JP2011129840A - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法 Download PDFInfo
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- JP2011129840A JP2011129840A JP2009289582A JP2009289582A JP2011129840A JP 2011129840 A JP2011129840 A JP 2011129840A JP 2009289582 A JP2009289582 A JP 2009289582A JP 2009289582 A JP2009289582 A JP 2009289582A JP 2011129840 A JP2011129840 A JP 2011129840A
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- semiconductor device
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- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
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- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
【解決手段】絶縁膜に形成された開口部内に、銅に対して拡散防止作用を有する第1金属材料を含む第1の膜と、酸素を含有する銅膜を含む第2の膜と、銅と、酸素と結合することにより銅に対して拡散防止作用を有する第2金属材料とを含む第3の膜と、銅を主材料とする第4の膜とを含む配線層を形成した後、熱処理により、絶縁膜と第4の膜との間に、第1金属材料、第2金属材料及び酸素を含むバリア層を形成する。
【選択図】図5
Description
このような背景において、近年、銅配線の信頼性を向上する技術として、銅を主体とするマンガン(Mn)を含む合金(Mn合金材)を用いてバリア膜を形成する方法が提案されている。Mn合金材を用いた新たなバリア化合物膜の形成技術は、配線層内に添加合金元素(Mn)を導入して熱処理を施すことで、自己修復的或いは自己整合的に導電部と層間絶縁膜との界面に拡散防止機能を有する層を形成するものである。これにより、界面における密着性とバリア性が確保され、銅配線の信頼性を向上することができる。
第1実施形態による半導体装置の製造方法について図1乃至図5を用いて説明する。
第2実施形態による半導体装置の製造方法について図2乃至図5を参照して説明する。第1実施形態による半導体装置及びその製造方法と同様の構成要素には同一の符号を付し説明を省略し又は簡潔にする。
第3実施形態による半導体装置の製造方法について図7を用いて説明する。図1乃至図6に示す第1及び第2実施形態による半導体装置及びその製造方法と同様の構成要素には同一の符号を付し説明を省略し又は簡潔にする。
上記実施形態に限らず種々の変形が可能である。
12,34,40…配線層
14,36,44…キャップ膜
16…絶縁膜
18,42…エッチングストッパ膜
22…ビアホール
24…配線溝
26,38…バリア層
28a…銅層
28…酸素含有銅層
30…合金層
32…配線材料
Claims (8)
- 半導体基板上に絶縁膜を形成する工程と、
前記絶縁膜に、開口部を形成する工程と、
前記絶縁膜の開口部の内壁及び底部に、Ta、Ti、Co、Zr及びRuを含む群から選択される少なくとも1種類の元素を含む第1金属材料を含む第1の膜を形成する工程と、
前記第1の膜上に、酸素を含有する銅膜を含む第2の膜を形成する工程と、
前記第2の膜上に、銅と、Mn、Ti及びAlを含む群から選択される少なくとも1種類の元素を含む第2金属材料とを含む第3の膜を形成する工程と、
前記第3の膜上に、前記第1の膜、前記第2の膜、及び前記第3の膜が形成された前記開口部内を埋め込むように、銅を含有する第4の膜を形成する工程と、
前記絶縁膜上の前記第4の膜、前記第3の膜、前記第2の膜、及び前記第1の膜を除去し、前記開口部内に埋め込まれた配線層を形成する工程とを有し、
前記第4の膜を形成する工程よりも後に、熱処理により、前記絶縁膜と前記第4の膜との間に、前記第1金属材料、前記第2金属材料及び酸素を含むバリア層を形成する工程を更に有する
ことを特徴とする半導体装置の製造方法。 - 半導体基板上に絶縁膜を形成する工程と、
前記絶縁膜に、開口部を形成する工程と、
前記絶縁膜の開口部の内壁及び底部に、銅に対して拡散防止作用を有する第1金属材料を含む第1の膜を形成する工程と、
前記第1の膜上に、酸素を含有する銅膜を含む第2の膜を形成する工程と、
前記第2の膜上に、銅と、酸素と結合することにより銅に対して拡散防止作用を有する第2金属材料とを含む第3の膜を形成する工程と、
前記第3の膜上に、前記第1の膜、前記第2の膜、及び前記第3の膜が形成された前記開口部内を埋め込むように、銅を含有する第4の膜を形成する工程と、
前記絶縁膜上の前記第4の膜、前記第3の膜、前記第2の膜、及び前記第1の膜を除去し、前記開口部内に埋め込まれた配線層を形成する工程とを有し、
前記第4の膜を形成する工程よりも後に、熱処理により、前記絶縁膜と前記第4の膜との間に、前記第1金属材料、前記第2金属材料及び酸素を含むバリア層を形成する工程を更に有する
ことを特徴とする半導体装置の製造方法。 - 請求項1又は2記載の半導体装置の製造方法において、
前記第3の膜を形成する工程は、銅膜を形成する工程と、前記銅膜の表面を酸化する工程とを有する
ことを特徴とする半導体装置の製造方法。 - 請求項1乃至3のいずれか1項に記載の半導体装置の製造方法において、
前記第3の膜中の酸素濃度は、1.0×1020atoms/cm3〜1.0×1022atoms/cm3である
ことを特徴とする半導体装置の製造方法。 - 請求項1乃至4のいずれか1項に記載の半導体装置の製造方法において、
前記バリア層を形成する工程では、300℃以上の前記熱処理を行う
ことを特徴とする半導体装置の製造方法。 - 請求項1乃至5のいずれか1項に記載の半導体装置の製造方法において、
前記絶縁膜は、酸素を含むシリコン系絶縁膜を有する
ことを特徴とする半導体装置の製造方法。 - 請求項2乃至5のいずれか1項に記載の半導体装置の製造方法において
前記第1金属材料は、Ta、Ti、Co、Zr及びRuを含む群から選択される少なくとも1種類の元素を含む
ことを特徴とする半導体装置の製造方法。 - 請求項2乃至6のいずれか1項に記載の半導体装置の製造方法において、
前記第2金属材料は、Mn、Ti及びAlを含む群から選択される少なくとも1種類の元素を含む
ことを特徴とする半導体装置の製造方法。
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