JP2016012674A - 半導体装置およびその製造方法 - Google Patents
半導体装置およびその製造方法 Download PDFInfo
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- JP2016012674A JP2016012674A JP2014133852A JP2014133852A JP2016012674A JP 2016012674 A JP2016012674 A JP 2016012674A JP 2014133852 A JP2014133852 A JP 2014133852A JP 2014133852 A JP2014133852 A JP 2014133852A JP 2016012674 A JP2016012674 A JP 2016012674A
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- insulating film
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 253
- 238000004519 manufacturing process Methods 0.000 title claims description 72
- 230000015654 memory Effects 0.000 claims abstract description 306
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 136
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 136
- 238000005530 etching Methods 0.000 claims description 101
- 238000002955 isolation Methods 0.000 claims description 89
- 239000000758 substrate Substances 0.000 claims description 89
- 238000000034 method Methods 0.000 claims description 82
- 238000003860 storage Methods 0.000 claims description 73
- 239000012535 impurity Substances 0.000 claims description 67
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 41
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 41
- 238000005468 ion implantation Methods 0.000 claims description 16
- 230000008569 process Effects 0.000 claims description 9
- 230000000694 effects Effects 0.000 claims description 8
- 238000012937 correction Methods 0.000 claims description 6
- 230000003287 optical effect Effects 0.000 claims description 6
- 230000001681 protective effect Effects 0.000 claims description 6
- 238000000926 separation method Methods 0.000 abstract 1
- 230000015572 biosynthetic process Effects 0.000 description 76
- 238000009792 diffusion process Methods 0.000 description 47
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 44
- 229920005591 polysilicon Polymers 0.000 description 43
- 230000002093 peripheral effect Effects 0.000 description 40
- 238000005229 chemical vapour deposition Methods 0.000 description 33
- 239000011229 interlayer Substances 0.000 description 28
- 238000000206 photolithography Methods 0.000 description 18
- 230000015556 catabolic process Effects 0.000 description 17
- 229910021332 silicide Inorganic materials 0.000 description 17
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 17
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 16
- 229910052710 silicon Inorganic materials 0.000 description 16
- 239000010703 silicon Substances 0.000 description 16
- 125000006850 spacer group Chemical group 0.000 description 15
- 230000006870 function Effects 0.000 description 14
- 230000006872 improvement Effects 0.000 description 14
- 238000009413 insulation Methods 0.000 description 12
- 239000010410 layer Substances 0.000 description 12
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 11
- 239000010936 titanium Substances 0.000 description 11
- 229910052719 titanium Inorganic materials 0.000 description 11
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 10
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 10
- 101150025279 DIT1 gene Proteins 0.000 description 9
- 230000007423 decrease Effects 0.000 description 9
- PCLURTMBFDTLSK-UHFFFAOYSA-N nickel platinum Chemical compound [Ni].[Pt] PCLURTMBFDTLSK-UHFFFAOYSA-N 0.000 description 9
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 8
- 229910052698 phosphorus Inorganic materials 0.000 description 8
- 239000011574 phosphorus Substances 0.000 description 8
- 229910052721 tungsten Inorganic materials 0.000 description 8
- 239000010937 tungsten Substances 0.000 description 8
- 101000887873 Arabidopsis thaliana Glycolate oxidase 2 Proteins 0.000 description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 7
- 101100533758 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) SNF3 gene Proteins 0.000 description 7
- 238000000137 annealing Methods 0.000 description 7
- 229910052802 copper Inorganic materials 0.000 description 7
- 239000010949 copper Substances 0.000 description 7
- 229910052735 hafnium Inorganic materials 0.000 description 7
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 7
- 229910021339 platinum silicide Inorganic materials 0.000 description 7
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 7
- 238000013461 design Methods 0.000 description 6
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 6
- 230000002829 reductive effect Effects 0.000 description 6
- 101000702559 Homo sapiens Probable global transcription activator SNF2L2 Proteins 0.000 description 5
- 101000702545 Homo sapiens Transcription activator BRG1 Proteins 0.000 description 5
- 102100031021 Probable global transcription activator SNF2L2 Human genes 0.000 description 5
- 229910052785 arsenic Inorganic materials 0.000 description 5
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 229910000449 hafnium oxide Inorganic materials 0.000 description 5
- 229910052757 nitrogen Inorganic materials 0.000 description 5
- 229910052715 tantalum Inorganic materials 0.000 description 5
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 4
- 239000004020 conductor Substances 0.000 description 4
- 230000014759 maintenance of location Effects 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- 101150055709 SNF1 gene Proteins 0.000 description 3
- 101100071632 Schizosaccharomyces pombe (strain 972 / ATCC 24843) hsp9 gene Proteins 0.000 description 3
- KPSZQYZCNSCYGG-UHFFFAOYSA-N [B].[B] Chemical compound [B].[B] KPSZQYZCNSCYGG-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 239000012298 atmosphere Substances 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 229910044991 metal oxide Inorganic materials 0.000 description 3
- UPSOBXZLFLJAKK-UHFFFAOYSA-N ozone;tetraethyl silicate Chemical compound [O-][O+]=O.CCO[Si](OCC)(OCC)OCC UPSOBXZLFLJAKK-UHFFFAOYSA-N 0.000 description 3
- 230000036961 partial effect Effects 0.000 description 3
- 238000005498 polishing Methods 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 101000835846 Arabidopsis thaliana Sucrose nonfermenting 4-like protein Proteins 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- -1 Metal Oxide Nitride Chemical class 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 229910017052 cobalt Inorganic materials 0.000 description 2
- 239000010941 cobalt Substances 0.000 description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229910021334 nickel silicide Inorganic materials 0.000 description 2
- RUFLMLWJRZAWLJ-UHFFFAOYSA-N nickel silicide Chemical compound [Ni]=[Si]=[Ni] RUFLMLWJRZAWLJ-UHFFFAOYSA-N 0.000 description 2
- 239000012299 nitrogen atmosphere Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910001936 tantalum oxide Inorganic materials 0.000 description 2
- ZXEYZECDXFPJRJ-UHFFFAOYSA-N $l^{3}-silane;platinum Chemical compound [SiH3].[Pt] ZXEYZECDXFPJRJ-UHFFFAOYSA-N 0.000 description 1
- 230000005689 Fowler Nordheim tunneling Effects 0.000 description 1
- 229910003855 HfAlO Inorganic materials 0.000 description 1
- 229910004143 HfON Inorganic materials 0.000 description 1
- 229910004129 HfSiO Inorganic materials 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 101710097943 Viral-enhancing factor Proteins 0.000 description 1
- CEPICIBPGDWCRU-UHFFFAOYSA-N [Si].[Hf] Chemical compound [Si].[Hf] CEPICIBPGDWCRU-UHFFFAOYSA-N 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 230000001154 acute effect Effects 0.000 description 1
- 150000004645 aluminates Chemical class 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000013500 data storage Methods 0.000 description 1
- 238000010893 electron trap Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000002784 hot electron Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910000484 niobium oxide Inorganic materials 0.000 description 1
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
- RJCRUVXAWQRZKQ-UHFFFAOYSA-N oxosilicon;silicon Chemical compound [Si].[Si]=O RJCRUVXAWQRZKQ-UHFFFAOYSA-N 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 230000002195 synergetic effect Effects 0.000 description 1
- 150000003481 tantalum Chemical class 0.000 description 1
- 150000003608 titanium Chemical class 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 229910021341 titanium silicide Inorganic materials 0.000 description 1
- 150000003657 tungsten Chemical class 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
-
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
- H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0642—Isolation within the component, i.e. internal isolation
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0843—Source or drain regions of field-effect devices
- H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
-
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- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/401—Multistep manufacturing processes
- H01L29/4011—Multistep manufacturing processes for data storage electrodes
- H01L29/40117—Multistep manufacturing processes for data storage electrodes the electrodes comprising a charge-trapping insulator
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42324—Gate electrodes for transistors with a floating gate
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/4234—Gate electrodes for transistors with charge trapping gate insulator
- H01L29/42344—Gate electrodes for transistors with charge trapping gate insulator with at least one additional gate, e.g. program gate, erase gate or select gate
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Abstract
Description
<半導体チップのレイアウト構成例>
本実施の形態1における不揮発性メモリを有する半導体装置について図面を参照しながら説明する。まず、不揮発性メモリを含むシステムが形成された半導体装置(半導体チップ)のレイアウト構成について説明する。図1は、本実施の形態1における半導体チップCHPのレイアウト構成例を示す図である。図1において、半導体チップCHPは、CPU(Central Processing Unit)1、RAM(Random Access Memory)2、アナログ回路3、EEPROM(Electrically Erasable Programmable Read Only Memory)4、フラッシュメモリ5およびI/O(Input/Output)回路6を有し、半導体集積回路装置を構成している。
次に、本実施の形態1における不揮発性メモリの構成例について説明する。本実施の形態1における不揮発性メモリは、図1に示すEEPROM4やフラッシュメモリ5を構成するメモリである。すなわち、本実施の形態1における不揮発性メモリは、例えば、図1に示す半導体チップCHPを構成する半導体基板上に形成されている。
本発明者が見出した改善の余地は、不揮発性メモリの製造工程に起因するものであるため、以下では、例えば、図2のA−A線で切断した断面図を使用して、不揮発性メモリの製造工程を説明することにより、本発明者が見出した改善の余地について言及する。
図4は、本実施の形態1における半導体装置のデバイス構造例について説明する図である。図4では、メモリ形成領域に形成されている不揮発性メモリのデバイス構造と、周辺回路領域に形成されている高耐圧MISFET(Metal Insulator Semiconductor Field Effect Transistor)のデバイス構造とが図示されている。
以上のようにして、本実施の形態1における半導体装置が構成されており、次に、本実施の形態1における半導体装置の製造方法について、図面を参照しながら説明する。図5〜図22は、本実施の形態1における半導体装置の製造工程を説明する断面図であり、図4に示される半導体装置の製造工程に対応した図となっている。
続いて、本実施の形態1における特徴点について説明する。本実施の形態1における特徴点は、半導体装置の製造方法にある。具体的に、本実施の形態1における半導体装置の製造工程では、例えば、図9に示すように、メモリゲート電極MGを形成した後、このメモリゲート電極MGから露出する絶縁膜IF2をエッチングで除去し、その後、メモリゲート電極MGから露出する電荷蓄積膜ECFを除去する。このとき、絶縁膜IF2の端面(横側面)は露出し、かつ、電荷蓄積膜ECFの端面(横側面)も露出することになる。そして、この工程を経ることにより、例えば、図10に示すように、メモリゲート電極MGから絶縁膜IF1が露出する。ここで、本実施の形態1における第1特徴点は、絶縁膜IF2の端面が露出した状態では、メモリゲート電極MGから露出する絶縁膜IF1のエッチングを実施しない点にある。言い換えれば、本実施の形態1における第1特徴点は、絶縁膜IF2の端面を露出した状態では、メモリゲート電極MGから露出する絶縁膜IF1のエッチングを実施せずに、絶縁膜IF1を残存させながら、その後の工程を実施する点にある。
次に、本実施の形態2における技術的思想について説明する。以下では、まず、本実施の形態2で着目する改善の余地について説明し、その後、本実施の形態2における技術的思想について説明することにする。
図2は、前記実施の形態1における不揮発性メモリの平面レイアウト構成例を模式的に示す平面図である。図2において、素子分離領域STIは、半導体基板内をX方向に延在している一方、メモリゲート電極MGは、半導体基板上をY方向に延在している。したがって、素子分離領域STIとメモリゲート電極MGとは交差することになり、素子分離領域STIのうち、メモリゲート電極MGと交差する部分の領域を交差領域R1と呼び、この交差領域R1からソース領域SR側に突き出ている部分の領域を終端領域R2と呼ぶことにする。このとき、平面視において、端領域R2は、メモリゲート電極MGと接するとともに、ソース領域SRとも接することになる。
図25は、本実施の形態2における不揮発性メモリの平面レイアウト構成例を模式的に示す平面図である。図25に示す平面レイアウト構成は、図2に示す前記実施の形態1における平面レイアウト構成とほぼ同様であり、異なる特徴点について説明する。
次に、本実施の形態2における半導体装置の製造方法について、図面を参照しながら説明する。まず、図29から図32を使用して、平面的な観点から、本実施の形態2における半導体装置の製造方法について説明する。
半導体基板、
前記半導体基板内に互いに離間して形成されたドレイン領域およびソース領域、
前記半導体基板上に形成されたゲート絶縁膜、
前記ゲート絶縁膜上に形成されたコントロールゲート電極、
前記コントロールゲート電極の片側の側壁から前記半導体基板上にわたって形成された積層絶縁膜、
前記積層絶縁膜上に形成されたメモリゲート電極、
前記メモリゲート電極の片側の側壁に形成されたサイドウォールスペーサ、
を備え、
前記積層絶縁膜は、
第1絶縁膜、
前記第1絶縁膜上に形成された電荷蓄積膜、
前記電荷蓄積膜上に形成された第2絶縁膜、
を有し、
前記第1絶縁膜は、前記電荷蓄積膜の下層から前記サイドウォールスペーサの下層にわたって延在している、半導体装置。
付記1に記載の半導体装置において、
前記メモリゲート電極と前記サイドウォールスペーサとの間、および、前記サイドウォールスペーサと前記第1絶縁膜との間には、保護絶縁膜が形成されている、半導体装置。
付記1に記載の半導体装置において、
前記第2絶縁膜の一端面と前記電荷蓄積膜の一端面とは、面一である、半導体装置。
付記1に記載の半導体装置において、
前記第1絶縁膜と前記第2絶縁膜とは、同種類の膜である、半導体装置。
付記4に記載の半導体装置において、
前記第1絶縁膜は、酸化シリコン膜であり、
前記第2絶縁膜は、酸化シリコン膜である、半導体装置。
付記1に記載の半導体装置において、
前記メモリゲート電極は、サイドウォール形状をしている、半導体装置。
ES2 幅
MG メモリゲート電極
R1 交差領域
SR ソース領域
Claims (15)
- 半導体基板内に形成され、第1方向に延在する素子分離領域、
前記半導体基板上に形成され、前記第1方向と直交する第2方向に延在するコントロールゲート電極、
前記半導体基板上に形成され、前記コントロールゲート電極と並行して、前記第2方向に延在するメモリゲート電極、
前記半導体基板内に形成され、前記メモリゲート電極と並行して、前記第2方向に延在するソース領域、
を備え、
前記素子分離領域は、
平面視において、前記メモリゲート電極と交差する交差領域、
平面視において、前記交差領域と前記ソース領域とに接する終端領域、
を有し、
前記交差領域において、前記ソース領域側に位置する第1端辺の前記第2方向の第1幅は、前記コントロールゲート電極側に位置する第2端辺の前記第2方向の第2幅よりも大きい、半導体装置。 - 請求項1に記載の半導体装置において、
前記終端領域の前記第2方向の幅のうち、最も長い第3幅は、前記第1幅よりも大きい、半導体装置。 - 請求項2に記載の半導体装置において、
前記終端領域と前記ソース領域との境界線は、ラウンド形状をしている、半導体装置。 - 請求項1に記載の半導体装置において、
前記半導体装置は、さらに、前記コントロールゲート電極と前記メモリゲート電極との間に挟まれる第1部分と前記メモリゲート電極と前記半導体基板との間に挟まれる第2部分とを含む積層絶縁膜であって、前記第2方向に延在する前記積層絶縁膜を有する、半導体装置。 - 請求項4に記載の半導体装置において、
前記積層絶縁膜の前記第1部分は、
前記コントロールゲート電極と接する第1絶縁膜と、
前記メモリゲート電極と接する第2絶縁膜と、
前記第1絶縁膜と前記第2絶縁膜とに挟まれる電荷蓄積膜と、
から形成され、
前記積層絶縁膜の前記第2部分は、
前記半導体基板上に形成された前記第1絶縁膜と、
前記メモリゲート電極の下層に形成された前記第2絶縁膜と、
前記第1絶縁膜と前記第2絶縁膜とに挟まれた前記電荷蓄積膜と、
から形成されている、半導体装置。 - 請求項5に記載の半導体装置において、
前記第1絶縁膜は、酸化シリコン膜であり、
前記第2絶縁膜は、酸化シリコン膜であり、
前記電荷蓄積膜は、窒化シリコン膜である、半導体装置。 - 請求項1に記載の半導体装置において、
前記メモリゲート電極は、サイドウォール形状をしている、半導体装置。 - (a)半導体基板内を第1方向に延在する素子分離領域を形成する工程、
(b)前記半導体基板上を前記第1方向と直交する第2方向に延在するコントロールゲート電極を形成する工程、
(c)前記コントロールゲート電極と並行して、前記半導体基板上を前記第2方向に延在するメモリゲート電極を形成する工程、
(d)前記メモリゲート電極と並行して、前記半導体基板内を前記第2方向に延在するソース領域を形成する工程、
を備え、
前記(a)工程から前記(d)工程を経ることにより、
前記素子分離領域は、
平面視において、前記メモリゲート電極と交差する交差領域、
平面視において、前記交差領域と前記ソース領域とに接する終端領域、
を有し、
前記交差領域において、前記ソース領域側に位置する第1端辺の前記第2方向の第1幅は、前記コントロールゲート電極側に位置する第2端辺の前記第2方向の幅よりも大きい、半導体装置の製造方法。 - 請求項8に記載の半導体装置の製造方法において、
前記(a)工程は、光近接効果補正を取り入れたマスクを使用して、前記素子分離領域を形成する、半導体装置の製造方法。 - 請求項8に記載の半導体装置の製造方法において、
前記(a)工程は、光近接効果補正を取り入れたマスクを使用して、前記素子分離領域を形成することにより、
前記(a)工程から前記(d)工程を経た段階で、前記終端領域の前記第2方向の幅のうち、最も長い第3幅が、前記第1幅よりも大きく、かつ、前記終端領域の外形形状がラウンド形状となる、半導体装置の製造方法。 - 請求項8に記載の半導体装置の製造方法において、
前記(d)工程は、前記半導体基板内に、イオン注入法を使用して導電型不純物を導入することにより、前記ソース領域を形成する、半導体装置の製造方法。 - (a)半導体基板を用意する工程、
(b)前記半導体基板上にゲート絶縁膜を形成する工程、
(c)前記ゲート絶縁膜上にコントロールゲート電極を形成する工程、
(d)前記コントロールゲート電極を覆うように、前記半導体基板上に第1絶縁膜を形成する工程、
(e)前記第1絶縁膜上に電荷蓄積膜を形成する工程、
(f)前記電荷蓄積膜上に第2絶縁膜を形成する工程、
(g)前記(f)工程後、前記コントロールゲート電極の側壁に、前記第1絶縁膜と前記電荷蓄積膜と前記第2絶縁膜とからなる積層絶縁膜を介して、メモリゲート電極を形成する工程、
(h)前記(g)工程後、前記メモリゲート電極から露出する前記第2絶縁膜を除去する工程、
(i)前記(h)工程後、前記メモリゲート電極から露出する前記電荷蓄積膜を除去する工程、
を備え、
前記(h)工程後には、前記第2絶縁膜の端面を露出した状態で、前記第1絶縁膜をエッチングする工程は、存在しない、半導体装置の製造方法。 - 請求項12に記載の半導体装置の製造方法において、
(j)前記(h)工程後、少なくとも、前記第2絶縁膜の露出した端面を覆う保護絶縁膜を形成する工程を有する、半導体装置の製造方法。 - 請求項12に記載の半導体装置の製造方法において、
前記第1絶縁膜と前記第2絶縁膜とは、同種類の膜である、半導体装置の製造方法。 - 請求項14に記載の半導体装置の製造方法において、
前記第1絶縁膜は、酸化シリコン膜であり、
前記第2絶縁膜は、酸化シリコン膜である、半導体装置の製造方法。
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