CN107275185A - Laser anneal device and its annealing process - Google Patents
Laser anneal device and its annealing process Download PDFInfo
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- CN107275185A CN107275185A CN201710271580.1A CN201710271580A CN107275185A CN 107275185 A CN107275185 A CN 107275185A CN 201710271580 A CN201710271580 A CN 201710271580A CN 107275185 A CN107275185 A CN 107275185A
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- laser
- amorphous silicon
- silicon membrane
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- thickness
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
- H01L21/2686—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation using incoherent radiation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
- H01L21/02345—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to radiation, e.g. visible light
- H01L21/02354—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to radiation, e.g. visible light using a coherent radiation, e.g. a laser
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
Abstract
The present invention relates to technical field of semiconductors, described laser anneal device, the thickness of amorphous silicon membrane is measured using sensor, the data that first controller is obtained according to sensor generate control information, feed back to laser control apparatus, laser beam to after the amorphous silicon membrane emission parameter optimization of substrate surface, makes amorphous silicon membrane crystallization turn to the homogeneous polysilicon membrane of performance.Present invention also offers a kind of laser annealing technique, control loop is short, and crystalline rate is high, can realize high efficiency production.
Description
Technical field
The present invention relates to technical field of semiconductors, and in particular to a kind of laser anneal device and its annealing process.
Background technology
(English full name is Polycrystalline Silicon Thin Film to polycrystalline SiTFT
Transistor, referred to as p-Si TFT) there is important application in Active Matrix LCD At technology.Especially to organic light emitting display
For equipment (English full name is Organic Light-Emitting Display, referred to as OLED), because OLED is electric current
The p-Si TFT of type device, only high mobility could fully meet the high current required for it.Although the non-crystalline silicon of high-quality
Thin film transistor (TFT) (English full name is Amorphous Silicon Thin Film Transistor, referred to as a-Si TFT)
OLED can be driven and have the advantages that uniformity is high, it is low to prepare cost, but its threshold drift phenomenon having hardly results in root
This solution.Therefore, p-Si films are even more important for TFT display.
Laser annealing crystallization is to inspire laser beam by excimer laser, and the high-energy that laser beam is produced incides amorphous
Silicon film surface, only produces heat energy effect, so that a-Si is converted into p-Si on film top layer.Due to laser optical path control very
Complicated and sensitive, any small change all can produce influence to the effect of crystallization, and such as laser camera lens is by Organic Pollution
Cause energy uneven, or a-Si uneven film thicknesses etc., it can influence TFT characteristic and produce optical speckle (Mura).
To solve the above problems, in production practices, being typically adjusted optimization to laser by experienced person, constantly
Ground carries out the optimization of parameter to tackle the minor variations of different environment or technique.However, this mode not only poor repeatability, take
When it is laborious, it is irreversible process to be additionally, since laser crystallization, also results in the waste of resource.
The content of the invention
Therefore, the technical problem to be solved in the present invention is to overcome non-crystalline silicon film forming inequality in existing laser anneal device
Defect.
In order to solve the above technical problems, the technical solution adopted by the present invention is as follows：
The one side of the embodiment of the present invention there is provided a kind of laser anneal device, including：
Laser control apparatus, for launching laser beam to the amorphous silicon membrane of substrate surface, crystallizes amorphous silicon membrane
For polysilicon membrane；
Sensor, the thickness for measuring the amorphous silicon membrane；
First controller, the data for being obtained according to the sensor generate control information, feed back to the laser control
Device processed, to adjust the parameter of the laser control apparatus.
Alternatively, the laser control apparatus includes：
LASER Light Source；
Mechanical arm, position and angle for adjusting the LASER Light Source；
Second controller, the control information generated according to first controller controls the action of the mechanical arm
With the LASER Light Source parameter.
Alternatively, the sensor includes：
Measurement end, the thickness for measuring the amorphous silicon membrane；
Output end, is electrically connected with first controller, the information for transmitting the measurement end collection.
Alternatively, first controller includes：
Data storage cell, the corresponding technological parameter of different-thickness and the biography for storing the amorphous silicon membrane
The data of sensor collection；
Data processing unit, data and the technological parameter for the sensor to be gathered are compared, and generate institute
State control information.
Alternatively, the laser anneal device also includes bogey, the bogey and first controller
Electrical connection, for carrying the substrate.
Alternatively, the LASER Light Source is quasi-molecule laser source.
The another aspect of the embodiment of the present invention, additionally provides a kind of laser annealing technique, comprises the following steps：
Sensor measures the thickness of amorphous silicon membrane；
First controller generates control information according to thickness information and feeds back to laser control apparatus；
Adjust the parameter of the laser control apparatus；
Laser control apparatus launches laser beam to the amorphous silicon membrane, the amorphous silicon membrane crystallization is turned to polysilicon
Film.
Alternatively, the step of generation control information includes：
Form the corresponding technological parameter of different-thickness of amorphous silicon membrane；
The data that the sensor is gathered are compared with the technological parameter.
Alternatively, the step of forming the technological parameter includes：
Measure the thickness of amorphous silicon membrane；
Launch the laser beam to the amorphous silicon membrane with different parameters respectively, obtain polysilicon membrane；
Performance test is carried out to the polysilicon membrane.
The above-mentioned technical proposal of the present invention has advantages below compared with prior art：
1st, laser anneal device provided in an embodiment of the present invention, the thickness of amorphous silicon membrane, first are measured using sensor
The data that controller is obtained according to sensor generate control information, laser control apparatus are fed back to, to the non-crystalline silicon of substrate surface
Laser beam after the optimization of film emission parameter, makes amorphous silicon membrane crystallization turn to the homogeneous polysilicon membrane of performance.The sensing
Device measures the thickness of amorphous silicon membrane in real time, and the technique that the data that the first controller is obtained according to sensor are prestored with it is joined
Number is compared, and according to comparison result feedback control information to laser control apparatus, laser control apparatus can be adjusted in real time
Parameter so that the corresponding different parameter of the thickness of different amorphous silicon membranes, reaches the homogeneity of crystallization effect.
2nd, laser anneal device provided in an embodiment of the present invention, the laser annealing technique can monitor substrate non-crystalline silicon in real time
The thickness of film, and adjusted in real time between the energy of laser and depth and laser control apparatus and substrate according to different thickness
Vertical range and laser beam irradiate the angle of substrate, it is ensured that the different technological parameters of different thickness correspondences, it is ensured that whole face
Homogeneity after the crystallization of substrate.
3rd, the laser annealing technique that inventive embodiments are provided, control loop is short, and crystalline rate is high, can realize that high efficiency is given birth to
Production.
Brief description of the drawings
, below will be to specific in order to illustrate more clearly of the specific embodiment of the invention or technical scheme of the prior art
The accompanying drawing used required in embodiment or description of the prior art is briefly described, it should be apparent that, in describing below
Accompanying drawing is some embodiments of the present invention, for those of ordinary skill in the art, before creative work is not paid
Put, other accompanying drawings can also be obtained according to these accompanying drawings.
Fig. 1 shows the structural representation of laser anneal device；
Fig. 2 shows the flow chart of laser annealing technique；
Fig. 3 shows the structural representation of measurement amorphous silicon membrane thickness；
Fig. 4 shows the reflected light path figure of light on the amorphous silicon thin film；
Reference：10- substrates, 11- amorphous silicon membranes, 12- polysilicon membranes, 20- laser control apparatus, 21- laser
Light source, 22- mechanical arms, 23- second controllers, 31- sensors measurement end, 32- sensor outputs, 311- light source generators,
312- photoelectric detection systems, the controllers of 40- first, 41- data storage cells, 42- data processing units, 50- bogeys,
51- drive devices, 52- rollers.
Embodiment
Technical scheme is clearly and completely described below in conjunction with accompanying drawing, it is clear that described implementation
Example is a part of embodiment of the invention, rather than whole embodiments.Based on the embodiment in the present invention, ordinary skill
The every other embodiment that personnel are obtained under the premise of creative work is not made, belongs to the scope of protection of the invention.
As long as in addition, technical characteristic involved in invention described below different embodiments non-structure each other
It can just be combined with each other into conflict.
Embodiment
This implementation provides a kind of laser anneal device, and such as Fig. 1 includes bogey 50, substrate 10, laser control shown in showing
Device 20 processed, the first controller 40 and sensor.
Bogey 50 is electrically connected with the first controller 40, includes drive device 51 and roller 52.Substrate 10 is placed
On bogey surface, roller 52 is under the driving of drive device 51 along X arrow directions in Fig. 1, its speed moved
Depending on the efficiency of the distance between sensor and LASER Light Source 21, and controller processing data.The bogey of the present invention
This is not limited to, all devices that can realize bearing substrate in the present invention belong to protection scope of the present invention.First control
Device 40 adjusts the movement velocity of substrate 10 according to the position of sensor and the speed of controller processing data, it is ensured that LASER Light Source
The part of irradiation amorphous silicon membrane is the part that sensor is measured in real time in real time, to reach the homogeneity of polysilicon crystal.
Sensor includes measurement end 31 and output end 32, and measurement end 31 is used for the thickness for measuring amorphous silicon membrane on substrate 10
Degree, output end 32 electrically connects with the first controller 40, for the information transmission that gathers measurement end to the first controller 40.
As a kind of optional mode of the embodiment of the present invention, as shown in figure 3, measuring amorphous silicon membrane using spectrometry
Thickness, be changed into this property of elliptically polarized light after reflecting through amorphous silicon membrane using linearly polarized light to obtain amorphous silicon membrane
Optical constant.Sensor measurement end 31 uses ellipsometer test, including light source generator 311 and photoelectric detection system 312,
As shown in figure 4, light source generator 311 emits beam with angle, θ1The surface of amorphous silicon membrane 11 is irradiated to, some light is with angle, θ2
Reflection, is received, some light is with angle, θ by photoelectric detection system 3123Refraction.Sensor measurement end 31 is by the non-crystalline silicon of collection
The optical constant of film passes to the first controller 40 through output end 32.
First controller 40 is electrically connected between sensor and laser control apparatus 20, for the number obtained according to sensor
According to control information is generated after being handled, laser control apparatus 20 is fed back to, to adjust the parameter of laser control apparatus 20.First
Controller 40 includes data storage cell 41 and data processing unit 42, and data storage cell 41 is used to store amorphous silicon membrane
Different-thickness corresponding technological parameter and sensor collection data, data processing unit 42 is used to gather sensor
It is compared after data processing with technological parameter, generates control information.
In the present embodiment, technological parameter is that laser control apparatus 20 is obtained with different parameters to amorphous silicon membrane transmitting laser beam
Obtain after polysilicon membrane, performance test is carried out to polysilicon membrane, the technique corresponding to the amorphous silicon membrane of different-thickness is drawn
Parameter.These technological parameters and the technological parameter that prestores in the data store are compared.Different parameters include
But it is not limited to the distance between LASER Light Source and amorphous silicon membrane, LASER Light Source and irradiates the angle and laser light of amorphous silicon membrane
Different parameters not limited to this in the energy and depth in source, the present invention, it is all related to LASER Light Source, and crystallization can be influenceed
The parameter of effect belongs to the scope of protection of the invention.
Laser control apparatus 20 is electrically connected with data processing unit 42, is swashed for launching to the amorphous silicon membrane on substrate 10
Light beam, make amorphous silicon membrane crystallization turn to polysilicon membrane, include the LASER Light Source 21 being electrically connected to each other, mechanical arm 22 and
Second controller 23.Second controller 23 receives the control information of the transmission of data processing unit 42, dynamic for control machinery arm 22
Make the parameter with LASER Light Source 21.It is vertical with amorphous silicon membrane that mechanical arm 22 adjusts LASER Light Source 21 according to control information in real time
Laser beam and the angle of amorphous silicon membrane that distance and LASER Light Source 21 are launched.Meanwhile, second controller 23 is believed according to control
The energy and depth of breath adjustment LASER Light Source 21, the adjustment adjusted by physical location with the inherent parameters of LASER Light Source 21 reaches many
The homogeneity of crystal silicon crystallization.LASER Light Source 21 is selected from, but not limited to, quasi-molecule laser source, swashs for being provided to amorphous silicon membrane
Light beam, makes amorphous silicon membrane crystallization turn to polysilicon membrane.
As one embodiment of the present of invention, in the present embodiment, laser anneal device is thin using sensor measurement non-crystalline silicon
The thickness of film, the data that the first controller 40 is obtained according to sensor generate control information, feed back to laser control apparatus 20, with
The parameter for adjusting laser control apparatus 20 launches laser beam to the amorphous silicon membrane of substrate surface, turns to amorphous silicon membrane crystallization
Polysilicon membrane.Sensor measures the thickness of amorphous silicon membrane in real time, the data that the first controller 40 is obtained according to sensor with
Its technological parameter prestored is compared, according to comparison result feedback control information to laser control apparatus 20, Neng Goushi
When adjust the parameter of laser control apparatus 20 so that the different parameters of thickness correspondence of different amorphous silicon membranes, reach crystallization
The homogeneity of effect.
The present embodiment additionally provides a kind of laser annealing technique, as shown in Fig. 2 comprising the following steps：
S10：Sensor measures the thickness of amorphous silicon membrane；
S20：First controller generates control information according to thickness information and feeds back to laser control apparatus；
S30：Adjust the parameter of the laser control apparatus；
S40：Laser control apparatus launches laser beam to the amorphous silicon membrane, turns to the amorphous silicon membrane crystallization many
Polycrystal silicon film.
In step slo：The thickness of amorphous silicon membrane is measured using sensor, a kind of optional of the embodiment of the present invention is used as
Mode, as shown in figure 3, the thickness of amorphous silicon membrane is measured using spectrometry, it is anti-through amorphous silicon membrane using linearly polarized light
It is changed into this property of elliptically polarized light after penetrating to obtain the optical constant of amorphous silicon membrane.Sensor measurement end 31 is using oval
Polarimeter, including light source generator 311 and photoelectric detection system 312, as shown in figure 4, light source generator 311 sends laser light
Source is with angle, θ1The surface of amorphous silicon membrane 11 is irradiated to, some light is with angle, θ2Reflection, is received, portion by photoelectric detection system 312
Light splitter is with angle, θ3Refraction.Sensor measurement end 31 passes to the optical constant of the amorphous silicon membrane of collection through output end 32
First controller 40.
In step S20：It is anti-that the data that first controller 40 is measured according to sensor generate control information after treatment
Feed laser control apparatus 20, during whole laser annealing, roller 52 drives carrying under the driving of drive device 51
The substrate 10 of amorphous silicon membrane along X arrow directions in Fig. 1.
The speed that substrate 10 is moved depends on the distance between sensor and LASER Light Source 21, and at the first controller 40
Manage the efficiency of data.First controller 40 adjusts substrate 10 according to the position of sensor and the speed of controller processing data
Movement velocity, it is ensured that the part of LASER Light Source irradiation amorphous silicon membrane is the part that sensor is measured in real time, to reach polysilicon
The homogeneity of crystallization.
In step s 30：The parameter of laser control apparatus 20 is adjusted, second controller 23 receives data processing unit transmission
Control information, for control machinery arm 22 act and LASER Light Source 21 parameter.Mechanical arm 22 is adjusted in real time according to control information
Laser beam and the folder of amorphous silicon membrane that the vertical range and LASER Light Source 21 of whole LASER Light Source 21 and amorphous silicon membrane are launched
Angle.
Meanwhile, second controller 23 adjusts the energy and depth of LASER Light Source 21 according to control information, passes through physical location
Adjustment and the adjustment of the inherent parameters of LASER Light Source 21 reach the homogeneity of polysilicon crystal；
In step s 40：Laser control apparatus 20 launches laser beam to amorphous silicon membrane, turns to amorphous silicon membrane crystallization
Polysilicon membrane.LASER Light Source is selected from, but not limited to, quasi-molecule laser source, for providing laser beam to amorphous silicon membrane, makes non-
Polycrystal silicon film crystallization turns to polysilicon membrane, and the present embodiment is preferably quasi-molecule laser source.
Circulation performs step S10 to S40, until all crystallization is completed the amorphous silicon membrane on substrate 10.
As one embodiment of the present of invention, include in the present embodiment, the step of generation control information：
S21：The corresponding technological parameter of different-thickness of amorphous silicon membrane is formed, technological parameter is stored in advance in data storage
In unit 41；
S22：The data that sensor is gathered are contrasted with technological parameter, generate control information.
As one embodiment of the present of invention, include in the present embodiment, the step of formation process parameter：
S211：Measure and sensor measurement is used in the thickness of amorphous silicon membrane, the present embodiment, but the present invention is not limited to
This, can realize the device or equipment of the purpose of present invention measurement amorphous silicon membrane thickness, belong to the scope of protection of the invention；
S212：Launch laser beam to amorphous silicon membrane with different parameters respectively, obtain polysilicon membrane；
S213：Performance test is carried out to polysilicon membrane, chooses and causes polysilicon membrane crystallizes homogeneous parameter to be work
Skill parameter.
According to embodiments of the present invention, laser annealing technique can monitor the thickness of amorphous silicon membrane on substrate 10, and root in real time
Carried out according to different thickness vertical between the energy and depth and laser control apparatus 20 and substrate 10 of adjustment laser in real time
Distance and laser beam irradiate the angle of substrate, it is ensured that the different technological parameter of different thickness correspondences, it is ensured that whole face substrate 10
The thick homogeneity of crystallization.
Obviously, above-described embodiment is only intended to clearly illustrate example, and the not restriction to embodiment.It is right
For those of ordinary skill in the art, can also make on the basis of the above description it is other it is various forms of change or
Change.There is no necessity and possibility to exhaust all the enbodiments.And the obvious change thus extended out or
Among changing still in the protection domain of the invention.
Claims (9)
1. a kind of laser anneal device, it is characterised in that including：
Laser control apparatus, for launching laser beam to the amorphous silicon membrane of substrate surface, turns to amorphous silicon membrane crystallization many
Polycrystal silicon film；
Sensor, the thickness for measuring the amorphous silicon membrane；
First controller, the data for being obtained according to the sensor generate control information, feed back to the laser controlling dress
Put, to adjust the parameter of the laser control apparatus.
2. laser anneal device according to claim 1, it is characterised in that the laser control apparatus includes：
LASER Light Source；
Mechanical arm, position and angle for adjusting the LASER Light Source；
Second controller, the control information generated according to first controller controls action and the institute of the mechanical arm
State LASER Light Source parameter.
3. laser anneal device according to claim 1 or 2, it is characterised in that the sensor includes：
Measurement end, the thickness for measuring the amorphous silicon membrane；
Output end, is electrically connected with first controller, the information for transmitting the measurement end collection.
4. the laser anneal device according to any one of claims 1 to 3, it is characterised in that first controller includes：
Data storage cell, the corresponding technological parameter of different-thickness and the sensor for storing the amorphous silicon membrane
The data of collection；
Data processing unit, data and the technological parameter for the sensor to be gathered are compared, and generate the control
Information processed.
5. the laser anneal device according to any one of Claims 1-4, it is characterised in that the laser anneal device is also
Include bogey, the bogey is electrically connected with first controller, for carrying the substrate.
6. the laser anneal device according to any one of claim 2 to 5, it is characterised in that the LASER Light Source is defined point
Sub- LASER Light Source.
7. a kind of laser annealing technique, it is characterised in that comprise the following steps：
Sensor measures the thickness of amorphous silicon membrane；
First controller generates control information according to thickness information and feeds back to laser control apparatus；
Adjust the parameter of the laser control apparatus；
Laser control apparatus launches laser beam to the amorphous silicon membrane, the amorphous silicon membrane crystallization is turned to polysilicon thin
Film.
8. laser annealing technique according to claim 7, it is characterised in that include the step of the generation control information：
Form the corresponding technological parameter of different-thickness of amorphous silicon membrane；
The data that the sensor is gathered are compared with the technological parameter.
9. laser annealing technique according to claim 8, it is characterised in that the step of forming the technological parameter includes：
Measure the thickness of amorphous silicon membrane；
Launch the laser beam to the amorphous silicon membrane with different parameters respectively, obtain polysilicon membrane；
Performance test is carried out to the polysilicon membrane.
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| CN201710271580.1A CN107275185A (en) | 2017-04-24 | 2017-04-24 | Laser anneal device and its annealing process |
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Cited By (1)
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| CN113097107A (en) * | 2021-03-26 | 2021-07-09 | 常州时创能源股份有限公司 | Amorphous silicon target bearing device |
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Application publication date: 20171020 |