JP2011502788A5 - - Google Patents

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Publication number
JP2011502788A5
JP2011502788A5 JP2010532069A JP2010532069A JP2011502788A5 JP 2011502788 A5 JP2011502788 A5 JP 2011502788A5 JP 2010532069 A JP2010532069 A JP 2010532069A JP 2010532069 A JP2010532069 A JP 2010532069A JP 2011502788 A5 JP2011502788 A5 JP 2011502788A5
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JP
Japan
Prior art keywords
substrate
light beam
axis
processing
metal structure
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Application number
JP2010532069A
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English (en)
Japanese (ja)
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JP2011502788A (ja
JP5523328B2 (ja
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Priority claimed from US11/982,788 external-priority patent/US20090114630A1/en
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Publication of JP2011502788A publication Critical patent/JP2011502788A/ja
Publication of JP2011502788A5 publication Critical patent/JP2011502788A5/ja
Application granted granted Critical
Publication of JP5523328B2 publication Critical patent/JP5523328B2/ja
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JP2010532069A 2007-11-05 2008-11-03 表面反射率の変化の最小化 Active JP5523328B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/982,788 2007-11-05
US11/982,788 US20090114630A1 (en) 2007-11-05 2007-11-05 Minimization of surface reflectivity variations
PCT/US2008/012423 WO2009061384A1 (en) 2007-11-05 2008-11-03 Minimization of surface reflectivity variations

Publications (3)

Publication Number Publication Date
JP2011502788A JP2011502788A (ja) 2011-01-27
JP2011502788A5 true JP2011502788A5 (enExample) 2012-01-26
JP5523328B2 JP5523328B2 (ja) 2014-06-18

Family

ID=40587061

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010532069A Active JP5523328B2 (ja) 2007-11-05 2008-11-03 表面反射率の変化の最小化

Country Status (5)

Country Link
US (2) US20090114630A1 (enExample)
JP (1) JP5523328B2 (enExample)
KR (1) KR101382994B1 (enExample)
TW (1) TWI403375B (enExample)
WO (1) WO2009061384A1 (enExample)

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US7442629B2 (en) 2004-09-24 2008-10-28 President & Fellows Of Harvard College Femtosecond laser-induced formation of submicrometer spikes on a semiconductor substrate
US7057256B2 (en) 2001-05-25 2006-06-06 President & Fellows Of Harvard College Silicon-based visible and near-infrared optoelectric devices
US9911781B2 (en) 2009-09-17 2018-03-06 Sionyx, Llc Photosensitive imaging devices and associated methods
US9673243B2 (en) 2009-09-17 2017-06-06 Sionyx, Llc Photosensitive imaging devices and associated methods
US8692198B2 (en) 2010-04-21 2014-04-08 Sionyx, Inc. Photosensitive imaging devices and associated methods
US20120146172A1 (en) 2010-06-18 2012-06-14 Sionyx, Inc. High Speed Photosensitive Devices and Associated Methods
US9496308B2 (en) 2011-06-09 2016-11-15 Sionyx, Llc Process module for increasing the response of backside illuminated photosensitive imagers and associated methods
CN103946867A (zh) 2011-07-13 2014-07-23 西奥尼克斯公司 生物计量成像装置和相关方法
JP2013120936A (ja) * 2011-12-07 2013-06-17 Ultratech Inc パターン効果を低減したＧａＮＬＥＤのレーザーアニール
DE102012202020A1 (de) * 2012-02-10 2013-08-14 Homag Holzbearbeitungssysteme Gmbh Aktivierungsoptimierung
US9064764B2 (en) 2012-03-22 2015-06-23 Sionyx, Inc. Pixel isolation elements, devices, and associated methods
US20140154891A1 (en) * 2012-08-22 2014-06-05 Sionyx, Inc. Beam Delivery Systems for Laser Processing Materials and Associated Methods
KR20150130303A (ko) 2013-02-15 2015-11-23 사이오닉스, 아이엔씨. 안티 블루밍 특성 및 관련 방법을 가지는 높은 동적 범위의 cmos 이미지 센서
WO2014151093A1 (en) 2013-03-15 2014-09-25 Sionyx, Inc. Three dimensional imaging utilizing stacked imager devices and associated methods
US9209345B2 (en) 2013-06-29 2015-12-08 Sionyx, Inc. Shallow trench textured regions and associated methods
JP6389638B2 (ja) * 2014-05-12 2018-09-12 株式会社ディスコ レーザー加工装置
CN106935491B (zh) * 2015-12-30 2021-10-12 上海微电子装备（集团）股份有限公司 一种激光退火装置及其退火方法
KR102506098B1 (ko) * 2019-09-11 2023-03-06 타이완 세미콘덕터 매뉴팩쳐링 컴퍼니 리미티드 웨이퍼 결정 배향을 추정하는 방법 및 시스템
US12062583B2 (en) * 2021-03-11 2024-08-13 Applied Materials Israel Ltd. Optical metrology models for in-line film thickness measurements

Family Cites Families (13)

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Publication number Priority date Publication date Assignee Title
US4336439A (en) * 1980-10-02 1982-06-22 Coherent, Inc. Method and apparatus for laser scribing and cutting
JPH01173707A (ja) * 1987-12-28 1989-07-10 Matsushita Electric Ind Co Ltd レーザアニール方法
US6268586B1 (en) * 1998-04-30 2001-07-31 The Regents Of The University Of California Method and apparatus for improving the quality and efficiency of ultrashort-pulse laser machining
US7015422B2 (en) * 2000-12-21 2006-03-21 Mattson Technology, Inc. System and process for heating semiconductor wafers by optimizing absorption of electromagnetic energy
US6750423B2 (en) * 2001-10-25 2004-06-15 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation method, laser irradiation apparatus, and method of manufacturing a semiconductor device
US7154066B2 (en) * 2002-11-06 2006-12-26 Ultratech, Inc. Laser scanning apparatus and methods for thermal processing
TWI225705B (en) * 2003-05-02 2004-12-21 Toppoly Optoelectronics Corp Electrostatic discharge protection device and manufacturing method thereof
US6875661B2 (en) * 2003-07-10 2005-04-05 International Business Machines Corporation Solution deposition of chalcogenide films
US7098155B2 (en) * 2003-09-29 2006-08-29 Ultratech, Inc. Laser thermal annealing of lightly doped silicon substrates
TWI297521B (en) * 2004-01-22 2008-06-01 Ultratech Inc Laser thermal annealing of lightly doped silicon substrates
TWI272149B (en) * 2004-02-26 2007-02-01 Ultratech Inc Laser scanning apparatus and methods for thermal processing
US7238915B2 (en) * 2005-09-26 2007-07-03 Ultratech, Inc. Methods and apparatus for irradiating a substrate to avoid substrate edge damage
US7538868B2 (en) * 2005-12-19 2009-05-26 Kla-Tencor Technologies Corporation Pattern recognition matching for bright field imaging of low contrast semiconductor devices

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