JP2011198962A - 半導体発光素子の製造方法 - Google Patents

半導体発光素子の製造方法 Download PDF

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Publication number
JP2011198962A
JP2011198962A JP2010063288A JP2010063288A JP2011198962A JP 2011198962 A JP2011198962 A JP 2011198962A JP 2010063288 A JP2010063288 A JP 2010063288A JP 2010063288 A JP2010063288 A JP 2010063288A JP 2011198962 A JP2011198962 A JP 2011198962A
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JP
Japan
Prior art keywords
substrate
stacked body
metal layer
light emitting
laminate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2010063288A
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English (en)
Japanese (ja)
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JP2011198962A5 (enExample
Inventor
Yasuhiko Akaike
康彦 赤池
Wakana Nishiwaki
若菜 西脇
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP2010063288A priority Critical patent/JP2011198962A/ja
Priority to US12/956,245 priority patent/US20110229997A1/en
Priority to EP10195103A priority patent/EP2367209A2/en
Priority to TW100105421A priority patent/TW201214746A/zh
Priority to CN2011100669676A priority patent/CN102194933A/zh
Publication of JP2011198962A publication Critical patent/JP2011198962A/ja
Publication of JP2011198962A5 publication Critical patent/JP2011198962A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers

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  • Led Devices (AREA)
  • Semiconductor Lasers (AREA)
JP2010063288A 2010-03-18 2010-03-18 半導体発光素子の製造方法 Pending JP2011198962A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2010063288A JP2011198962A (ja) 2010-03-18 2010-03-18 半導体発光素子の製造方法
US12/956,245 US20110229997A1 (en) 2010-03-18 2010-11-30 Method for manufacturing semiconductor light emitting device
EP10195103A EP2367209A2 (en) 2010-03-18 2010-12-15 Method for manufacturing semiconductor light emitting device
TW100105421A TW201214746A (en) 2010-03-18 2011-02-18 Method for manufacturing semiconductor light emitting device
CN2011100669676A CN102194933A (zh) 2010-03-18 2011-03-04 半导体发光元件的制造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010063288A JP2011198962A (ja) 2010-03-18 2010-03-18 半導体発光素子の製造方法

Publications (2)

Publication Number Publication Date
JP2011198962A true JP2011198962A (ja) 2011-10-06
JP2011198962A5 JP2011198962A5 (enExample) 2012-03-22

Family

ID=44202051

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010063288A Pending JP2011198962A (ja) 2010-03-18 2010-03-18 半導体発光素子の製造方法

Country Status (5)

Country Link
US (1) US20110229997A1 (enExample)
EP (1) EP2367209A2 (enExample)
JP (1) JP2011198962A (enExample)
CN (1) CN102194933A (enExample)
TW (1) TW201214746A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9865786B2 (en) 2012-06-22 2018-01-09 Soitec Method of manufacturing structures of LEDs or solar cells

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100599012B1 (ko) * 2005-06-29 2006-07-12 서울옵토디바이스주식회사 열전도성 기판을 갖는 발광 다이오드 및 그것을 제조하는방법
JP2010109015A (ja) * 2008-10-28 2010-05-13 Panasonic Electric Works Co Ltd 半導体発光素子の製造方法
TWI478384B (zh) 2011-12-28 2015-03-21 Toshiba Kk Semiconductor light emitting element and manufacturing method thereof
JP7347197B2 (ja) * 2019-12-19 2023-09-20 トヨタ自動車株式会社 回転電機コアの製造方法および製造装置

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06296040A (ja) * 1993-02-10 1994-10-21 Sharp Corp 発光ダイオードの製造方法
JPH09320912A (ja) * 1996-06-03 1997-12-12 Nec Corp 半導体基板およびその製造方法
WO2003049189A1 (en) * 2001-12-04 2003-06-12 Shin-Etsu Handotai Co.,Ltd. Pasted wafer and method for producing pasted wafer
JP2007194247A (ja) * 2006-01-17 2007-08-02 Sony Corp 半導体発光素子およびその製造方法
JP2009040639A (ja) * 2007-08-09 2009-02-26 Mitsubishi Electric Corp 半導体ウエハ装置

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW502458B (en) * 1999-06-09 2002-09-11 Toshiba Corp Bonding type semiconductor substrate, semiconductor light emission element and manufacturing method thereof
US6333208B1 (en) * 1999-07-13 2001-12-25 Li Chiung-Tung Robust manufacturing method for making a III-V compound semiconductor device by misaligned wafer bonding
JP2002134374A (ja) * 2000-10-25 2002-05-10 Mitsubishi Electric Corp 半導体ウェハ、その製造方法およびその製造装置
TWI287880B (en) 2004-03-18 2007-10-01 Showa Denko Kk Group III nitride semiconductor light-emitting device and method of producing the same
JP4935136B2 (ja) * 2006-03-22 2012-05-23 パナソニック株式会社 発光素子
US7795054B2 (en) * 2006-12-08 2010-09-14 Samsung Led Co., Ltd. Vertical structure LED device and method of manufacturing the same
JP4471003B2 (ja) * 2008-01-23 2010-06-02 セイコーエプソン株式会社 接合体の形成方法
JP4492733B2 (ja) * 2008-05-27 2010-06-30 ソニー株式会社 発光装置及び発光装置の製造方法
JP2010186829A (ja) * 2009-02-10 2010-08-26 Toshiba Corp 発光素子の製造方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06296040A (ja) * 1993-02-10 1994-10-21 Sharp Corp 発光ダイオードの製造方法
JPH09320912A (ja) * 1996-06-03 1997-12-12 Nec Corp 半導体基板およびその製造方法
WO2003049189A1 (en) * 2001-12-04 2003-06-12 Shin-Etsu Handotai Co.,Ltd. Pasted wafer and method for producing pasted wafer
JP2007194247A (ja) * 2006-01-17 2007-08-02 Sony Corp 半導体発光素子およびその製造方法
JP2009040639A (ja) * 2007-08-09 2009-02-26 Mitsubishi Electric Corp 半導体ウエハ装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9865786B2 (en) 2012-06-22 2018-01-09 Soitec Method of manufacturing structures of LEDs or solar cells

Also Published As

Publication number Publication date
TW201214746A (en) 2012-04-01
CN102194933A (zh) 2011-09-21
US20110229997A1 (en) 2011-09-22
EP2367209A2 (en) 2011-09-21

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