JP2007297654A - スパッタリングターゲット、並びに接合型スパッタリングターゲット及びその作製方法 - Google Patents
スパッタリングターゲット、並びに接合型スパッタリングターゲット及びその作製方法 Download PDFInfo
- Publication number
- JP2007297654A JP2007297654A JP2006124829A JP2006124829A JP2007297654A JP 2007297654 A JP2007297654 A JP 2007297654A JP 2006124829 A JP2006124829 A JP 2006124829A JP 2006124829 A JP2006124829 A JP 2006124829A JP 2007297654 A JP2007297654 A JP 2007297654A
- Authority
- JP
- Japan
- Prior art keywords
- sputtering target
- film
- powder
- junction
- oxygen concentration
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000005477 sputtering target Methods 0.000 title claims abstract description 103
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 16
- 239000000758 substrate Substances 0.000 claims abstract description 13
- 229910001069 Ti alloy Inorganic materials 0.000 claims abstract description 7
- 239000012535 impurity Substances 0.000 claims abstract description 4
- 238000000034 method Methods 0.000 claims description 32
- 239000000843 powder Substances 0.000 claims description 32
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 24
- 229910052760 oxygen Inorganic materials 0.000 claims description 24
- 239000001301 oxygen Substances 0.000 claims description 24
- 238000002844 melting Methods 0.000 claims description 10
- 230000008018 melting Effects 0.000 claims description 10
- 238000005245 sintering Methods 0.000 claims description 10
- 238000009792 diffusion process Methods 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 9
- 230000002159 abnormal effect Effects 0.000 abstract description 21
- 230000007797 corrosion Effects 0.000 abstract description 15
- 238000005260 corrosion Methods 0.000 abstract description 15
- 229910052802 copper Inorganic materials 0.000 abstract description 10
- 229910052737 gold Inorganic materials 0.000 abstract description 10
- 229910045601 alloy Inorganic materials 0.000 abstract description 9
- 239000000956 alloy Substances 0.000 abstract description 9
- 239000002184 metal Substances 0.000 abstract description 9
- 229910052751 metal Inorganic materials 0.000 abstract description 9
- 229910052719 titanium Inorganic materials 0.000 abstract description 6
- 239000000203 mixture Substances 0.000 abstract description 5
- 238000000151 deposition Methods 0.000 abstract description 4
- 230000008021 deposition Effects 0.000 abstract description 3
- 239000010408 film Substances 0.000 description 52
- 239000011812 mixed powder Substances 0.000 description 10
- 230000015572 biosynthetic process Effects 0.000 description 8
- 238000010438 heat treatment Methods 0.000 description 5
- 229910052750 molybdenum Inorganic materials 0.000 description 5
- 239000002994 raw material Substances 0.000 description 5
- 238000005304 joining Methods 0.000 description 4
- 239000002775 capsule Substances 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000011156 evaluation Methods 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 229910001182 Mo alloy Inorganic materials 0.000 description 2
- 238000005452 bending Methods 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 230000001186 cumulative effect Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000002845 discoloration Methods 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- 238000010998 test method Methods 0.000 description 2
- 229910001316 Ag alloy Inorganic materials 0.000 description 1
- 229910000640 Fe alloy Inorganic materials 0.000 description 1
- 229910001209 Low-carbon steel Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 238000007872 degassing Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000001513 hot isostatic pressing Methods 0.000 description 1
- 238000007731 hot pressing Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000003870 refractory metal Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 230000011218 segmentation Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C14/00—Alloys based on titanium
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
- C23C14/542—Controlling the film thickness or evaporation rate
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
- C23C14/548—Controlling the composition
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
- Powder Metallurgy (AREA)
Abstract
【解決手段】基板上にMo−Ti合金膜を形成するためのスパッタリングターゲットにおいて、Tiを50原子%より高く、60原子%以下含有し、残部Mo及び不可避的不純物からなり、相対密度が98%以上であることを特徴とするスパッタリングターゲット、並びにこれを2以上拡散接合した少なくともその一辺が1000mm以上である接合型スパッタリングターゲット及び接合型スパッタリングターゲットの作製方法。
【選択図】図1
Description
それぞれ単体のMo粉末とTi粉末を、Tiが55原子%となるように混合し、この混合粉末を用いてホットプレス装置での焼結時の圧力条件を、(A)15MPa、(B)18MPa、(C)20MPa、(D)22MPa、(E)24MPa、(F)25MPaとし、それぞれ、相対密度が(A)90%、(B)94%、(C)95%、(D)97%、(E)98%、(F)100%のスパッタリングターゲットを得た。これらのスパッタリングターゲットを用いて、120分間成膜を行い、成膜中の異常放電発生回数を調査した。結果を図1に示す。
(表2)
(比較例1)
Claims (5)
- 基板上にMo−Ti合金膜を形成するためのスパッタリングターゲットにおいて、Tiを50原子%より高く、60原子%以下含有し、残部Mo及び不可避的不純物からなり、相対密度が98%以上であることを特徴とするスパッタリングターゲット。
- 前記スパッタリングターゲットの酸素濃度が、1000〜3500ppmであることを特徴とする請求項1に記載のスパッタリングターゲット。
- 請求項2に記載されたスパッタリングターゲットを2以上拡散接合してなる接合型スパッタリングターゲットであって、この接合型スパッタリングターゲットの少なくとも一辺が1000mm以上であることを特徴とする接合型スパッタリングターゲット。
- 請求項2に記載されたスパッタリングターゲットを粉末焼結法又は溶解法により作製し、得られた各スパッタリングターゲットの端面同士を拡散接合することを特徴とする接合型スパッタリングターゲットの作製方法。
- 前記拡散接合において、酸素濃度が1000〜3500ppmであるMo−Ti粉末をインサート材として用いることを特徴とする請求項4記載の接合型スパッタリングターゲットの作製方法。
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006124829A JP5210498B2 (ja) | 2006-04-28 | 2006-04-28 | 接合型スパッタリングターゲット及びその作製方法 |
US11/783,260 US20070251820A1 (en) | 2006-04-28 | 2007-04-06 | Sputtering target as well as a joined type sputtering target assembly and a method of making such a joined type sputtering target assembly |
TW096112725A TWI403600B (zh) | 2006-04-28 | 2007-04-11 | 濺鍍靶及接合型濺鍍靶及其製作方法 |
KR1020070036979A KR20070106402A (ko) | 2006-04-28 | 2007-04-16 | 스퍼터링 타겟, 및 접합형 스퍼터링 타겟과 그 제조 방법 |
CN2007101008119A CN101063194B (zh) | 2006-04-28 | 2007-04-18 | 溅射靶、以及接合型溅射靶及其制作方法 |
HK08100733.4A HK1110360A1 (en) | 2006-04-28 | 2008-01-21 | Sputtering target as well as a joined type sputtering target assembly and a method of making such a joined type sputtering target assembly |
KR1020140008497A KR20140030282A (ko) | 2006-04-28 | 2014-01-23 | 스퍼터링 타겟, 및 접합형 스퍼터링 타겟과 그 제조 방법 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006124829A JP5210498B2 (ja) | 2006-04-28 | 2006-04-28 | 接合型スパッタリングターゲット及びその作製方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2007297654A true JP2007297654A (ja) | 2007-11-15 |
JP5210498B2 JP5210498B2 (ja) | 2013-06-12 |
Family
ID=38647310
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006124829A Active JP5210498B2 (ja) | 2006-04-28 | 2006-04-28 | 接合型スパッタリングターゲット及びその作製方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US20070251820A1 (ja) |
JP (1) | JP5210498B2 (ja) |
KR (2) | KR20070106402A (ja) |
CN (1) | CN101063194B (ja) |
HK (1) | HK1110360A1 (ja) |
TW (1) | TWI403600B (ja) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008255440A (ja) * | 2007-04-06 | 2008-10-23 | Hitachi Metals Ltd | MoTi合金スパッタリングターゲット材 |
WO2011052171A1 (ja) * | 2009-10-26 | 2011-05-05 | 株式会社アルバック | チタン含有スパッタリングターゲットの製造方法 |
JP2013082998A (ja) * | 2011-09-26 | 2013-05-09 | Hitachi Metals Ltd | MoTiターゲット材およびその製造方法 |
JP2014519549A (ja) * | 2011-05-10 | 2014-08-14 | エイチ.シー.スターク インク. | 複合ターゲット |
JP2015522711A (ja) * | 2012-05-09 | 2015-08-06 | ハー ツェー シュタルク インコーポレイテッドH.C. Starck, Inc. | インターフェース部分を有するマルチブロックスパッタリングターゲット、ならびに関連方法および物品 |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7837929B2 (en) * | 2005-10-20 | 2010-11-23 | H.C. Starck Inc. | Methods of making molybdenum titanium sputtering plates and targets |
US20080078268A1 (en) | 2006-10-03 | 2008-04-03 | H.C. Starck Inc. | Process for preparing metal powders having low oxygen content, powders so-produced and uses thereof |
US20080145688A1 (en) | 2006-12-13 | 2008-06-19 | H.C. Starck Inc. | Method of joining tantalum clade steel structures |
US8197894B2 (en) | 2007-05-04 | 2012-06-12 | H.C. Starck Gmbh | Methods of forming sputtering targets |
AT10578U1 (de) * | 2007-12-18 | 2009-06-15 | Plansee Metall Gmbh | Dunnschichtsolarzelle mit molybdan-haltiger ruckelektrodenschicht |
US8246903B2 (en) | 2008-09-09 | 2012-08-21 | H.C. Starck Inc. | Dynamic dehydriding of refractory metal powders |
US8449817B2 (en) | 2010-06-30 | 2013-05-28 | H.C. Stark, Inc. | Molybdenum-containing targets comprising three metal elements |
US8449818B2 (en) | 2010-06-30 | 2013-05-28 | H. C. Starck, Inc. | Molybdenum containing targets |
US9120183B2 (en) * | 2011-09-29 | 2015-09-01 | H.C. Starck Inc. | Methods of manufacturing large-area sputtering targets |
CN103740979B (zh) * | 2013-12-30 | 2016-04-06 | 安泰科技股份有限公司 | 一种高密度、大尺寸、高均匀性钼钛合金靶材的制备方法 |
KR20170016090A (ko) | 2015-08-03 | 2017-02-13 | 희성금속 주식회사 | 재활용 스퍼터링 타겟 및 이의 제조방법 |
CN115261809B (zh) * | 2022-07-25 | 2024-05-14 | 宁波江丰电子材料股份有限公司 | 一种管状靶材的制备方法 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH1174218A (ja) * | 1997-06-17 | 1999-03-16 | Yamaha Corp | 半導体装置及びその製造方法 |
JPH11246967A (ja) * | 1998-03-04 | 1999-09-14 | Hitachi Metals Ltd | IrMn系合金成膜用ターゲット、その製造方法およびそれを用いた反強磁性膜 |
JP2005029862A (ja) * | 2003-07-10 | 2005-02-03 | Hitachi Metals Ltd | 薄膜形成用スパッタリングターゲット |
JP2005097697A (ja) * | 2003-09-26 | 2005-04-14 | Toshiba Corp | スパッタリングターゲットとその製造方法 |
JP2006114307A (ja) * | 2004-10-14 | 2006-04-27 | Canon Inc | 構造体、電子放出素子、2次電池、電子源、画像表示装置、情報表示再生装置及びそれらの製造方法 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0791636B2 (ja) * | 1987-03-09 | 1995-10-04 | 日立金属株式会社 | スパツタリングタ−ゲツトおよびその製造方法 |
JP2989169B2 (ja) * | 1997-08-08 | 1999-12-13 | 日立金属株式会社 | Ni−Al系金属間化合物ターゲットおよびその製造方法ならびに磁気記録媒体 |
US7837929B2 (en) * | 2005-10-20 | 2010-11-23 | H.C. Starck Inc. | Methods of making molybdenum titanium sputtering plates and targets |
-
2006
- 2006-04-28 JP JP2006124829A patent/JP5210498B2/ja active Active
-
2007
- 2007-04-06 US US11/783,260 patent/US20070251820A1/en not_active Abandoned
- 2007-04-11 TW TW096112725A patent/TWI403600B/zh active
- 2007-04-16 KR KR1020070036979A patent/KR20070106402A/ko active Application Filing
- 2007-04-18 CN CN2007101008119A patent/CN101063194B/zh active Active
-
2008
- 2008-01-21 HK HK08100733.4A patent/HK1110360A1/xx not_active IP Right Cessation
-
2014
- 2014-01-23 KR KR1020140008497A patent/KR20140030282A/ko not_active Application Discontinuation
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH1174218A (ja) * | 1997-06-17 | 1999-03-16 | Yamaha Corp | 半導体装置及びその製造方法 |
JPH11246967A (ja) * | 1998-03-04 | 1999-09-14 | Hitachi Metals Ltd | IrMn系合金成膜用ターゲット、その製造方法およびそれを用いた反強磁性膜 |
JP2005029862A (ja) * | 2003-07-10 | 2005-02-03 | Hitachi Metals Ltd | 薄膜形成用スパッタリングターゲット |
JP2005097697A (ja) * | 2003-09-26 | 2005-04-14 | Toshiba Corp | スパッタリングターゲットとその製造方法 |
JP2006114307A (ja) * | 2004-10-14 | 2006-04-27 | Canon Inc | 構造体、電子放出素子、2次電池、電子源、画像表示装置、情報表示再生装置及びそれらの製造方法 |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008255440A (ja) * | 2007-04-06 | 2008-10-23 | Hitachi Metals Ltd | MoTi合金スパッタリングターゲット材 |
WO2011052171A1 (ja) * | 2009-10-26 | 2011-05-05 | 株式会社アルバック | チタン含有スパッタリングターゲットの製造方法 |
CN102597301A (zh) * | 2009-10-26 | 2012-07-18 | 株式会社爱发科 | 含钛溅射靶的制造方法 |
JP2014519549A (ja) * | 2011-05-10 | 2014-08-14 | エイチ.シー.スターク インク. | 複合ターゲット |
JP2016065307A (ja) * | 2011-05-10 | 2016-04-28 | エイチ.シー.スターク インク. | 複合ターゲット |
US9922808B2 (en) | 2011-05-10 | 2018-03-20 | H.C. Starck Inc. | Multi-block sputtering target and associated methods and articles |
JP2013082998A (ja) * | 2011-09-26 | 2013-05-09 | Hitachi Metals Ltd | MoTiターゲット材およびその製造方法 |
JP2015522711A (ja) * | 2012-05-09 | 2015-08-06 | ハー ツェー シュタルク インコーポレイテッドH.C. Starck, Inc. | インターフェース部分を有するマルチブロックスパッタリングターゲット、ならびに関連方法および物品 |
JP2016216823A (ja) * | 2012-05-09 | 2016-12-22 | ハー ツェー シュタルク インコーポレイテッドH.C. Starck, Inc. | インターフェース部分を有するマルチブロックスパッタリングターゲット、ならびに関連方法および物品 |
Also Published As
Publication number | Publication date |
---|---|
HK1110360A1 (en) | 2008-07-11 |
CN101063194A (zh) | 2007-10-31 |
TW200808989A (en) | 2008-02-16 |
JP5210498B2 (ja) | 2013-06-12 |
US20070251820A1 (en) | 2007-11-01 |
CN101063194B (zh) | 2011-08-10 |
KR20070106402A (ko) | 2007-11-01 |
TWI403600B (zh) | 2013-08-01 |
KR20140030282A (ko) | 2014-03-11 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5210498B2 (ja) | 接合型スパッタリングターゲット及びその作製方法 | |
KR101370189B1 (ko) | 몰리브덴 티타늄 스퍼터링 플레이트 및 타겟의 제조 방법 | |
AU2006243448B2 (en) | Coating process for manufacture or reprocessing of sputter targets and X-ray anodes | |
JP4432015B2 (ja) | 薄膜配線形成用スパッタリングターゲット | |
JP5203908B2 (ja) | Ni−Mo系合金スパッタリングターゲット板 | |
JP6479788B2 (ja) | スパッタリングターゲット及びその製造方法 | |
JP4415303B2 (ja) | 薄膜形成用スパッタリングターゲット | |
JPWO2009116213A1 (ja) | 焼結体ターゲット及び焼結体の製造方法 | |
JP2011523978A (ja) | モリブデン−ニオブ合金、かかる合金を含有するスパッタリングターゲット、かかるターゲットの製造方法、それから製造される薄膜、およびその使用 | |
JP3967067B2 (ja) | スパッタリングターゲット | |
JP2008255440A (ja) | MoTi合金スパッタリングターゲット材 | |
WO2007043215A1 (ja) | 高純度Ru合金ターゲット及びその製造方法並びにスパッタ膜 | |
JPH1150242A (ja) | 電極膜形成用Cu系スパッタリングターゲットおよびその製造方法ならびにCu系電極膜 | |
JP4427831B2 (ja) | スパッタリングターゲットおよびその製造方法 | |
JP6048651B2 (ja) | スパッタリングターゲットおよびその製造方法 | |
JP2020158880A (ja) | Mo合金ターゲット材およびその製造方法 | |
US20090134020A1 (en) | Sputtering target and process for producing the same | |
JP2010150658A (ja) | アルミニウム含有ターゲットの製造方法 | |
KR20150021891A (ko) | 피복층 형성용 스퍼터링 타깃재 및 그 제조 방법 | |
JP2003171760A (ja) | タングステンスパッタリングターゲット | |
US20210040601A1 (en) | Sputtering Target and Method for Producing Sputtering Target | |
TWI715467B (zh) | 鉬合金靶材及其製造方法 | |
US20230220538A1 (en) | METAL-Si BASED POWDER, METHOD FOR PRODUCING SAME, METAL-Si BASED SINTERED BODY, SPUTTERING TARGET, AND METAL-Si BASED THIN FILM MANUFACTURING METHOD | |
KR20090112478A (ko) | 전자파 차폐용 Ag계 재료 및 박막 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20090417 |
|
A711 | Notification of change in applicant |
Free format text: JAPANESE INTERMEDIATE CODE: A712 Effective date: 20101109 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20101216 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20120313 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20120501 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20130212 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20130225 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20160301 Year of fee payment: 3 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5210498 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |