TWI581456B - 具有聚矽氮烷黏結層之發光二極體組件 - Google Patents

具有聚矽氮烷黏結層之發光二極體組件 Download PDF

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Publication number
TWI581456B
TWI581456B TW100141513A TW100141513A TWI581456B TW I581456 B TWI581456 B TW I581456B TW 100141513 A TW100141513 A TW 100141513A TW 100141513 A TW100141513 A TW 100141513A TW I581456 B TWI581456 B TW I581456B
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TW
Taiwan
Prior art keywords
led
component
light
wavelength converter
semiconductor
Prior art date
Application number
TW100141513A
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English (en)
Chinese (zh)
Other versions
TW201232811A (en
Inventor
毛國平
楊宇
史蒂芬 約翰 納莫羅斯基
泰瑞 李 史密斯
Original Assignee
３Ｍ新設資產公司
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Application filed by ３Ｍ新設資產公司 filed Critical ３Ｍ新設資產公司
Publication of TW201232811A publication Critical patent/TW201232811A/zh
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Publication of TWI581456B publication Critical patent/TWI581456B/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8511—Wavelength conversion means characterised by their material, e.g. binder
    • H10H20/8512—Wavelength conversion materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/034—Manufacture or treatment of coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0361—Manufacture or treatment of packages of wavelength conversion means

Landscapes

  • Led Device Packages (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Optical Filters (AREA)
TW100141513A 2010-11-18 2011-11-15 具有聚矽氮烷黏結層之發光二極體組件 TWI581456B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US41511510P 2010-11-18 2010-11-18

Publications (2)

Publication Number Publication Date
TW201232811A TW201232811A (en) 2012-08-01
TWI581456B true TWI581456B (zh) 2017-05-01

Family

ID=46084569

Family Applications (1)

Application Number Title Priority Date Filing Date
TW100141513A TWI581456B (zh) 2010-11-18 2011-11-15 具有聚矽氮烷黏結層之發光二極體組件

Country Status (7)

Country Link
US (1) US9041034B2 (enExample)
EP (1) EP2641277A4 (enExample)
JP (1) JP6132770B2 (enExample)
KR (1) KR20130128420A (enExample)
CN (1) CN103222076B (enExample)
TW (1) TWI581456B (enExample)
WO (1) WO2012067766A2 (enExample)

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DE102012108939A1 (de) * 2012-09-21 2014-03-27 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement umfassend ein transparentes Auskoppelelement
DE102012217776A1 (de) * 2012-09-28 2014-06-12 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines optoelektronischen Bauelements
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KR101767078B1 (ko) 2013-07-29 2017-08-10 에피스타 코포레이션 반도체 소자를 선택적으로 전이하는 방법
TWI766580B (zh) * 2013-07-29 2022-06-01 晶元光電股份有限公司 一種半導體裝置
US9935246B2 (en) 2013-12-30 2018-04-03 Cree, Inc. Silazane-containing materials for light emitting diodes
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WO2015128460A1 (en) * 2014-02-28 2015-09-03 Az Electronic Materials (Germany) Gmbh Hybrid material for optoelectronic applications
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KR102311677B1 (ko) 2014-08-13 2021-10-12 삼성전자주식회사 반도체소자 및 그 제조방법
JP7071118B2 (ja) * 2014-08-19 2022-05-18 ルミレッズ ホールディング ベーフェー ダイレベルのレーザリフトオフ中の機械的損傷を減少させるサファイアコレクタ
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WO2017057454A1 (ja) * 2015-09-30 2017-04-06 東レ株式会社 発光装置の製造方法および表示装置の製造方法
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JP6957594B2 (ja) 2016-07-18 2021-11-02 メルク、パテント、ゲゼルシャフト、ミット、ベシュレンクテル、ハフツングＭｅｒｃｋ Ｐａｔｅｎｔ ＧｍｂＨ Ｌｅｄ封止材料のための配合物
EP3485520B1 (en) 2016-07-18 2022-01-26 Merck Patent GmbH Formulation for an led encapsulation material
JP6911541B2 (ja) 2017-05-31 2021-07-28 セイコーエプソン株式会社 発光装置およびプロジェクター
DE102017124559B4 (de) * 2017-10-20 2024-05-08 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Epitaxie-Wellenlängenkonversionselement, Licht emittierendes Halbleiterbauelement sowie Verfahren zur Herstellung des Epitaxie-Wellenlängenkonversionselements und des Licht emittierenden Halbleiterbauelements
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Also Published As

Publication number Publication date
US20130221393A1 (en) 2013-08-29
JP2013543280A (ja) 2013-11-28
CN103222076B (zh) 2017-10-27
TW201232811A (en) 2012-08-01
CN103222076A (zh) 2013-07-24
WO2012067766A3 (en) 2012-07-12
KR20130128420A (ko) 2013-11-26
WO2012067766A2 (en) 2012-05-24
EP2641277A4 (en) 2016-06-15
US9041034B2 (en) 2015-05-26
EP2641277A2 (en) 2013-09-25
JP6132770B2 (ja) 2017-05-24

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