JP2011201083A5 - - Google Patents

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Publication number
JP2011201083A5
JP2011201083A5 JP2010068916A JP2010068916A JP2011201083A5 JP 2011201083 A5 JP2011201083 A5 JP 2011201083A5 JP 2010068916 A JP2010068916 A JP 2010068916A JP 2010068916 A JP2010068916 A JP 2010068916A JP 2011201083 A5 JP2011201083 A5 JP 2011201083A5
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JP
Japan
Prior art keywords
mold
resin
gas
porous layer
imprint apparatus
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2010068916A
Other languages
English (en)
Japanese (ja)
Other versions
JP5618588B2 (ja
JP2011201083A (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from JP2010068916A external-priority patent/JP5618588B2/ja
Priority to JP2010068916A priority Critical patent/JP5618588B2/ja
Priority to EP11158403.3A priority patent/EP2369412B1/en
Priority to US13/049,207 priority patent/US9122149B2/en
Priority to TW100109349A priority patent/TWI499498B/zh
Priority to KR1020110025774A priority patent/KR101374001B1/ko
Priority to CN201110071162.0A priority patent/CN102200687B/zh
Publication of JP2011201083A publication Critical patent/JP2011201083A/ja
Publication of JP2011201083A5 publication Critical patent/JP2011201083A5/ja
Priority to US14/261,889 priority patent/US9280048B2/en
Publication of JP5618588B2 publication Critical patent/JP5618588B2/ja
Application granted granted Critical
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2010068916A 2010-03-24 2010-03-24 インプリント方法 Active JP5618588B2 (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2010068916A JP5618588B2 (ja) 2010-03-24 2010-03-24 インプリント方法
EP11158403.3A EP2369412B1 (en) 2010-03-24 2011-03-16 Imprint apparatus and method of manufacturing an article
US13/049,207 US9122149B2 (en) 2010-03-24 2011-03-16 Imprint apparatus and method of manufacturing article
TW100109349A TWI499498B (zh) 2010-03-24 2011-03-18 壓印設備及製造物品的方法
KR1020110025774A KR101374001B1 (ko) 2010-03-24 2011-03-23 임프린트 장치 및 제품 제조 방법
CN201110071162.0A CN102200687B (zh) 2010-03-24 2011-03-24 压印设备和制造物品的方法
US14/261,889 US9280048B2 (en) 2010-03-24 2014-04-25 Imprint apparatus and method of manufacturing article

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010068916A JP5618588B2 (ja) 2010-03-24 2010-03-24 インプリント方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2014184515A Division JP5785646B2 (ja) 2014-09-10 2014-09-10 インプリント装置、および、物品の製造方法

Publications (3)

Publication Number Publication Date
JP2011201083A JP2011201083A (ja) 2011-10-13
JP2011201083A5 true JP2011201083A5 (enExample) 2013-05-09
JP5618588B2 JP5618588B2 (ja) 2014-11-05

Family

ID=44202850

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010068916A Active JP5618588B2 (ja) 2010-03-24 2010-03-24 インプリント方法

Country Status (6)

Country Link
US (2) US9122149B2 (enExample)
EP (1) EP2369412B1 (enExample)
JP (1) JP5618588B2 (enExample)
KR (1) KR101374001B1 (enExample)
CN (1) CN102200687B (enExample)
TW (1) TWI499498B (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5679850B2 (ja) * 2011-02-07 2015-03-04 キヤノン株式会社 インプリント装置、および、物品の製造方法
JP5787691B2 (ja) * 2011-09-21 2015-09-30 キヤノン株式会社 インプリント装置、それを用いた物品の製造方法
JP5868215B2 (ja) * 2012-02-27 2016-02-24 キヤノン株式会社 インプリント装置およびインプリント方法、それを用いた物品の製造方法
JP6230353B2 (ja) * 2013-09-25 2017-11-15 キヤノン株式会社 パターン形状を有する膜の製造方法、光学部品の製造方法、回路基板の製造方法、電子機器の製造方法
JP6341883B2 (ja) * 2014-06-27 2018-06-13 キヤノン株式会社 位置検出装置、位置検出方法、インプリント装置及び物品の製造方法
US10204780B2 (en) * 2015-09-08 2019-02-12 Canon Kabushiki Kaisha Imprint apparatus, and article manufacturing method
JP7058951B2 (ja) * 2017-05-24 2022-04-25 キヤノン株式会社 インプリント装置、および物品の製造方法
JP7118674B2 (ja) * 2018-03-12 2022-08-16 キヤノン株式会社 型を用いて基板上の組成物を成形する成形装置、成形方法、および物品の製造方法
WO2019188932A1 (ja) * 2018-03-30 2019-10-03 富士フイルム株式会社 経皮吸収シート製造用のモールド、針状凸部を有する経皮吸収シートの製造装置及び方法
US11951660B2 (en) * 2021-10-11 2024-04-09 Canon Kabushiki Kaisha Shaping system including an evaporation cover, shaping process, and method of manufacturing an article

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080164638A1 (en) * 2006-11-28 2008-07-10 Wei Zhang Method and apparatus for rapid imprint lithography
JP3856117B2 (ja) * 2002-01-28 2006-12-13 日本碍子株式会社 射出成形体の製造方法
US7296519B2 (en) * 2002-05-27 2007-11-20 Koninklijke Philips Electronics N.V. Method and device for transferring a pattern from stamp to a substrate
US7611348B2 (en) * 2005-04-19 2009-11-03 Asml Netherlands B.V. Imprint lithography
KR100710851B1 (ko) 2006-03-22 2007-04-23 (주) 비앤피 사이언스 나노 임프린트 리소그래피 방법 및 장치
JP4185941B2 (ja) 2006-04-04 2008-11-26 キヤノン株式会社 ナノインプリント方法及びナノインプリント装置
JP4872052B2 (ja) * 2006-04-12 2012-02-08 独立行政法人産業技術総合研究所 微細金型コア部材
JP4996150B2 (ja) * 2006-07-07 2012-08-08 株式会社日立ハイテクノロジーズ 微細構造転写装置および微細構造転写方法
US8017183B2 (en) * 2007-09-26 2011-09-13 Eastman Kodak Company Organosiloxane materials for selective area deposition of inorganic materials
KR101610180B1 (ko) * 2007-11-21 2016-04-07 캐논 나노테크놀로지즈 인코퍼레이티드 나노-임프린트 리소그래피용 다공성 주형 및 임프린팅 스택
TWI353961B (en) * 2008-06-23 2011-12-11 Univ Nat Cheng Kung Micro-nano imprinting mould and imprinting process
WO2010005032A1 (ja) 2008-07-09 2010-01-14 東洋合成工業株式会社 パターン形成方法
CN102067039B (zh) * 2008-08-08 2014-04-09 Asml荷兰有限公司 光刻设备和器件制造方法
US20100104852A1 (en) 2008-10-23 2010-04-29 Molecular Imprints, Inc. Fabrication of High-Throughput Nano-Imprint Lithography Templates
NL2003600A (en) * 2008-12-04 2010-06-07 Asml Netherlands Bv Imprint lithography apparatus and method.
JP2010149482A (ja) * 2008-12-26 2010-07-08 Toshiba Corp インプリント用モールドおよびパターン形成方法
JP2011161727A (ja) * 2010-02-08 2011-08-25 Fujifilm Corp 光学成形体の成形型、光学成形体の成形方法、及び、レンズアレイ
US8541053B2 (en) * 2010-07-08 2013-09-24 Molecular Imprints, Inc. Enhanced densification of silicon oxide layers

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