JP2013543280A5 - - Google Patents

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Publication number
JP2013543280A5
JP2013543280A5 JP2013539854A JP2013539854A JP2013543280A5 JP 2013543280 A5 JP2013543280 A5 JP 2013543280A5 JP 2013539854 A JP2013539854 A JP 2013539854A JP 2013539854 A JP2013539854 A JP 2013539854A JP 2013543280 A5 JP2013543280 A5 JP 2013543280A5
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JP
Japan
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component
wavelength converter
semiconductor
bonding layer
adjacent
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JP2013539854A
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Japanese (ja)
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JP2013543280A (ja
JP6132770B2 (ja
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Priority claimed from PCT/US2011/057635 external-priority patent/WO2012067766A2/en
Publication of JP2013543280A publication Critical patent/JP2013543280A/ja
Publication of JP2013543280A5 publication Critical patent/JP2013543280A5/ja
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Publication of JP6132770B2 publication Critical patent/JP6132770B2/ja
Expired - Fee Related legal-status Critical Current
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JP2013539854A 2010-11-18 2011-10-25 ポリシラザン接合層を含む発光ダイオードコンポーネント Expired - Fee Related JP6132770B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US41511510P 2010-11-18 2010-11-18
US61/415,115 2010-11-18
PCT/US2011/057635 WO2012067766A2 (en) 2010-11-18 2011-10-25 Light emitting diode component comprising polysilazane bonding layer

Publications (3)

Publication Number Publication Date
JP2013543280A JP2013543280A (ja) 2013-11-28
JP2013543280A5 true JP2013543280A5 (enExample) 2014-12-18
JP6132770B2 JP6132770B2 (ja) 2017-05-24

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JP2013539854A Expired - Fee Related JP6132770B2 (ja) 2010-11-18 2011-10-25 ポリシラザン接合層を含む発光ダイオードコンポーネント

Country Status (7)

Country Link
US (1) US9041034B2 (enExample)
EP (1) EP2641277A4 (enExample)
JP (1) JP6132770B2 (enExample)
KR (1) KR20130128420A (enExample)
CN (1) CN103222076B (enExample)
TW (1) TWI581456B (enExample)
WO (1) WO2012067766A2 (enExample)

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