JP2011192973A - トランジスタ及びその作製方法 - Google Patents
トランジスタ及びその作製方法 Download PDFInfo
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- JP2011192973A JP2011192973A JP2011025791A JP2011025791A JP2011192973A JP 2011192973 A JP2011192973 A JP 2011192973A JP 2011025791 A JP2011025791 A JP 2011025791A JP 2011025791 A JP2011025791 A JP 2011025791A JP 2011192973 A JP2011192973 A JP 2011192973A
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- 238000004519 manufacturing process Methods 0.000 title claims description 25
- 239000004065 semiconductor Substances 0.000 claims abstract description 198
- 238000005530 etching Methods 0.000 claims abstract description 170
- 238000000034 method Methods 0.000 claims abstract description 55
- 239000010410 layer Substances 0.000 description 444
- 239000010408 film Substances 0.000 description 88
- 239000000758 substrate Substances 0.000 description 47
- 230000015572 biosynthetic process Effects 0.000 description 25
- 229910007541 Zn O Inorganic materials 0.000 description 19
- 239000000463 material Substances 0.000 description 17
- 239000007789 gas Substances 0.000 description 14
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 12
- 238000010438 heat treatment Methods 0.000 description 11
- 239000012298 atmosphere Substances 0.000 description 9
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 9
- 239000001301 oxygen Substances 0.000 description 9
- 229910052760 oxygen Inorganic materials 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 230000002349 favourable effect Effects 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 7
- 229910052733 gallium Inorganic materials 0.000 description 7
- 239000001257 hydrogen Substances 0.000 description 7
- 229910052739 hydrogen Inorganic materials 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- 239000011701 zinc Substances 0.000 description 7
- 229910044991 metal oxide Inorganic materials 0.000 description 6
- 150000004706 metal oxides Chemical class 0.000 description 6
- 229910052757 nitrogen Inorganic materials 0.000 description 6
- 229910052814 silicon oxide Inorganic materials 0.000 description 6
- 238000004544 sputter deposition Methods 0.000 description 6
- 239000000203 mixture Substances 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- 239000004020 conductor Substances 0.000 description 4
- 238000001678 elastic recoil detection analysis Methods 0.000 description 4
- 230000005684 electric field Effects 0.000 description 4
- 230000006870 function Effects 0.000 description 4
- 229910052738 indium Inorganic materials 0.000 description 4
- 238000000206 photolithography Methods 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- 229910019092 Mg-O Inorganic materials 0.000 description 3
- 229910019395 Mg—O Inorganic materials 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000012299 nitrogen atmosphere Substances 0.000 description 3
- 238000005001 rutherford backscattering spectroscopy Methods 0.000 description 3
- 238000000851 scanning transmission electron micrograph Methods 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 229910005191 Ga 2 O 3 Inorganic materials 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 230000007774 longterm Effects 0.000 description 2
- 229910052748 manganese Inorganic materials 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 108010083687 Ion Pumps Proteins 0.000 description 1
- 241000255777 Lepidoptera Species 0.000 description 1
- 229910020923 Sn-O Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000001413 cellular effect Effects 0.000 description 1
- 230000018044 dehydration Effects 0.000 description 1
- 238000006297 dehydration reaction Methods 0.000 description 1
- 238000006356 dehydrogenation reaction Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 238000000859 sublimation Methods 0.000 description 1
- 230000008022 sublimation Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
- H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32139—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer using masks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66969—Multistep manufacturing processes of devices having semiconductor bodies not comprising group 14 or group 13/15 materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
Abstract
【解決手段】例えば、ボトムゲートトップコンタクト構造のトランジスタを作製するに際して、第1の配線層を形成し、該第1の配線層を覆って第1の絶縁膜を形成し、該第1の絶縁膜上に半導体層を形成し、該半導体層上に導電膜を形成し、該導電膜に少なくとも2段階のエッチングを行って第2の配線層を離間させて形成し、前記2段階のエッチングが、少なくとも前記導電膜に対するエッチングレートが前記半導体層に対するエッチングレートより高い条件により行う第1のエッチング工程と、前記導電膜及び前記半導体層に対するエッチングレートが、前記第1のエッチング工程よりも高い条件により行う第2のエッチング工程と、を有する方法によりトランジスタを作製する。
【選択図】図1
Description
本実施の形態は、本発明の一態様であるトランジスタ及びその作製方法について説明する。
以上説明したように、本実施の形態のトランジスタが完成する(図2(B))。
本発明は、実施の形態1に示した形態に限定されない。例えば、本発明の一態様であるトランジスタとして、BGBC構造のトランジスタを形成してもよい。
本発明は、実施の形態1及び実施の形態2に示した形態に限定されない。例えば、本発明の一態様であるトランジスタとして、TGTC構造のトランジスタを形成してもよい。
本発明は、実施の形態1乃至実施の形態3に示した形態に限定されない。例えば、本発明の一態様であるトランジスタとして、TGBC構造のトランジスタを形成してもよい。
次に、本発明の一態様である電子機器について説明する。本発明の一態様である電子機器には、実施の形態1乃至実施の形態4で説明した素子の少なくとも一つを搭載させる。本発明の一態様である電子機器として、例えば、コンピュータ、携帯電話機(携帯電話、携帯電話装置ともいう)、携帯情報端末(携帯型ゲーム機、音響再生装置なども含む)、デジタルカメラ、デジタルビデオカメラ、電子ペーパー、テレビジョン装置(テレビ、またはテレビジョン受信機ともいう)などが挙げられる。
102 第1の配線層
104 第1の絶縁層
105 半導体層
106 半導体層
107 導電膜
108 第2の配線層
109 レジストマスク
110 第2の絶縁層
111 レジストマスク
112 第3の配線層
200 基板
202 第1の配線層
203 第1の絶縁層
204 第1の絶縁層
205 半導体層
206 半導体層
207 導電膜
208 第2の配線層
209 レジストマスク
210 第2の絶縁層
211 レジストマスク
212 第3の配線層
300 基板
304 下地絶縁層
305 半導体層
306 半導体層
307 導電膜
308 第1の配線層
309 レジストマスク
310 絶縁層
311 レジストマスク
312 第2の配線層
400 基板
403 下地絶縁層
404 下地絶縁層
405 半導体層
406 半導体層
407 導電膜
408 第1の配線層
409 レジストマスク
410 絶縁層
411 レジストマスク
412 第2の配線層
501 筐体
502 筐体
503 表示部
504 キーボード
511 本体
512 スタイラス
513 表示部
514 操作ボタン
515 外部インターフェイス
520 電子書籍
521 筐体
523 筐体
525 表示部
527 表示部
531 電源
533 操作キー
535 スピーカー
537 軸部
540 筐体
541 筐体
542 表示パネル
543 スピーカー
544 マイクロフォン
546 ポインティングデバイス
547 カメラ用レンズ
548 外部接続端子
549 太陽電池セル
550 外部メモリスロット
561 本体
563 接眼部
564 操作スイッチ
565 表示部
566 バッテリー
567 表示部
570 テレビジョン装置
571 筐体
573 表示部
575 スタンド
580 リモコン操作機
Claims (5)
- 第1の配線層を形成し、
該第1の配線層を覆って第1の絶縁層を形成し、
該第1の絶縁層上に半導体層を形成し、
該半導体層上に導電膜を形成し、
該導電膜に少なくとも2段階のエッチングを行って第2の配線層を離間させて形成し、
前記2段階のエッチングが、少なくとも前記導電膜に対するエッチングレートが前記半導体層に対するエッチングレートより高い条件により行う第1のエッチング工程と、
前記導電膜及び前記半導体層に対するエッチングレートが、前記第1のエッチング工程よりも高い条件により行う第2のエッチング工程と、を有することを特徴とするトランジスタの作製方法。 - 第1の配線層を形成し、
該第1の配線層を覆って第1の絶縁層を形成し、
該第1の絶縁層上に導電膜を形成し、
該導電膜に少なくとも2段階のエッチングを行って第1の絶縁層及び第2の配線層を離間させて形成し、
該第1の絶縁層及び該第2の配線層上に半導体層を形成し、
前記2段階のエッチングが、少なくとも前記導電膜に対するエッチングレートが前記第1の絶縁層に対するエッチングレートより高い条件により行う第1のエッチング工程と、
前記導電膜及び前記第1の絶縁層に対するエッチングレートが、前記第1のエッチング工程よりも高い条件により行う第2のエッチング工程と、を有することを特徴とするトランジスタの作製方法。 - 半導体層を形成し、
該半導体層上に導電膜を形成し、
該導電膜に少なくとも2段階のエッチングを行って半導体層及び第1の配線層を離間させて形成し、
該第1の配線層及び前記半導体層を覆って絶縁層を形成し、
該絶縁層上に半導体層と重畳して第2の配線層を形成し、
前記2段階のエッチングが、少なくとも前記導電膜に対するエッチングレートが前記半導体層に対するエッチングレートより高い条件により行う第1のエッチング工程と、
前記導電膜及び前記半導体層に対するエッチングレートが、前記第1のエッチング工程よりも高い条件により行う第2のエッチング工程と、を有することを特徴とするトランジスタの作製方法。 - 下地絶縁層を形成し、
該下地絶縁層上に導電膜を形成し、
該導電膜に少なくとも2段階のエッチングを行って下地絶縁層及び第1の配線層を離間させて形成し、
該下地絶縁層及び該第1の配線層上に半導体層を形成し、
該下地絶縁層、該半導体層及び該第1の配線層を覆って絶縁層を形成し、
該絶縁層上に該半導体層と重畳して第2の配線層を形成し、
前記2段階のエッチングが、少なくとも前記導電膜に対するエッチングレートが前記下地絶縁層に対するエッチングレートより高い条件により行う第1のエッチング工程と、
前記導電膜及び前記下地絶縁層に対するエッチングレートが、前記第1のエッチング工程よりも高い条件により行う第2のエッチング工程と、を有することを特徴とするトランジスタの作製方法。 - 請求項1乃至請求項4のいずれか一において、
前記第1のエッチングはSF6を用いて行い、
前記第2のエッチングはBCl3とCl2の混合ガスを用いて行うことを特徴とするトランジスタの作製方法。
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Also Published As
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JP2017163150A (ja) | 2017-09-14 |
KR20110095830A (ko) | 2011-08-25 |
TWI557804B (zh) | 2016-11-11 |
TW201203378A (en) | 2012-01-16 |
US8597992B2 (en) | 2013-12-03 |
KR101794352B1 (ko) | 2017-11-06 |
JP5740169B2 (ja) | 2015-06-24 |
US20110207269A1 (en) | 2011-08-25 |
JP2015146460A (ja) | 2015-08-13 |
JP6431563B2 (ja) | 2018-11-28 |
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