JP2011502788A5 - - Google Patents

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Publication number
JP2011502788A5
JP2011502788A5 JP2010532069A JP2010532069A JP2011502788A5 JP 2011502788 A5 JP2011502788 A5 JP 2011502788A5 JP 2010532069 A JP2010532069 A JP 2010532069A JP 2010532069 A JP2010532069 A JP 2010532069A JP 2011502788 A5 JP2011502788 A5 JP 2011502788A5
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JP
Japan
Prior art keywords
substrate
light beam
axis
processing
metal structure
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Application number
JP2010532069A
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English (en)
Japanese (ja)
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JP5523328B2 (ja
JP2011502788A (ja
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Priority claimed from US11/982,788 external-priority patent/US20090114630A1/en
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Publication of JP2011502788A publication Critical patent/JP2011502788A/ja
Publication of JP2011502788A5 publication Critical patent/JP2011502788A5/ja
Application granted granted Critical
Publication of JP5523328B2 publication Critical patent/JP5523328B2/ja
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JP2010532069A 2007-11-05 2008-11-03 表面反射率の変化の最小化 Active JP5523328B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/982,788 US20090114630A1 (en) 2007-11-05 2007-11-05 Minimization of surface reflectivity variations
US11/982,788 2007-11-05
PCT/US2008/012423 WO2009061384A1 (en) 2007-11-05 2008-11-03 Minimization of surface reflectivity variations

Publications (3)

Publication Number Publication Date
JP2011502788A JP2011502788A (ja) 2011-01-27
JP2011502788A5 true JP2011502788A5 (enExample) 2012-01-26
JP5523328B2 JP5523328B2 (ja) 2014-06-18

Family

ID=40587061

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010532069A Active JP5523328B2 (ja) 2007-11-05 2008-11-03 表面反射率の変化の最小化

Country Status (5)

Country Link
US (2) US20090114630A1 (enExample)
JP (1) JP5523328B2 (enExample)
KR (1) KR101382994B1 (enExample)
TW (1) TWI403375B (enExample)
WO (1) WO2009061384A1 (enExample)

Families Citing this family (18)

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Publication number Priority date Publication date Assignee Title
US7057256B2 (en) 2001-05-25 2006-06-06 President & Fellows Of Harvard College Silicon-based visible and near-infrared optoelectric devices
US7442629B2 (en) 2004-09-24 2008-10-28 President & Fellows Of Harvard College Femtosecond laser-induced formation of submicrometer spikes on a semiconductor substrate
US9911781B2 (en) 2009-09-17 2018-03-06 Sionyx, Llc Photosensitive imaging devices and associated methods
US9673243B2 (en) 2009-09-17 2017-06-06 Sionyx, Llc Photosensitive imaging devices and associated methods
US8692198B2 (en) 2010-04-21 2014-04-08 Sionyx, Inc. Photosensitive imaging devices and associated methods
US20120146172A1 (en) 2010-06-18 2012-06-14 Sionyx, Inc. High Speed Photosensitive Devices and Associated Methods
US9496308B2 (en) 2011-06-09 2016-11-15 Sionyx, Llc Process module for increasing the response of backside illuminated photosensitive imagers and associated methods
US20130016203A1 (en) 2011-07-13 2013-01-17 Saylor Stephen D Biometric imaging devices and associated methods
JP2013120936A (ja) * 2011-12-07 2013-06-17 Ultratech Inc パターン効果を低減したＧａＮＬＥＤのレーザーアニール
DE102012202020A1 (de) * 2012-02-10 2013-08-14 Homag Holzbearbeitungssysteme Gmbh Aktivierungsoptimierung
US9064764B2 (en) 2012-03-22 2015-06-23 Sionyx, Inc. Pixel isolation elements, devices, and associated methods
US20140154891A1 (en) * 2012-08-22 2014-06-05 Sionyx, Inc. Beam Delivery Systems for Laser Processing Materials and Associated Methods
JP6466346B2 (ja) 2013-02-15 2019-02-06 サイオニクス、エルエルシー アンチブルーミング特性を有するハイダイナミックレンジｃｍｏｓ画像センサおよび関連づけられた方法
WO2014151093A1 (en) 2013-03-15 2014-09-25 Sionyx, Inc. Three dimensional imaging utilizing stacked imager devices and associated methods
US9209345B2 (en) 2013-06-29 2015-12-08 Sionyx, Inc. Shallow trench textured regions and associated methods
JP6389638B2 (ja) * 2014-05-12 2018-09-12 株式会社ディスコ レーザー加工装置
CN106935491B (zh) * 2015-12-30 2021-10-12 上海微电子装备（集团）股份有限公司 一种激光退火装置及其退火方法
KR102506098B1 (ko) * 2019-09-11 2023-03-06 타이완 세미콘덕터 매뉴팩쳐링 컴퍼니 리미티드 웨이퍼 결정 배향을 추정하는 방법 및 시스템

Family Cites Families (13)

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Publication number Priority date Publication date Assignee Title
US4336439A (en) * 1980-10-02 1982-06-22 Coherent, Inc. Method and apparatus for laser scribing and cutting
JPH01173707A (ja) * 1987-12-28 1989-07-10 Matsushita Electric Ind Co Ltd レーザアニール方法
US6268586B1 (en) * 1998-04-30 2001-07-31 The Regents Of The University Of California Method and apparatus for improving the quality and efficiency of ultrashort-pulse laser machining
US7015422B2 (en) * 2000-12-21 2006-03-21 Mattson Technology, Inc. System and process for heating semiconductor wafers by optimizing absorption of electromagnetic energy
US6750423B2 (en) * 2001-10-25 2004-06-15 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation method, laser irradiation apparatus, and method of manufacturing a semiconductor device
US7154066B2 (en) * 2002-11-06 2006-12-26 Ultratech, Inc. Laser scanning apparatus and methods for thermal processing
TWI225705B (en) * 2003-05-02 2004-12-21 Toppoly Optoelectronics Corp Electrostatic discharge protection device and manufacturing method thereof
US6875661B2 (en) * 2003-07-10 2005-04-05 International Business Machines Corporation Solution deposition of chalcogenide films
US7098155B2 (en) * 2003-09-29 2006-08-29 Ultratech, Inc. Laser thermal annealing of lightly doped silicon substrates
TWI297521B (en) * 2004-01-22 2008-06-01 Ultratech Inc Laser thermal annealing of lightly doped silicon substrates
TWI272149B (en) * 2004-02-26 2007-02-01 Ultratech Inc Laser scanning apparatus and methods for thermal processing
US7238915B2 (en) * 2005-09-26 2007-07-03 Ultratech, Inc. Methods and apparatus for irradiating a substrate to avoid substrate edge damage
US7538868B2 (en) * 2005-12-19 2009-05-26 Kla-Tencor Technologies Corporation Pattern recognition matching for bright field imaging of low contrast semiconductor devices

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