JP2011194509A - 研磨装置、研磨パッドおよび研磨情報管理システム - Google Patents
研磨装置、研磨パッドおよび研磨情報管理システム Download PDFInfo
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- 238000005498 polishing Methods 0.000 title claims abstract description 213
- 238000004891 communication Methods 0.000 claims abstract description 54
- 238000003860 storage Methods 0.000 claims description 32
- 238000001514 detection method Methods 0.000 claims description 18
- 238000004519 manufacturing process Methods 0.000 claims description 11
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- 238000000034 method Methods 0.000 description 8
- 230000005540 biological transmission Effects 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 5
- 239000002002 slurry Substances 0.000 description 5
- 238000004364 calculation method Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 230000005674 electromagnetic induction Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000007517 polishing process Methods 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000006061 abrasive grain Substances 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
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- 230000010354 integration Effects 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
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- 230000000704 physical effect Effects 0.000 description 1
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- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/005—Control means for lapping machines or devices
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/005—Control means for lapping machines or devices
- B24B37/015—Temperature control
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
- B24B49/10—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation involving electrical means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
- H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
- H01L21/461—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
Abstract
【解決手段】研磨パッド1内に、センサ7と、前記センサ7により得られる検出情報を記憶するメモリ9と、電源部11の駆動により外部と非接触で通信する通信手段(コントロールIC10)とが埋設されている。上記構成の研磨パッド1と、研磨パッドに備える通信手段10と非接触で通信が可能な通信部6とを含んで研磨情報管理システムが構成される。さらに、研磨装置は、上記構成の研磨パッド1と、該研磨パッドに備える通信手段10と非接触で送受信が可能な通信部6とを有する。
【選択図】 図1
Description
寿命表示器をさらに備え、
前記情報記憶モジュールは、前記メモリに記憶している前記検出情報に基づいて、前記研磨パッドの寿命判定を行い、その寿命判定結果を前記寿命表示器に表示する、
のがさらに好ましい。そうすれば、研磨パッドの寿命を精度高くユーザに報知することが可能になる。
この構成は、研磨パッド1の使用期間では研磨パッド1に加速度が生じている、という知見に基づいて、研磨パッド1の寿命を判断する。すなわち、コントロールIC10は、加速度センサ7、7aが所定値以上の加速度を検知している時間長の総量をカウントアップすることで、研磨パッド1の総使用時間を計測してメモリ9に記憶したうえで、記憶している総使用時間が予め設定しておいた時間長(研磨パッド1の寿命に相当する)に達するか否かを判断し、達したと判断すると、研磨パッド1は寿命に到達したと判定する。
この構成は、研磨パッド1の使用期間では研磨パッド1に圧力が生じている、という知見に基づいて研磨パッド1の寿命を判断する。すなわち、コントロールIC10は、圧力センサ7、7aが所定値以上の圧力を検知している時間長の総量をカウントアップすることで、研磨パッド1の総使用時間を計測してメモリ9に記憶する。メモリ9に記憶している総使用時間に基づいた寿命判定は加速度センサと同様である。
この構成は、研磨パッド1の使用期間では研磨パッド1に温度上昇が生じている、という知見に基づいて研磨パッド1の寿命を判断する。すなわち、コントロールIC10は、温度センサ7、7aが所定値以上の温度上昇を検知している時間長の総量をカウントアップすることで、研磨パッド1の総使用時間を計測してメモリ9に記憶する。メモリ9に記憶している総使用時間に基づいた寿命判定は加速度センサと同様である。
2 下定盤
3 上定盤
5 制御部
6 通信部
7 センサ
8 情報記憶モジュール
9 メモリ
10 コントロールIC(通信手段)
11 バッテリー
W ウェハ
Claims (7)
- センサと、前記センサにより得られる検出情報を記憶するメモリと、電源部と、外部と非接触で通信する通信手段とが設けられている、ことを特徴とする研磨パッド。
- 当該研磨パッドに埋め込まれる情報記憶モジュールを備え、
前記情報記憶モジュールには、前記メモリと前記電源部と前記通信手段とが設けられている、ことを特徴とする請求項1に記載の研磨パッド。 - 前記センサを少なくとも一種類備え、温度、圧力および回転数のうちの少なくともいずれか一つを検出対象とする、ことを特徴とする請求項1または2に記載の研磨パッド。
- 前記メモリは、当該研磨パッドが研磨装置に装着されてその研磨動作中に前記センサにより得られる検出情報のほか、当該研磨パッドの製造履歴と、前記研磨装置の作動条件とが格納される、ことを特徴とする請求項1ないし3のいずれかに記載の研磨パッド。
- 寿命表示器をさらに備え、
前記情報記憶モジュールは、前記メモリに記憶している前記検出情報に基づいて、前記研磨パッドの寿命判定を行い、その寿命判定結果を前記寿命表示器に表示する、
請求項1の研磨パッド。 - 請求項1ないし5のいずれかに記載の研磨パッドと、
前記研磨パッドに備える通信手段と非接触で通信が可能な通信部と、
を含むことを特徴とする研磨情報管理システム。 - 上定盤の下面に保持された被研磨物と、下定盤上に装着された研磨パッドとを接触加圧した状態で、前記被研磨物と前記研磨パッドとを相対的に摺動させて研磨を行う研磨装置において、
前記研磨パッドが、請求項1ないし5のいずれかに記載の研磨パッドであり、
前記研磨パッドに備える通信手段と非接触で通信が可能な通信部を有する、ことを特徴とする研磨装置。
Priority Applications (7)
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JP2010063699A JP5551479B2 (ja) | 2010-03-19 | 2010-03-19 | 研磨装置、研磨パッドおよび研磨情報管理システム |
US13/634,705 US9254545B2 (en) | 2010-03-19 | 2011-03-09 | Polishing apparatus, polishing pad, and polishing information management system |
KR1020127024348A KR101751091B1 (ko) | 2010-03-19 | 2011-03-09 | 연마 장치, 연마 패드 및 연마 정보 관리 시스템 |
EP11755851.0A EP2548696A4 (en) | 2010-03-19 | 2011-03-09 | Polishing apparatus, polishing pad, and polishing information management system |
PCT/JP2011/001379 WO2011114658A1 (ja) | 2010-03-19 | 2011-03-09 | 研磨装置、研磨パッドおよび研磨情報管理システム |
CN201180013609.7A CN102802871B (zh) | 2010-03-19 | 2011-03-09 | 研磨装置、研磨垫及研磨信息管理系统 |
TW100108059A TWI548487B (zh) | 2010-03-19 | 2011-03-10 | Grinding equipment, grinding pad and grinding information management system |
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JP2010063699A JP5551479B2 (ja) | 2010-03-19 | 2010-03-19 | 研磨装置、研磨パッドおよび研磨情報管理システム |
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JP5551479B2 JP5551479B2 (ja) | 2014-07-16 |
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US (1) | US9254545B2 (ja) |
EP (1) | EP2548696A4 (ja) |
JP (1) | JP5551479B2 (ja) |
KR (1) | KR101751091B1 (ja) |
CN (1) | CN102802871B (ja) |
TW (1) | TWI548487B (ja) |
WO (1) | WO2011114658A1 (ja) |
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CN110024087A (zh) * | 2016-12-02 | 2019-07-16 | 应用材料公司 | Rfid零件认证及处理部件的追踪 |
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JP6990980B2 (ja) | 2017-03-31 | 2022-01-12 | 株式会社荏原製作所 | 基板処理装置 |
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JP7045861B2 (ja) | 2018-01-17 | 2022-04-01 | 株式会社ディスコ | 支持基台 |
KR102614835B1 (ko) * | 2018-01-17 | 2023-12-15 | 가부시기가이샤 디스코 | 지지 기대 |
JP2019123050A (ja) * | 2018-01-17 | 2019-07-25 | 株式会社ディスコ | 支持基台 |
KR20190088008A (ko) * | 2018-01-17 | 2019-07-25 | 가부시기가이샤 디스코 | 지지 기대 |
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US9254545B2 (en) | 2016-02-09 |
WO2011114658A1 (ja) | 2011-09-22 |
KR20130012013A (ko) | 2013-01-30 |
TWI548487B (zh) | 2016-09-11 |
EP2548696A1 (en) | 2013-01-23 |
CN102802871A (zh) | 2012-11-28 |
TW201143980A (en) | 2011-12-16 |
JP5551479B2 (ja) | 2014-07-16 |
EP2548696A4 (en) | 2017-08-09 |
KR101751091B1 (ko) | 2017-06-26 |
CN102802871B (zh) | 2015-08-19 |
US20130052917A1 (en) | 2013-02-28 |
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