JP2011080142A5 - - Google Patents

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Publication number
JP2011080142A5
JP2011080142A5 JP2010198850A JP2010198850A JP2011080142A5 JP 2011080142 A5 JP2011080142 A5 JP 2011080142A5 JP 2010198850 A JP2010198850 A JP 2010198850A JP 2010198850 A JP2010198850 A JP 2010198850A JP 2011080142 A5 JP2011080142 A5 JP 2011080142A5
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JP
Japan
Prior art keywords
compound
workpiece
precursor gas
purification
nitrogen
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JP2010198850A
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English (en)
Japanese (ja)
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JP5677700B2 (ja
JP2011080142A (ja
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Priority claimed from US12/565,707 external-priority patent/US8617668B2/en
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Publication of JP2011080142A publication Critical patent/JP2011080142A/ja
Publication of JP2011080142A5 publication Critical patent/JP2011080142A5/ja
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Publication of JP5677700B2 publication Critical patent/JP5677700B2/ja
Expired - Fee Related legal-status Critical Current
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JP2010198850A 2009-09-23 2010-09-06 ビーム誘起処理における窒素ベース化合物の使用 Expired - Fee Related JP5677700B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/565,707 2009-09-23
US12/565,707 US8617668B2 (en) 2009-09-23 2009-09-23 Method of using nitrogen based compounds to reduce contamination in beam-induced thin film deposition

Publications (3)

Publication Number Publication Date
JP2011080142A JP2011080142A (ja) 2011-04-21
JP2011080142A5 true JP2011080142A5 (https=) 2013-10-24
JP5677700B2 JP5677700B2 (ja) 2015-02-25

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JP2010198850A Expired - Fee Related JP5677700B2 (ja) 2009-09-23 2010-09-06 ビーム誘起処理における窒素ベース化合物の使用

Country Status (3)

Country Link
US (1) US8617668B2 (https=)
EP (1) EP2309020B1 (https=)
JP (1) JP5677700B2 (https=)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5650234B2 (ja) 2009-11-16 2015-01-07 エフ・イ−・アイ・カンパニー ビーム処理システムに対するガス送達
EP2402475A1 (en) 2010-06-30 2012-01-04 Fei Company Beam-induced deposition at cryogenic temperatures
US10825685B2 (en) * 2010-08-23 2020-11-03 Exogenesis Corporation Method for neutral beam processing based on gas cluster ion beam technology and articles produced thereby
US8853078B2 (en) 2011-01-30 2014-10-07 Fei Company Method of depositing material
US9090973B2 (en) 2011-01-31 2015-07-28 Fei Company Beam-induced deposition of low-resistivity material
RU2522872C2 (ru) * 2012-06-13 2014-07-20 Федеральное государственное бюджетное образовательное учреждение высшего профессионального образования "Московский государственный технический университет имени Н.Э. Баумана" (МГТУ им. Н.Э. Баумана) Способ азотирования деталей машин с получением наноструктурированного приповерхностного слоя и состав слоя
US10023955B2 (en) 2012-08-31 2018-07-17 Fei Company Seed layer laser-induced deposition
US8872105B2 (en) * 2013-02-19 2014-10-28 Fei Company In situ reactivation of fluorescence marker
EP2787523B1 (en) 2013-04-03 2016-02-10 Fei Company Low energy ion milling or deposition
US9123506B2 (en) 2013-06-10 2015-09-01 Fei Company Electron beam-induced etching
FR3011540B1 (fr) * 2013-10-07 2016-01-01 Centre Nat Rech Scient Procede et systeme de structuration submicrometrique d'une surface de substrat
US20150225845A1 (en) * 2014-02-12 2015-08-13 Electronics And Telecommunications Research Institute Method for forming metal oxide thin film and device for printing metal oxide thin film
EP3062329B1 (en) * 2015-02-25 2016-12-14 Fei Company Multi-source GIS for particle-optical apparatus
US9799490B2 (en) 2015-03-31 2017-10-24 Fei Company Charged particle beam processing using process gas and cooled surface
US9633816B2 (en) 2015-05-18 2017-04-25 Fei Company Electron beam microscope with improved imaging gas and method of use
US10128082B2 (en) * 2015-07-24 2018-11-13 Varian Semiconductor Equipment Associates, Inc. Apparatus and techniques to treat substrates using directional plasma and point of use chemistry
US10538844B2 (en) 2015-09-11 2020-01-21 Fei Company Nanofabrication using a new class of electron beam induced surface processing techniques
KR101723923B1 (ko) * 2015-11-11 2017-04-11 참엔지니어링(주) 증착 장치
US10103008B2 (en) 2016-01-12 2018-10-16 Fei Company Charged particle beam-induced etching
US10865477B2 (en) * 2016-02-08 2020-12-15 Illinois Tool Works Inc. Method and system for the localized deposit of metal on a surface
US10501851B2 (en) 2016-05-12 2019-12-10 Fei Company Attachment of nano-objects to beam-deposited structures
US20220305584A1 (en) * 2021-03-24 2022-09-29 Fei Company In-situ laser redeposition reduction by a controlled gas flow and a system for reducing contamination
CN113403572A (zh) * 2021-04-19 2021-09-17 江苏集创原子团簇科技研究院有限公司 一种带电粒子束处理工件的方法与设备
US20250279259A1 (en) * 2024-03-04 2025-09-04 Fei Company Heating assembly for charged particle beam system

Family Cites Families (51)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US525908A (en) 1894-09-11 Convertible carriage-body
US4266985A (en) * 1979-05-18 1981-05-12 Fujitsu Limited Process for producing a semiconductor device including an ion implantation step in combination with direct thermal nitridation of the silicon substrate
US4605566A (en) * 1983-08-22 1986-08-12 Nec Corporation Method for forming thin films by absorption
JPH0830272B2 (ja) 1983-08-22 1996-03-27 日本電気株式会社 薄膜形成方法
US4522886A (en) * 1984-10-09 1985-06-11 Allied Corporation Method of ion beam synthesis of thin silicon nitride films and resulting articles
DE3513633C2 (de) * 1985-04-16 1994-06-16 Polymer Physik Gmbh Vorrichtung zur Entschwefelung und Denitrierung von Rauchgasen durch Elektronenbestrahlung
US4845054A (en) * 1985-06-14 1989-07-04 Focus Semiconductor Systems, Inc. Low temperature chemical vapor deposition of silicon dioxide films
JPS62195662A (ja) * 1986-02-24 1987-08-28 Seiko Instr & Electronics Ltd マスクリペア方法及び装置
JPH0763064B2 (ja) * 1986-03-31 1995-07-05 株式会社日立製作所 Ｉｃ素子における配線接続方法
JPS62281349A (ja) * 1986-05-29 1987-12-07 Seiko Instr & Electronics Ltd 金属パタ−ン膜の形成方法及びその装置
JPS6380525A (ja) * 1986-09-24 1988-04-11 Semiconductor Energy Lab Co Ltd 被膜形成方法
US4735921A (en) * 1987-05-29 1988-04-05 Patrick Soukiassian Nitridation of silicon and other semiconductors using alkali metal catalysts
JPH0262039A (ja) * 1988-08-29 1990-03-01 Hitachi Ltd 多層素子の微細加工方法およびその装置
JP3004298B2 (ja) 1989-03-31 2000-01-31 株式会社東芝 絶縁膜堆積方法及びそれに用いる集束イオンビーム装置
US5083033A (en) * 1989-03-31 1992-01-21 Kabushiki Kaisha Toshiba Method of depositing an insulating film and a focusing ion beam apparatus
JPH02274867A (ja) * 1989-04-17 1990-11-09 Seiko Instr Inc 複合材料膜の製造方法
US5104684A (en) * 1990-05-25 1992-04-14 Massachusetts Institute Of Technology Ion beam induced deposition of metals
US5196102A (en) * 1991-08-08 1993-03-23 Microelectronics And Computer Technology Corporation Method and apparatus for applying a compound of a metal and a gas onto a surface
JPH0799791B2 (ja) * 1992-04-15 1995-10-25 インターナショナル・ビジネス・マシーンズ・コーポレイション 透明基板上の回路ライン接続方法
DE4222021C2 (de) * 1992-07-04 1994-06-23 Christian Dipl Chem Terfloth Verbindungen zur Abscheidung von Kupferschichten
EP0637057B1 (en) * 1993-07-30 1996-12-11 International Business Machines Corporation Method and apparatus for depositing metal fine lines on a substrate
US5482802A (en) * 1993-11-24 1996-01-09 At&T Corp. Material removal with focused particle beams
US5508368A (en) * 1994-03-03 1996-04-16 Diamonex, Incorporated Ion beam process for deposition of highly abrasion-resistant coatings
AU2914095A (en) * 1994-06-28 1996-01-25 Fei Company Charged particle deposition of electrically insulating films
US5700526A (en) * 1995-05-04 1997-12-23 Schlumberger Technologies Inc. Insulator deposition using focused ion beam
US5948541A (en) * 1996-04-04 1999-09-07 Kennametal Inc. Boron and nitrogen containing coating and method for making
WO1997038355A1 (en) 1996-04-08 1997-10-16 Micrion Corporation Systems and methods for deposition of dielectric films
JPH1090876A (ja) 1996-09-17 1998-04-10 Toshiba Corp 欠陥修正方法および装置
US6042738A (en) * 1997-04-16 2000-03-28 Micrion Corporation Pattern film repair using a focused particle beam system
US5976976A (en) * 1997-08-21 1999-11-02 Micron Technology, Inc. Method of forming titanium silicide and titanium by chemical vapor deposition
US6395128B2 (en) * 1998-02-19 2002-05-28 Micron Technology, Inc. RF powered plasma enhanced chemical vapor deposition reactor and methods of effecting plasma enhanced chemical vapor deposition
US6261850B1 (en) * 1998-09-03 2001-07-17 Micron Technology, Inc. Direct writing of low carbon conductive material
US6268608B1 (en) * 1998-10-09 2001-07-31 Fei Company Method and apparatus for selective in-situ etching of inter dielectric layers
US6616972B1 (en) * 1999-02-24 2003-09-09 Air Products And Chemicals, Inc. Synthesis of metal oxide and oxynitride
US6140249A (en) * 1999-08-27 2000-10-31 Micron Technology, Inc. Low dielectric constant dielectric films and process for making the same
KR100799014B1 (ko) * 2000-11-29 2008-01-28 에스아이아이 나노 테크놀로지 가부시키가이샤 초 미세 입체구조의 제조 방법 및 그 장치
WO2002070142A1 (en) * 2000-12-06 2002-09-12 Angstron Systems, Inc. Method and apparatus for improved temperature control in atomic layer deposition
US6492261B2 (en) * 2000-12-30 2002-12-10 Intel Corporation Focused ion beam metal deposition
US6838380B2 (en) * 2001-01-26 2005-01-04 Fei Company Fabrication of high resistivity structures using focused ion beams
US6753538B2 (en) * 2001-07-27 2004-06-22 Fei Company Electron beam processing
US6812152B2 (en) * 2001-08-09 2004-11-02 Comlase Ab Method to obtain contamination free laser mirrors and passivation of these
KR100974778B1 (ko) * 2003-06-30 2010-08-06 삼성전자주식회사 유기금속 전구체 조성물 및 이를 이용한 금속 필름 또는패턴 형성방법
US7241361B2 (en) * 2004-02-20 2007-07-10 Fei Company Magnetically enhanced, inductively coupled plasma source for a focused ion beam system
US7824498B2 (en) * 2004-02-24 2010-11-02 Applied Materials, Inc. Coating for reducing contamination of substrates during processing
ATE532203T1 (de) * 2004-08-27 2011-11-15 Fei Co Lokalisierte plasmabehandlung
US7670956B2 (en) * 2005-04-08 2010-03-02 Fei Company Beam-induced etching
US7691653B2 (en) * 2005-08-26 2010-04-06 Sharp Kabushiki Kaisha Nitride semiconductor laser element and method for manufacturing the same
US7288332B2 (en) * 2005-10-06 2007-10-30 Los Almos National Security, Llc Conductive layer for biaxially oriented semiconductor film growth
US20070259111A1 (en) * 2006-05-05 2007-11-08 Singh Kaushal K Method and apparatus for photo-excitation of chemicals for atomic layer deposition of dielectric film
EP2109873B1 (en) 2007-02-06 2017-04-05 FEI Company High pressure charged particle beam system
US8303833B2 (en) * 2007-06-21 2012-11-06 Fei Company High resolution plasma etch

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