KR101382994B1 - 표면 반사도 변화의 최소화 - Google Patents

표면 반사도 변화의 최소화 Download PDF

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Publication number
KR101382994B1
KR101382994B1 KR1020107009556A KR20107009556A KR101382994B1 KR 101382994 B1 KR101382994 B1 KR 101382994B1 KR 1020107009556 A KR1020107009556 A KR 1020107009556A KR 20107009556 A KR20107009556 A KR 20107009556A KR 101382994 B1 KR101382994 B1 KR 101382994B1
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KR
South Korea
Prior art keywords
substrate
angle
incidence
light beam
reflectivity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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KR1020107009556A
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English (en)
Korean (ko)
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KR20100077000A (ko
Inventor
앤드류 엠 하우리룩
Original Assignee
울트라테크 인크.
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Publication of KR20100077000A publication Critical patent/KR20100077000A/ko
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/352—Working by laser beam, e.g. welding, cutting or boring for surface treatment
    • B23K26/354—Working by laser beam, e.g. welding, cutting or boring for surface treatment by melting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/073—Shaping the laser spot
    • B23K26/0738—Shaping the laser spot into a linear shape
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/08—Devices involving relative movement between laser beam and workpiece
    • B23K26/083—Devices involving movement of the workpiece in at least one axial direction
    • B23K26/0853—Devices involving movement of the workpiece in at least in two axial directions, e.g. in a plane
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/352—Working by laser beam, e.g. welding, cutting or boring for surface treatment
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00—Articles made by soldering, welding or cutting
    • B23K2101/36—Electric or electronic devices
    • B23K2101/40—Semiconductor devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
    • B23K2103/56—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26 semiconducting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
    • H01L21/28035—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities
    • H01L21/28044—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities the conductor comprising at least another non-silicon conductive layer

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Electromagnetism (AREA)
  • Recrystallisation Techniques (AREA)
KR1020107009556A 2007-11-05 2008-11-03 표면 반사도 변화의 최소화 Expired - Fee Related KR101382994B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/982,788 US20090114630A1 (en) 2007-11-05 2007-11-05 Minimization of surface reflectivity variations
US11/982,788 2007-11-05
PCT/US2008/012423 WO2009061384A1 (en) 2007-11-05 2008-11-03 Minimization of surface reflectivity variations

Publications (2)

Publication Number Publication Date
KR20100077000A KR20100077000A (ko) 2010-07-06
KR101382994B1 true KR101382994B1 (ko) 2014-04-09

Family

ID=40587061

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020107009556A Expired - Fee Related KR101382994B1 (ko) 2007-11-05 2008-11-03 표면 반사도 변화의 최소화

Country Status (5)

Country Link
US (2) US20090114630A1 (enExample)
JP (1) JP5523328B2 (enExample)
KR (1) KR101382994B1 (enExample)
TW (1) TWI403375B (enExample)
WO (1) WO2009061384A1 (enExample)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7057256B2 (en) 2001-05-25 2006-06-06 President & Fellows Of Harvard College Silicon-based visible and near-infrared optoelectric devices
US7442629B2 (en) 2004-09-24 2008-10-28 President & Fellows Of Harvard College Femtosecond laser-induced formation of submicrometer spikes on a semiconductor substrate
US9911781B2 (en) 2009-09-17 2018-03-06 Sionyx, Llc Photosensitive imaging devices and associated methods
US9673243B2 (en) 2009-09-17 2017-06-06 Sionyx, Llc Photosensitive imaging devices and associated methods
US8692198B2 (en) 2010-04-21 2014-04-08 Sionyx, Inc. Photosensitive imaging devices and associated methods
US20120146172A1 (en) 2010-06-18 2012-06-14 Sionyx, Inc. High Speed Photosensitive Devices and Associated Methods
US9496308B2 (en) 2011-06-09 2016-11-15 Sionyx, Llc Process module for increasing the response of backside illuminated photosensitive imagers and associated methods
US20130016203A1 (en) 2011-07-13 2013-01-17 Saylor Stephen D Biometric imaging devices and associated methods
JP2013120936A (ja) * 2011-12-07 2013-06-17 Ultratech Inc パターン効果を低減したＧａＮＬＥＤのレーザーアニール
DE102012202020A1 (de) * 2012-02-10 2013-08-14 Homag Holzbearbeitungssysteme Gmbh Aktivierungsoptimierung
US9064764B2 (en) 2012-03-22 2015-06-23 Sionyx, Inc. Pixel isolation elements, devices, and associated methods
US20140154891A1 (en) * 2012-08-22 2014-06-05 Sionyx, Inc. Beam Delivery Systems for Laser Processing Materials and Associated Methods
JP6466346B2 (ja) 2013-02-15 2019-02-06 サイオニクス、エルエルシー アンチブルーミング特性を有するハイダイナミックレンジｃｍｏｓ画像センサおよび関連づけられた方法
WO2014151093A1 (en) 2013-03-15 2014-09-25 Sionyx, Inc. Three dimensional imaging utilizing stacked imager devices and associated methods
US9209345B2 (en) 2013-06-29 2015-12-08 Sionyx, Inc. Shallow trench textured regions and associated methods
JP6389638B2 (ja) * 2014-05-12 2018-09-12 株式会社ディスコ レーザー加工装置
CN106935491B (zh) * 2015-12-30 2021-10-12 上海微电子装备（集团）股份有限公司 一种激光退火装置及其退火方法
KR102506098B1 (ko) * 2019-09-11 2023-03-06 타이완 세미콘덕터 매뉴팩쳐링 컴퍼니 리미티드 웨이퍼 결정 배향을 추정하는 방법 및 시스템

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20050076768A (ko) * 2004-01-22 2005-07-27 울트라테크 인크. 저농도로 도핑된 실리콘 기판의 레이저 열 어닐링
KR20060043106A (ko) * 2004-02-26 2006-05-15 울트라테크 인크. 열 처리를 위한 레이저 주사 장치 및 방법

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US4336439A (en) * 1980-10-02 1982-06-22 Coherent, Inc. Method and apparatus for laser scribing and cutting
JPH01173707A (ja) * 1987-12-28 1989-07-10 Matsushita Electric Ind Co Ltd レーザアニール方法
US6268586B1 (en) * 1998-04-30 2001-07-31 The Regents Of The University Of California Method and apparatus for improving the quality and efficiency of ultrashort-pulse laser machining
US7015422B2 (en) * 2000-12-21 2006-03-21 Mattson Technology, Inc. System and process for heating semiconductor wafers by optimizing absorption of electromagnetic energy
US6750423B2 (en) * 2001-10-25 2004-06-15 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation method, laser irradiation apparatus, and method of manufacturing a semiconductor device
US7154066B2 (en) * 2002-11-06 2006-12-26 Ultratech, Inc. Laser scanning apparatus and methods for thermal processing
TWI225705B (en) * 2003-05-02 2004-12-21 Toppoly Optoelectronics Corp Electrostatic discharge protection device and manufacturing method thereof
US6875661B2 (en) * 2003-07-10 2005-04-05 International Business Machines Corporation Solution deposition of chalcogenide films
US7098155B2 (en) * 2003-09-29 2006-08-29 Ultratech, Inc. Laser thermal annealing of lightly doped silicon substrates
US7238915B2 (en) * 2005-09-26 2007-07-03 Ultratech, Inc. Methods and apparatus for irradiating a substrate to avoid substrate edge damage
US7538868B2 (en) * 2005-12-19 2009-05-26 Kla-Tencor Technologies Corporation Pattern recognition matching for bright field imaging of low contrast semiconductor devices

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KR20050076768A (ko) * 2004-01-22 2005-07-27 울트라테크 인크. 저농도로 도핑된 실리콘 기판의 레이저 열 어닐링
KR20060043106A (ko) * 2004-02-26 2006-05-15 울트라테크 인크. 열 처리를 위한 레이저 주사 장치 및 방법

Also Published As

Publication number Publication date
JP5523328B2 (ja) 2014-06-18
WO2009061384A1 (en) 2009-05-14
JP2011502788A (ja) 2011-01-27
US20120223062A1 (en) 2012-09-06
KR20100077000A (ko) 2010-07-06
TW200930488A (en) 2009-07-16
TWI403375B (zh) 2013-08-01
US20090114630A1 (en) 2009-05-07

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