JP6132770B2 - ポリシラザン接合層を含む発光ダイオードコンポーネント - Google Patents

ポリシラザン接合層を含む発光ダイオードコンポーネント Download PDF

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Publication number
JP6132770B2
JP6132770B2 JP2013539854A JP2013539854A JP6132770B2 JP 6132770 B2 JP6132770 B2 JP 6132770B2 JP 2013539854 A JP2013539854 A JP 2013539854A JP 2013539854 A JP2013539854 A JP 2013539854A JP 6132770 B2 JP6132770 B2 JP 6132770B2
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polysilazane
led
wavelength converter
semiconductor
bonding layer
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Expired - Fee Related
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JP2013539854A
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Japanese (ja)
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JP2013543280A (ja
JP2013543280A5 (enExample
Inventor
グオピン マオ，
グオピン マオ，
スティーブン ジェー． ズナメロスキー，
スティーブン ジェー． ズナメロスキー，
ユー ヤン，
ユー ヤン，
テリー エル． スミス，
テリー エル． スミス，
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3M Innovative Properties Co
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3M Innovative Properties Co
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Publication of JP2013543280A5 publication Critical patent/JP2013543280A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8511—Wavelength conversion means characterised by their material, e.g. binder
    • H10H20/8512—Wavelength conversion materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/034—Manufacture or treatment of coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0361—Manufacture or treatment of packages of wavelength conversion means

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  • Led Device Packages (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Optical Filters (AREA)
JP2013539854A 2010-11-18 2011-10-25 ポリシラザン接合層を含む発光ダイオードコンポーネント Expired - Fee Related JP6132770B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US41511510P 2010-11-18 2010-11-18
US61/415,115 2010-11-18
PCT/US2011/057635 WO2012067766A2 (en) 2010-11-18 2011-10-25 Light emitting diode component comprising polysilazane bonding layer

Publications (3)

Publication Number Publication Date
JP2013543280A JP2013543280A (ja) 2013-11-28
JP2013543280A5 JP2013543280A5 (enExample) 2014-12-18
JP6132770B2 true JP6132770B2 (ja) 2017-05-24

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Country Status (7)

Country Link
US (1) US9041034B2 (enExample)
EP (1) EP2641277A4 (enExample)
JP (1) JP6132770B2 (enExample)
KR (1) KR20130128420A (enExample)
CN (1) CN103222076B (enExample)
TW (1) TWI581456B (enExample)
WO (1) WO2012067766A2 (enExample)

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JP6911541B2 (ja) 2017-05-31 2021-07-28 セイコーエプソン株式会社 発光装置およびプロジェクター
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Publication number Publication date
US20130221393A1 (en) 2013-08-29
JP2013543280A (ja) 2013-11-28
CN103222076B (zh) 2017-10-27
TW201232811A (en) 2012-08-01
CN103222076A (zh) 2013-07-24
WO2012067766A3 (en) 2012-07-12
KR20130128420A (ko) 2013-11-26
TWI581456B (zh) 2017-05-01
WO2012067766A2 (en) 2012-05-24
EP2641277A4 (en) 2016-06-15
US9041034B2 (en) 2015-05-26
EP2641277A2 (en) 2013-09-25

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