CN103222076B - 包含聚硅氮烷接合层的发光二极管部件 - Google Patents

包含聚硅氮烷接合层的发光二极管部件 Download PDF

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Publication number
CN103222076B
CN103222076B CN201180055356.XA CN201180055356A CN103222076B CN 103222076 B CN103222076 B CN 103222076B CN 201180055356 A CN201180055356 A CN 201180055356A CN 103222076 B CN103222076 B CN 103222076B
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CN
China
Prior art keywords
led
bonding layer
polysilazane
wavelength
emitting diode
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Expired - Fee Related
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CN201180055356.XA
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English (en)
Chinese (zh)
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CN103222076A (zh
Inventor
毛国平
S·J·兹纳默洛斯基
杨宇
T·L·史密斯
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3M Innovative Properties Co
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3M Innovative Properties Co
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8511—Wavelength conversion means characterised by their material, e.g. binder
    • H10H20/8512—Wavelength conversion materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/034—Manufacture or treatment of coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0361—Manufacture or treatment of packages of wavelength conversion means

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  • Led Device Packages (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Optical Filters (AREA)
CN201180055356.XA 2010-11-18 2011-10-25 包含聚硅氮烷接合层的发光二极管部件 Expired - Fee Related CN103222076B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US41511510P 2010-11-18 2010-11-18
US61/415,115 2010-11-18
PCT/US2011/057635 WO2012067766A2 (en) 2010-11-18 2011-10-25 Light emitting diode component comprising polysilazane bonding layer

Publications (2)

Publication Number Publication Date
CN103222076A CN103222076A (zh) 2013-07-24
CN103222076B true CN103222076B (zh) 2017-10-27

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CN201180055356.XA Expired - Fee Related CN103222076B (zh) 2010-11-18 2011-10-25 包含聚硅氮烷接合层的发光二极管部件

Country Status (7)

Country Link
US (1) US9041034B2 (enExample)
EP (1) EP2641277A4 (enExample)
JP (1) JP6132770B2 (enExample)
KR (1) KR20130128420A (enExample)
CN (1) CN103222076B (enExample)
TW (1) TWI581456B (enExample)
WO (1) WO2012067766A2 (enExample)

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DE102012108939A1 (de) * 2012-09-21 2014-03-27 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement umfassend ein transparentes Auskoppelelement
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EP3118904B1 (en) * 2013-07-18 2023-07-05 Lumileds LLC Dicing a wafer of light emitting semiconductor devices
KR20160035581A (ko) * 2013-07-19 2016-03-31 에이제트 일렉트로닉 머티어리얼스 (룩셈부르크) 에스.에이.알.엘. 발광다이오드를 위한 봉지재
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WO2015128460A1 (en) * 2014-02-28 2015-09-03 Az Electronic Materials (Germany) Gmbh Hybrid material for optoelectronic applications
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KR102311677B1 (ko) 2014-08-13 2021-10-12 삼성전자주식회사 반도체소자 및 그 제조방법
JP7071118B2 (ja) * 2014-08-19 2022-05-18 ルミレッズ ホールディング ベーフェー ダイレベルのレーザリフトオフ中の機械的損傷を減少させるサファイアコレクタ
EP3295479B1 (en) * 2015-05-13 2018-09-26 Lumileds Holding B.V. Sapphire collector for reducing mechanical damage during die level laser lift-off
WO2017057454A1 (ja) * 2015-09-30 2017-04-06 東レ株式会社 発光装置の製造方法および表示装置の製造方法
KR102499548B1 (ko) * 2015-11-06 2023-03-03 엘지이노텍 주식회사 발광패키지 및 이를 포함하는 차량용 헤드램프
JP6957594B2 (ja) 2016-07-18 2021-11-02 メルク、パテント、ゲゼルシャフト、ミット、ベシュレンクテル、ハフツングＭｅｒｃｋ Ｐａｔｅｎｔ ＧｍｂＨ Ｌｅｄ封止材料のための配合物
EP3485520B1 (en) 2016-07-18 2022-01-26 Merck Patent GmbH Formulation for an led encapsulation material
JP6911541B2 (ja) 2017-05-31 2021-07-28 セイコーエプソン株式会社 発光装置およびプロジェクター
DE102017124559B4 (de) * 2017-10-20 2024-05-08 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Epitaxie-Wellenlängenkonversionselement, Licht emittierendes Halbleiterbauelement sowie Verfahren zur Herstellung des Epitaxie-Wellenlängenkonversionselements und des Licht emittierenden Halbleiterbauelements
EP3803976B1 (en) 2018-05-24 2024-05-22 Lumiode, Inc. Led display structures and fabrication of same
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Also Published As

Publication number Publication date
US20130221393A1 (en) 2013-08-29
JP2013543280A (ja) 2013-11-28
TW201232811A (en) 2012-08-01
CN103222076A (zh) 2013-07-24
WO2012067766A3 (en) 2012-07-12
KR20130128420A (ko) 2013-11-26
TWI581456B (zh) 2017-05-01
WO2012067766A2 (en) 2012-05-24
EP2641277A4 (en) 2016-06-15
US9041034B2 (en) 2015-05-26
EP2641277A2 (en) 2013-09-25
JP6132770B2 (ja) 2017-05-24

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