JP2008177154A5 - - Google Patents
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- Publication number
- JP2008177154A5 JP2008177154A5 JP2007280016A JP2007280016A JP2008177154A5 JP 2008177154 A5 JP2008177154 A5 JP 2008177154A5 JP 2007280016 A JP2007280016 A JP 2007280016A JP 2007280016 A JP2007280016 A JP 2007280016A JP 2008177154 A5 JP2008177154 A5 JP 2008177154A5
- Authority
- JP
- Japan
- Prior art keywords
- workpiece
- charged
- focused beam
- clusters
- cluster
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/590,570 US8835880B2 (en) | 2006-10-31 | 2006-10-31 | Charged particle-beam processing using a cluster source |
| US11/590,570 | 2006-10-31 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2008177154A JP2008177154A (ja) | 2008-07-31 |
| JP2008177154A5 true JP2008177154A5 (https=) | 2010-12-16 |
| JP5498655B2 JP5498655B2 (ja) | 2014-05-21 |
Family
ID=39052434
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007280016A Expired - Fee Related JP5498655B2 (ja) | 2006-10-31 | 2007-10-29 | クラスタ源を使用する荷電粒子ビーム処理 |
Country Status (3)
| Country | Link |
|---|---|
| US (2) | US8835880B2 (https=) |
| EP (1) | EP1918963B1 (https=) |
| JP (1) | JP5498655B2 (https=) |
Families Citing this family (41)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8303833B2 (en) | 2007-06-21 | 2012-11-06 | Fei Company | High resolution plasma etch |
| US8372489B2 (en) * | 2007-09-28 | 2013-02-12 | Tel Epion Inc. | Method for directional deposition using a gas cluster ion beam |
| JP5873227B2 (ja) * | 2007-12-06 | 2016-03-01 | エフ・イ−・アイ・カンパニー | デコレーションを用いたスライス・アンド・ビュー |
| US20090233004A1 (en) * | 2008-03-17 | 2009-09-17 | Tel Epion Inc. | Method and system for depositing silicon carbide film using a gas cluster ion beam |
| US8202435B2 (en) * | 2008-08-01 | 2012-06-19 | Tel Epion Inc. | Method for selectively etching areas of a substrate using a gas cluster ion beam |
| JP5695818B2 (ja) * | 2009-01-27 | 2015-04-08 | 株式会社日立ハイテクサイエンス | 断面加工方法及び断面観察試料の製造方法 |
| US8877299B2 (en) | 2009-03-31 | 2014-11-04 | Tel Epion Inc. | Method for enhancing a substrate using gas cluster ion beam processing |
| US7982196B2 (en) | 2009-03-31 | 2011-07-19 | Tel Epion Inc. | Method for modifying a material layer using gas cluster ion beam processing |
| EP2261395A1 (en) * | 2009-06-12 | 2010-12-15 | Fei Company | Au-containing layer obtainable by charged particle beam processing |
| JP5692497B2 (ja) * | 2009-07-29 | 2015-04-01 | 福岡県 | 表面加工方法及び表面加工装置 |
| US8642974B2 (en) | 2009-12-30 | 2014-02-04 | Fei Company | Encapsulation of electrodes in solid media for use in conjunction with fluid high voltage isolation |
| US8987678B2 (en) | 2009-12-30 | 2015-03-24 | Fei Company | Encapsulation of electrodes in solid media |
| EP2341525B1 (en) | 2009-12-30 | 2013-10-23 | FEI Company | Plasma source for charged particle beam system |
| US8350237B2 (en) | 2010-03-31 | 2013-01-08 | Fei Company | Automated slice milling for viewing a feature |
| US8481340B2 (en) | 2010-06-16 | 2013-07-09 | Tel Epion Inc. | Method for preparing a light-emitting device using gas cluster ion beam processing |
| US8853078B2 (en) | 2011-01-30 | 2014-10-07 | Fei Company | Method of depositing material |
| US9090973B2 (en) | 2011-01-31 | 2015-07-28 | Fei Company | Beam-induced deposition of low-resistivity material |
| US8912490B2 (en) * | 2011-06-03 | 2014-12-16 | Fei Company | Method for preparing samples for imaging |
| EP2749863A3 (en) * | 2012-12-31 | 2016-05-04 | Fei Company | Method for preparing samples for imaging |
| US8859963B2 (en) * | 2011-06-03 | 2014-10-14 | Fei Company | Methods for preparing thin samples for TEM imaging |
| US20130098871A1 (en) | 2011-10-19 | 2013-04-25 | Fei Company | Internal Split Faraday Shield for an Inductively Coupled Plasma Source |
| US8822913B2 (en) * | 2011-12-06 | 2014-09-02 | Fei Company | Inductively-coupled plasma ion source for use with a focused ion beam column with selectable ions |
| CN104303257B (zh) | 2012-05-21 | 2018-03-30 | Fei 公司 | 用于tem观察的薄片的制备 |
| US9733164B2 (en) | 2012-06-11 | 2017-08-15 | Fei Company | Lamella creation method and device using fixed-angle beam and rotating sample stage |
| DE102013203995B4 (de) * | 2013-03-08 | 2020-03-12 | Carl Zeiss Smt Gmbh | Verfahren zum Schützen eines Substrats während einer Bearbeitung mit einem Teilchenstrahl |
| US9551079B2 (en) * | 2013-09-13 | 2017-01-24 | Purdue Research Foundation | Systems and methods for producing metal clusters; functionalized surfaces; and droplets including solvated metal ions |
| CN105917438B (zh) * | 2013-11-22 | 2018-04-24 | Tel 艾派恩有限公司 | 分子束增强gcib处理 |
| JP2015138667A (ja) * | 2014-01-22 | 2015-07-30 | アルバック・ファイ株式会社 | イオン源、イオン銃、分析装置 |
| CN107112186B (zh) * | 2014-09-05 | 2020-04-21 | Tel艾派恩有限公司 | 用于基片的射束处理的过程气体增强 |
| KR102257901B1 (ko) * | 2014-09-19 | 2021-05-31 | 삼성전자주식회사 | 반도체 검사 장비 및 이를 이용한 반도체 소자의 검사 방법 |
| DE102015204091B4 (de) * | 2015-03-06 | 2023-06-07 | Carl Zeiss Microscopy Gmbh | Verfahren und Vorrichtungen zur Ladungskompensation |
| US9437501B1 (en) | 2015-09-22 | 2016-09-06 | International Business Machines Corporation | Stacked nanowire device width adjustment by gas cluster ion beam (GCIB) |
| US10103008B2 (en) | 2016-01-12 | 2018-10-16 | Fei Company | Charged particle beam-induced etching |
| JP6703903B2 (ja) * | 2016-06-16 | 2020-06-03 | 株式会社日立製作所 | 微細構造体の加工方法および微細構造体の加工装置 |
| EP3285278A1 (en) * | 2016-08-16 | 2018-02-21 | FEI Company | Magnet used with a plasma cleaner |
| EP3607578B1 (en) * | 2017-04-04 | 2023-07-19 | TESCAN Brno, s.r.o. | A method of etching one or more of mixed metal and dielectric layer of a semiconductor device |
| CN107541713A (zh) * | 2017-07-14 | 2018-01-05 | 上海大学 | 载能离化原子团束辅助化学气相沉积制备dlc薄膜的方法及其系统 |
| JP7339818B2 (ja) | 2019-09-03 | 2023-09-06 | キオクシア株式会社 | 荷電粒子ビーム装置 |
| CN113403572A (zh) * | 2021-04-19 | 2021-09-17 | 江苏集创原子团簇科技研究院有限公司 | 一种带电粒子束处理工件的方法与设备 |
| CN114428180B (zh) * | 2022-01-17 | 2024-01-30 | 中国科学院物理研究所 | 一种二维纳米材料的stem样品的制备方法 |
| WO2024243117A2 (en) * | 2023-05-23 | 2024-11-28 | Georgia Tech Research Corporation | Electron shower induced deposition systems, methods of use thereof, and methods of making nanostructures |
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| FR2872910B1 (fr) * | 2004-07-07 | 2006-10-13 | Nanoraptor Sa | Composant optique pour l'observation d'un echantillon nanometrique, systeme comprenant un tel composant, procede d'analyse mettant en oeuvre ce composant, et leurs applications |
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| US7459702B2 (en) * | 2004-10-26 | 2008-12-02 | Jayant Neogi | Apparatus and method for polishing gemstones and the like |
-
2006
- 2006-10-31 US US11/590,570 patent/US8835880B2/en active Active
-
2007
- 2007-10-29 JP JP2007280016A patent/JP5498655B2/ja not_active Expired - Fee Related
- 2007-10-31 EP EP07119687.7A patent/EP1918963B1/en active Active
-
2014
- 2014-07-31 US US14/448,257 patent/US20150079796A1/en not_active Abandoned
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