JP2011150315A - 表示装置 - Google Patents
表示装置 Download PDFInfo
- Publication number
- JP2011150315A JP2011150315A JP2010280227A JP2010280227A JP2011150315A JP 2011150315 A JP2011150315 A JP 2011150315A JP 2010280227 A JP2010280227 A JP 2010280227A JP 2010280227 A JP2010280227 A JP 2010280227A JP 2011150315 A JP2011150315 A JP 2011150315A
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- JP
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- Prior art keywords
- oxide semiconductor
- layer
- insulating layer
- transistor
- semiconductor layer
- Prior art date
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Classifications
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02414—Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02551—Group 12/16 materials
- H01L21/02554—Oxides
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/13606—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit having means for reducing parasitic capacitance
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02565—Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
Abstract
【解決手段】表示装置において、並設された複数本のソース信号線10,20と、ソース信号線と交差するように並設された複数本のゲート信号線30と、ソース信号線とゲート信号線との交差部近傍に設けられた酸化物半導体を用いたトランジスタ40を介して、ソース信号線の信号電圧が印加される画素電極70と、を備え、隣接する一対のソース信号線間に設けられる画素電極の側縁部を、ソース信号線の側縁部に重畳させ、かつ、一方のソース信号線との重畳面積を、他方のソース信号線との重畳面積と等しくする。
【選択図】図1
Description
図1は、表示装置における画素の構成例を示す平面図である。この表示装置は、ソース信号線10,20,ゲート信号線30,トランジスタ40,保持容量50,容量線60および画素電極70を備えている。
は式(2)に変形できる。
本実施の形態では、真性または実質的に真性な酸化物半導体を用いたトランジスタの構造の一例およびその作製方法の一例について説明する。
本実施の形態では、真性または実質的に真性な酸化物半導体を用いたトランジスタの構造およびその作製方法の一例について説明する。
本実施の形態では、真性または実質的に真性な酸化物半導体を用いたトランジスタの構造およびその作製方法の一例について説明する。
本実施の形態は、真性または実質的に真性な酸化物半導体を用いたトランジスタの構造およびその作製方法の一例を示す。本実施の形態で示すトランジスタ350は、実施の形態1のトランジスタ等に用いることができる。
30 ゲート信号線
40 トランジスタ
50 保持容量
51,52 寄生容量
60 容量線
70 画素電極
Claims (3)
- 並設された複数本のソース信号線と、
前記ソース信号線と交差するように並設された複数本のゲート信号線と、
前記ソース信号線と前記ゲート信号線との交差部近傍に設けられた酸化物半導体を用いたトランジスタを介して、前記ソース信号線の信号電圧が印加される画素電極と、
を備え、
隣接する一対の前記ソース信号線間に設けられる前記画素電極の側縁部を、前記ソース信号線の側縁部に重畳させ、かつ、一方の前記ソース信号線との重畳面積を、他方の前記ソース信号線との重畳面積と等しくすることを特徴とする表示装置。 - 前記酸化物半導体は、真性または実質的に真性であることを特徴とする請求項1に記載の表示装置。
- 前記酸化物半導体は、オフ電流が1[aA/μm]以下であることを特徴とする請求項1または2に記載の表示装置。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010280227A JP2011150315A (ja) | 2009-12-24 | 2010-12-16 | 表示装置 |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009292851 | 2009-12-24 | ||
JP2009292851 | 2009-12-24 | ||
JP2010280227A JP2011150315A (ja) | 2009-12-24 | 2010-12-16 | 表示装置 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2015074737A Division JP2015179271A (ja) | 2009-12-24 | 2015-04-01 | 表示装置 |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2011150315A true JP2011150315A (ja) | 2011-08-04 |
Family
ID=44186857
Family Applications (4)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010280227A Withdrawn JP2011150315A (ja) | 2009-12-24 | 2010-12-16 | 表示装置 |
JP2015074737A Withdrawn JP2015179271A (ja) | 2009-12-24 | 2015-04-01 | 表示装置 |
JP2017113155A Withdrawn JP2017207758A (ja) | 2009-12-24 | 2017-06-08 | 表示装置 |
JP2020082996A Withdrawn JP2020144393A (ja) | 2009-12-24 | 2020-05-11 | 表示装置 |
Family Applications After (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2015074737A Withdrawn JP2015179271A (ja) | 2009-12-24 | 2015-04-01 | 表示装置 |
JP2017113155A Withdrawn JP2017207758A (ja) | 2009-12-24 | 2017-06-08 | 表示装置 |
JP2020082996A Withdrawn JP2020144393A (ja) | 2009-12-24 | 2020-05-11 | 表示装置 |
Country Status (4)
Country | Link |
---|---|
US (1) | US9217903B2 (ja) |
JP (4) | JP2011150315A (ja) |
TW (2) | TWI504998B (ja) |
WO (1) | WO2011077916A1 (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2014095897A (ja) * | 2012-10-12 | 2014-05-22 | Semiconductor Energy Lab Co Ltd | 液晶表示装置 |
JP2018120214A (ja) * | 2017-01-16 | 2018-08-02 | 株式会社半導体エネルギー研究所 | 表示装置 |
JP2020008865A (ja) * | 2012-07-11 | 2020-01-16 | 株式会社半導体エネルギー研究所 | 液晶表示装置、及び液晶表示装置の駆動方法 |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102008754B1 (ko) | 2010-01-24 | 2019-08-09 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치와 이의 제조 방법 |
KR102294507B1 (ko) * | 2013-09-06 | 2021-08-30 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
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Also Published As
Publication number | Publication date |
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JP2020144393A (ja) | 2020-09-10 |
JP2015179271A (ja) | 2015-10-08 |
TW201133092A (en) | 2011-10-01 |
US20110156994A1 (en) | 2011-06-30 |
TW201541167A (zh) | 2015-11-01 |
JP2017207758A (ja) | 2017-11-24 |
TWI504998B (zh) | 2015-10-21 |
WO2011077916A1 (en) | 2011-06-30 |
TWI575290B (zh) | 2017-03-21 |
US9217903B2 (en) | 2015-12-22 |
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