JP2011248347A - フォトマスク - Google Patents
フォトマスク Download PDFInfo
- Publication number
- JP2011248347A JP2011248347A JP2011097863A JP2011097863A JP2011248347A JP 2011248347 A JP2011248347 A JP 2011248347A JP 2011097863 A JP2011097863 A JP 2011097863A JP 2011097863 A JP2011097863 A JP 2011097863A JP 2011248347 A JP2011248347 A JP 2011248347A
- Authority
- JP
- Japan
- Prior art keywords
- angle
- auxiliary pattern
- photomask
- light shielding
- corner
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000004065 semiconductor Substances 0.000 abstract description 84
- 238000000034 method Methods 0.000 abstract description 38
- 238000000206 photolithography Methods 0.000 abstract description 19
- 238000004519 manufacturing process Methods 0.000 abstract description 8
- 239000010410 layer Substances 0.000 description 199
- 239000000758 substrate Substances 0.000 description 40
- 230000005669 field effect Effects 0.000 description 33
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 28
- 239000001301 oxygen Substances 0.000 description 28
- 229910052760 oxygen Inorganic materials 0.000 description 28
- 238000010438 heat treatment Methods 0.000 description 22
- 229910044991 metal oxide Inorganic materials 0.000 description 20
- 150000004706 metal oxides Chemical class 0.000 description 20
- 230000008569 process Effects 0.000 description 17
- 239000001257 hydrogen Substances 0.000 description 15
- 229910052739 hydrogen Inorganic materials 0.000 description 15
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 12
- 239000007789 gas Substances 0.000 description 12
- 229910052751 metal Inorganic materials 0.000 description 12
- 238000005530 etching Methods 0.000 description 11
- 230000003287 optical effect Effects 0.000 description 11
- 229910007541 Zn O Inorganic materials 0.000 description 10
- 230000000694 effects Effects 0.000 description 10
- 238000004544 sputter deposition Methods 0.000 description 10
- 229910052719 titanium Inorganic materials 0.000 description 10
- 239000010936 titanium Substances 0.000 description 10
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 9
- 229910052782 aluminium Inorganic materials 0.000 description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- 239000012535 impurity Substances 0.000 description 6
- 238000009832 plasma treatment Methods 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 229910045601 alloy Inorganic materials 0.000 description 5
- 239000000956 alloy Substances 0.000 description 5
- 229910021417 amorphous silicon Inorganic materials 0.000 description 5
- 230000007547 defect Effects 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 5
- 229910052721 tungsten Inorganic materials 0.000 description 5
- 239000010937 tungsten Substances 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 4
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 229910052804 chromium Inorganic materials 0.000 description 4
- 239000011651 chromium Substances 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 4
- 238000005215 recombination Methods 0.000 description 4
- 230000006798 recombination Effects 0.000 description 4
- 239000002356 single layer Substances 0.000 description 4
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 3
- 229910019092 Mg-O Inorganic materials 0.000 description 3
- 229910019395 Mg—O Inorganic materials 0.000 description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 3
- 239000012298 atmosphere Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 229910001882 dioxygen Inorganic materials 0.000 description 3
- 150000002431 hydrogen Chemical class 0.000 description 3
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 3
- 229910052750 molybdenum Inorganic materials 0.000 description 3
- 239000011733 molybdenum Substances 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 238000001878 scanning electron micrograph Methods 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 229910052715 tantalum Inorganic materials 0.000 description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 3
- 230000003313 weakening effect Effects 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 2
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 2
- 229910052790 beryllium Inorganic materials 0.000 description 2
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000018044 dehydration Effects 0.000 description 2
- 238000006297 dehydration reaction Methods 0.000 description 2
- 238000006356 dehydrogenation reaction Methods 0.000 description 2
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 229910001195 gallium oxide Inorganic materials 0.000 description 2
- 239000001307 helium Substances 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 2
- 229910003437 indium oxide Inorganic materials 0.000 description 2
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910021424 microcrystalline silicon Inorganic materials 0.000 description 2
- 229910052754 neon Inorganic materials 0.000 description 2
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 229920003023 plastic Polymers 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 229920002620 polyvinyl fluoride Polymers 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 238000004151 rapid thermal annealing Methods 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 239000002344 surface layer Substances 0.000 description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 2
- 229910001930 tungsten oxide Inorganic materials 0.000 description 2
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 2
- 229910052726 zirconium Inorganic materials 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 229910018120 Al-Ga-Zn Inorganic materials 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- 230000005355 Hall effect Effects 0.000 description 1
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 229920012266 Poly(ether sulfone) PES Polymers 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000001154 acute effect Effects 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 229910000423 chromium oxide Inorganic materials 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 238000002484 cyclic voltammetry Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 229920002457 flexible plastic Polymers 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 150000004678 hydrides Chemical class 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920006267 polyester film Polymers 0.000 description 1
- 239000011112 polyethylene naphthalate Substances 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 229910052706 scandium Inorganic materials 0.000 description 1
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 description 1
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 150000003608 titanium Chemical class 0.000 description 1
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011097863A JP2011248347A (ja) | 2010-04-28 | 2011-04-26 | フォトマスク |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2010104402 | 2010-04-28 | ||
| JP2010104402 | 2010-04-28 | ||
| JP2011097863A JP2011248347A (ja) | 2010-04-28 | 2011-04-26 | フォトマスク |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2011248347A true JP2011248347A (ja) | 2011-12-08 |
| JP2011248347A5 JP2011248347A5 (enExample) | 2014-05-29 |
Family
ID=44858493
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011097863A Withdrawn JP2011248347A (ja) | 2010-04-28 | 2011-04-26 | フォトマスク |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US8512917B2 (enExample) |
| JP (1) | JP2011248347A (enExample) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2016012674A (ja) * | 2014-06-30 | 2016-01-21 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
| JP2016218183A (ja) * | 2015-05-18 | 2016-12-22 | 大日本印刷株式会社 | フォトマスクおよび導電性パターンの製造方法 |
| JPWO2022210159A1 (enExample) * | 2021-03-29 | 2022-10-06 |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102749801A (zh) * | 2012-06-29 | 2012-10-24 | 北京京东方光电科技有限公司 | 一种掩模板 |
| CN104281000A (zh) * | 2014-10-23 | 2015-01-14 | 京东方科技集团股份有限公司 | 一种掩膜板 |
| CN106997147A (zh) * | 2017-05-27 | 2017-08-01 | 京东方科技集团股份有限公司 | 一种掩膜板、基板以及显示装置 |
| CN107505811B (zh) * | 2017-09-11 | 2020-05-05 | 深圳市华星光电技术有限公司 | 光罩 |
| US10481487B2 (en) | 2017-09-11 | 2019-11-19 | Shenzhen China Star Optoelectronics Technology Co., Ltd | Mask |
| CN109143774A (zh) * | 2018-07-18 | 2019-01-04 | 深圳市华星光电半导体显示技术有限公司 | 掩膜板及金属线的制作方法 |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5920487A (en) * | 1997-03-03 | 1999-07-06 | Motorola Inc. | Two dimensional lithographic proximity correction using DRC shape functions |
| JP2003255508A (ja) * | 2002-02-28 | 2003-09-10 | Oki Electric Ind Co Ltd | マスクパターンの補正方法、フォトマスク、露光方法、半導体装置 |
| JP2004093705A (ja) * | 2002-08-29 | 2004-03-25 | Fujitsu Ltd | マスクパターンの補正方法 |
| JP2004219587A (ja) * | 2003-01-10 | 2004-08-05 | Dainippon Printing Co Ltd | 光近接補正パターンを有するフォトマスク用データの作成方法と、光近接補正パターンを有するフォトマスク |
| JP2006119475A (ja) * | 2004-10-22 | 2006-05-11 | Toppan Printing Co Ltd | 近接効果補正方法、フォトマスク、デバイス、近接効果補正装置 |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04251253A (ja) | 1991-01-09 | 1992-09-07 | Fujitsu Ltd | 露光マスク |
| JP3241628B2 (ja) | 1997-03-21 | 2001-12-25 | シャープ株式会社 | 半導体装置の製造装置 |
| KR100283408B1 (ko) | 1998-01-21 | 2001-04-02 | 김영환 | 반도체용마스크 |
| US6811935B2 (en) * | 2000-07-05 | 2004-11-02 | Numerical Technologies, Inc. | Phase shift mask layout process for patterns including intersecting line segments |
| JP4736277B2 (ja) | 2001-08-28 | 2011-07-27 | 凸版印刷株式会社 | カラーフィルターの着色画素の形成方法及びカラーフィルターのブラックマトリックスの形成方法 |
| JP3998458B2 (ja) * | 2001-11-08 | 2007-10-24 | 富士通株式会社 | 波長に依存しないリソグラフィ用の露光パターン生成方法及び露光パターン生成装置 |
| JP3746497B2 (ja) | 2003-06-24 | 2006-02-15 | 松下電器産業株式会社 | フォトマスク |
| JP2005173384A (ja) | 2003-12-12 | 2005-06-30 | Advanced Color Tec Kk | フォトマスク |
| US7579220B2 (en) | 2005-05-20 | 2009-08-25 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device manufacturing method |
| EP1998373A3 (en) | 2005-09-29 | 2012-10-31 | Semiconductor Energy Laboratory Co, Ltd. | Semiconductor device having oxide semiconductor layer and manufacturing method thereof |
| JP5078246B2 (ja) | 2005-09-29 | 2012-11-21 | 株式会社半導体エネルギー研究所 | 半導体装置、及び半導体装置の作製方法 |
| US7601566B2 (en) | 2005-10-18 | 2009-10-13 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
-
2011
- 2011-04-26 JP JP2011097863A patent/JP2011248347A/ja not_active Withdrawn
- 2011-04-26 US US13/093,974 patent/US8512917B2/en not_active Expired - Fee Related
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5920487A (en) * | 1997-03-03 | 1999-07-06 | Motorola Inc. | Two dimensional lithographic proximity correction using DRC shape functions |
| JP2003255508A (ja) * | 2002-02-28 | 2003-09-10 | Oki Electric Ind Co Ltd | マスクパターンの補正方法、フォトマスク、露光方法、半導体装置 |
| JP2004093705A (ja) * | 2002-08-29 | 2004-03-25 | Fujitsu Ltd | マスクパターンの補正方法 |
| JP2004219587A (ja) * | 2003-01-10 | 2004-08-05 | Dainippon Printing Co Ltd | 光近接補正パターンを有するフォトマスク用データの作成方法と、光近接補正パターンを有するフォトマスク |
| JP2006119475A (ja) * | 2004-10-22 | 2006-05-11 | Toppan Printing Co Ltd | 近接効果補正方法、フォトマスク、デバイス、近接効果補正装置 |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2016012674A (ja) * | 2014-06-30 | 2016-01-21 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
| JP2016218183A (ja) * | 2015-05-18 | 2016-12-22 | 大日本印刷株式会社 | フォトマスクおよび導電性パターンの製造方法 |
| JPWO2022210159A1 (enExample) * | 2021-03-29 | 2022-10-06 | ||
| WO2022210159A1 (ja) * | 2021-03-29 | 2022-10-06 | シチズン時計株式会社 | 電鋳型の製造方法及びフォトマスク |
| JP7764467B2 (ja) | 2021-03-29 | 2025-11-05 | シチズン時計株式会社 | 電鋳型の製造方法及びフォトマスク |
Also Published As
| Publication number | Publication date |
|---|---|
| US8512917B2 (en) | 2013-08-20 |
| US20110269060A1 (en) | 2011-11-03 |
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