JP2011503882A5 - - Google Patents

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Publication number
JP2011503882A5
JP2011503882A5 JP2010533345A JP2010533345A JP2011503882A5 JP 2011503882 A5 JP2011503882 A5 JP 2011503882A5 JP 2010533345 A JP2010533345 A JP 2010533345A JP 2010533345 A JP2010533345 A JP 2010533345A JP 2011503882 A5 JP2011503882 A5 JP 2011503882A5
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JP
Japan
Prior art keywords
layer
particles
substrate
energy
crystals
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JP2010533345A
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English (en)
Japanese (ja)
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JP2011503882A (ja
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Priority claimed from US12/269,344 external-priority patent/US8003498B2/en
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Publication of JP2011503882A publication Critical patent/JP2011503882A/ja
Publication of JP2011503882A5 publication Critical patent/JP2011503882A5/ja
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JP2010533345A 2007-11-13 2008-11-13 薄膜材料の粒子線アシスト修飾 Withdrawn JP2011503882A (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US98762907P 2007-11-13 2007-11-13
US98765007P 2007-11-13 2007-11-13
US98766707P 2007-11-13 2007-11-13
US12/269,344 US8003498B2 (en) 2007-11-13 2008-11-12 Particle beam assisted modification of thin film materials
PCT/US2008/083388 WO2009064872A2 (en) 2007-11-13 2008-11-13 Particle beam assisted modifcation of thin film materials

Publications (2)

Publication Number Publication Date
JP2011503882A JP2011503882A (ja) 2011-01-27
JP2011503882A5 true JP2011503882A5 (https=) 2012-01-05

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ID=40624096

Family Applications (3)

Application Number Title Priority Date Filing Date
JP2010533345A Withdrawn JP2011503882A (ja) 2007-11-13 2008-11-13 薄膜材料の粒子線アシスト修飾
JP2010533344A Pending JP2011505685A (ja) 2007-11-13 2008-11-13 粒子ビーム補助による薄膜材料の改良
JP2010533346A Withdrawn JP2011503883A (ja) 2007-11-13 2008-11-13 粒子ビーム補助による薄膜材料の改良

Family Applications After (2)

Application Number Title Priority Date Filing Date
JP2010533344A Pending JP2011505685A (ja) 2007-11-13 2008-11-13 粒子ビーム補助による薄膜材料の改良
JP2010533346A Withdrawn JP2011503883A (ja) 2007-11-13 2008-11-13 粒子ビーム補助による薄膜材料の改良

Country Status (6)

Country Link
US (3) US20090124065A1 (https=)
JP (3) JP2011503882A (https=)
KR (3) KR20100086042A (https=)
CN (3) CN101911250A (https=)
TW (3) TW200941550A (https=)
WO (3) WO2009064867A2 (https=)

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DE112012002072B4 (de) * 2011-05-13 2023-11-16 Sumco Corp. Verfahren zur Herstellung eines epitaktischen Siliciumwafers, epitaktischer Siliciumwafer und Verfahren zur Herstellung einer Festkörperbildaufnahmevorrichtung
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US8652974B2 (en) * 2011-06-22 2014-02-18 Ipg Photonics Corporation Method and system for pre-heating of semiconductor material for laser annealing and gas immersion laser doping
TWI506719B (zh) 2011-11-08 2015-11-01 因特瓦克公司 基板處理系統及方法
US9318332B2 (en) 2012-12-19 2016-04-19 Intevac, Inc. Grid for plasma ion implant
CN106898540B (zh) * 2015-12-17 2020-01-31 宸鸿光电科技股份有限公司 半导体制造方法
DE102017119571B4 (de) 2017-08-25 2024-03-14 Infineon Technologies Ag Ionenimplantationsverfahren und ionenimplantationsvorrichtung
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CN111668353B (zh) * 2020-06-19 2021-12-17 錼创显示科技股份有限公司 发光半导体结构及半导体基板
TWI728846B (zh) 2020-06-19 2021-05-21 錼創顯示科技股份有限公司 發光半導體結構及發光半導體基板
US20230375934A1 (en) * 2020-10-30 2023-11-23 Cymer, Llc Optical component for deep ultraviolet light source
CN117374146B (zh) * 2023-12-06 2024-11-12 山东大学 半导体探测器及其能量自刻度、状态监测方法

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