JP2011166751A5 - - Google Patents

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Publication number
JP2011166751A5
JP2011166751A5 JP2011002597A JP2011002597A JP2011166751A5 JP 2011166751 A5 JP2011166751 A5 JP 2011166751A5 JP 2011002597 A JP2011002597 A JP 2011002597A JP 2011002597 A JP2011002597 A JP 2011002597A JP 2011166751 A5 JP2011166751 A5 JP 2011166751A5
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JP
Japan
Prior art keywords
transistor
signal
electrically connected
photodiode
photosensor
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JP2011002597A
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English (en)
Japanese (ja)
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JP5727796B2 (ja
JP2011166751A (ja
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Priority claimed from JP2011002597A external-priority patent/JP5727796B2/ja
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Publication of JP2011166751A5 publication Critical patent/JP2011166751A5/ja
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JP2011002597A 2010-01-15 2011-01-10 半導体装置 Active JP5727796B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2011002597A JP5727796B2 (ja) 2010-01-15 2011-01-10 半導体装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2010007249 2010-01-15
JP2010007249 2010-01-15
JP2011002597A JP5727796B2 (ja) 2010-01-15 2011-01-10 半導体装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2015075561A Division JP6025902B2 (ja) 2010-01-15 2015-04-02 半導体装置

Publications (3)

Publication Number Publication Date
JP2011166751A JP2011166751A (ja) 2011-08-25
JP2011166751A5 true JP2011166751A5 (enExample) 2014-02-13
JP5727796B2 JP5727796B2 (ja) 2015-06-03

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ID=44277590

Family Applications (3)

Application Number Title Priority Date Filing Date
JP2011002597A Active JP5727796B2 (ja) 2010-01-15 2011-01-10 半導体装置
JP2015075561A Expired - Fee Related JP6025902B2 (ja) 2010-01-15 2015-04-02 半導体装置
JP2016199897A Expired - Fee Related JP6313393B2 (ja) 2010-01-15 2016-10-11 半導体装置

Family Applications After (2)

Application Number Title Priority Date Filing Date
JP2015075561A Expired - Fee Related JP6025902B2 (ja) 2010-01-15 2015-04-02 半導体装置
JP2016199897A Expired - Fee Related JP6313393B2 (ja) 2010-01-15 2016-10-11 半導体装置

Country Status (6)

Country Link
US (1) US9871526B2 (enExample)
JP (3) JP5727796B2 (enExample)
KR (1) KR101733755B1 (enExample)
CN (1) CN102725961B (enExample)
TW (1) TWI587701B (enExample)
WO (1) WO2011086829A1 (enExample)

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KR101805378B1 (ko) 2010-01-24 2017-12-06 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치와 이의 제조 방법
KR101793534B1 (ko) * 2011-01-05 2017-11-06 삼성디스플레이 주식회사 포토센서 및 그의 제조방법
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KR102553553B1 (ko) * 2015-06-12 2023-07-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 촬상 장치, 및 그 동작 방법 및 전자 기기
JP7254826B2 (ja) * 2018-09-28 2023-04-10 株式会社半導体エネルギー研究所 半導体装置
KR102098700B1 (ko) * 2018-11-16 2020-04-08 네메시스 주식회사 개선된 동적 범위와 노이즈 특성을 가지는 포토 센싱 장치
JP7169171B2 (ja) * 2018-11-19 2022-11-10 株式会社東芝 半導体装置及び距離計測装置
KR102869845B1 (ko) 2019-03-06 2025-10-13 삼성디스플레이 주식회사 디스플레이 패널 및 이를 포함한 디스플레이 장치
CN113836987B (zh) * 2020-06-24 2025-03-04 京东方科技集团股份有限公司 传感器装置、电子设备和降低信号噪声的方法

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