JP2011130424A - 変調回路及びそれを備えた半導体装置 - Google Patents
変調回路及びそれを備えた半導体装置 Download PDFInfo
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- JP2011130424A JP2011130424A JP2010255066A JP2010255066A JP2011130424A JP 2011130424 A JP2011130424 A JP 2011130424A JP 2010255066 A JP2010255066 A JP 2010255066A JP 2010255066 A JP2010255066 A JP 2010255066A JP 2011130424 A JP2011130424 A JP 2011130424A
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- transistor
- oxide semiconductor
- semiconductor layer
- layer
- modulation circuit
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
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Abstract
【解決手段】変調回路は、負荷と、スイッチとして機能するトランジスタとを有し、前記トランジスタは、水素濃度が5×1019/cm3以下である酸化物半導体層を有し、前記トランジスタのオフ電流は、1×10−13A以下である。または、変調回路は、負荷と、スイッチとして機能するトランジスタと、ダイオードとを有し、前記負荷、前記トランジスタ、及び前記ダイオードは、アンテナの両端間に直列に接続されており、前記トランジスタは、水素濃度が5×1019/cm3以下である酸化物半導体層を有し、前記トランジスタのオフ電流は、1×10−13A以下である。また、前記トランジスタのゲートに入力される信号により、当該トランジスタの導通・非導通が制御される。また、前記負荷は、抵抗、容量、または抵抗及び容量である。
【選択図】図3
Description
図1は、本発明の一態様として用いるRFタグ全体のブロック図を示すものである。RFタグ100は、受信されたデータに基づいて、応答信号を生成するなどといった機能的処理を行う論理回路101と、リーダ/ライタと信号の送受信(交信)を行うアンテナ回路102と、アンテナ回路102において受信された振幅変調波(搬送波に変調波を重畳して生成されたもの)を復調し、パルス信号を取り出す復調回路103と、論理回路101から出力される応答信号に従ってリーダ/ライタから出力されている搬送波を変調し、リーダ/ライタに応答信号を返信する変調回路104と、アンテナ回路102において受信された搬送波または振幅変調波から直流電圧を生成するための整流回路113と、整流回路113により生成された直流電圧を一定の電源電位とする定電圧回路114と、クロック生成回路117とを有する。
本実施の形態では、実施の形態1で説明した変調回路の構成について説明する。
本実施の形態では、変調回路の消費電力を更に抑制する構成について説明する。
本実施の形態では、変調回路に用いるトランジスタの構造の一例、及びその作製方法の一例について説明する。すなわち、高純度の酸化物半導体を用いたトランジスタの構造の一例、及びその作製方法の一例について説明する。
本実施の形態では、実施の形態4で説明したトランジスタとは別の構造を有するトランジスタの構造、及びその作製方法について図13を用いながら説明する。
本実施の形態では、実施の形態4、5で説明したトランジスタとは別の構造を有するトランジスタの構造、及びその作製方法について図14を用いながら説明する。
本実施の形態は、変調回路に適用可能なトランジスタの他の例について説明する。以下、図15(A)乃至(D)を用いて、基板340上にトランジスタ350を作製する工程を説明する。
本実施の形態では、本発明の一態様に係る変調回路を備えたRFタグの使用例について図10を用いながら説明する。RFタグの用途は広範にわたるが、例えば、紙幣、硬貨、有価証券類、無記名債券類、証書類(運転免許証や住民票等、図10(A)参照)、包装用容器類(包装紙やボトル等、図10(C)参照)、記録媒体(DVDソフトやビデオテープ等、図10(B)参照)、乗り物類(自転車等、図10(D)参照)、身の回り品(鞄や眼鏡等)、食品類、植物類、動物類、人体、衣類、生活用品類、または電子機器(液晶表示装置、EL表示装置、テレビジョン装置、または携帯電話機)等の物品、若しくは各物品に取り付ける荷札(図10(E)、図10(F)参照)等に設けて使用することができる。
101 論理回路
102 アンテナ回路
103 復調回路
104 変調回路
111 アンテナ
112 共振容量
113 整流回路
114 定電圧回路
117 クロック生成回路
301 変調回路
302 負荷
303 トランジスタ
304 アンテナ
305 信号
306 共振容量
307 アンテナ回路
Claims (9)
- 負荷と、スイッチとして機能するトランジスタとを有し、
前記トランジスタは、水素濃度が5×1019/cm3以下である酸化物半導体層を有し、
前記トランジスタのオフ電流は、1×10−13A以下であることを特徴とする変調回路。 - 負荷と、スイッチとして機能するトランジスタとを有し、
前記トランジスタは、ソースまたはドレインの一方が前記負荷を介してアンテナの一端に電気的に接続され、ソースまたはドレインの他方がアンテナの他端に電気的に接続され、
前記トランジスタは、水素濃度が5×1019/cm3以下である酸化物半導体層を有し、
前記トランジスタのオフ電流は、1×10−13A以下であることを特徴とする変調回路。 - 負荷と、スイッチとして機能するトランジスタと、ダイオードとを有し、
前記負荷、前記トランジスタ、及び前記ダイオードは、アンテナの両端間に直列に接続されており、
前記トランジスタは、水素濃度が5×1019/cm3以下である酸化物半導体層を有し、
前記トランジスタのオフ電流は、1×10−13A以下であることを特徴とする変調回路。 - 請求項3において、前記ダイオードは、ダイオード接続されたトランジスタであることを特徴とする変調回路。
- 請求項1乃至4のいずれか一において、
前記トランジスタのゲートに入力される信号により、当該トランジスタの導通・非導通が制御されることを特徴とする変調回路。 - 請求項1乃至5のいずれか一において、
前記負荷は、抵抗、容量、または抵抗及び容量であることを特徴とする変調回路。 - 請求項1乃至6のいずれか一に記載の変調回路と、アンテナと、整流回路と、復調回路と、定電圧回路と、論理回路とを有することを特徴とする半導体装置。
- 請求項1乃至6のいずれか一に記載の変調回路を有する半導体装置。
- 請求項1乃至6のいずれか一に記載の変調回路を有する携帯電話機。
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