TWI581456B - 具有聚矽氮烷黏結層之發光二極體組件 - Google Patents
具有聚矽氮烷黏結層之發光二極體組件 Download PDFInfo
- Publication number
- TWI581456B TWI581456B TW100141513A TW100141513A TWI581456B TW I581456 B TWI581456 B TW I581456B TW 100141513 A TW100141513 A TW 100141513A TW 100141513 A TW100141513 A TW 100141513A TW I581456 B TWI581456 B TW I581456B
- Authority
- TW
- Taiwan
- Prior art keywords
- led
- component
- light
- wavelength converter
- semiconductor
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/851—Wavelength conversion means
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/851—Wavelength conversion means
- H10H20/8511—Wavelength conversion means characterised by their material, e.g. binder
- H10H20/8512—Wavelength conversion materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
- H10H20/018—Bonding of wafers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/034—Manufacture or treatment of coatings
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/036—Manufacture or treatment of packages
- H10H20/0361—Manufacture or treatment of packages of wavelength conversion means
Landscapes
- Led Device Packages (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Optical Filters (AREA)
- Adhesives Or Adhesive Processes (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US41511510P | 2010-11-18 | 2010-11-18 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201232811A TW201232811A (en) | 2012-08-01 |
| TWI581456B true TWI581456B (zh) | 2017-05-01 |
Family
ID=46084569
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW100141513A TWI581456B (zh) | 2010-11-18 | 2011-11-15 | 具有聚矽氮烷黏結層之發光二極體組件 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US9041034B2 (enExample) |
| EP (1) | EP2641277A4 (enExample) |
| JP (1) | JP6132770B2 (enExample) |
| KR (1) | KR20130128420A (enExample) |
| CN (1) | CN103222076B (enExample) |
| TW (1) | TWI581456B (enExample) |
| WO (1) | WO2012067766A2 (enExample) |
Families Citing this family (29)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102010034923A1 (de) * | 2010-08-20 | 2012-02-23 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung eines Schichtverbunds aus einer Lumineszenzkonversionsschicht und einer Streuschicht |
| DE102011100728A1 (de) | 2011-05-06 | 2012-11-08 | Osram Opto Semiconductors Gmbh | Optoelektronisches Halbleiterbauelement |
| WO2012160604A1 (ja) * | 2011-05-25 | 2012-11-29 | Dowaエレクトロニクス株式会社 | 発光素子チップ及びその製造方法 |
| US9064764B2 (en) | 2012-03-22 | 2015-06-23 | Sionyx, Inc. | Pixel isolation elements, devices, and associated methods |
| CN104736662B (zh) | 2012-08-06 | 2017-07-18 | 皇家飞利浦有限公司 | 用于固态照明的高度稳定qd‑复合物和通过无引发剂的聚合制作所述qd‑复合物的方法 |
| DE102012108939A1 (de) * | 2012-09-21 | 2014-03-27 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement umfassend ein transparentes Auskoppelelement |
| DE102012217776A1 (de) * | 2012-09-28 | 2014-06-12 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung eines optoelektronischen Bauelements |
| KR20160032221A (ko) * | 2013-07-18 | 2016-03-23 | 코닌클리케 필립스 엔.브이. | 발광 디바이스들의 웨이퍼의 다이싱 |
| CN105392825A (zh) * | 2013-07-19 | 2016-03-09 | Az电子材料卢森堡有限公司 | 用于发光二极管的封装材料 |
| TWI766580B (zh) * | 2013-07-29 | 2022-06-01 | 晶元光電股份有限公司 | 一種半導體裝置 |
| DE112013007281B4 (de) | 2013-07-29 | 2021-07-01 | Epistar Corporation | Verfahren zum selektiven Transferieren von Halbleitervorrichtungen |
| TWI722242B (zh) * | 2013-07-29 | 2021-03-21 | 晶元光電股份有限公司 | 一種半導體裝置 |
| US9935246B2 (en) | 2013-12-30 | 2018-04-03 | Cree, Inc. | Silazane-containing materials for light emitting diodes |
| US9252121B2 (en) * | 2014-01-23 | 2016-02-02 | International Business Machines Corporation | Thermal interface material on package |
| KR20160127041A (ko) * | 2014-02-28 | 2016-11-02 | 에이제트 일렉트로닉 머티어리얼스 (룩셈부르크) 에스.에이.알.엘. | 광전자 응용제품을 위한 하이브리드 재료 |
| EP2913355A1 (en) * | 2014-02-28 | 2015-09-02 | AZ Electronic Materials (Germany) GmbH | Hybrid material for optoelectronic applications |
| KR102311677B1 (ko) | 2014-08-13 | 2021-10-12 | 삼성전자주식회사 | 반도체소자 및 그 제조방법 |
| CN111496379B (zh) * | 2014-08-19 | 2022-08-26 | 亮锐控股有限公司 | 用于减少在管芯级激光剥离期间所受机械损伤的蓝宝石收集器 |
| KR102572643B1 (ko) * | 2015-05-13 | 2023-08-31 | 루미리즈 홀딩 비.브이. | 다이 레벨의 레이저 리프트-오프 중에 기계적 손상을 줄이기 위한 사파이어 수집기 |
| WO2017057454A1 (ja) * | 2015-09-30 | 2017-04-06 | 東レ株式会社 | 発光装置の製造方法および表示装置の製造方法 |
| KR102499548B1 (ko) | 2015-11-06 | 2023-03-03 | 엘지이노텍 주식회사 | 발광패키지 및 이를 포함하는 차량용 헤드램프 |
| EP3484950B1 (en) | 2016-07-18 | 2021-09-15 | Merck Patent GmbH | Formulation for led encapsulation material |
| EP3485520B1 (en) | 2016-07-18 | 2022-01-26 | Merck Patent GmbH | Formulation for an led encapsulation material |
| JP6911541B2 (ja) | 2017-05-31 | 2021-07-28 | セイコーエプソン株式会社 | 発光装置およびプロジェクター |
| DE102017124559B4 (de) * | 2017-10-20 | 2024-05-08 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Epitaxie-Wellenlängenkonversionselement, Licht emittierendes Halbleiterbauelement sowie Verfahren zur Herstellung des Epitaxie-Wellenlängenkonversionselements und des Licht emittierenden Halbleiterbauelements |
| WO2019226788A1 (en) | 2018-05-24 | 2019-11-28 | Lumiode, Inc. | Led display structures and fabrication of same |
| WO2020083717A1 (en) * | 2018-10-22 | 2020-04-30 | Lumileds Holding B.V. | A method of manufacturing a light converting device |
| EP3899920A4 (en) | 2018-12-21 | 2022-09-28 | Lumiode, Inc. | ADDRESSING FOR EMISSIVE INDICATORS |
| US11584882B2 (en) * | 2020-02-14 | 2023-02-21 | Osram Opto Semiconductors Gmbh | Wavelength converter; method of its making and light-emitting device incorporating the element |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6781148B2 (en) * | 2000-07-24 | 2004-08-24 | Tdk Corporation | Light emitting device |
| US7170087B2 (en) * | 2003-08-01 | 2007-01-30 | Kabushiki Kaisha Toyota Jidoshokki | EL device and method for manufacturing the same |
| US20100167002A1 (en) * | 2008-12-30 | 2010-07-01 | Vitex Systems, Inc. | Method for encapsulating environmentally sensitive devices |
| US20100230691A1 (en) * | 2006-03-27 | 2010-09-16 | Mitsuhiro Inoue | Ferrous-Metal-Alkaline-Earth-Metal Silicate Mixed Crystal Phosphor and Light Emitting Device using The Same |
| US20100283074A1 (en) * | 2007-10-08 | 2010-11-11 | Kelley Tommie W | Light emitting diode with bonded semiconductor wavelength converter |
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| US3519516A (en) | 1967-02-17 | 1970-07-07 | Dmitry Yakovlevich Zhinkin | Method for bonding siloxane rubberbase vulcanizates using a polysilazane adhesive |
| US4642126A (en) | 1985-02-11 | 1987-02-10 | Norton Company | Coated abrasives with rapidly curable adhesives and controllable curvature |
| US4652274A (en) | 1985-08-07 | 1987-03-24 | Minnesota Mining And Manufacturing Company | Coated abrasive product having radiation curable binder |
| CA1323949C (en) | 1987-04-02 | 1993-11-02 | Michael C. Palazzotto | Ternary photoinitiator system for addition polymerization |
| US4929704A (en) * | 1988-12-20 | 1990-05-29 | Hercules Incorporated | Isocyanate- and isothiocyanate-modified polysilazane ceramic precursors |
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| US5616650A (en) | 1993-11-05 | 1997-04-01 | Lanxide Technology Company, Lp | Metal-nitrogen polymer compositions comprising organic electrophiles |
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| JPH08236274A (ja) * | 1994-12-28 | 1996-09-13 | Tonen Corp | エレクトロルミネッセンス素子 |
| US5801073A (en) * | 1995-05-25 | 1998-09-01 | Charles Stark Draper Laboratory | Net-shape ceramic processing for electronic devices and packages |
| JP3771298B2 (ja) * | 1995-05-30 | 2006-04-26 | クラリアント インターナショナル リミティド | ポリシラザン組成物 |
| DE69606942T2 (de) * | 1995-09-25 | 2000-10-05 | Dow Corning Corp., Midland | Verwendung von präkeramischen Polymeren als Klebstoffe für Elektronik |
| US6268432B1 (en) * | 1998-10-01 | 2001-07-31 | Dow Corning Toray Silicone Co. Ltd. | Filler/adhesive agent for display units containing a curable silicone composition |
| JP3503131B2 (ja) * | 1999-06-03 | 2004-03-02 | サンケン電気株式会社 | 半導体発光装置 |
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| JP2003118030A (ja) * | 2001-10-16 | 2003-04-23 | Asahi Glass Co Ltd | ガスバリヤ性有機基材およびそれを用いたエレクトロルミネッセンス素子 |
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| JP2007042686A (ja) * | 2005-07-29 | 2007-02-15 | Toshiba Lighting & Technology Corp | 発光ダイオード装置 |
| EP2036135A4 (en) | 2006-06-12 | 2013-11-13 | 3M Innovative Properties Co | LED ARRANGEMENT WITH REASSEMBLING SEMICONDUCTOR CONSTRUCTION AND CONVERGING OPTICAL ELEMENT |
| WO2008083188A2 (en) | 2006-12-29 | 2008-07-10 | 3M Innovative Properties Company | Led light source with converging extractor in an optical element |
| KR101380062B1 (ko) | 2007-04-10 | 2014-04-01 | 신에쓰 가가꾸 고교 가부시끼가이샤 | 형광체 함유 접착성 실리콘 조성물, 상기 조성물로 이루어지는 조성물 시트, 및 상기 시트를 사용하는 발광장치의 제조 방법 |
| US20120181919A1 (en) | 2008-08-27 | 2012-07-19 | Osram Sylvania Inc. | Luminescent Ceramic Composite Converter and Method of Making the Same |
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| JP5477374B2 (ja) * | 2009-03-27 | 2014-04-23 | コニカミノルタ株式会社 | 蛍光体部材、蛍光体部材の製造方法、及び照明装置 |
| CN102460741A (zh) * | 2009-05-05 | 2012-05-16 | 3M创新有限公司 | 具有增大的提取效率的再发光半导体构造 |
| US9293622B2 (en) * | 2009-05-05 | 2016-03-22 | 3M Innovative Properties Company | Re-emitting semiconductor carrier devices for use with LEDs and methods of manufacture |
-
2011
- 2011-10-25 US US13/876,373 patent/US9041034B2/en active Active
- 2011-10-25 CN CN201180055356.XA patent/CN103222076B/zh not_active Expired - Fee Related
- 2011-10-25 KR KR1020137015558A patent/KR20130128420A/ko not_active Abandoned
- 2011-10-25 EP EP11841084.4A patent/EP2641277A4/en not_active Withdrawn
- 2011-10-25 WO PCT/US2011/057635 patent/WO2012067766A2/en not_active Ceased
- 2011-10-25 JP JP2013539854A patent/JP6132770B2/ja not_active Expired - Fee Related
- 2011-11-15 TW TW100141513A patent/TWI581456B/zh not_active IP Right Cessation
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6781148B2 (en) * | 2000-07-24 | 2004-08-24 | Tdk Corporation | Light emitting device |
| US7170087B2 (en) * | 2003-08-01 | 2007-01-30 | Kabushiki Kaisha Toyota Jidoshokki | EL device and method for manufacturing the same |
| US20100230691A1 (en) * | 2006-03-27 | 2010-09-16 | Mitsuhiro Inoue | Ferrous-Metal-Alkaline-Earth-Metal Silicate Mixed Crystal Phosphor and Light Emitting Device using The Same |
| US20100283074A1 (en) * | 2007-10-08 | 2010-11-11 | Kelley Tommie W | Light emitting diode with bonded semiconductor wavelength converter |
| US20100167002A1 (en) * | 2008-12-30 | 2010-07-01 | Vitex Systems, Inc. | Method for encapsulating environmentally sensitive devices |
Also Published As
| Publication number | Publication date |
|---|---|
| US20130221393A1 (en) | 2013-08-29 |
| EP2641277A4 (en) | 2016-06-15 |
| EP2641277A2 (en) | 2013-09-25 |
| JP2013543280A (ja) | 2013-11-28 |
| KR20130128420A (ko) | 2013-11-26 |
| CN103222076A (zh) | 2013-07-24 |
| JP6132770B2 (ja) | 2017-05-24 |
| CN103222076B (zh) | 2017-10-27 |
| WO2012067766A2 (en) | 2012-05-24 |
| TW201232811A (en) | 2012-08-01 |
| US9041034B2 (en) | 2015-05-26 |
| WO2012067766A3 (en) | 2012-07-12 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |