TWI587701B - 半導體裝置及電子裝置 - Google Patents

半導體裝置及電子裝置 Download PDF

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Publication number
TWI587701B
TWI587701B TW100100328A TW100100328A TWI587701B TW I587701 B TWI587701 B TW I587701B TW 100100328 A TW100100328 A TW 100100328A TW 100100328 A TW100100328 A TW 100100328A TW I587701 B TWI587701 B TW I587701B
Authority
TW
Taiwan
Prior art keywords
transistor
signal
photodiode
electrically connected
semiconductor device
Prior art date
Application number
TW100100328A
Other languages
English (en)
Chinese (zh)
Other versions
TW201138450A (en
Inventor
黑川義元
Original Assignee
半導體能源研究所股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
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Application filed by 半導體能源研究所股份有限公司 filed Critical 半導體能源研究所股份有限公司
Publication of TW201138450A publication Critical patent/TW201138450A/zh
Application granted granted Critical
Publication of TWI587701B publication Critical patent/TWI587701B/zh

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Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K23/00—Pulse counters comprising counting chains; Frequency dividers comprising counting chains
    • H03K23/40—Gating or clocking signals applied to all stages, i.e. synchronous counters
    • H03K23/50—Gating or clocking signals applied to all stages, i.e. synchronous counters using bi-stable regenerative trigger circuits
    • H03K23/54—Ring counters, i.e. feedback shift register counters
    • H03K23/548—Reversible counters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/78—Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/026—Wafer-level processing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/191—Photoconductor image sensors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03M—CODING; DECODING; CODE CONVERSION IN GENERAL
    • H03M1/00—Analogue/digital conversion; Digital/analogue conversion
    • H03M1/12—Analogue/digital converters
    • H03M1/1205—Multiplexed conversion systems
    • H03M1/123—Simultaneous, i.e. using one converter per channel but with common control or reference circuits for multiple converters
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03M—CODING; DECODING; CODE CONVERSION IN GENERAL
    • H03M1/00—Analogue/digital conversion; Digital/analogue conversion
    • H03M1/12—Analogue/digital converters
    • H03M1/60—Analogue/digital converters with intermediate conversion to frequency of pulses

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Thin Film Transistor (AREA)
  • Light Receiving Elements (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Analogue/Digital Conversion (AREA)
TW100100328A 2010-01-15 2011-01-05 半導體裝置及電子裝置 TWI587701B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010007249 2010-01-15

Publications (2)

Publication Number Publication Date
TW201138450A TW201138450A (en) 2011-11-01
TWI587701B true TWI587701B (zh) 2017-06-11

Family

ID=44277590

Family Applications (1)

Application Number Title Priority Date Filing Date
TW100100328A TWI587701B (zh) 2010-01-15 2011-01-05 半導體裝置及電子裝置

Country Status (6)

Country Link
US (1) US9871526B2 (enExample)
JP (3) JP5727796B2 (enExample)
KR (1) KR101733755B1 (enExample)
CN (1) CN102725961B (enExample)
TW (1) TWI587701B (enExample)
WO (1) WO2011086829A1 (enExample)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102713999B (zh) 2010-01-20 2016-01-20 株式会社半导体能源研究所 电子设备和电子系统
KR101805378B1 (ko) 2010-01-24 2017-12-06 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치와 이의 제조 방법
KR101793534B1 (ko) * 2011-01-05 2017-11-06 삼성디스플레이 주식회사 포토센서 및 그의 제조방법
JP5902590B2 (ja) * 2012-09-06 2016-04-13 株式会社半導体エネルギー研究所 半導体装置
KR101886445B1 (ko) 2012-10-19 2018-08-07 현대자동차주식회사 차량용 슬라이딩 도어의 직선형 센터레일 링크 구조
JP6093726B2 (ja) * 2013-03-22 2017-03-08 株式会社半導体エネルギー研究所 半導体装置
US9324747B2 (en) * 2014-03-13 2016-04-26 Semiconductor Energy Laboratory Co., Ltd. Imaging device
JP6545541B2 (ja) * 2014-06-25 2019-07-17 株式会社半導体エネルギー研究所 撮像装置、監視装置、及び電子機器
KR102553553B1 (ko) * 2015-06-12 2023-07-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 촬상 장치, 및 그 동작 방법 및 전자 기기
JP7254826B2 (ja) * 2018-09-28 2023-04-10 株式会社半導体エネルギー研究所 半導体装置
KR102098700B1 (ko) * 2018-11-16 2020-04-08 네메시스 주식회사 개선된 동적 범위와 노이즈 특성을 가지는 포토 센싱 장치
JP7169171B2 (ja) * 2018-11-19 2022-11-10 株式会社東芝 半導体装置及び距離計測装置
KR102869845B1 (ko) 2019-03-06 2025-10-13 삼성디스플레이 주식회사 디스플레이 패널 및 이를 포함한 디스플레이 장치
CN113836987B (zh) * 2020-06-24 2025-03-04 京东方科技集团股份有限公司 传感器装置、电子设备和降低信号噪声的方法

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Publication number Priority date Publication date Assignee Title
US4285584A (en) * 1979-10-02 1981-08-25 Polaroid Corporation Photometric device
US6839084B1 (en) * 1998-06-17 2005-01-04 Canon Kabushiki Kaisha Image pickup apparatus capable of switching modes based on signals from photoelectric conversion pixels
US6384398B1 (en) * 1998-10-14 2002-05-07 National Semiconductor Corporation CMOS compatible pixel cell that utilizes a gated diode to reset the cell
US6542105B2 (en) * 2000-12-18 2003-04-01 Canon Kabushiki Kaisha A/D converter
US20040169127A1 (en) * 2002-08-29 2004-09-02 Narumi Ohkawa Semiconductor device for reading signal from photodiode via transistors
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Also Published As

Publication number Publication date
KR20120116458A (ko) 2012-10-22
CN102725961A (zh) 2012-10-10
WO2011086829A1 (en) 2011-07-21
US20110176652A1 (en) 2011-07-21
KR101733755B1 (ko) 2017-05-08
JP2015149497A (ja) 2015-08-20
JP6313393B2 (ja) 2018-04-18
TW201138450A (en) 2011-11-01
CN102725961B (zh) 2017-10-13
JP2017063433A (ja) 2017-03-30
JP6025902B2 (ja) 2016-11-16
JP5727796B2 (ja) 2015-06-03
US9871526B2 (en) 2018-01-16
JP2011166751A (ja) 2011-08-25

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