TWI403375B - 最小化表面反射性變化的技術 - Google Patents

最小化表面反射性變化的技術 Download PDF

Info

Publication number
TWI403375B
TWI403375B TW097141767A TW97141767A TWI403375B TW I403375 B TWI403375 B TW I403375B TW 097141767 A TW097141767 A TW 097141767A TW 97141767 A TW97141767 A TW 97141767A TW I403375 B TWI403375 B TW I403375B
Authority
TW
Taiwan
Prior art keywords
substrate
angle
reflectivity
axis
radiation
Prior art date
Application number
TW097141767A
Other languages
English (en)
Chinese (zh)
Other versions
TW200930488A (en
Inventor
Andrew M Hawryluk
Original Assignee
Ultratech Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ultratech Inc filed Critical Ultratech Inc
Publication of TW200930488A publication Critical patent/TW200930488A/zh
Application granted granted Critical
Publication of TWI403375B publication Critical patent/TWI403375B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/352—Working by laser beam, e.g. welding, cutting or boring for surface treatment
    • B23K26/354—Working by laser beam, e.g. welding, cutting or boring for surface treatment by melting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/073—Shaping the laser spot
    • B23K26/0738—Shaping the laser spot into a linear shape
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/08—Devices involving relative movement between laser beam and workpiece
    • B23K26/083—Devices involving movement of the workpiece in at least one axial direction
    • B23K26/0853—Devices involving movement of the workpiece in at least in two axial directions, e.g. in a plane
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/352—Working by laser beam, e.g. welding, cutting or boring for surface treatment
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00—Articles made by soldering, welding or cutting
    • B23K2101/36—Electric or electronic devices
    • B23K2101/40—Semiconductor devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
    • B23K2103/56—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26 semiconducting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
    • H01L21/28035—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities
    • H01L21/28044—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities the conductor comprising at least another non-silicon conductive layer

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Electromagnetism (AREA)
  • Recrystallisation Techniques (AREA)
TW097141767A 2007-11-05 2008-10-30 最小化表面反射性變化的技術 TWI403375B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/982,788 US20090114630A1 (en) 2007-11-05 2007-11-05 Minimization of surface reflectivity variations

Publications (2)

Publication Number Publication Date
TW200930488A TW200930488A (en) 2009-07-16
TWI403375B true TWI403375B (zh) 2013-08-01

Family

ID=40587061

Family Applications (1)

Application Number Title Priority Date Filing Date
TW097141767A TWI403375B (zh) 2007-11-05 2008-10-30 最小化表面反射性變化的技術

Country Status (5)

Country Link
US (2) US20090114630A1 (enExample)
JP (1) JP5523328B2 (enExample)
KR (1) KR101382994B1 (enExample)
TW (1) TWI403375B (enExample)
WO (1) WO2009061384A1 (enExample)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7057256B2 (en) 2001-05-25 2006-06-06 President & Fellows Of Harvard College Silicon-based visible and near-infrared optoelectric devices
US7442629B2 (en) 2004-09-24 2008-10-28 President & Fellows Of Harvard College Femtosecond laser-induced formation of submicrometer spikes on a semiconductor substrate
US9911781B2 (en) 2009-09-17 2018-03-06 Sionyx, Llc Photosensitive imaging devices and associated methods
US9673243B2 (en) 2009-09-17 2017-06-06 Sionyx, Llc Photosensitive imaging devices and associated methods
US8692198B2 (en) 2010-04-21 2014-04-08 Sionyx, Inc. Photosensitive imaging devices and associated methods
US20120146172A1 (en) 2010-06-18 2012-06-14 Sionyx, Inc. High Speed Photosensitive Devices and Associated Methods
US9496308B2 (en) 2011-06-09 2016-11-15 Sionyx, Llc Process module for increasing the response of backside illuminated photosensitive imagers and associated methods
US20130016203A1 (en) 2011-07-13 2013-01-17 Saylor Stephen D Biometric imaging devices and associated methods
JP2013120936A (ja) * 2011-12-07 2013-06-17 Ultratech Inc パターン効果を低減したＧａＮＬＥＤのレーザーアニール
DE102012202020A1 (de) * 2012-02-10 2013-08-14 Homag Holzbearbeitungssysteme Gmbh Aktivierungsoptimierung
US9064764B2 (en) 2012-03-22 2015-06-23 Sionyx, Inc. Pixel isolation elements, devices, and associated methods
US20140154891A1 (en) * 2012-08-22 2014-06-05 Sionyx, Inc. Beam Delivery Systems for Laser Processing Materials and Associated Methods
JP6466346B2 (ja) 2013-02-15 2019-02-06 サイオニクス、エルエルシー アンチブルーミング特性を有するハイダイナミックレンジｃｍｏｓ画像センサおよび関連づけられた方法
WO2014151093A1 (en) 2013-03-15 2014-09-25 Sionyx, Inc. Three dimensional imaging utilizing stacked imager devices and associated methods
US9209345B2 (en) 2013-06-29 2015-12-08 Sionyx, Inc. Shallow trench textured regions and associated methods
JP6389638B2 (ja) * 2014-05-12 2018-09-12 株式会社ディスコ レーザー加工装置
CN106935491B (zh) * 2015-12-30 2021-10-12 上海微电子装备（集团）股份有限公司 一种激光退火装置及其退火方法
KR102506098B1 (ko) * 2019-09-11 2023-03-06 타이완 세미콘덕터 매뉴팩쳐링 컴퍼니 리미티드 웨이퍼 결정 배향을 추정하는 방법 및 시스템

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6268586B1 (en) * 1998-04-30 2001-07-31 The Regents Of The University Of California Method and apparatus for improving the quality and efficiency of ultrashort-pulse laser machining
US6750423B2 (en) * 2001-10-25 2004-06-15 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation method, laser irradiation apparatus, and method of manufacturing a semiconductor device
US20040188396A1 (en) * 2002-11-06 2004-09-30 Somit Talwar Laser scanning apparatus and methods for thermal processing
TW200518168A (en) * 2003-07-10 2005-06-01 Ibm Solution deposition of chalcogenide films
US7098155B2 (en) * 2003-09-29 2006-08-29 Ultratech, Inc. Laser thermal annealing of lightly doped silicon substrates
US20070139645A1 (en) * 2005-12-19 2007-06-21 Kla Tencor, Inc. Pattern recognition matching for bright field imaging of low contrast semiconductor devices

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4336439A (en) * 1980-10-02 1982-06-22 Coherent, Inc. Method and apparatus for laser scribing and cutting
JPH01173707A (ja) * 1987-12-28 1989-07-10 Matsushita Electric Ind Co Ltd レーザアニール方法
US7015422B2 (en) * 2000-12-21 2006-03-21 Mattson Technology, Inc. System and process for heating semiconductor wafers by optimizing absorption of electromagnetic energy
TWI225705B (en) * 2003-05-02 2004-12-21 Toppoly Optoelectronics Corp Electrostatic discharge protection device and manufacturing method thereof
TWI297521B (en) * 2004-01-22 2008-06-01 Ultratech Inc Laser thermal annealing of lightly doped silicon substrates
TWI272149B (en) * 2004-02-26 2007-02-01 Ultratech Inc Laser scanning apparatus and methods for thermal processing
US7238915B2 (en) * 2005-09-26 2007-07-03 Ultratech, Inc. Methods and apparatus for irradiating a substrate to avoid substrate edge damage

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6268586B1 (en) * 1998-04-30 2001-07-31 The Regents Of The University Of California Method and apparatus for improving the quality and efficiency of ultrashort-pulse laser machining
US6750423B2 (en) * 2001-10-25 2004-06-15 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation method, laser irradiation apparatus, and method of manufacturing a semiconductor device
US20040188396A1 (en) * 2002-11-06 2004-09-30 Somit Talwar Laser scanning apparatus and methods for thermal processing
TW200518168A (en) * 2003-07-10 2005-06-01 Ibm Solution deposition of chalcogenide films
US7098155B2 (en) * 2003-09-29 2006-08-29 Ultratech, Inc. Laser thermal annealing of lightly doped silicon substrates
US20070139645A1 (en) * 2005-12-19 2007-06-21 Kla Tencor, Inc. Pattern recognition matching for bright field imaging of low contrast semiconductor devices

Also Published As

Publication number Publication date
JP5523328B2 (ja) 2014-06-18
WO2009061384A1 (en) 2009-05-14
JP2011502788A (ja) 2011-01-27
US20120223062A1 (en) 2012-09-06
KR101382994B1 (ko) 2014-04-09
KR20100077000A (ko) 2010-07-06
TW200930488A (en) 2009-07-16
US20090114630A1 (en) 2009-05-07

Similar Documents

Publication Publication Date Title
TWI403375B (zh) 最小化表面反射性變化的技術
US8314360B2 (en) Apparatuses and methods for irradiating a substrate to avoid substrate edge damage
TWI446473B (zh) 翹曲減少及／或應變受控制之基板加工技術
TWI469239B (zh) 以前尖波溫度及後尖波溫度之控制進行基材熱處理技術
TWI459539B (zh) 用以形成立體電路之系統及方法
US7279721B2 (en) Dual wavelength thermal flux laser anneal
KR100776949B1 (ko) 열처리용 레이저 스캐닝 장치 및 방법
JP5517396B2 (ja) 低濃度ドープシリコン基板のレーザー熱アニール
JP5094825B2 (ja) 低濃度ドープされたシリコン基板のレーザ熱アニール
JP5053636B2 (ja) レーザーダイオード放射線によるレーザー熱処理
CN106935491A (zh) 一种激光退火装置及其退火方法
US8071908B1 (en) Edge with minimal diffraction effects
US7238915B2 (en) Methods and apparatus for irradiating a substrate to avoid substrate edge damage
TWI695419B (zh) 圖案化半導體裝置的雷射照射方法

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees