JP2011086792A - 半導体製造装置および半導体製造方法 - Google Patents
半導体製造装置および半導体製造方法 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 36
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 24
- 238000000034 method Methods 0.000 title claims abstract description 21
- 230000007246 mechanism Effects 0.000 claims abstract description 22
- 230000008569 process Effects 0.000 claims abstract description 17
- 238000010438 heat treatment Methods 0.000 claims abstract description 6
- 238000007599 discharging Methods 0.000 claims abstract description 5
- 239000007789 gas Substances 0.000 claims description 62
- 239000011261 inert gas Substances 0.000 claims description 6
- 230000006866 deterioration Effects 0.000 abstract description 8
- 238000006243 chemical reaction Methods 0.000 description 19
- 230000015572 biosynthetic process Effects 0.000 description 7
- 230000008021 deposition Effects 0.000 description 7
- 238000000859 sublimation Methods 0.000 description 5
- 230000008022 sublimation Effects 0.000 description 5
- 238000011109 contamination Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 description 3
- 239000005052 trichlorosilane Substances 0.000 description 3
- 238000002955 isolation Methods 0.000 description 2
- UIUXUFNYAYAMOE-UHFFFAOYSA-N methylsilane Chemical compound [SiH3]C UIUXUFNYAYAMOE-UHFFFAOYSA-N 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- KCWYOFZQRFCIIE-UHFFFAOYSA-N ethylsilane Chemical compound CC[SiH3] KCWYOFZQRFCIIE-UHFFFAOYSA-N 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
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- H01L21/02617—Deposition types
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
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- C—CHEMISTRY; METALLURGY
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
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- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/10—Heating of the reaction chamber or the substrate
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Abstract
【解決手段】本発明の半導体製造装置は、ウェーハが導入される反応炉と、反応炉にプロセスガスを供給するための第1のガス供給機構と、反応炉よりガスを排出するためのガス排出機構と、ウェーハを載置するウェーハ支持部材と、ウェーハ支持部材を載置するリングと、リングと接続され、ウェーハを回転させるための回転駆動制御機構と、リング内に設置され、ウェーハを所定の温度に加熱するために設けられ、少なくとも表面にSiC層を有するヒータエレメントと、このヒータエレメントと一体成型され、少なくとも表面にSiC層を有するヒータ電極部と、を有するヒータと、リング内にSiCソースガスを供給する第2のガス供給機構と、を備えることを特徴とする。
【選択図】図1
Description
図1に本実施形態の半導体製造装置であるエピタキシャル成長装置の断面図を示す。図に示すように、例えばφ200mmのウェーハwが成膜処理される反応炉11には、反応炉11上方より、トリクロロシラン、ジクロロシランなどのソースガスを含むプロセスガスなどを、所定の流量でウェーハw上に供給するための第1のガス供給機構(図示せず)と接続されたガス供給口12が設置されている。反応炉11下方には、例えば2箇所にガスを排出し、反応炉11内の圧力を一定(常圧)に制御するためのガス排出機構(図示せず)と接続されたガス排出口13が設置されている。
CH3SiH3→SiC+3H2
を右方向にシフトさせることにより、SiC分圧を上げ、SiCの昇華を抑制する。
本実施形態において、実施形態1とエピタキシャル成長装置の構成は同様であるが、ウェーハwを保持するための保持部材を、ウェーハwの裏面全面を保持するサセプタ25とする点で実施形態1と異なっている。
本実施形態において、実施形態1とエピタキシャル成長装置の構成は同様であるが、ウェーハwとヒータエレメントとの間に、不活性ガスを供給するガス供給ノズルが配置されている点で実施形態1と異なっている。
本実施形態において、実施形態1とエピタキシャル成長装置の構成は同様であるが、リングの上部に複数の開口部が設けられている点で実施形態1と異なっている。
12…ガス供給口
13…ガス排出口
14…整流板
15…ホルダ
16…リング
17…回転駆動制御機構
18…ヒータ
19…ブースバー
20…ヒータシャフト
21…電極
22、32…ガス供給ノズル
25…サセプタ
41…開口部
Claims (5)
- ウェーハが導入される反応炉と、
前記反応炉にプロセスガスを供給するための第1のガス供給機構と、
前記反応炉よりガスを排出するためのガス排出機構と、
前記ウェーハを載置するウェーハ支持部材と、
前記ウェーハ支持部材を載置するリングと、
前記リングと接続され、前記ウェーハを回転させるための回転駆動制御機構と、
前記リング内に設置され、前記ウェーハを所定の温度に加熱するために設けられ、少なくとも表面にSiC層を有するヒータエレメントと、このヒータエレメントと一体成型され、少なくとも表面にSiC層を有するヒータ電極部と、を有するヒータと、
前記リング内にSiCソースガスを供給する第2のガス供給機構と、
を備えることを特徴とする半導体製造装置。 - 前記ウェーハ支持部材は、前記ウェーハ裏面全面を保持することを特徴とする請求項1に記載の半導体製造装置。
- 前記ウェーハと前記ヒータエレメントとの間に、不活性ガスを供給する第3のガス供給機構を備えることを特徴とする請求項1又は請求項2に記載の半導体製造装置。
- 前記リングは、前記ヒータエレメントの裏面の水平位置より高い位置に、前記SiCソースガスを排出する開口部を備えることを特徴とする請求項1から請求項3のいずれか1項に記載の半導体製造装置。
- 反応炉内にウェーハを導入し、
少なくとも表面にSiC層を有するヒータ電極部に電圧印加し、前記ヒータ電極部と一体成型され、少なくとも表面にSiC層を有するヒータエレメントを発熱させることにより、前記ウェーハを所定温度で加熱し、
前記ウェーハを回転させ、前記ウェーハ上にプロセスガスを供給することにより、前記ウェーハ上に成膜するとともに、前記ヒータエレメントの裏面側に、SiCソースガスを供給することを特徴とする半導体製造方法。
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JP2009238931A JP5341706B2 (ja) | 2009-10-16 | 2009-10-16 | 半導体製造装置および半導体製造方法 |
KR1020100097170A KR101154639B1 (ko) | 2009-10-16 | 2010-10-06 | 반도체 제조장치와 반도체 제조방법 |
US12/903,384 US8337622B2 (en) | 2009-10-16 | 2010-10-13 | Manufacturing apparatus and method for semiconductor device |
TW099135261A TWI479571B (zh) | 2009-10-16 | 2010-10-15 | 半導體裝置之製造裝置及製造方法 |
US13/685,870 US8921212B2 (en) | 2009-10-16 | 2012-11-27 | Manufacturing apparatus and method for semiconductor device |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101358063B1 (ko) | 2011-05-19 | 2014-02-03 | 가부시키가이샤 뉴플레어 테크놀로지 | 반도체 제조 장치 및 반도체 제조 방법 |
KR20150077852A (ko) * | 2013-12-30 | 2015-07-08 | 주식회사 테스 | 히터 보호용 프로세스 키트 및 이를 이용한 챔버 세정방법 |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5443096B2 (ja) * | 2009-08-12 | 2014-03-19 | 株式会社ニューフレアテクノロジー | 半導体製造装置および半導体製造方法 |
US9018567B2 (en) * | 2011-07-13 | 2015-04-28 | Asm International N.V. | Wafer processing apparatus with heated, rotating substrate support |
DE102011080202A1 (de) * | 2011-08-01 | 2013-02-07 | Gebr. Schmid Gmbh | Vorrichtung und Verfahren zur Herstellung von dünnen Schichten |
US10727092B2 (en) * | 2012-10-17 | 2020-07-28 | Applied Materials, Inc. | Heated substrate support ring |
US10403521B2 (en) * | 2013-03-13 | 2019-09-03 | Applied Materials, Inc. | Modular substrate heater for efficient thermal cycling |
JP2016529733A (ja) * | 2013-08-30 | 2016-09-23 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | 基板支持システム |
WO2015138094A1 (en) * | 2014-03-12 | 2015-09-17 | Applied Materials, Inc. | Wafer rotation in a semiconductor chamber |
DE102014117228B4 (de) * | 2014-11-25 | 2022-10-20 | Suss Microtec Lithography Gmbh | Backvorrichtung für einen Wafer, der mit einer ein Lösungsmittel enthaltenden Beschichtung beschichtet ist |
KR101734129B1 (ko) * | 2015-05-14 | 2017-05-11 | 주식회사 대화알로이테크 | 웨이퍼 히팅장치 |
JP6845286B2 (ja) * | 2019-08-05 | 2021-03-17 | 日本発條株式会社 | ステージ、ステージを備える成膜装置または膜加工装置、および基板の温度制御方法 |
CN115505897B (zh) * | 2022-09-22 | 2023-10-31 | 江苏第三代半导体研究院有限公司 | 一种用于制备外延片的转盘式反应器、制备方法及用途 |
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Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004022688A (ja) * | 2002-06-14 | 2004-01-22 | Epiquest:Kk | SiCウエハー酸化装置 |
JP2007288163A (ja) * | 2006-03-24 | 2007-11-01 | Nuflare Technology Inc | 半導体製造装置及びヒータ |
JP2008004767A (ja) * | 2006-06-22 | 2008-01-10 | Nuflare Technology Inc | 半導体製造装置の保守方法、半導体製造装置及び半導体製造方法 |
JP2008308701A (ja) * | 2005-02-14 | 2008-12-25 | Toyo Tanso Kk | 炭化タンタル被覆炭素材料およびその製造方法 |
JP2009135202A (ja) * | 2007-11-29 | 2009-06-18 | Nuflare Technology Inc | 半導体製造装置および半導体製造方法 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4271103A (en) * | 1979-01-26 | 1981-06-02 | Mcalister Roy E | Plastic solar panel structure and method for making the same |
US6936102B1 (en) * | 1999-08-02 | 2005-08-30 | Tokyo Electron Limited | SiC material, semiconductor processing equipment and method of preparing SiC material therefor |
US6474986B2 (en) * | 1999-08-11 | 2002-11-05 | Tokyo Electron Limited | Hot plate cooling method and heat processing apparatus |
US6461428B2 (en) | 1999-12-06 | 2002-10-08 | Toshiba Ceramics Co., Ltd. | Method and apparatus for controlling rise and fall of temperature in semiconductor substrates |
WO2002052062A1 (fr) * | 2000-12-27 | 2002-07-04 | Tokyo Electron Limited | Dispositif de traitement |
JP2003213421A (ja) * | 2002-01-21 | 2003-07-30 | Hitachi Kokusai Electric Inc | 基板処理装置 |
JP5025109B2 (ja) * | 2005-08-26 | 2012-09-12 | 東京エレクトロン株式会社 | 基板載置機構、基板処理装置、および基板載置機構の製造方法 |
JP2007311558A (ja) * | 2006-05-18 | 2007-11-29 | Toshiba Corp | 気相成長装置および気相成長基板の製造方法 |
JP4262763B2 (ja) * | 2006-08-02 | 2009-05-13 | 株式会社ニューフレアテクノロジー | 半導体製造装置および半導体製造方法 |
US20090181553A1 (en) * | 2008-01-11 | 2009-07-16 | Blake Koelmel | Apparatus and method of aligning and positioning a cold substrate on a hot surface |
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Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004022688A (ja) * | 2002-06-14 | 2004-01-22 | Epiquest:Kk | SiCウエハー酸化装置 |
JP2008308701A (ja) * | 2005-02-14 | 2008-12-25 | Toyo Tanso Kk | 炭化タンタル被覆炭素材料およびその製造方法 |
JP2007288163A (ja) * | 2006-03-24 | 2007-11-01 | Nuflare Technology Inc | 半導体製造装置及びヒータ |
JP2008004767A (ja) * | 2006-06-22 | 2008-01-10 | Nuflare Technology Inc | 半導体製造装置の保守方法、半導体製造装置及び半導体製造方法 |
JP2009135202A (ja) * | 2007-11-29 | 2009-06-18 | Nuflare Technology Inc | 半導体製造装置および半導体製造方法 |
Cited By (3)
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KR101358063B1 (ko) | 2011-05-19 | 2014-02-03 | 가부시키가이샤 뉴플레어 테크놀로지 | 반도체 제조 장치 및 반도체 제조 방법 |
KR20150077852A (ko) * | 2013-12-30 | 2015-07-08 | 주식회사 테스 | 히터 보호용 프로세스 키트 및 이를 이용한 챔버 세정방법 |
KR101587793B1 (ko) * | 2013-12-30 | 2016-01-22 | 주식회사 테스 | 히터 보호용 프로세스 키트 및 이를 이용한 챔버 세정방법 |
Also Published As
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US8337622B2 (en) | 2012-12-25 |
US20110092075A1 (en) | 2011-04-21 |
US8921212B2 (en) | 2014-12-30 |
KR20110042000A (ko) | 2011-04-22 |
JP5341706B2 (ja) | 2013-11-13 |
TW201135846A (en) | 2011-10-16 |
KR101154639B1 (ko) | 2012-06-08 |
US20130084690A1 (en) | 2013-04-04 |
TWI479571B (zh) | 2015-04-01 |
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