TW200941550A - Particle beam assisted modification of thin film materials - Google Patents

Particle beam assisted modification of thin film materials Download PDF

Info

Publication number
TW200941550A
TW200941550A TW097143919A TW97143919A TW200941550A TW 200941550 A TW200941550 A TW 200941550A TW 097143919 A TW097143919 A TW 097143919A TW 97143919 A TW97143919 A TW 97143919A TW 200941550 A TW200941550 A TW 200941550A
Authority
TW
Taiwan
Prior art keywords
substrate
particle beam
processing
particles
substrate according
Prior art date
Application number
TW097143919A
Other languages
English (en)
Chinese (zh)
Inventor
Jonathan G England
Frank Sinclair
John Bon-Woong Koo
Rajesh Dorai
Ludovic Godet
Original Assignee
Varian Semiconductor Equipment
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Varian Semiconductor Equipment filed Critical Varian Semiconductor Equipment
Publication of TW200941550A publication Critical patent/TW200941550A/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H10P14/3818—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using particle beams
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B1/00—Single-crystal growth directly from the solid state
    • C30B1/02—Single-crystal growth directly from the solid state by thermal treatment, e.g. strain annealing
    • C30B1/023—Single-crystal growth directly from the solid state by thermal treatment, e.g. strain annealing from solids with amorphous structure
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/164—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells
    • H10F10/165—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells the heterojunctions being Group IV-IV heterojunctions, e.g. Si/Ge, SiGe/Si or Si/SiC photovoltaic cells
    • H10F10/166—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells the heterojunctions being Group IV-IV heterojunctions, e.g. Si/Ge, SiGe/Si or Si/SiC photovoltaic cells the Group IV-IV heterojunctions being heterojunctions of crystalline and amorphous materials, e.g. silicon heterojunction [SHJ] photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/10—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material
    • H10F71/103—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material including only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H10F71/1221—The active layers comprising only Group IV materials comprising polycrystalline silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
    • H10P34/40—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation
    • H10P34/42—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation with electromagnetic radiation, e.g. laser annealing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2922—Materials being non-crystalline insulating materials, e.g. glass or polymers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/546—Polycrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Recrystallisation Techniques (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Photovoltaic Devices (AREA)
TW097143919A 2007-11-13 2008-11-13 Particle beam assisted modification of thin film materials TW200941550A (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US98762907P 2007-11-13 2007-11-13
US98765007P 2007-11-13 2007-11-13
US98766707P 2007-11-13 2007-11-13
US12/269,327 US20090124065A1 (en) 2007-11-13 2008-11-12 Particle beam assisted modification of thin film materials

Publications (1)

Publication Number Publication Date
TW200941550A true TW200941550A (en) 2009-10-01

Family

ID=40624096

Family Applications (3)

Application Number Title Priority Date Filing Date
TW097143919A TW200941550A (en) 2007-11-13 2008-11-13 Particle beam assisted modification of thin film materials
TW097143914A TW200943432A (en) 2007-11-13 2008-11-13 Particle beam assisted modification of thin film materials
TW097143912A TW200941549A (en) 2007-11-13 2008-11-13 Particle beam assisted modification of thin film materials

Family Applications After (2)

Application Number Title Priority Date Filing Date
TW097143914A TW200943432A (en) 2007-11-13 2008-11-13 Particle beam assisted modification of thin film materials
TW097143912A TW200941549A (en) 2007-11-13 2008-11-13 Particle beam assisted modification of thin film materials

Country Status (6)

Country Link
US (3) US20090124065A1 (https=)
JP (3) JP2011503882A (https=)
KR (3) KR20100086042A (https=)
CN (3) CN101911250A (https=)
TW (3) TW200941550A (https=)
WO (3) WO2009064867A2 (https=)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102099870A (zh) * 2008-06-11 2011-06-15 因特瓦克公司 用于在太阳能电池制作中使用的专用注入系统和方法
US20100053817A1 (en) * 2008-09-04 2010-03-04 Robert Glenn Biskeborn Coated magnetic head and methods for fabrication thereof
US8962376B2 (en) * 2009-04-21 2015-02-24 The Silanna Group Pty Ltd Optoelectronic device with lateral pin or pin junction
FR2946335B1 (fr) * 2009-06-05 2011-09-02 Saint Gobain Procede de depot de couche mince et produit obtenu.
US8749053B2 (en) 2009-06-23 2014-06-10 Intevac, Inc. Plasma grid implant system for use in solar cell fabrications
US20110039034A1 (en) * 2009-08-11 2011-02-17 Helen Maynard Pulsed deposition and recrystallization and tandem solar cell design utilizing crystallized/amorphous material
TWI459444B (zh) * 2009-11-30 2014-11-01 應用材料股份有限公司 在半導體應用上的結晶處理
DE112012002072B4 (de) * 2011-05-13 2023-11-16 Sumco Corp. Verfahren zur Herstellung eines epitaktischen Siliciumwafers, epitaktischer Siliciumwafer und Verfahren zur Herstellung einer Festkörperbildaufnahmevorrichtung
KR20120131753A (ko) * 2011-05-26 2012-12-05 삼성디스플레이 주식회사 박막 트랜지스터, 박막 트랜지스터의 제조 방법 및 유기 발광 표시 장치
US8652974B2 (en) * 2011-06-22 2014-02-18 Ipg Photonics Corporation Method and system for pre-heating of semiconductor material for laser annealing and gas immersion laser doping
TWI506719B (zh) 2011-11-08 2015-11-01 因特瓦克公司 基板處理系統及方法
US9318332B2 (en) 2012-12-19 2016-04-19 Intevac, Inc. Grid for plasma ion implant
CN106898540B (zh) * 2015-12-17 2020-01-31 宸鸿光电科技股份有限公司 半导体制造方法
DE102017119571B4 (de) 2017-08-25 2024-03-14 Infineon Technologies Ag Ionenimplantationsverfahren und ionenimplantationsvorrichtung
JP6812962B2 (ja) * 2017-12-26 2021-01-13 株式会社Sumco エピタキシャルシリコンウェーハの製造方法
CN111668353B (zh) * 2020-06-19 2021-12-17 錼创显示科技股份有限公司 发光半导体结构及半导体基板
TWI728846B (zh) 2020-06-19 2021-05-21 錼創顯示科技股份有限公司 發光半導體結構及發光半導體基板
US20230375934A1 (en) * 2020-10-30 2023-11-23 Cymer, Llc Optical component for deep ultraviolet light source
CN117374146B (zh) * 2023-12-06 2024-11-12 山东大学 半导体探测器及其能量自刻度、状态监测方法

Family Cites Families (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5758315A (en) 1980-09-25 1982-04-08 Toshiba Corp Manufacture of semiconductor single crystal film
JPS57148341A (en) * 1981-03-09 1982-09-13 Nippon Telegr & Teleph Corp <Ntt> Crystal growth of amorphous layer or polycrystalline layer on single crystal layer
US4622093A (en) * 1983-07-27 1986-11-11 At&T Bell Laboratories Method of selective area epitaxial growth using ion beams
JPS6037719A (ja) * 1983-08-10 1985-02-27 Seiko Epson Corp 半導体装置の製造方法
JP2595525B2 (ja) * 1987-04-10 1997-04-02 ソニー株式会社 半導体薄膜の形成方法
JPH0319321A (ja) * 1989-06-16 1991-01-28 Fujitsu Ltd 半導体結晶形成方法
JP2726118B2 (ja) * 1989-09-26 1998-03-11 キヤノン株式会社 堆積膜形成法
JP2662058B2 (ja) * 1989-11-14 1997-10-08 日本板硝子株式会社 半導体膜の製造方法
JPH04294523A (ja) * 1991-03-22 1992-10-19 Toshiba Corp 半導体装置の製造方法
JP2662321B2 (ja) * 1991-05-31 1997-10-08 科学技術振興事業団 超低速クラスターイオンビームによる表面処理方法
JPH0529215A (ja) * 1991-07-22 1993-02-05 Nippon Telegr & Teleph Corp <Ntt> ビームアニール方法
JP3194608B2 (ja) * 1991-11-15 2001-07-30 株式会社ニューラルシステムズ 中性粒子のビーム照射による再結晶化方法
US5350926A (en) * 1993-03-11 1994-09-27 Diamond Semiconductor Group, Inc. Compact high current broad beam ion implanter
JP3450376B2 (ja) * 1993-06-12 2003-09-22 株式会社半導体エネルギー研究所 半導体装置の作製方法
DE69430230T2 (de) * 1993-10-14 2002-10-31 Mega Chips Corp., Osaka Verfahren und Vorrichtung zur Herstellung eines Einkristallinen dünnen Films
US6884698B1 (en) * 1994-02-23 2005-04-26 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device with crystallization of amorphous silicon
JPH09153458A (ja) * 1995-09-26 1997-06-10 Fujitsu Ltd 薄膜半導体装置およびその製造方法
JP3841910B2 (ja) 1996-02-15 2006-11-08 株式会社半導体エネルギー研究所 半導体装置の作製方法
JPH10256153A (ja) 1997-03-17 1998-09-25 Nippon Telegr & Teleph Corp <Ntt> 非晶質Ｓｉ層の低温単結晶化法
US6200631B1 (en) * 1997-10-27 2001-03-13 Praxair Technology, Inc. Method for producing corrosion resistant refractories
KR19990050318A (ko) 1997-12-17 1999-07-05 윤덕용 저온공정에 의한 비정질 실리콘 박막의 결정화 방법
US6130436A (en) * 1998-06-02 2000-10-10 Varian Semiconductor Equipment Associates, Inc. Acceleration and analysis architecture for ion implanter
US6635880B1 (en) * 1999-10-05 2003-10-21 Varian Semiconductor Equipment Associates, Inc. High transmission, low energy beamline architecture for ion implanter
JP4869504B2 (ja) * 2000-06-27 2012-02-08 株式会社半導体エネルギー研究所 半導体装置の作製方法
EP1288996B1 (en) 2001-09-04 2006-03-22 Advantest Corporation Particle beam apparatus
US6933507B2 (en) * 2002-07-17 2005-08-23 Kenneth H. Purser Controlling the characteristics of implanter ion-beams
TW569350B (en) 2002-10-31 2004-01-01 Au Optronics Corp Method for fabricating a polysilicon layer
WO2005021430A1 (ja) * 2003-08-27 2005-03-10 Nu Eco Engineering Co., Ltd. カーボンナノウォールの製造方法、カーボンナノウォールおよび製造装置
US20060113489A1 (en) * 2004-11-30 2006-06-01 Axcelis Technologies, Inc. Optimization of beam utilization
JP2006245326A (ja) 2005-03-03 2006-09-14 Ａ．Ｓ．Ｋ．株式会社 単結晶シリコン薄膜トランジスタ
US7482598B2 (en) * 2005-12-07 2009-01-27 Varian Semiconductor Equipment Associates, Inc. Techniques for preventing parasitic beamlets from affecting ion implantation

Also Published As

Publication number Publication date
WO2009064867A3 (en) 2009-07-02
US8003498B2 (en) 2011-08-23
TW200941549A (en) 2009-10-01
WO2009064872A3 (en) 2009-07-02
CN101911255A (zh) 2010-12-08
WO2009064872A2 (en) 2009-05-22
US20090124065A1 (en) 2009-05-14
JP2011503882A (ja) 2011-01-27
CN101911250A (zh) 2010-12-08
WO2009064875A1 (en) 2009-05-22
KR20100106374A (ko) 2010-10-01
WO2009064867A2 (en) 2009-05-22
CN101897006A (zh) 2010-11-24
US20090124066A1 (en) 2009-05-14
JP2011503883A (ja) 2011-01-27
US20090124064A1 (en) 2009-05-14
KR20100086042A (ko) 2010-07-29
TW200943432A (en) 2009-10-16
JP2011505685A (ja) 2011-02-24
KR20100105595A (ko) 2010-09-29

Similar Documents

Publication Publication Date Title
TW200941550A (en) Particle beam assisted modification of thin film materials
TWI288964B (en) Method of manufacturing CMOS devices by the implantation of N-and P-type cluster ions and negative ions
CN102763230B (zh) 制造半导体层的方法和装置
JP2011503883A5 (https=)
JP5008779B2 (ja) 多結晶型太陽電池パネルおよびその製造方法
CN107039251B (zh) 用于太阳能电池制造中的固相外延再生长的直流离子注入
TW201133552A (en) Pulsed deposition and recrystallization and tandem solar cell design utilizing crystallized/amorphous material
TW200537579A (en) Ion doping apparatus, ion doping method, semiconductor device, and method of fabricating semiconductor device
KR101366745B1 (ko) 물리기상증착법으로 제조된 p형 실리콘 박막에 전자빔 조사를 통한 대면적 결정화 공정을 포함하는 태양전지의 제조방법 및 이에 따른 태양전지
JP2015035467A (ja) 貼り合わせウェーハの製造方法および貼り合わせウェーハ
KR101194060B1 (ko) 물리 기상 증착법을 이용한 태양 전지의 제조 방법 및 이에 따른 태양 전지
Renau Recent developments in ion implantation
KR101366743B1 (ko) 다결정 실리콘 박막 태양전지의 제조방법 및 이에 의하여 제조된 다결정 실리콘 박막 태양전지
US8697549B2 (en) Deposition of porous films for thermoelectric applications
JP2004303920A (ja) 半導体薄膜製造装置
WO2011017774A1 (en) Acceptor modulation doping of nanocrystals and quantum structures
HK1188335B (en) Direct current ion implantation for solid phase epitaxial regrowth in solar cell fabrication
HK1188335A (en) Direct current ion implantation for solid phase epitaxial regrowth in solar cell fabrication