KR101154639B1 - 반도체 제조장치와 반도체 제조방법 - Google Patents

반도체 제조장치와 반도체 제조방법 Download PDF

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KR101154639B1
KR101154639B1 KR1020100097170A KR20100097170A KR101154639B1 KR 101154639 B1 KR101154639 B1 KR 101154639B1 KR 1020100097170 A KR1020100097170 A KR 1020100097170A KR 20100097170 A KR20100097170 A KR 20100097170A KR 101154639 B1 KR101154639 B1 KR 101154639B1
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KR
South Korea
Prior art keywords
wafer
sic
gas
heater
ring
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KR1020100097170A
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English (en)
Korean (ko)
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KR20110042000A (ko
Inventor
구니히코 스즈키
신이치 미타니
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가부시키가이샤 뉴플레어 테크놀로지
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Publication of KR20110042000A publication Critical patent/KR20110042000A/ko
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
    • H01L21/02639—Preparation of substrate for selective deposition
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68792—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
KR1020100097170A 2009-10-16 2010-10-06 반도체 제조장치와 반도체 제조방법 KR101154639B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2009-238931 2009-10-16
JP2009238931A JP5341706B2 (ja) 2009-10-16 2009-10-16 半導体製造装置および半導体製造方法

Publications (2)

Publication Number Publication Date
KR20110042000A KR20110042000A (ko) 2011-04-22
KR101154639B1 true KR101154639B1 (ko) 2012-06-08

Family

ID=43879633

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KR1020100097170A KR101154639B1 (ko) 2009-10-16 2010-10-06 반도체 제조장치와 반도체 제조방법

Country Status (4)

Country Link
US (2) US8337622B2 (ja)
JP (1) JP5341706B2 (ja)
KR (1) KR101154639B1 (ja)
TW (1) TWI479571B (ja)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5443096B2 (ja) * 2009-08-12 2014-03-19 株式会社ニューフレアテクノロジー 半導体製造装置および半導体製造方法
JP5802052B2 (ja) 2011-05-19 2015-10-28 株式会社ニューフレアテクノロジー 半導体製造装置及び半導体製造方法
US9018567B2 (en) * 2011-07-13 2015-04-28 Asm International N.V. Wafer processing apparatus with heated, rotating substrate support
DE102011080202A1 (de) * 2011-08-01 2013-02-07 Gebr. Schmid Gmbh Vorrichtung und Verfahren zur Herstellung von dünnen Schichten
US10727092B2 (en) * 2012-10-17 2020-07-28 Applied Materials, Inc. Heated substrate support ring
US10403521B2 (en) * 2013-03-13 2019-09-03 Applied Materials, Inc. Modular substrate heater for efficient thermal cycling
JP2016529733A (ja) * 2013-08-30 2016-09-23 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 基板支持システム
KR101587793B1 (ko) * 2013-12-30 2016-01-22 주식회사 테스 히터 보호용 프로세스 키트 및 이를 이용한 챔버 세정방법
CN106133873B (zh) * 2014-03-12 2019-07-05 应用材料公司 在半导体腔室中的晶片旋转
DE102014117228B4 (de) 2014-11-25 2022-10-20 Suss Microtec Lithography Gmbh Backvorrichtung für einen Wafer, der mit einer ein Lösungsmittel enthaltenden Beschichtung beschichtet ist
KR101734129B1 (ko) * 2015-05-14 2017-05-11 주식회사 대화알로이테크 웨이퍼 히팅장치
JP6845286B2 (ja) * 2019-08-05 2021-03-17 日本発條株式会社 ステージ、ステージを備える成膜装置または膜加工装置、および基板の温度制御方法
CN115505897B (zh) * 2022-09-22 2023-10-31 江苏第三代半导体研究院有限公司 一种用于制备外延片的转盘式反应器、制备方法及用途
CN115506012B (zh) * 2022-09-30 2024-06-14 江苏第三代半导体研究院有限公司 一种用于制备外延片的反应器、制备方法及应用

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US20070221657A1 (en) * 2006-03-24 2007-09-27 Nuflare Technology, Inc. Semiconductor manufacturing equipment and heater
JP2008004767A (ja) * 2006-06-22 2008-01-10 Nuflare Technology Inc 半導体製造装置の保守方法、半導体製造装置及び半導体製造方法

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US4271103A (en) * 1979-01-26 1981-06-02 Mcalister Roy E Plastic solar panel structure and method for making the same
TWI232891B (en) * 1999-08-02 2005-05-21 Tokyo Electron Ltd SiC material, semiconductor device fabricating system and SiC material forming method
US6474986B2 (en) * 1999-08-11 2002-11-05 Tokyo Electron Limited Hot plate cooling method and heat processing apparatus
KR100676404B1 (ko) * 1999-12-06 2007-01-31 도시바 세라믹스 가부시키가이샤 반도체 기판의 온도 승강 제어 방법과 그 장치
KR100881786B1 (ko) * 2000-12-27 2009-02-03 도쿄엘렉트론가부시키가이샤 처리 장치
JP2003213421A (ja) * 2002-01-21 2003-07-30 Hitachi Kokusai Electric Inc 基板処理装置
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JP2007311558A (ja) * 2006-05-18 2007-11-29 Toshiba Corp 気相成長装置および気相成長基板の製造方法
JP4262763B2 (ja) * 2006-08-02 2009-05-13 株式会社ニューフレアテクノロジー 半導体製造装置および半導体製造方法
JP2009135202A (ja) * 2007-11-29 2009-06-18 Nuflare Technology Inc 半導体製造装置および半導体製造方法
US20090181553A1 (en) * 2008-01-11 2009-07-16 Blake Koelmel Apparatus and method of aligning and positioning a cold substrate on a hot surface

Patent Citations (2)

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Publication number Priority date Publication date Assignee Title
US20070221657A1 (en) * 2006-03-24 2007-09-27 Nuflare Technology, Inc. Semiconductor manufacturing equipment and heater
JP2008004767A (ja) * 2006-06-22 2008-01-10 Nuflare Technology Inc 半導体製造装置の保守方法、半導体製造装置及び半導体製造方法

Also Published As

Publication number Publication date
US8921212B2 (en) 2014-12-30
US8337622B2 (en) 2012-12-25
TW201135846A (en) 2011-10-16
KR20110042000A (ko) 2011-04-22
US20110092075A1 (en) 2011-04-21
JP5341706B2 (ja) 2013-11-13
TWI479571B (zh) 2015-04-01
US20130084690A1 (en) 2013-04-04
JP2011086792A (ja) 2011-04-28

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