KR20130128420A - 폴리실라잔 결합층을 포함하는 발광 다이오드 성분 - Google Patents

폴리실라잔 결합층을 포함하는 발광 다이오드 성분 Download PDF

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Publication number
KR20130128420A
KR20130128420A KR1020137015558A KR20137015558A KR20130128420A KR 20130128420 A KR20130128420 A KR 20130128420A KR 1020137015558 A KR1020137015558 A KR 1020137015558A KR 20137015558 A KR20137015558 A KR 20137015558A KR 20130128420 A KR20130128420 A KR 20130128420A
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KR
South Korea
Prior art keywords
led
component
wavelength converter
semiconductor
light emitting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
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KR1020137015558A
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English (en)
Korean (ko)
Inventor
구오핑 마오
스테펜 제이 즈나메로스키
유 양
테리 엘 스미스
Original Assignee
쓰리엠 이노베이티브 프로퍼티즈 컴파니
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Publication of KR20130128420A publication Critical patent/KR20130128420A/ko
Abandoned legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8511—Wavelength conversion means characterised by their material, e.g. binder
    • H10H20/8512—Wavelength conversion materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/034—Manufacture or treatment of coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0361—Manufacture or treatment of packages of wavelength conversion means

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  • Led Device Packages (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Optical Filters (AREA)
KR1020137015558A 2010-11-18 2011-10-25 폴리실라잔 결합층을 포함하는 발광 다이오드 성분 Abandoned KR20130128420A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US41511510P 2010-11-18 2010-11-18
US61/415,115 2010-11-18
PCT/US2011/057635 WO2012067766A2 (en) 2010-11-18 2011-10-25 Light emitting diode component comprising polysilazane bonding layer

Publications (1)

Publication Number Publication Date
KR20130128420A true KR20130128420A (ko) 2013-11-26

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020137015558A Abandoned KR20130128420A (ko) 2010-11-18 2011-10-25 폴리실라잔 결합층을 포함하는 발광 다이오드 성분

Country Status (7)

Country Link
US (1) US9041034B2 (enExample)
EP (1) EP2641277A4 (enExample)
JP (1) JP6132770B2 (enExample)
KR (1) KR20130128420A (enExample)
CN (1) CN103222076B (enExample)
TW (1) TWI581456B (enExample)
WO (1) WO2012067766A2 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
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WO2017078474A1 (ko) * 2015-11-06 2017-05-11 엘지이노텍 주식회사 발광패키지 및 이를 포함하는 차량용 조명장치
KR20220139388A (ko) * 2020-02-14 2022-10-14 에이엠에스-오스람 인터내셔널 게엠베하 파장 변환기, 이의 제조 방법 및 이 엘리먼트를 포함하는 발광 디바이스

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DE102011100728A1 (de) * 2011-05-06 2012-11-08 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauelement
US20140217457A1 (en) * 2011-05-25 2014-08-07 Wavesquare Inc. Light-emitting element chip and manufacturing method therefor
WO2014024068A2 (en) * 2012-08-06 2014-02-13 Koninklijke Philips N.V. Highly stable qds-composites for solid state lighting and the method of making them through initiator-free polymerization
DE102012108939A1 (de) * 2012-09-21 2014-03-27 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement umfassend ein transparentes Auskoppelelement
DE102012217776A1 (de) * 2012-09-28 2014-06-12 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines optoelektronischen Bauelements
EP3118904B1 (en) * 2013-07-18 2023-07-05 Lumileds LLC Dicing a wafer of light emitting semiconductor devices
KR20160035581A (ko) * 2013-07-19 2016-03-31 에이제트 일렉트로닉 머티어리얼스 (룩셈부르크) 에스.에이.알.엘. 발광다이오드를 위한 봉지재
TWI722242B (zh) * 2013-07-29 2021-03-21 晶元光電股份有限公司 一種半導體裝置
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TWI766580B (zh) * 2013-07-29 2022-06-01 晶元光電股份有限公司 一種半導體裝置
US9935246B2 (en) 2013-12-30 2018-04-03 Cree, Inc. Silazane-containing materials for light emitting diodes
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WO2015128460A1 (en) * 2014-02-28 2015-09-03 Az Electronic Materials (Germany) Gmbh Hybrid material for optoelectronic applications
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KR102311677B1 (ko) 2014-08-13 2021-10-12 삼성전자주식회사 반도체소자 및 그 제조방법
JP7071118B2 (ja) * 2014-08-19 2022-05-18 ルミレッズ ホールディング ベーフェー ダイレベルのレーザリフトオフ中の機械的損傷を減少させるサファイアコレクタ
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WO2017057454A1 (ja) * 2015-09-30 2017-04-06 東レ株式会社 発光装置の製造方法および表示装置の製造方法
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EP3485520B1 (en) 2016-07-18 2022-01-26 Merck Patent GmbH Formulation for an led encapsulation material
JP6911541B2 (ja) 2017-05-31 2021-07-28 セイコーエプソン株式会社 発光装置およびプロジェクター
DE102017124559B4 (de) * 2017-10-20 2024-05-08 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Epitaxie-Wellenlängenkonversionselement, Licht emittierendes Halbleiterbauelement sowie Verfahren zur Herstellung des Epitaxie-Wellenlängenkonversionselements und des Licht emittierenden Halbleiterbauelements
EP3803976B1 (en) 2018-05-24 2024-05-22 Lumiode, Inc. Led display structures and fabrication of same
WO2020083717A1 (en) * 2018-10-22 2020-04-30 Lumileds Holding B.V. A method of manufacturing a light converting device
US11380252B2 (en) 2018-12-21 2022-07-05 Lumiode, Inc. Addressing for emissive displays

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017078474A1 (ko) * 2015-11-06 2017-05-11 엘지이노텍 주식회사 발광패키지 및 이를 포함하는 차량용 조명장치
US10527231B2 (en) 2015-11-06 2020-01-07 Lg Innotek Co., Ltd. Light emitting package and vehicle lighting device comprising same
KR20220139388A (ko) * 2020-02-14 2022-10-14 에이엠에스-오스람 인터내셔널 게엠베하 파장 변환기, 이의 제조 방법 및 이 엘리먼트를 포함하는 발광 디바이스

Also Published As

Publication number Publication date
US20130221393A1 (en) 2013-08-29
JP2013543280A (ja) 2013-11-28
CN103222076B (zh) 2017-10-27
TW201232811A (en) 2012-08-01
CN103222076A (zh) 2013-07-24
WO2012067766A3 (en) 2012-07-12
TWI581456B (zh) 2017-05-01
WO2012067766A2 (en) 2012-05-24
EP2641277A4 (en) 2016-06-15
US9041034B2 (en) 2015-05-26
EP2641277A2 (en) 2013-09-25
JP6132770B2 (ja) 2017-05-24

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