JP2011198962A5 - - Google Patents

Download PDF

Info

Publication number
JP2011198962A5
JP2011198962A5 JP2010063288A JP2010063288A JP2011198962A5 JP 2011198962 A5 JP2011198962 A5 JP 2011198962A5 JP 2010063288 A JP2010063288 A JP 2010063288A JP 2010063288 A JP2010063288 A JP 2010063288A JP 2011198962 A5 JP2011198962 A5 JP 2011198962A5
Authority
JP
Japan
Prior art keywords
laminate
metal layer
cleavage direction
substrate
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2010063288A
Other languages
English (en)
Japanese (ja)
Other versions
JP2011198962A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2010063288A priority Critical patent/JP2011198962A/ja
Priority claimed from JP2010063288A external-priority patent/JP2011198962A/ja
Priority to US12/956,245 priority patent/US20110229997A1/en
Priority to EP10195103A priority patent/EP2367209A2/en
Priority to TW100105421A priority patent/TW201214746A/zh
Priority to CN2011100669676A priority patent/CN102194933A/zh
Publication of JP2011198962A publication Critical patent/JP2011198962A/ja
Publication of JP2011198962A5 publication Critical patent/JP2011198962A5/ja
Pending legal-status Critical Current

Links

JP2010063288A 2010-03-18 2010-03-18 半導体発光素子の製造方法 Pending JP2011198962A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2010063288A JP2011198962A (ja) 2010-03-18 2010-03-18 半導体発光素子の製造方法
US12/956,245 US20110229997A1 (en) 2010-03-18 2010-11-30 Method for manufacturing semiconductor light emitting device
EP10195103A EP2367209A2 (en) 2010-03-18 2010-12-15 Method for manufacturing semiconductor light emitting device
TW100105421A TW201214746A (en) 2010-03-18 2011-02-18 Method for manufacturing semiconductor light emitting device
CN2011100669676A CN102194933A (zh) 2010-03-18 2011-03-04 半导体发光元件的制造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010063288A JP2011198962A (ja) 2010-03-18 2010-03-18 半導体発光素子の製造方法

Publications (2)

Publication Number Publication Date
JP2011198962A JP2011198962A (ja) 2011-10-06
JP2011198962A5 true JP2011198962A5 (enExample) 2012-03-22

Family

ID=44202051

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010063288A Pending JP2011198962A (ja) 2010-03-18 2010-03-18 半導体発光素子の製造方法

Country Status (5)

Country Link
US (1) US20110229997A1 (enExample)
EP (1) EP2367209A2 (enExample)
JP (1) JP2011198962A (enExample)
CN (1) CN102194933A (enExample)
TW (1) TW201214746A (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100599012B1 (ko) * 2005-06-29 2006-07-12 서울옵토디바이스주식회사 열전도성 기판을 갖는 발광 다이오드 및 그것을 제조하는방법
JP2010109015A (ja) * 2008-10-28 2010-05-13 Panasonic Electric Works Co Ltd 半導体発光素子の製造方法
TWI478384B (zh) 2011-12-28 2015-03-21 Toshiba Kk Semiconductor light emitting element and manufacturing method thereof
FR2992466A1 (fr) 2012-06-22 2013-12-27 Soitec Silicon On Insulator Procede de realisation de contact pour led et structure resultante
JP7347197B2 (ja) * 2019-12-19 2023-09-20 トヨタ自動車株式会社 回転電機コアの製造方法および製造装置

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3230638B2 (ja) * 1993-02-10 2001-11-19 シャープ株式会社 発光ダイオードの製造方法
JP2820120B2 (ja) * 1996-06-03 1998-11-05 日本電気株式会社 半導体基板の製造方法
TW502458B (en) * 1999-06-09 2002-09-11 Toshiba Corp Bonding type semiconductor substrate, semiconductor light emission element and manufacturing method thereof
US6333208B1 (en) * 1999-07-13 2001-12-25 Li Chiung-Tung Robust manufacturing method for making a III-V compound semiconductor device by misaligned wafer bonding
JP2002134374A (ja) * 2000-10-25 2002-05-10 Mitsubishi Electric Corp 半導体ウェハ、その製造方法およびその製造装置
CN100403543C (zh) * 2001-12-04 2008-07-16 信越半导体株式会社 贴合晶片及贴合晶片的制造方法
TWI287880B (en) 2004-03-18 2007-10-01 Showa Denko Kk Group III nitride semiconductor light-emitting device and method of producing the same
JP4952883B2 (ja) * 2006-01-17 2012-06-13 ソニー株式会社 半導体発光素子
JP4935136B2 (ja) * 2006-03-22 2012-05-23 パナソニック株式会社 発光素子
US7795054B2 (en) * 2006-12-08 2010-09-14 Samsung Led Co., Ltd. Vertical structure LED device and method of manufacturing the same
JP4888276B2 (ja) * 2007-08-09 2012-02-29 三菱電機株式会社 半導体ウエハ装置
JP4471003B2 (ja) * 2008-01-23 2010-06-02 セイコーエプソン株式会社 接合体の形成方法
JP4492733B2 (ja) * 2008-05-27 2010-06-30 ソニー株式会社 発光装置及び発光装置の製造方法
JP2010186829A (ja) * 2009-02-10 2010-08-26 Toshiba Corp 発光素子の製造方法

Similar Documents

Publication Publication Date Title
WO2009120311A3 (en) Biolaminate composite assembly and related methods
JP2013543280A5 (enExample)
TW200802972A (en) GaN-based semiconductor light-emitting device and method for the fabrication thereof
WO2012108627A3 (en) Light emitting diode having photonic crystal structure and method of fabricating the same
WO2009005311A3 (en) Light emitting device and method of fabricating the same
WO2009048704A3 (en) Light emitting diode with bonded semiconductor wavelength converter
JP2014515560A5 (enExample)
WO2012012206A3 (en) Self compensated directional coupler
JP2011129920A5 (enExample)
JP2010541295A5 (enExample)
WO2012010662A3 (fr) Procede d'assemblage par collage direct entre deux elements comprenant des portions de cuivre et de materiaux dielectriques
WO2014017871A3 (ko) 반도체 발광소자
WO2012021196A3 (en) Method for manufacturing electronic devices and electronic devices thereof
JP2011009723A5 (enExample)
EP2736087A3 (en) Semiconductor light emitting device and method for manufacturing same
WO2008102548A1 (ja) 半導体発光素子および半導体発光装置の製造方法
JP2013069807A5 (enExample)
WO2008152945A1 (ja) 半導体発光装置及びその製造方法
WO2010146390A3 (en) Light emitting diodes
WO2011023397A8 (en) Device comprising an organic light emitting display
JP2016538689A5 (enExample)
JP2016033967A5 (enExample)
JP2011198962A5 (enExample)
JP2010231969A5 (enExample)
WO2013032688A3 (en) Discontinuous patterned bonds for semiconductor devices and associated systems and methods