KR20120064723A - 티탄 함유 스퍼터링 타겟의 제조방법 - Google Patents

티탄 함유 스퍼터링 타겟의 제조방법 Download PDF

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Publication number
KR20120064723A
KR20120064723A KR1020127011776A KR20127011776A KR20120064723A KR 20120064723 A KR20120064723 A KR 20120064723A KR 1020127011776 A KR1020127011776 A KR 1020127011776A KR 20127011776 A KR20127011776 A KR 20127011776A KR 20120064723 A KR20120064723 A KR 20120064723A
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KR
South Korea
Prior art keywords
titanium
metal powder
sputtering target
powder
sintering
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1020127011776A
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English (en)
Korean (ko)
Inventor
카즈토시 타카하시
쥰이치 니타
Original Assignee
가부시키가이샤 아루박
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Publication date
Application filed by 가부시키가이샤 아루박 filed Critical 가부시키가이샤 아루박
Publication of KR20120064723A publication Critical patent/KR20120064723A/ko
Ceased legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
    • B22F3/12—Both compacting and sintering
    • B22F3/14—Both compacting and sintering simultaneously
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
    • B22F3/24—After-treatment of workpieces or articles
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F9/00—Making metallic powder or suspensions thereof
    • B22F9/02—Making metallic powder or suspensions thereof using physical processes
    • B22F9/06—Making metallic powder or suspensions thereof using physical processes starting from liquid material
    • B22F9/08—Making metallic powder or suspensions thereof using physical processes starting from liquid material by casting, e.g. through sieves or in water, by atomising or spraying
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F2998/00—Supplementary information concerning processes or compositions relating to powder metallurgy
    • B22F2998/10—Processes characterised by the sequence of their steps

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Physical Vapour Deposition (AREA)
  • Powder Metallurgy (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Manufacture Of Metal Powder And Suspensions Thereof (AREA)
KR1020127011776A 2009-10-26 2010-10-22 티탄 함유 스퍼터링 타겟의 제조방법 Ceased KR20120064723A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2009-245325 2009-10-26
JP2009245325A JP2011089188A (ja) 2009-10-26 2009-10-26 チタン含有スパッタリングターゲットの製造方法

Publications (1)

Publication Number Publication Date
KR20120064723A true KR20120064723A (ko) 2012-06-19

Family

ID=43921606

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020127011776A Ceased KR20120064723A (ko) 2009-10-26 2010-10-22 티탄 함유 스퍼터링 타겟의 제조방법

Country Status (5)

Country Link
US (1) US20120217158A1 (enExample)
JP (1) JP2011089188A (enExample)
KR (1) KR20120064723A (enExample)
CN (1) CN102597301B (enExample)
WO (1) WO2011052171A1 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103215541A (zh) * 2013-03-26 2013-07-24 无锡舒玛天科新能源技术有限公司 一种平面铜铟镓硒溅射靶材的制备方法
CN106378455A (zh) * 2015-07-31 2017-02-08 汉能新材料科技有限公司 一种钼合金旋转金属管材及其制备方法
EP3671664B1 (de) 2018-12-21 2025-07-30 emz-Hanauer GmbH & Co. KGaA System zum betreiben eines müllcontainers und verfahren zum betreiben eines müllcontainers
CN110551919A (zh) * 2019-09-23 2019-12-10 西安赛特金属材料开发有限公司 钛钼合金的制备方法
CN116377403B (zh) * 2023-04-27 2024-02-02 西安理工大学 钼钛靶材的制备方法
TW202509256A (zh) * 2023-08-17 2025-03-01 日商東曹股份有限公司 金屬濺鍍靶、金屬濺鍍靶結構體、使用其的膜的製造方法、以及金屬濺鍍靶的製造方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2859466B2 (ja) * 1990-06-15 1999-02-17 日立金属株式会社 Ｔｉ−Ｗターゲット材およびその製造方法
JP3073764B2 (ja) * 1990-11-27 2000-08-07 日立金属株式会社 Ｔｉ―Ｗターゲット材およびその製造方法
US5160534A (en) * 1990-06-15 1992-11-03 Hitachi Metals Ltd. Titanium-tungsten target material for sputtering and manufacturing method therefor
US5234487A (en) * 1991-04-15 1993-08-10 Tosoh Smd, Inc. Method of producing tungsten-titanium sputter targets and targets produced thereby
JPH0598435A (ja) * 1991-10-07 1993-04-20 Hitachi Metals Ltd Ｔｉ−Ｗターゲツト材およびその製造方法
JPH0610126A (ja) * 1992-06-25 1994-01-18 Hitachi Metals Ltd Ｔｉ−Ｗターゲット材およびその製造方法
JP4578704B2 (ja) * 2001-03-02 2010-11-10 アルバックマテリアル株式会社 Ｗ−Ｔｉターゲット及びその製造方法
US20040016635A1 (en) * 2002-07-19 2004-01-29 Ford Robert B. Monolithic sputtering target assembly
JP4415303B2 (ja) * 2003-07-10 2010-02-17 日立金属株式会社 薄膜形成用スパッタリングターゲット
JP4110533B2 (ja) * 2004-02-27 2008-07-02 日立金属株式会社 Ｍｏ系ターゲット材の製造方法
JP2006028536A (ja) * 2004-07-12 2006-02-02 Hitachi Metals Ltd 焼結Ｍｏ系ターゲット材の製造方法
US7837929B2 (en) * 2005-10-20 2010-11-23 H.C. Starck Inc. Methods of making molybdenum titanium sputtering plates and targets
JP5210498B2 (ja) * 2006-04-28 2013-06-12 株式会社アルバック 接合型スパッタリングターゲット及びその作製方法
JP2008255440A (ja) * 2007-04-06 2008-10-23 Hitachi Metals Ltd ＭｏＴｉ合金スパッタリングターゲット材

Also Published As

Publication number Publication date
WO2011052171A1 (ja) 2011-05-05
US20120217158A1 (en) 2012-08-30
CN102597301B (zh) 2014-03-26
CN102597301A (zh) 2012-07-18
JP2011089188A (ja) 2011-05-06

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