SG11201405564XA - Laser annealing apparatus and laser annealing method - Google Patents

Laser annealing apparatus and laser annealing method

Info

Publication number
SG11201405564XA
SG11201405564XA SG11201405564XA SG11201405564XA SG11201405564XA SG 11201405564X A SG11201405564X A SG 11201405564XA SG 11201405564X A SG11201405564X A SG 11201405564XA SG 11201405564X A SG11201405564X A SG 11201405564XA SG 11201405564X A SG11201405564X A SG 11201405564XA
Authority
SG
Singapore
Prior art keywords
laser annealing
annealing method
annealing apparatus
laser
annealing
Prior art date
Application number
SG11201405564XA
Inventor
Jun Zhang
Zhidan Li
Zhe Li
Original Assignee
Shanghai Microelectronics Equi
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shanghai Microelectronics Equi filed Critical Shanghai Microelectronics Equi
Publication of SG11201405564XA publication Critical patent/SG11201405564XA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/0006—Working by laser beam, e.g. welding, cutting or boring taking account of the properties of the material involved
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
    • B23K26/0622—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
    • B23K26/0648—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms comprising lenses
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/067—Dividing the beam into multiple beams, e.g. multifocusing
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/08—Devices involving relative movement between laser beam and workpiece
    • B23K26/083—Devices involving movement of the workpiece in at least one axial direction
    • B23K26/0853—Devices involving movement of the workpiece in at least in two axial directions, e.g. in a plane
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/352—Working by laser beam, e.g. welding, cutting or boring for surface treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/0007—Applications not otherwise provided for
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00—Articles made by soldering, welding or cutting
    • B23K2101/36—Electric or electronic devices
    • B23K2101/40—Semiconductor devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
    • B23K2103/56—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26 semiconducting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/005—Optical devices external to the laser cavity, specially adapted for lasers, e.g. for homogenisation of the beam or for manipulating laser pulses, e.g. pulse shaping

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Electromagnetism (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Combustion & Propulsion (AREA)
  • Chemical & Material Sciences (AREA)
  • Recrystallisation Techniques (AREA)
  • Lasers (AREA)
SG11201405564XA 2012-07-25 2013-07-19 Laser annealing apparatus and laser annealing method SG11201405564XA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201210258008.9A CN103578943B (en) 2012-07-25 2012-07-25 A kind of laser anneal device and laser anneal method
PCT/CN2013/079697 WO2014015765A1 (en) 2012-07-25 2013-07-19 Laser annealing apparatus and laser annealing method

Publications (1)

Publication Number Publication Date
SG11201405564XA true SG11201405564XA (en) 2014-10-30

Family

ID=49996582

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201405564XA SG11201405564XA (en) 2012-07-25 2013-07-19 Laser annealing apparatus and laser annealing method

Country Status (7)

Country Link
US (1) US9455164B2 (en)
JP (1) JP6006864B2 (en)
KR (1) KR101660440B1 (en)
CN (1) CN103578943B (en)
SG (1) SG11201405564XA (en)
TW (1) TWI600085B (en)
WO (1) WO2014015765A1 (en)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9498845B2 (en) 2007-11-08 2016-11-22 Applied Materials, Inc. Pulse train annealing method and apparatus
JP6270820B2 (en) * 2013-03-27 2018-01-31 国立大学法人九州大学 Laser annealing equipment
JP6320799B2 (en) * 2014-03-07 2018-05-09 住友重機械工業株式会社 Manufacturing method of semiconductor device
CN105448681B (en) * 2014-07-04 2018-11-09 上海微电子装备（集团）股份有限公司 Laser anneal device
CN107578991A (en) * 2014-07-21 2018-01-12 应用材料公司 Scanning impulse annealing device and method
CN106935491B (en) * 2015-12-30 2021-10-12 上海微电子装备（集团）股份有限公司 Laser annealing device and annealing method thereof
JP6585279B2 (en) * 2016-03-09 2019-10-02 三菱電機株式会社 Heat treatment apparatus, heat treatment method, laser annealing apparatus, and laser annealing method
JP6484272B2 (en) * 2017-03-17 2019-03-13 株式会社フジクラ Laser processing apparatus and laser processing method
CN107275185A (en) * 2017-04-24 2017-10-20 昆山国显光电有限公司 Laser anneal device and its annealing process
JP6957099B2 (en) * 2017-09-05 2021-11-02 住友重機械工業株式会社 Laser annealing device and sheet resistance calculation device
US11929334B2 (en) * 2020-03-17 2024-03-12 STATS ChipPAC Pte. Ltd. Die-beam alignment for laser-assisted bonding
US11909091B2 (en) 2020-05-19 2024-02-20 Kymeta Corporation Expansion compensation structure for an antenna
CN111952158B (en) * 2020-08-17 2022-08-30 北京中科镭特电子有限公司 Laser annealing device and annealing method
CN111952160B (en) * 2020-08-17 2024-06-11 北京中科镭特电子有限公司 Laser annealing device
US11766874B2 (en) * 2021-11-19 2023-09-26 Xerox Corporation Matrix addressable, line laser, marking system using laser additives
JP2023128986A (en) * 2022-03-04 2023-09-14 株式会社ディスコ Laser reflow method
CN115246036A (en) * 2022-08-11 2022-10-28 沈阳航远航空技术有限公司 Double-beam laser auxiliary stamping method and device for brittle or high-strength material
CN115890021B (en) * 2023-01-05 2023-05-16 成都功成半导体有限公司 Wafer laser cutting method and wafer
CN118073183B (en) * 2024-04-25 2024-06-18 苏州中瑞宏芯半导体有限公司 High-temperature gate oxide annealing process for silicon carbide wafer

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0529693A (en) * 1990-09-19 1993-02-05 Hitachi Ltd Multipulse laser generator, method therefor and processing method using multipulse laser
TW207588B (en) * 1990-09-19 1993-06-11 Hitachi Seisakusyo Kk
JPH07159706A (en) * 1993-12-08 1995-06-23 Hitachi Cable Ltd Variable optical branching device
JP2000244036A (en) * 1999-02-17 2000-09-08 Toyota Central Res & Dev Lab Inc Laser pulse generator
US6955956B2 (en) * 2000-12-26 2005-10-18 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device
TWI239936B (en) * 2004-02-27 2005-09-21 Au Optronics Corp Laser annealing apparatus and laser annealing method
JP2005294801A (en) * 2004-03-11 2005-10-20 Advanced Lcd Technologies Development Center Co Ltd Laser crystallization apparatus and laser crystallization method
US8383982B2 (en) * 2004-06-18 2013-02-26 Electro Scientific Industries, Inc. Methods and systems for semiconductor structure processing using multiple laser beam spots
JP2006134986A (en) * 2004-11-04 2006-05-25 Sony Corp Laser treatment equipment
JP2006135251A (en) * 2004-11-09 2006-05-25 Hitachi Ltd Laser crystallization equipment
JP5060733B2 (en) * 2005-03-28 2012-10-31 オリンパス株式会社 Optical pulse multiplexing unit, optical pulse generator using the same, and optical pulse multiplexing method
CN100470248C (en) 2006-07-04 2009-03-18 中国工程物理研究院流体物理研究所 Optical delay etalon and test light path
CN100585967C (en) 2008-09-10 2010-01-27 哈尔滨工业大学 Based on accurate vertical zeeman laser frequency-stabilizing method and the device that separates of luminous power
JP4863407B2 (en) * 2009-02-02 2012-01-25 株式会社日本製鋼所 Laser annealing method for semiconductor film
JP2011171551A (en) * 2010-02-19 2011-09-01 Toyota Motor Corp Method of manufacturing semiconductor device
US8538218B2 (en) * 2010-03-10 2013-09-17 Corning Incorporated Unrepeatered long haul optical fiber transmission systems
JP5590925B2 (en) * 2010-03-10 2014-09-17 住友重機械工業株式会社 Semiconductor device manufacturing method and laser annealing apparatus
JP2012015463A (en) * 2010-07-05 2012-01-19 V Technology Co Ltd Yag laser annealing device and annealing method by yag laser light

Also Published As

Publication number Publication date
WO2014015765A1 (en) 2014-01-30
KR20150014515A (en) 2015-02-06
TWI600085B (en) 2017-09-21
TW201413823A (en) 2014-04-01
JP6006864B2 (en) 2016-10-12
KR101660440B1 (en) 2016-09-27
CN103578943B (en) 2017-05-31
US20150037984A1 (en) 2015-02-05
CN103578943A (en) 2014-02-12
US9455164B2 (en) 2016-09-27
JP2015520507A (en) 2015-07-16

Similar Documents

Publication Publication Date Title
SG11201405564XA (en) Laser annealing apparatus and laser annealing method
EP2674967A4 (en) Laser annealing method and laser annealing apparatus
GB201215481D0 (en) Apparatus and method
GB201205986D0 (en) Apparatus and method
GB201220323D0 (en) Apparatus and method
EP2924820A4 (en) Laser machining apparatus and laser machining method
EP2880774A4 (en) Method and apparatus
GB201217618D0 (en) Apparatus and method
GB201212090D0 (en) Method and apparatus
GB201210929D0 (en) Apparatus and method
GB2499594B (en) Laser welding method and apparatus
GB201212045D0 (en) Apparatus and method
SG11201503917UA (en) Laser annealing method and laser annealing apparatus
GB201210361D0 (en) Apparatus and method
SG11201503919QA (en) Laser processing method and laser processing apparatus
EP2839527A4 (en) Apparatus and method
GB201319298D0 (en) Apparatus and method
GB201215752D0 (en) Apparatus and method
GB201211205D0 (en) Apparatus and method
GB201204726D0 (en) Method and apparatus
GB201204727D0 (en) Method and apparatus
EP2813119A4 (en) Method and apparatus
ZA201309457B (en) Annealing apparatus and method
GB201421234D0 (en) Apparatus and method
GB201301087D0 (en) Apparatus and method