CN103578943B - 一种激光退火装置及激光退火方法 - Google Patents
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- 230000003287 optical effect Effects 0.000 claims abstract description 6
- 230000006641 stabilisation Effects 0.000 claims abstract description 5
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- 238000006073 displacement reaction Methods 0.000 claims abstract description 3
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- 230000005284 excitation Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 230000002123 temporal effect Effects 0.000 description 2
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- 210000001367 artery Anatomy 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
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- 238000009792 diffusion process Methods 0.000 description 1
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- 239000007791 liquid phase Substances 0.000 description 1
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- 238000004080 punching Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000004151 rapid thermal annealing Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 230000011514 reflex Effects 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
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Abstract
本发明公开一种激光退火装置,包括:一激光光束发生模块,用于提供一稳定的单脉冲激光;一循环延时装置,用于将该单脉冲激光分解为若干子脉冲激光;一光学模块,用于将该子脉冲激光汇聚至一基底上;一运动台,用于为该基底提供至少一个自由度的位移。本发明同时公开一种激光退火方法。
Description
技术领域
本发明涉及一种应用于半导体材料加工技术领域,尤其涉及一种激光退火装置及激光退火方法。
背景技术
退火处理,主要是指将材料曝露于高温一段很长时间后,然后再慢慢冷却的热处理制程。传统的炉子加热退火,即使在高达1100度下退火,仍不能彻底消除结晶缺陷。激光退火则能比较彻底地消除缺陷。半导体激光退火使用的光谱波长范围很宽,从UV (紫外)到IR (红外)波段的激光器都有。工作方式也多种多样,如美国专利US6336308和US7365285中所公开的单脉冲激光退火,高频率Q开关脉冲激光退火,连接波激光扫描退火,同波长双激光扫描退火,不同波长双激光扫描退火等。
如文献Silicon laser annealing by a two-pulse laser system withvariable pulse offsets, V.Gonfa,etc,Laser Annealing of double implantedlayers for igbt power devices, Clement Sabatier,etc以及文献UL Dual beam laserspike annealing technology都有提到双激光退火的激活效果比单激光退火好。如上文所示,双激光有两种,一种是同一波长的两个脉冲不同时间辐射到硅平面(如文献Siliconlaser annealing by a two-pulse laser system with variable pulse offsets,V.Gonfa,etc以及文献Laser Annealing of double implanted layers for igbt powerdevices, Clement Sabatier,etc中公开的内容所示),另外一种是采用长波的连续激光或脉冲激光进行预热,然后再用短波进一步退火(如文献UL Dual beam laser spikeannealing technology所示)。 目前双激光方式的激光退火装置已经在行业中开始应用于IGBT、TFT等领域。
现有技术中Liquid Phase Reflectivtity under Conditions of LaserInduced Silicon Melting中所介绍:激光退火过程中,当硅表面融熔后,表面液态硅是原来固态硅的反射率的2倍,此时激光脉冲的激光能量被大量反射出去,而不被硅吸收,降低了激光能量利用率,影响了退火效果。
该影响对单激光退火或双激光退火都存在。如果拉长双脉冲激光的延时,则有的时间温度过低,达不到退火要求(比如高于1300度的时间大于50ns)。在很多应用中,不一定需要达到熔点1414度附近即可达到退火效果(如现有技术中的文献Sub-Melt LaserAnnealing Followed by Low-Temperature RTP for Minimized Diffusion,S. B.Felch, D. E Downey, and E. A. Arevalo Varian Semiconductor EquipmentAssociates, Inc. 81 1 Hansen Way, Palo Alto, CA 94303-0750 USA所示),比如太阳能退火 (如现有技术中的文献PULSED LASER ANNEALING AND RAPID THERMAL ANNEALINGOF COPPER-INDIUM-GALLIUM-DISELENIDE-BASED THIN-FILM SOLAR CELLS所示)。
无论是单脉冲激光还是双脉冲激光,当温度超过熔点,吸收率减半,降低了能量利用率。此外,以上两种方案都有可能引起温度超过激活退火所需温度(比如1100度,激活效率90%以上)的时间较短(比如小于100ns),从而影响了退火效果。如何提高能量利用率,并改善退火效果,成为激光退火中需要改进的重要问题。
有鉴于此,本发明提出一种激光退火装置,能将单脉冲激光按延时需要和能量比例分解为若干份激光脉冲,在这些激光脉冲的连续辐照下,能使得退火期间硅片表面温度能更长时间保持在熔点附近或所需退火温度附近,从而提高了激光能量利用率,进而改善退火效果。
发明内容
为了克服现有技术中存在的缺陷,本发明提供一种新的激光退火装置,能将单脉冲激光按延时需要和能量比例分解为若干份激光脉冲。
为了实现上述发明目的,本发明公开一种激光退火装置,包括:一激光光束发生模块,用
于提供一稳定的单脉冲激光;一循环延时装置,用于将该单脉冲激光分解为若干子脉冲激光;一光学模块,用于将该子脉冲激光汇聚至一基底上;一运动台,用于为该基底提供至少一个自由度的位移。
更进一步地,该循环延时装置至少包括一延时器、一分光镜组以及一内部控制模块,所述内部控制模块用于控制延时器的延时以及分光镜组的分光比例。该循环延时装置还包括若干光纤,用于在该分光镜组与该延时器之间传递激光。该延时器包括镜面平行的两面反射镜,以及角度或位置可调节的出射端和接收端。该出射端和接收端分别为一出射头端和一接收头,或者一出射反射镜和一接收反射镜。该内部控制模块用于调节所述出射端和接收端的角度或位置,以控制所述延时器的延时。该分光镜组包括若干个透射率不同的分光镜以及一转轴,所述内部控制模块驱动所述转轴改变所选用的分光镜,以控制所述分光镜组的分光比例。该若干分光镜到该转轴的距离相等。还包括一主控制器,与所述内部控制器连接,用于发送延时指令及分光比例指令给所述内部控制器。
本发明同时公开一种激光退火方法,包括:提供一稳定的单脉冲激光,使该单脉冲激光按延时需要和能量比例分解为若干份子激光脉冲,利用该子激光脉冲连续辐照该基底,使所示基底的表面温度稳定于一预定范围内。
更进一步地,该使该单脉冲激光按延时需要和能量比例分解为若干份子激光脉冲具体包括:a)根据一设定的分光比例选择一分光镜;b)将所述单脉冲激光分经过所述分光镜后被分为两束,其中一束直接用于辐照所述基底,另一束进入一延时器延时后出射;c)所述延时器的出射光束再次经过所述分光镜被分为两束,其中一束用于辐照所述基底,另一束再次进入所述延时器延时后出射;d)重复步骤b、c或重复步骤a、b、c。
更进一步地,该延时器包括镜面平行的两面反射镜,以及角度或位置可调节的出射端和接收端。调节所述出射端及接收端的角度或位置可调节所述延时器的延时时间。该出射端和接收端分别为一出射头端和一接收头,或者一出射反射镜和一接收反射镜。
与现有技术相比较,本发明所公开的激光退火装置,能将单脉冲激光按延时需要和能量比例分解为若干份激光脉冲,在这些激光脉冲的连续辐照下,能使得退火期间硅片表面温度能更长时间保持在熔点附近或所需退火温度附近,从而提高了激光能量利用率,进而改善退火效果。
附图说明
关于本发明的优点与精神可以通过以下的发明详述及所附图式得到进一步的了解。
图1是本发明所涉及的激光退火装置的整体结构示意图;
图2是本发明所涉及的激光退火装置的循环延时装置的第一实施方式的结构示意图;
图3是本发明所涉及的激光退火装置的循环延时装置的第二实施方式的结构示意图;
图4是本发明所涉及的循环延时装置的分光镜组结构示意图;
图5是本发明所涉及的循环延时装置内脉冲光强示意图;
图6是本发明所涉及的循环延时装置内脉冲光强的能量分布示意图;
图7是本发明所涉及的基底表面接收的退火激光脉冲相对光强示意图;
图8是本发明所涉及的基底表面温度示意图。
具体实施方式
下面结合附图详细说明本发明的具体实施例。
本发明提出一种激光退火装置,能将单脉冲激光按延时需要和能量比例分解为若干份激光脉冲,在这些激光脉冲的连续辐照下,能使得退火期间硅片表面温度能更长时间保持在熔点附近或所需退火温度附近,从而提高了激光能量利用率,进而改善退火效果。
如图1中所示,图1是本发明所涉及的激光退火装置的整体结构示意图。本实施例技术方案包括激光器100、光强调节器101、匀光器203、运动台500、控制器600,还包括了循环延时装置300,其中循环延时装置300用于将激光的单个脉冲分解为若干子脉冲。于本实施例中,控制器600为主控制器,用于发出延时指令及分光比例指令,循坏装置300内部的控制器根据主控制器发出的指令控制循环延时装置发出的若干子脉冲之间的延时以及循环延时装置的分光比例(即能量比例)。
如图1中所示,图1中所示出的激光退火装置整体结构还包括对激光器100的出射激光进行调整的光学装置和控制装置,如激光器100的出射激光经过一光强调节器101,经过光强调节器101调节后的激光光束经过一分光镜102后激光光束的大部分进入循环延时装置300,另一部分进入一能量探测器105。能量探测器105探测此时激光能量,并将探测结果输入至一激光器控制器104。与此同时,一环境控制单元103探测此时激光器100的工作环境,如温度,并将此时探测结果一并返回至激光器控制器104。激光器控制器104根据环境控制单元103和能量探测器105的输出结果控制激光器100工作。
循环延时装置300具体包括延时器301、分光镜组302、内部控制器、若干光纤,其中延时器301可根据需要调整脉冲的延时时间,而分光镜组302可调整分光比例。经过分光镜组302输入的激光光束由原来的单个脉冲被分解为若干子脉冲。若干子脉冲经过一扩束器206后进入一匀光器203。子脉冲从匀光器203出射后再次经过一分光镜207后一部分子脉冲进入焦面探测器201,另一部分经过一聚焦镜组202后汇聚在基底204上。
基底204即待退火的半导体或其他材料,基底204被放置于一运动台500上。该运动台500可以沿若干个自由度运动。
如图2为本实施例循环延时装置的第一种实施方式的结构示意图。该结构包括延时器301、分光镜组302、内部控制器307、若干光纤310。
其中如图2中所示,延时器301包括两面反射镜304、305、出射头306、接收头303。反射镜304和反射镜305镜面平行放置。出射头306的角度可调整,接收头303的位置可调整,且调整的角度由内部控制器307所控制。若出射头306的光出射角度为θ,两面反射镜304、305距离为L,高度为H, 延时器以外循环延时装置中的光程为L0,则光束每在循环延时装置中循环一周的光程为X=n*L0+mod(H/(L*tg(θ))) *L*sec(θ)……公式一
其中mod函数在此表示取整,若为偶数则再加1,n表示光纤介质的折射率,那么光束每在循环延时装置中循环一周的延时为T=X/c……公式二
通过这样的关系,当内部控制器307接到控制器600发出的需要延时T的指令时候,可通过公式一与公式二计算出出射角度θ, 在内部控制器307的控制下调整出射头306的角度出射光线,并调整接收头到离出口反射镜外最近接收位置接收反射光线。
图3是本发明所涉及的激光退火装置的循环延时装置的第二实施方式的结构示意图,该延时器301包括两面主反射镜304与305、出射反射镜309、接收反射镜308。出射反射镜308、接收反射镜309的位置可调整,和图2所示的例子类似,本例子也实现光程可调,从而可以调整延时时间。
如图4为本发明所涉及的循环延时装置的分光镜组结构示意图。其中图4(a)为该分光镜组的主视图,图4(b)为该分光镜组的侧视图。本实施例中分光镜组有四个分光镜3021、3022、3023、3024,四个分光镜3021、3022、3023、3024透过率依次为a1,a2,a3,a4。内部控制器307接收到控制器600发出的分光比例指令后,控制该分光镜组302的转轴3025转动来改变所选用的分光镜,设所选的分光镜的透光率为a。选择不同的分光镜可以获得不同的透光率。
图5是本发明所涉及的循环延时装置内脉冲光强示意图,如图5中所示。分光镜302按设定分光比例a将激光出射光束(光束0)分为两束,其中一束(光束1)直接通往循环延时装置外部,而另外一束(光束2)导入到延时器中按给定设置(T)延时后,通过光纤重新将光束2导到所选分光镜上。
光束2被分光镜按设定比例分为两束,其中一束(光束3)直接通往匀光器,而另外一束(光束4)导入到延时器中按给定设置延时后,通过光纤重新将光束4导到分光镜上。
光束4被分光镜分为两束,其中一束(光束5)直接通往匀光器,而另外一束(光束6)导入到延时器中按给定设置延时后,通过光纤重新将光束6导到分光镜上。
如此反复,光束0,1,2,3,4,5,6,... ,2n-1,2n的能量相对值依次为:
1,a, 1-a, a(1-a),(1-a)^2, a(1-a)^2, (1-a)^3,...,a(1-a)^(n-1), (1-a)^n。
实际达到匀光器的光束为1,3,5,... ,2n-1等奇数次编号的激光,能量相对值依次为:
a, a(1-a), a(1-a)^2, ..., a(1-a)^(n-1),
1,3,5,... ,2n-1等奇数次编号脉冲的各自延时为T,本实施例中T=200ns。 而出射激光脉冲的频率为f, 且1/f>>T, 本实施例中f=1kHz。
匀光器依次将这1,3,5,... ,2n-1等奇数次编号的n个激光脉冲沿着非扫描方向匀光后依次辐照在工件台的基底上,本实施例中为硅片。
在本实施例中a=30%, 则到达匀光器的n束光的能量依次为:
0.3,0.21,0.147,0.1029,0.07203,0.050421,...,0.3*0.7^(2*n-1) ,...。
所得的脉冲能量示意如表1和图6中所示。其中表1是循环延时装置中光束相对光强示意图,图6是是本发明所涉及的循环延时装置内脉冲光强的能量分布示意图。激光器100所发出的激光脉冲经过了循环延时装置300,被分解为若干能量指数型降低的脉冲,如图7中所示,图7是本发明所涉及的基底表面接收的退火激光脉冲相对光强示意图。本实施例中,本实施例循环延时装置300, 其中两个主反射镜高度1m,距离1m, 调整角度为0.95度,光程则调整为60m, 则被分解的脉冲延时为200ns。本实施例中f=1kHz,则激光器出射脉冲的时间间隔为1ms。
从循环延时装置中出射光的编号n | 光束内部编号(分光镜透射光) | 相对光强(分光镜透射光) | 光束内部编号(分光镜反射光) | 相对光强(分光镜反射光) |
1 | 1 | 0.3 | 2 | 0.7 |
2 | 3 | 0.21 | 4 | 0.49 |
3 | 5 | 0.147 | 6 | 0.343 |
4 | 7 | 0.1029 | 8 | 0.2401 |
5 | 9 | 0.07203 | 10 | 0.16807 |
6 | 11 | 0.050421 | 12 | 0.117649 |
7 | 13 | 0.0352947 | 14 | 0.082354 |
8 | 15 | 0.0247063 | 16 | 0.057648 |
9 | 17 | 0.0172944 | 18 | 0.040354 |
10 | 19 | 0.0121061 | 20 | 0.028248 |
11 | 21 | 0.0084743 | 22 | 0.019773 |
12 | 23 | 0.005932 | 24 | 0.013841 |
13 | 25 | 0.0041524 | 26 | 0.009689 |
14 | 27 | 0.0029067 | 28 | 0.006782 |
15 | 29 | 0.0020347 | 30 | 0.004748 |
表一
如现有技术中的Laser Annealing of double implanted layers for igbtpower devices, Clement Sabatier,etc.所公开内容可知,双脉冲取代单脉冲,能量被离散化后,退火效果更好,而本发明能够将单脉冲离散化为多个脉冲而不增加激光器,得到的退火效果比双脉冲的效果更佳,而成本较低。此外本方法也和调整脉冲时间宽度的方法不一样。调整脉冲时间宽度的方法,在一定的时间后,基底温度超过熔点,能量被强烈反射,并且不断升高温度有热辐射,基底离子挥发等影响。而采用本发明可调整分光比例a和延时时间T,摸索出很好的工艺,使得基底表面温度在熔点附近达到比较久的时间,如图8所示,从而提高能量利用率,并改善退火效果。
本说明书中所述的只是本发明的较佳具体实施例,以上实施例仅用以说明本发明的技术方案而非对本发明的限制。凡本领域技术人员依本发明的构思通过逻辑分析、推理或者有限的实验可以得到的技术方案,皆应在本发明的范围之内。
Claims (12)
1.一种激光退火装置,其特征在于,包括:
一激光光束发生模块,用于提供一稳定的单脉冲激光;
一循环延时装置,用于将所述单脉冲激光分解为若干子脉冲激光,所述循环延时装置包括一延时器、一分光镜组以及一内部控制模块,所述内部控制模块用于控制所述延时器的延时以及所述分光镜组的分光比例;
一光学模块,用于将所述子脉冲激光汇聚至一基底上;
一运动台,用于为所述基底提供至少一个自由度的位移。
2.如权利要求1所述的激光退火装置,其特征在于,所述循环延时装置还包括若干光纤,用于在所述分光镜组与所述延时器之间传递激光。
3.如权利要求1所述的激光退火装置,其特征在于,所述延时器包括镜面平行的两面反射镜,以及角度或位置可调节的出射端和接收端。
4.如权利要求3所述的激光退火装置,其特征在于,所述出射端和接收端分别为一出射头端和一接收头,或者一出射反射镜和一接收反射镜。
5.如权利要求3所述的激光退火装置,其特征在于,所述内部控制模块用于调节所述出射端和接收端的角度或位置,以控制所述延时器的延时。
6.如权利要求1所述的激光退火装置,其特征在于,所述分光镜组包括若干个透射率不同的分光镜以及一转轴,所述内部控制模块驱动所述转轴改变所选用的分光镜,以控制所述分光镜组的分光比例。
7.如权利要求6所述的激光退火装置,其特征在于,所述若干分光镜到所述转轴的距离相等。
8.如权利要求1所述的激光退火装置,其特征在于还包括一主控制器,与所述内部控制模块连接,用于发送延时指令及分光比例指令给所述内部控制模块。
9.一种激光退火方法,包括,提供一稳定的单脉冲激光,使所述单脉冲激光按延时需要和能量比例分解为若干份子激光脉冲,利用所述子激光脉冲连续辐照基底,使所述基底的表面温度稳定于一预定范围内,其特征在于,所述单脉冲激光按延时需要和能量比例分解为若干份子激光脉冲具体包括:
a)根据一设定的分光比例选择一分光镜;
b)所述单脉冲激光经过所述分光镜后被分为两束,其中一束直接用于辐照所述基底,另一束进入一延时器延时后出射;
c)所述延时器的出射光束再次经过所述分光镜被分为两束,其中一束用于辐照所述基底,另一束再次进入所述延时器延时后出射;
d)重复步骤c或进行步骤a后重复步骤c。
10.如权利要求9所述的激光退火方法,其特征在于,所述延时器包括镜面平行的两面反射镜,以及角度或位置可调节的出射端和接收端。
11.如权利要求10所述的激光退火方法,其特征在于,调节所述出射端及接收端的角度或位置可调节所述延时器的延时时间。
12.如权利要求10所述的激光退火方法,其特征在于,所述出射端和接收端分别为一出射头端和一接收头,或者一出射反射镜和一接收反射镜。
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CN103578943A (zh) | 2014-02-12 |
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TWI600085B (zh) | 2017-09-21 |
JP6006864B2 (ja) | 2016-10-12 |
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TW201413823A (zh) | 2014-04-01 |
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