接触的阴极； 形成于阳极上的悍线； 以及
形成于衬底的背面上的背镀金属层或导电胶， 所述背镀金属层或导电胶接触 n型半 导体层和阴极，
其中焊线和背镀金属层和导电胶分别电连接至导电支架， 导电支架用于与外部电路 连接。
17、 根据权利要求 16所述的发光二极管封装结构， 还包括形成于 p型半导体材料层 上的保护层， 所述阳极穿透所述保护层与 p型半导体层材料层接触。
18、根据权利要求 16所述的发光二极管封装结构， 还包括形成于 p型半导体材料层 和阳极之间的覆盖 p型半导体材料层的透明电极层， 保护层覆盖透明电极层。
19、 根据权利要求 16所述的发光二极管封装结构， 其中透明电极层的厚度为发光二 极管发射的光的波长的四分之一。
20、 根据权利要求 18或 19所述的发光二极管封装结构， 其中透明电极层的材料选 自 ITO、 Ru02、 Ni02、 ZnO或其组合。
21、 根据权利要求 16所述的发光二极管封装结构， 其中阴极横截面的形状为圆环、 椭圆环， 多边形环或由直线和曲线组合成的封闭形环状。
22、 根据权利要求 16所述的发光二极管封装结构， 其中阴极由不吸收光的反射性金 属或金属氧化物制成。
23、 根据权利要求 16、 17、 18、 21或 22所述的发光二极管封装结构， 其中阴极的 材料选自 Cr、 Al、 Ag、 Au、 Ti、 ITO、 ZnO、 Ru02及其组合。
24、 根据权利要求 16所述的发光二极管封装结构， 其中阴极形成于 n型半导体材料 层的周边部分上。
25、 根据权利要求 24所述的发光二极管封装结构， 其中阴极形成于其上的 n型半导 体材料层的周边部分的厚度小于 n型半导体材料层的其他部分的厚度。
26、 根据权利要求 16所述的发光二极管封装结构， 其中阴极形成于衬底上且接触 n 型半导体层的侧面。
27、 根据权利要求 26所述的发光二极管封装结构， 其中背镀金属层或导电胶与阴极 形成为一体。
28、 根据权利要求 16、 17、 18、 24、 25或 26所述的发光二极管封装结构， 其中阴 极和阳极的厚度为 2微米以上。
29、 根据权利要求 16、 17、 18、 24、 25或 26所述的发光二极管封装结构， 其中在 η 型半导体层和阴极之间以及在 ρ型半导体层和阳极之间形成有欧姆接触层。
30、根据权利要求 16所述的发光二极管封装结构，其中衬底的材料选自硅、蓝宝石、 SiC、 ZnO、 GaN。
31、 根据权利要求 16所述的发光二极管封装结构， 其中该发光二极管为高亮度发光 二极管。
32、 一种发光二极管的制造方法， 包括：
制备衬底；
在衬底的正面上依次生长 n型半导体层， 发光层和 p型半导体层的叠层结构； 使用刻蚀方法， 移除上述叠层结构的周边部分， 直至暴露 n型半导体层的周边部分； 在 n型半导体材料层的周边部分上形成阴极； 和
在 p型半导体层上形成阳极。
33、根据权利要求 32所述的发光二极管的制造方法，还包括在形成阴极和阳极之前， 形成保护层以覆盖叠层结构并暴露 n型半导体材料层的周边部分。
34、 根据权利要求 32所述的发光二极管的制造方法， 还包括在 p型半导体材料层和 阳极之间形成覆盖 p型半导体材料层的透明电极层。
35、 根据权利要求 32所述的发光二极管的制造方法， 其中 n型半导体材料层的周边 部分的厚度小于其他部分的厚度。
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TWI661584B (zh) * 2018-05-18 2019-06-01 光磊科技股份有限公司 發光晶粒、封裝結構及其相關製造方法
KR102030323B1 (ko) 2018-11-23 2019-10-10 엘지디스플레이 주식회사 표시 장치 및 표시 장치의 제조 방법
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US20090184337A1 (en) 2009-07-23

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