CN102597301B - 含钛溅射靶的制造方法 - Google Patents

含钛溅射靶的制造方法 Download PDF

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Publication number
CN102597301B
CN102597301B CN201080048483.2A CN201080048483A CN102597301B CN 102597301 B CN102597301 B CN 102597301B CN 201080048483 A CN201080048483 A CN 201080048483A CN 102597301 B CN102597301 B CN 102597301B
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CN
China
Prior art keywords
powder
sintering
sputtering target
titanium
metal
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CN201080048483.2A
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English (en)
Chinese (zh)
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CN102597301A (zh
Inventor
高桥一寿
新田纯一
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Ulvac Inc
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Ulvac Inc
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Publication of CN102597301A publication Critical patent/CN102597301A/zh
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Publication of CN102597301B publication Critical patent/CN102597301B/zh
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
    • B22F3/12—Both compacting and sintering
    • B22F3/14—Both compacting and sintering simultaneously
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
    • B22F3/24—After-treatment of workpieces or articles
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F9/00—Making metallic powder or suspensions thereof
    • B22F9/02—Making metallic powder or suspensions thereof using physical processes
    • B22F9/06—Making metallic powder or suspensions thereof using physical processes starting from liquid material
    • B22F9/08—Making metallic powder or suspensions thereof using physical processes starting from liquid material by casting, e.g. through sieves or in water, by atomising or spraying
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F2998/00—Supplementary information concerning processes or compositions relating to powder metallurgy
    • B22F2998/10—Processes characterised by the sequence of their steps

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Physical Vapour Deposition (AREA)
  • Powder Metallurgy (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Manufacture Of Metal Powder And Suspensions Thereof (AREA)
CN201080048483.2A 2009-10-26 2010-10-22 含钛溅射靶的制造方法 Active CN102597301B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2009-245325 2009-10-26
JP2009245325A JP2011089188A (ja) 2009-10-26 2009-10-26 チタン含有スパッタリングターゲットの製造方法
PCT/JP2010/006262 WO2011052171A1 (ja) 2009-10-26 2010-10-22 チタン含有スパッタリングターゲットの製造方法

Publications (2)

Publication Number Publication Date
CN102597301A CN102597301A (zh) 2012-07-18
CN102597301B true CN102597301B (zh) 2014-03-26

Family

ID=43921606

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201080048483.2A Active CN102597301B (zh) 2009-10-26 2010-10-22 含钛溅射靶的制造方法

Country Status (5)

Country Link
US (1) US20120217158A1 (enExample)
JP (1) JP2011089188A (enExample)
KR (1) KR20120064723A (enExample)
CN (1) CN102597301B (enExample)
WO (1) WO2011052171A1 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103215541A (zh) * 2013-03-26 2013-07-24 无锡舒玛天科新能源技术有限公司 一种平面铜铟镓硒溅射靶材的制备方法
CN106378455A (zh) * 2015-07-31 2017-02-08 汉能新材料科技有限公司 一种钼合金旋转金属管材及其制备方法
ES3041454T3 (en) 2018-12-21 2025-11-12 Emz Hanauer Gmbh & Co Kgaa System for operating a refuse container and method for operating a refuse container
CN110551919A (zh) * 2019-09-23 2019-12-10 西安赛特金属材料开发有限公司 钛钼合金的制备方法
CN116377403B (zh) * 2023-04-27 2024-02-02 西安理工大学 钼钛靶材的制备方法
WO2025037642A1 (ja) * 2023-08-17 2025-02-20 東ソー株式会社 金属スパッタリングターゲット、金属スパッタリングターゲット構造体及びこれらを用いた膜の製造方法、並びに金属スパッタリングターゲットの製造方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0575654A1 (en) * 1990-06-15 1993-12-29 Hitachi Metals, Ltd. Titanium-tungsten target material for sputtering and manufacturing method therefor
CN1660526A (zh) * 2004-02-27 2005-08-31 日立金属株式会社 制备Mo合金制靶材料的方法
JP2007297654A (ja) * 2006-04-28 2007-11-15 Ulvac Material Kk スパッタリングターゲット、並びに接合型スパッタリングターゲット及びその作製方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3073764B2 (ja) * 1990-11-27 2000-08-07 日立金属株式会社 Ｔｉ―Ｗターゲット材およびその製造方法
JP2859466B2 (ja) * 1990-06-15 1999-02-17 日立金属株式会社 Ｔｉ−Ｗターゲット材およびその製造方法
US5234487A (en) * 1991-04-15 1993-08-10 Tosoh Smd, Inc. Method of producing tungsten-titanium sputter targets and targets produced thereby
JPH0598435A (ja) * 1991-10-07 1993-04-20 Hitachi Metals Ltd Ｔｉ−Ｗターゲツト材およびその製造方法
JPH0610126A (ja) * 1992-06-25 1994-01-18 Hitachi Metals Ltd Ｔｉ−Ｗターゲット材およびその製造方法
JP4578704B2 (ja) * 2001-03-02 2010-11-10 アルバックマテリアル株式会社 Ｗ−Ｔｉターゲット及びその製造方法
US20040016635A1 (en) * 2002-07-19 2004-01-29 Ford Robert B. Monolithic sputtering target assembly
JP4415303B2 (ja) * 2003-07-10 2010-02-17 日立金属株式会社 薄膜形成用スパッタリングターゲット
JP2006028536A (ja) * 2004-07-12 2006-02-02 Hitachi Metals Ltd 焼結Ｍｏ系ターゲット材の製造方法
US7837929B2 (en) * 2005-10-20 2010-11-23 H.C. Starck Inc. Methods of making molybdenum titanium sputtering plates and targets
JP2008255440A (ja) * 2007-04-06 2008-10-23 Hitachi Metals Ltd ＭｏＴｉ合金スパッタリングターゲット材

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0575654A1 (en) * 1990-06-15 1993-12-29 Hitachi Metals, Ltd. Titanium-tungsten target material for sputtering and manufacturing method therefor
CN1660526A (zh) * 2004-02-27 2005-08-31 日立金属株式会社 制备Mo合金制靶材料的方法
JP2007297654A (ja) * 2006-04-28 2007-11-15 Ulvac Material Kk スパッタリングターゲット、並びに接合型スパッタリングターゲット及びその作製方法

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
JP特開2007－297654A 2007.11.15

Also Published As

Publication number Publication date
WO2011052171A1 (ja) 2011-05-05
KR20120064723A (ko) 2012-06-19
CN102597301A (zh) 2012-07-18
US20120217158A1 (en) 2012-08-30
JP2011089188A (ja) 2011-05-06

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