JP2011089188A - チタン含有スパッタリングターゲットの製造方法 - Google Patents

チタン含有スパッタリングターゲットの製造方法 Download PDF

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Publication number
JP2011089188A
JP2011089188A JP2009245325A JP2009245325A JP2011089188A JP 2011089188 A JP2011089188 A JP 2011089188A JP 2009245325 A JP2009245325 A JP 2009245325A JP 2009245325 A JP2009245325 A JP 2009245325A JP 2011089188 A JP2011089188 A JP 2011089188A
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JP
Japan
Prior art keywords
titanium
sputtering target
sintering
powder
metal powder
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2009245325A
Other languages
English (en)
Japanese (ja)
Other versions
JP2011089188A5 (enExample
Inventor
Kazuhisa Takahashi
一寿 高橋
Junichi Nitta
純一 新田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ulvac Inc
Original Assignee
Ulvac Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ulvac Inc filed Critical Ulvac Inc
Priority to JP2009245325A priority Critical patent/JP2011089188A/ja
Priority to PCT/JP2010/006262 priority patent/WO2011052171A1/ja
Priority to KR1020127011776A priority patent/KR20120064723A/ko
Priority to US13/503,816 priority patent/US20120217158A1/en
Priority to CN201080048483.2A priority patent/CN102597301B/zh
Publication of JP2011089188A publication Critical patent/JP2011089188A/ja
Publication of JP2011089188A5 publication Critical patent/JP2011089188A5/ja
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
    • B22F3/12—Both compacting and sintering
    • B22F3/14—Both compacting and sintering simultaneously
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
    • B22F3/24—After-treatment of workpieces or articles
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F9/00—Making metallic powder or suspensions thereof
    • B22F9/02—Making metallic powder or suspensions thereof using physical processes
    • B22F9/06—Making metallic powder or suspensions thereof using physical processes starting from liquid material
    • B22F9/08—Making metallic powder or suspensions thereof using physical processes starting from liquid material by casting, e.g. through sieves or in water, by atomising or spraying
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F2998/00—Supplementary information concerning processes or compositions relating to powder metallurgy
    • B22F2998/10—Processes characterised by the sequence of their steps

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Physical Vapour Deposition (AREA)
  • Powder Metallurgy (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Manufacture Of Metal Powder And Suspensions Thereof (AREA)
JP2009245325A 2009-10-26 2009-10-26 チタン含有スパッタリングターゲットの製造方法 Pending JP2011089188A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2009245325A JP2011089188A (ja) 2009-10-26 2009-10-26 チタン含有スパッタリングターゲットの製造方法
PCT/JP2010/006262 WO2011052171A1 (ja) 2009-10-26 2010-10-22 チタン含有スパッタリングターゲットの製造方法
KR1020127011776A KR20120064723A (ko) 2009-10-26 2010-10-22 티탄 함유 스퍼터링 타겟의 제조방법
US13/503,816 US20120217158A1 (en) 2009-10-26 2010-10-22 Method of manufacturing titanium-containing sputtering target
CN201080048483.2A CN102597301B (zh) 2009-10-26 2010-10-22 含钛溅射靶的制造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009245325A JP2011089188A (ja) 2009-10-26 2009-10-26 チタン含有スパッタリングターゲットの製造方法

Publications (2)

Publication Number Publication Date
JP2011089188A true JP2011089188A (ja) 2011-05-06
JP2011089188A5 JP2011089188A5 (enExample) 2012-12-06

Family

ID=43921606

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009245325A Pending JP2011089188A (ja) 2009-10-26 2009-10-26 チタン含有スパッタリングターゲットの製造方法

Country Status (5)

Country Link
US (1) US20120217158A1 (enExample)
JP (1) JP2011089188A (enExample)
KR (1) KR20120064723A (enExample)
CN (1) CN102597301B (enExample)
WO (1) WO2011052171A1 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103215541A (zh) * 2013-03-26 2013-07-24 无锡舒玛天科新能源技术有限公司 一种平面铜铟镓硒溅射靶材的制备方法
CN106378455A (zh) * 2015-07-31 2017-02-08 汉能新材料科技有限公司 一种钼合金旋转金属管材及其制备方法
ES3041454T3 (en) 2018-12-21 2025-11-12 Emz Hanauer Gmbh & Co Kgaa System for operating a refuse container and method for operating a refuse container
CN110551919A (zh) * 2019-09-23 2019-12-10 西安赛特金属材料开发有限公司 钛钼合金的制备方法
CN116377403B (zh) * 2023-04-27 2024-02-02 西安理工大学 钼钛靶材的制备方法
WO2025037642A1 (ja) * 2023-08-17 2025-02-20 東ソー株式会社 金属スパッタリングターゲット、金属スパッタリングターゲット構造体及びこれらを用いた膜の製造方法、並びに金属スパッタリングターゲットの製造方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0610126A (ja) * 1992-06-25 1994-01-18 Hitachi Metals Ltd Ｔｉ−Ｗターゲット材およびその製造方法
JP2002256422A (ja) * 2001-03-02 2002-09-11 Vacuum Metallurgical Co Ltd Ｗ−Ｔｉターゲット及びその製造方法
JP2005029862A (ja) * 2003-07-10 2005-02-03 Hitachi Metals Ltd 薄膜形成用スパッタリングターゲット
US20070089984A1 (en) * 2005-10-20 2007-04-26 H.C. Starck Inc. Methods of making molybdenum titanium sputtering plates and targets
JP2008255440A (ja) * 2007-04-06 2008-10-23 Hitachi Metals Ltd ＭｏＴｉ合金スパッタリングターゲット材

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5160534A (en) * 1990-06-15 1992-11-03 Hitachi Metals Ltd. Titanium-tungsten target material for sputtering and manufacturing method therefor
JP3073764B2 (ja) * 1990-11-27 2000-08-07 日立金属株式会社 Ｔｉ―Ｗターゲット材およびその製造方法
JP2859466B2 (ja) * 1990-06-15 1999-02-17 日立金属株式会社 Ｔｉ−Ｗターゲット材およびその製造方法
US5234487A (en) * 1991-04-15 1993-08-10 Tosoh Smd, Inc. Method of producing tungsten-titanium sputter targets and targets produced thereby
JPH0598435A (ja) * 1991-10-07 1993-04-20 Hitachi Metals Ltd Ｔｉ−Ｗターゲツト材およびその製造方法
US20040016635A1 (en) * 2002-07-19 2004-01-29 Ford Robert B. Monolithic sputtering target assembly
JP4110533B2 (ja) * 2004-02-27 2008-07-02 日立金属株式会社 Ｍｏ系ターゲット材の製造方法
JP2006028536A (ja) * 2004-07-12 2006-02-02 Hitachi Metals Ltd 焼結Ｍｏ系ターゲット材の製造方法
JP5210498B2 (ja) * 2006-04-28 2013-06-12 株式会社アルバック 接合型スパッタリングターゲット及びその作製方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0610126A (ja) * 1992-06-25 1994-01-18 Hitachi Metals Ltd Ｔｉ−Ｗターゲット材およびその製造方法
JP2002256422A (ja) * 2001-03-02 2002-09-11 Vacuum Metallurgical Co Ltd Ｗ−Ｔｉターゲット及びその製造方法
JP2005029862A (ja) * 2003-07-10 2005-02-03 Hitachi Metals Ltd 薄膜形成用スパッタリングターゲット
US20070089984A1 (en) * 2005-10-20 2007-04-26 H.C. Starck Inc. Methods of making molybdenum titanium sputtering plates and targets
JP2008255440A (ja) * 2007-04-06 2008-10-23 Hitachi Metals Ltd ＭｏＴｉ合金スパッタリングターゲット材

Also Published As

Publication number Publication date
CN102597301B (zh) 2014-03-26
WO2011052171A1 (ja) 2011-05-05
KR20120064723A (ko) 2012-06-19
CN102597301A (zh) 2012-07-18
US20120217158A1 (en) 2012-08-30

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