JP2011151398A - トランジスタ - Google Patents
トランジスタ Download PDFInfo
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- JP2011151398A JP2011151398A JP2011023388A JP2011023388A JP2011151398A JP 2011151398 A JP2011151398 A JP 2011151398A JP 2011023388 A JP2011023388 A JP 2011023388A JP 2011023388 A JP2011023388 A JP 2011023388A JP 2011151398 A JP2011151398 A JP 2011151398A
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- 239000004065 semiconductor Substances 0.000 claims abstract description 132
- 239000013078 crystal Substances 0.000 claims abstract description 71
- 239000000758 substrate Substances 0.000 claims abstract description 28
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 14
- 229910052594 sapphire Inorganic materials 0.000 claims description 11
- 239000010980 sapphire Substances 0.000 claims description 11
- 230000005669 field effect Effects 0.000 claims description 6
- 229910021431 alpha silicon carbide Inorganic materials 0.000 claims description 4
- 229910002704 AlGaN Inorganic materials 0.000 abstract description 54
- 239000011159 matrix material Substances 0.000 description 24
- 238000005253 cladding Methods 0.000 description 18
- 239000000463 material Substances 0.000 description 14
- 150000004767 nitrides Chemical class 0.000 description 14
- 230000010287 polarization Effects 0.000 description 12
- 239000000969 carrier Substances 0.000 description 11
- 230000000694 effects Effects 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 7
- 239000012535 impurity Substances 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 230000009466 transformation Effects 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 210000003754 fetus Anatomy 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 230000002269 spontaneous effect Effects 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000005533 two-dimensional electron gas Effects 0.000 description 1
- 229910052984 zinc sulfide Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/2003—Nitride compounds
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
- G02B1/02—Optical elements characterised by the material of which they are made; Optical coatings for optical elements made of crystals, e.g. rock-salt, semi-conductors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
- H01L29/045—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes by their particular orientation of crystalline planes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
- H01L29/7787—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT with wide bandgap charge-carrier supplying layer, e.g. direct single heterostructure MODFET
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/16—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/2201—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure in a specific crystallographic orientation
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- General Physics & Mathematics (AREA)
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- Condensed Matter Physics & Semiconductors (AREA)
- Crystallography & Structural Chemistry (AREA)
- Optics & Photonics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Nanotechnology (AREA)
- Life Sciences & Earth Sciences (AREA)
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- Electromagnetism (AREA)
- Junction Field-Effect Transistors (AREA)
- Semiconductor Lasers (AREA)
Abstract
【解決手段】単結晶基板105と、対称性6mmの六方晶系結晶から構成され、単結晶基板105上に形成された半導体層101と、半導体層101上に形成されたソース電極102、ドレイン電極103及びゲート電極104とを備え、半導体層101を構成するGaN層106及びAlGaN層107の主面は六方晶系結晶のC軸を面内に含み、半導体層101内のチャネル領域101aの長手方向は六方晶系結晶のC軸と平行である。
【選択図】図1
Description
図1(a)は第1の実施の形態のFETの斜視図であり、図1(b)は同FETの断面図(図1(a)のA−A’線における断面図)である。なお、図1(a)はウエハにおける1つのFETが形成された部分を模式的に示すものである。
x)Al(y)Ga(z)N(1−x−y−z)(0≦x、y、z≦1かつx+y+z≦1かつx、y、zは同時に0ではない)から構成され、エピタキシャル成長法により単結晶基板
105の主面上に形成された半導体層101と、半導体層101の主面上に形成されたソース電極102、ドレイン電極103及びゲート電極104とから構成される。
〔e’〕=〔a〕〔e〕〔M〕T=〔e〕 ・・・(4)
図5(a)は第2の実施の形態のFETの斜視図であり、図5(b)は同FETの断面図(図5(a)のA−A’線における断面図)である。なお、図5(a)はウエハにおける1つのFETが形成された部分を模式的に示すものである。また、図1と同一の要素には同一の符号が付されており、それらに関する詳しい説明はここでは省略する。
図6は第3の実施の形態の半導体レーザ素子の構造を示す斜視図である。
(0≦x、y、z≦1かつx+y+z≦1かつx、y、zは同時に0ではない)から構成
され、エピタキシャル成長法によりn型GaN基板146の主面上に形成された半導体層141と、n型GaN基板146の裏面に形成され、例えばTi/Au等から構成されるn型電極147と、半導体層141の主面上に形成され、例えばNi/Pt/Au多層構造を有するp型電極148とから構成される。なお、半導体レーザ素子1個の基板面内サイズは、500μm×300μm(リッジ方向が500μm)である。
101a、121a チャネル領域
102 ソース電極
103 ドレイン電極
104、131 ゲート電極
105 単結晶基板
106 GaN層
107 AlGaN層
130 活性領域
142 n型クラッド層
143 活性層
144 p型クラッド層
145 p型コンタクト層
146 n型GaN基板
147 n型電極
148 p型電極
149 リッジ部
Claims (8)
- 活性領域を有し、第1六方晶系(6mm)結晶から構成される第1半導体層と、
前記第1半導体層の主面上に形成された、前記第1六方晶系(6mm)結晶と異なるバンドギャップエネルギーを有する第2六方晶系(6mm)結晶から構成される第2半導体層とを備え、
前記第1半導体層の主面は、前記第1六方晶系結晶のC軸と平行であり、
前記第2半導体層の主面は、前記第2六方晶系結晶のC軸と平行であり、
前記第2半導体層の上にストライプ状のゲート電極が形成されており、
前記活性領域は、前記C軸と垂直方向に108(dyn/cm2)以下のストレスを受けており、
前記ゲート電極の長手方向は、前記第2六方晶系結晶のC軸と垂直である
ことを特徴とするトランジスタ。 - 前記トランジスタは、電界効果型トランジスタであり、
前記活性領域は、チャネル領域である
ことを特徴とする請求項1に記載のトランジスタ。 - 前記第1半導体層の主面は、前記第1六方晶系結晶のA面から0.1°から10°傾いている
ことを特徴とする請求項1に記載のトランジスタ。 - 前記第1半導体層の主面は、前記第1六方晶系結晶のM面から0.1°から10°傾いている
ことを特徴とする請求項1に記載のトランジスタ。 - 前記第1半導体層及び第2半導体層は、In(x)Al(y)Ga(z)N(1−x−y−z)(0≦x、y、z≦1かつx+y+z≦1かつx、y、zは同時に0ではない)から構成される
ことを特徴とする請求項1に記載のトランジスタ。 - 前記トランジスタは、さらに、サファイア基板を備え、
前記第1半導体層は、前記サファイア基板のR面上に形成されている
ことを特徴とする請求項1に記載のトランジスタ。 - 前記トランジスタは、さらに、α−SiC基板を備え、
前記第1半導体層は、前記α−SiC基板の(11−20)面上に形成されている
ことを特徴とする請求項1に記載のトランジスタ。 - 前記トランジスタは、さらに、GaN基板を備え、
前記第1半導体層は、前記GaN基板の(11−20)面上に形成されている
ことを特徴とする請求項1に記載のトランジスタ。
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JP2011023388A JP5414709B2 (ja) | 2005-02-07 | 2011-02-04 | トランジスタ |
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JP2006030281A Division JP4917319B2 (ja) | 2005-02-07 | 2006-02-07 | トランジスタ |
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JP5414709B2 JP5414709B2 (ja) | 2014-02-12 |
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JP (1) | JP5414709B2 (ja) |
Cited By (2)
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---|---|---|---|---|
JP2013252827A (ja) * | 2012-06-08 | 2013-12-19 | Hitachi Automotive Systems Ltd | 電動パワーステアリング装置 |
WO2016002157A1 (ja) * | 2014-07-02 | 2016-01-07 | パナソニックIpマネジメント株式会社 | 半導体装置 |
Families Citing this family (14)
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---|---|---|---|---|
JP2006324465A (ja) * | 2005-05-19 | 2006-11-30 | Matsushita Electric Ind Co Ltd | 半導体装置及びその製造方法 |
JP2007080855A (ja) * | 2005-09-09 | 2007-03-29 | Matsushita Electric Ind Co Ltd | 電界効果型トランジスタ |
JP4938531B2 (ja) * | 2007-04-09 | 2012-05-23 | 株式会社豊田中央研究所 | 半導体装置 |
JP5118392B2 (ja) * | 2007-06-08 | 2013-01-16 | ローム株式会社 | 半導体発光素子およびその製造方法 |
JP2008311533A (ja) * | 2007-06-15 | 2008-12-25 | Rohm Co Ltd | 高電子移動度トランジスタ |
US20090039356A1 (en) * | 2007-08-08 | 2009-02-12 | The Regents Of The University Of California | Planar nonpolar m-plane group iii-nitride films grown on miscut substrates |
JP2009076694A (ja) * | 2007-09-20 | 2009-04-09 | Panasonic Corp | 窒化物半導体装置およびその製造方法 |
JP2009117485A (ja) * | 2007-11-02 | 2009-05-28 | Panasonic Corp | 窒化物半導体装置 |
JPWO2009104299A1 (ja) * | 2008-02-22 | 2011-06-16 | 住友電気工業株式会社 | 半導体装置および半導体装置の製造方法 |
US8178896B2 (en) | 2008-03-05 | 2012-05-15 | Panasonic Corporation | Light emitting element |
US8309985B2 (en) * | 2008-08-29 | 2012-11-13 | Panasonic Corporation | Light emitting device |
WO2014135211A1 (en) * | 2013-03-07 | 2014-09-12 | Vertu Corporation Limited | Sapphire structure having a plurality of crystal planes |
JP6560112B2 (ja) | 2015-12-09 | 2019-08-14 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
JP7244745B2 (ja) * | 2019-02-15 | 2023-03-23 | 日亜化学工業株式会社 | 発光装置、及び、光学装置 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0864912A (ja) * | 1994-08-26 | 1996-03-08 | Rohm Co Ltd | 半導体発光素子およびその製法 |
JPH10135576A (ja) * | 1996-02-23 | 1998-05-22 | Fujitsu Ltd | 半導体発光素子、光半導体素子、発光ダイオード及び表示装置 |
JPH11112029A (ja) * | 1997-09-30 | 1999-04-23 | Hewlett Packard Co <Hp> | 光半導体素子およびその製造方法 |
JP2001160656A (ja) * | 1999-12-01 | 2001-06-12 | Sharp Corp | 窒化物系化合物半導体装置 |
JP2002076329A (ja) * | 2000-09-01 | 2002-03-15 | Nec Corp | 半導体装置 |
JP2004327766A (ja) * | 2003-04-25 | 2004-11-18 | Matsushita Electric Ind Co Ltd | 半導体装置 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1998019375A1 (fr) * | 1996-10-30 | 1998-05-07 | Hitachi, Ltd. | Machine de traitement optique de l'information et dispositif a semi-conducteur emetteur de lumiere afferent |
JP4365530B2 (ja) * | 1998-09-10 | 2009-11-18 | ローム株式会社 | 半導体発光素子およびその製法 |
US7229499B2 (en) | 2003-08-22 | 2007-06-12 | Matsushita Electric Industrial Co., Ltd. | Manufacturing method for semiconductor device, semiconductor device and semiconductor wafer |
US7279751B2 (en) | 2004-06-21 | 2007-10-09 | Matsushita Electric Industrial Co., Ltd. | Semiconductor laser device and manufacturing method thereof |
US7508001B2 (en) | 2004-06-21 | 2009-03-24 | Panasonic Corporation | Semiconductor laser device and manufacturing method thereof |
JP2006093617A (ja) | 2004-09-27 | 2006-04-06 | Matsushita Electric Ind Co Ltd | 半導体抵抗素子およびその製造方法 |
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2006
- 2006-02-03 US US11/346,266 patent/US7432531B2/en active Active
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- 2011-02-04 JP JP2011023388A patent/JP5414709B2/ja active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0864912A (ja) * | 1994-08-26 | 1996-03-08 | Rohm Co Ltd | 半導体発光素子およびその製法 |
JPH10135576A (ja) * | 1996-02-23 | 1998-05-22 | Fujitsu Ltd | 半導体発光素子、光半導体素子、発光ダイオード及び表示装置 |
JPH11112029A (ja) * | 1997-09-30 | 1999-04-23 | Hewlett Packard Co <Hp> | 光半導体素子およびその製造方法 |
JP2001160656A (ja) * | 1999-12-01 | 2001-06-12 | Sharp Corp | 窒化物系化合物半導体装置 |
JP2002076329A (ja) * | 2000-09-01 | 2002-03-15 | Nec Corp | 半導体装置 |
JP2004327766A (ja) * | 2003-04-25 | 2004-11-18 | Matsushita Electric Ind Co Ltd | 半導体装置 |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013252827A (ja) * | 2012-06-08 | 2013-12-19 | Hitachi Automotive Systems Ltd | 電動パワーステアリング装置 |
WO2016002157A1 (ja) * | 2014-07-02 | 2016-01-07 | パナソニックIpマネジメント株式会社 | 半導体装置 |
JPWO2016002157A1 (ja) * | 2014-07-02 | 2017-04-27 | パナソニックIpマネジメント株式会社 | 半導体装置 |
US9899506B2 (en) | 2014-07-02 | 2018-02-20 | Panasonic Intellectual Property Management Co., Ltd. | Semiconductor device |
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