JP5727796B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP5727796B2
JP5727796B2 JP2011002597A JP2011002597A JP5727796B2 JP 5727796 B2 JP5727796 B2 JP 5727796B2 JP 2011002597 A JP2011002597 A JP 2011002597A JP 2011002597 A JP2011002597 A JP 2011002597A JP 5727796 B2 JP5727796 B2 JP 5727796B2
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Japan
Prior art keywords
transistor
photosensor
signal line
potential
photodiode
Prior art date
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JP2011002597A
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Japanese (ja)
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JP2011166751A5 (enExample
JP2011166751A (ja
Inventor
黒川　義元
義元 黒川
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2011002597A priority Critical patent/JP5727796B2/ja
Publication of JP2011166751A publication Critical patent/JP2011166751A/ja
Publication of JP2011166751A5 publication Critical patent/JP2011166751A5/ja
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K23/00—Pulse counters comprising counting chains; Frequency dividers comprising counting chains
    • H03K23/40—Gating or clocking signals applied to all stages, i.e. synchronous counters
    • H03K23/50—Gating or clocking signals applied to all stages, i.e. synchronous counters using bi-stable regenerative trigger circuits
    • H03K23/54—Ring counters, i.e. feedback shift register counters
    • H03K23/548—Reversible counters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/78—Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/026—Wafer-level processing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/191—Photoconductor image sensors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03M—CODING; DECODING; CODE CONVERSION IN GENERAL
    • H03M1/00—Analogue/digital conversion; Digital/analogue conversion
    • H03M1/12—Analogue/digital converters
    • H03M1/1205—Multiplexed conversion systems
    • H03M1/123—Simultaneous, i.e. using one converter per channel but with common control or reference circuits for multiple converters
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03M—CODING; DECODING; CODE CONVERSION IN GENERAL
    • H03M1/00—Analogue/digital conversion; Digital/analogue conversion
    • H03M1/12—Analogue/digital converters
    • H03M1/60—Analogue/digital converters with intermediate conversion to frequency of pulses

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Thin Film Transistor (AREA)
  • Light Receiving Elements (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Analogue/Digital Conversion (AREA)
JP2011002597A 2010-01-15 2011-01-10 半導体装置 Active JP5727796B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2011002597A JP5727796B2 (ja) 2010-01-15 2011-01-10 半導体装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2010007249 2010-01-15
JP2010007249 2010-01-15
JP2011002597A JP5727796B2 (ja) 2010-01-15 2011-01-10 半導体装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2015075561A Division JP6025902B2 (ja) 2010-01-15 2015-04-02 半導体装置

Publications (3)

Publication Number Publication Date
JP2011166751A JP2011166751A (ja) 2011-08-25
JP2011166751A5 JP2011166751A5 (enExample) 2014-02-13
JP5727796B2 true JP5727796B2 (ja) 2015-06-03

Family

ID=44277590

Family Applications (3)

Application Number Title Priority Date Filing Date
JP2011002597A Active JP5727796B2 (ja) 2010-01-15 2011-01-10 半導体装置
JP2015075561A Expired - Fee Related JP6025902B2 (ja) 2010-01-15 2015-04-02 半導体装置
JP2016199897A Expired - Fee Related JP6313393B2 (ja) 2010-01-15 2016-10-11 半導体装置

Family Applications After (2)

Application Number Title Priority Date Filing Date
JP2015075561A Expired - Fee Related JP6025902B2 (ja) 2010-01-15 2015-04-02 半導体装置
JP2016199897A Expired - Fee Related JP6313393B2 (ja) 2010-01-15 2016-10-11 半導体装置

Country Status (6)

Country Link
US (1) US9871526B2 (enExample)
JP (3) JP5727796B2 (enExample)
KR (1) KR101733755B1 (enExample)
CN (1) CN102725961B (enExample)
TW (1) TWI587701B (enExample)
WO (1) WO2011086829A1 (enExample)

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CN102713999B (zh) 2010-01-20 2016-01-20 株式会社半导体能源研究所 电子设备和电子系统
KR101805378B1 (ko) 2010-01-24 2017-12-06 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치와 이의 제조 방법
KR101793534B1 (ko) * 2011-01-05 2017-11-06 삼성디스플레이 주식회사 포토센서 및 그의 제조방법
JP5902590B2 (ja) * 2012-09-06 2016-04-13 株式会社半導体エネルギー研究所 半導体装置
KR101886445B1 (ko) 2012-10-19 2018-08-07 현대자동차주식회사 차량용 슬라이딩 도어의 직선형 센터레일 링크 구조
JP6093726B2 (ja) * 2013-03-22 2017-03-08 株式会社半導体エネルギー研究所 半導体装置
US9324747B2 (en) * 2014-03-13 2016-04-26 Semiconductor Energy Laboratory Co., Ltd. Imaging device
JP6545541B2 (ja) * 2014-06-25 2019-07-17 株式会社半導体エネルギー研究所 撮像装置、監視装置、及び電子機器
KR102553553B1 (ko) * 2015-06-12 2023-07-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 촬상 장치, 및 그 동작 방법 및 전자 기기
JP7254826B2 (ja) * 2018-09-28 2023-04-10 株式会社半導体エネルギー研究所 半導体装置
KR102098700B1 (ko) * 2018-11-16 2020-04-08 네메시스 주식회사 개선된 동적 범위와 노이즈 특성을 가지는 포토 센싱 장치
JP7169171B2 (ja) * 2018-11-19 2022-11-10 株式会社東芝 半導体装置及び距離計測装置
KR102869845B1 (ko) 2019-03-06 2025-10-13 삼성디스플레이 주식회사 디스플레이 패널 및 이를 포함한 디스플레이 장치
CN113836987B (zh) * 2020-06-24 2025-03-04 京东方科技集团股份有限公司 传感器装置、电子设备和降低信号噪声的方法

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Also Published As

Publication number Publication date
TWI587701B (zh) 2017-06-11
KR20120116458A (ko) 2012-10-22
CN102725961A (zh) 2012-10-10
WO2011086829A1 (en) 2011-07-21
US20110176652A1 (en) 2011-07-21
KR101733755B1 (ko) 2017-05-08
JP2015149497A (ja) 2015-08-20
JP6313393B2 (ja) 2018-04-18
TW201138450A (en) 2011-11-01
CN102725961B (zh) 2017-10-13
JP2017063433A (ja) 2017-03-30
JP6025902B2 (ja) 2016-11-16
US9871526B2 (en) 2018-01-16
JP2011166751A (ja) 2011-08-25

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