JP5498655B2 - クラスタ源を使用する荷電粒子ビーム処理 - Google Patents

クラスタ源を使用する荷電粒子ビーム処理 Download PDF

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Publication number
JP5498655B2
JP5498655B2 JP2007280016A JP2007280016A JP5498655B2 JP 5498655 B2 JP5498655 B2 JP 5498655B2 JP 2007280016 A JP2007280016 A JP 2007280016A JP 2007280016 A JP2007280016 A JP 2007280016A JP 5498655 B2 JP5498655 B2 JP 5498655B2
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Prior art keywords
workpiece
charged
clusters
gas
cluster
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Expired - Fee Related
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JP2007280016A
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English (en)
Japanese (ja)
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JP2008177154A (ja
JP2008177154A5 (https=
Inventor
クライブ・チャンドラー
ノエル・スミス
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エフ・イ−・アイ・カンパニー
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching
    • H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching
    • H01J37/3056—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching for microworking, e. g. etching of gratings or trimming of electrical components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3178—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for applying thin layers on objects
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/006—Details of gas supplies, e.g. in an ion source, to a beam line, to a specimen or to a workpiece
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06—Sources
    • H01J2237/08—Ion sources
    • H01J2237/0812—Ionized cluster beam [ICB] sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06—Sources
    • H01J2237/08—Ion sources
    • H01J2237/0815—Methods of ionisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/31—Processing objects on a macro-scale
    • H01J2237/3142—Ion plating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/31732—Depositing thin layers on selected microareas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3174—Etching microareas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3174—Etching microareas
    • H01J2237/31742—Etching microareas for repairing masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3174—Etching microareas
    • H01J2237/31742—Etching microareas for repairing masks
    • H01J2237/31744—Etching microareas for repairing masks introducing gas in vicinity of workpiece

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  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Drying Of Semiconductors (AREA)
  • Physical Vapour Deposition (AREA)
JP2007280016A 2006-10-31 2007-10-29 クラスタ源を使用する荷電粒子ビーム処理 Expired - Fee Related JP5498655B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/590,570 US8835880B2 (en) 2006-10-31 2006-10-31 Charged particle-beam processing using a cluster source
US11/590,570 2006-10-31

Publications (3)

Publication Number Publication Date
JP2008177154A JP2008177154A (ja) 2008-07-31
JP2008177154A5 JP2008177154A5 (https=) 2010-12-16
JP5498655B2 true JP5498655B2 (ja) 2014-05-21

Family

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Family Applications (1)

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JP2007280016A Expired - Fee Related JP5498655B2 (ja) 2006-10-31 2007-10-29 クラスタ源を使用する荷電粒子ビーム処理

Country Status (3)

Country Link
US (2) US8835880B2 (https=)
EP (1) EP1918963B1 (https=)
JP (1) JP5498655B2 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11069513B2 (en) 2019-09-03 2021-07-20 Kioxia Corporation Charged particle beam apparatus

Families Citing this family (40)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8303833B2 (en) 2007-06-21 2012-11-06 Fei Company High resolution plasma etch
US8372489B2 (en) * 2007-09-28 2013-02-12 Tel Epion Inc. Method for directional deposition using a gas cluster ion beam
JP5873227B2 (ja) * 2007-12-06 2016-03-01 エフ・イ−・アイ・カンパニー デコレーションを用いたスライス・アンド・ビュー
US20090233004A1 (en) * 2008-03-17 2009-09-17 Tel Epion Inc. Method and system for depositing silicon carbide film using a gas cluster ion beam
US8202435B2 (en) * 2008-08-01 2012-06-19 Tel Epion Inc. Method for selectively etching areas of a substrate using a gas cluster ion beam
JP5695818B2 (ja) * 2009-01-27 2015-04-08 株式会社日立ハイテクサイエンス 断面加工方法及び断面観察試料の製造方法
US8877299B2 (en) 2009-03-31 2014-11-04 Tel Epion Inc. Method for enhancing a substrate using gas cluster ion beam processing
US7982196B2 (en) 2009-03-31 2011-07-19 Tel Epion Inc. Method for modifying a material layer using gas cluster ion beam processing
EP2261395A1 (en) * 2009-06-12 2010-12-15 Fei Company Au-containing layer obtainable by charged particle beam processing
JP5692497B2 (ja) * 2009-07-29 2015-04-01 福岡県 表面加工方法及び表面加工装置
US8642974B2 (en) 2009-12-30 2014-02-04 Fei Company Encapsulation of electrodes in solid media for use in conjunction with fluid high voltage isolation
US8987678B2 (en) 2009-12-30 2015-03-24 Fei Company Encapsulation of electrodes in solid media
EP2341525B1 (en) 2009-12-30 2013-10-23 FEI Company Plasma source for charged particle beam system
US8350237B2 (en) 2010-03-31 2013-01-08 Fei Company Automated slice milling for viewing a feature
US8481340B2 (en) 2010-06-16 2013-07-09 Tel Epion Inc. Method for preparing a light-emitting device using gas cluster ion beam processing
US8853078B2 (en) 2011-01-30 2014-10-07 Fei Company Method of depositing material
US9090973B2 (en) 2011-01-31 2015-07-28 Fei Company Beam-induced deposition of low-resistivity material
US8912490B2 (en) * 2011-06-03 2014-12-16 Fei Company Method for preparing samples for imaging
EP2749863A3 (en) * 2012-12-31 2016-05-04 Fei Company Method for preparing samples for imaging
US8859963B2 (en) * 2011-06-03 2014-10-14 Fei Company Methods for preparing thin samples for TEM imaging
US20130098871A1 (en) 2011-10-19 2013-04-25 Fei Company Internal Split Faraday Shield for an Inductively Coupled Plasma Source
US8822913B2 (en) * 2011-12-06 2014-09-02 Fei Company Inductively-coupled plasma ion source for use with a focused ion beam column with selectable ions
CN104303257B (zh) 2012-05-21 2018-03-30 Fei 公司 用于tem观察的薄片的制备
US9733164B2 (en) 2012-06-11 2017-08-15 Fei Company Lamella creation method and device using fixed-angle beam and rotating sample stage
DE102013203995B4 (de) * 2013-03-08 2020-03-12 Carl Zeiss Smt Gmbh Verfahren zum Schützen eines Substrats während einer Bearbeitung mit einem Teilchenstrahl
US9551079B2 (en) * 2013-09-13 2017-01-24 Purdue Research Foundation Systems and methods for producing metal clusters; functionalized surfaces; and droplets including solvated metal ions
CN105917438B (zh) * 2013-11-22 2018-04-24 Tel 艾派恩有限公司 分子束增强gcib处理
JP2015138667A (ja) * 2014-01-22 2015-07-30 アルバック・ファイ株式会社 イオン源、イオン銃、分析装置
CN107112186B (zh) * 2014-09-05 2020-04-21 Tel艾派恩有限公司 用于基片的射束处理的过程气体增强
KR102257901B1 (ko) * 2014-09-19 2021-05-31 삼성전자주식회사 반도체 검사 장비 및 이를 이용한 반도체 소자의 검사 방법
DE102015204091B4 (de) * 2015-03-06 2023-06-07 Carl Zeiss Microscopy Gmbh Verfahren und Vorrichtungen zur Ladungskompensation
US9437501B1 (en) 2015-09-22 2016-09-06 International Business Machines Corporation Stacked nanowire device width adjustment by gas cluster ion beam (GCIB)
US10103008B2 (en) 2016-01-12 2018-10-16 Fei Company Charged particle beam-induced etching
JP6703903B2 (ja) * 2016-06-16 2020-06-03 株式会社日立製作所 微細構造体の加工方法および微細構造体の加工装置
EP3285278A1 (en) * 2016-08-16 2018-02-21 FEI Company Magnet used with a plasma cleaner
EP3607578B1 (en) * 2017-04-04 2023-07-19 TESCAN Brno, s.r.o. A method of etching one or more of mixed metal and dielectric layer of a semiconductor device
CN107541713A (zh) * 2017-07-14 2018-01-05 上海大学 载能离化原子团束辅助化学气相沉积制备dlc薄膜的方法及其系统
CN113403572A (zh) * 2021-04-19 2021-09-17 江苏集创原子团簇科技研究院有限公司 一种带电粒子束处理工件的方法与设备
CN114428180B (zh) * 2022-01-17 2024-01-30 中国科学院物理研究所 一种二维纳米材料的stem样品的制备方法
WO2024243117A2 (en) * 2023-05-23 2024-11-28 Georgia Tech Research Corporation Electron shower induced deposition systems, methods of use thereof, and methods of making nanostructures

Family Cites Families (74)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US773396A (en) * 1904-02-25 1904-10-25 William F Kintzing Shuttle-motion for looms.
US830978A (en) * 1906-04-24 1906-09-11 Louis G Dunn Wire-tightener.
EP0015692B1 (en) * 1979-02-23 1983-07-27 Sekisui Kagaku Kogyo Kabushiki Kaisha A process for producing a magnetic recording medium
KR890002747B1 (ko) * 1983-11-07 1989-07-26 가부시기가이샤 히다찌세이사꾸쇼 이온 빔에 의한 성막방법 및 그 장치
JPS6339124A (ja) * 1986-08-01 1988-02-19 Hitachi Maxell Ltd 磁気記録媒体及びその製造方法
US4737637A (en) * 1986-10-15 1988-04-12 Hughes Aircraft Company Mass separator for ionized cluster beam
CN1019513B (zh) * 1986-10-29 1992-12-16 三菱电机株式会社 化合物薄膜形成装置
US4856457A (en) * 1987-02-20 1989-08-15 Hughes Aircraft Company Cluster source for nonvolatile species, having independent temperature control
US4740267A (en) 1987-02-20 1988-04-26 Hughes Aircraft Company Energy intensive surface reactions using a cluster beam
US4833319A (en) * 1987-02-27 1989-05-23 Hughes Aircraft Company Carrier gas cluster source for thermally conditioned clusters
US4800100A (en) * 1987-10-27 1989-01-24 Massachusetts Institute Of Technology Combined ion and molecular beam apparatus and method for depositing materials
JP2650930B2 (ja) * 1987-11-24 1997-09-10 株式会社日立製作所 超格子構作の素子製作方法
JPH0242957A (ja) 1988-07-30 1990-02-13 Osaki Suisan:Kk 魚肉切身様食品及びその製造法
US4886969A (en) * 1988-12-16 1989-12-12 Hughes Aircraft Company Cluster beam apparatus utilizing cold cathode cluster ionizer
US5064520A (en) * 1989-02-15 1991-11-12 Hitachi, Ltd. Method and apparatus for forming a film
US5083033A (en) * 1989-03-31 1992-01-21 Kabushiki Kaisha Toshiba Method of depositing an insulating film and a focusing ion beam apparatus
JPH02278203A (ja) * 1989-04-19 1990-11-14 Adachi Shin Sangyo Kk 光学反射板
US4935623A (en) * 1989-06-08 1990-06-19 Hughes Aircraft Company Production of energetic atom beams
US5019712A (en) * 1989-06-08 1991-05-28 Hughes Aircraft Company Production of focused ion cluster beams
JPH0317930A (ja) * 1989-06-13 1991-01-25 Mitsubishi Electric Corp カラーブラウン管の製造方法
JP2639158B2 (ja) 1989-08-02 1997-08-06 日本電気株式会社 エッチング方法およびエッチング装置
EP0538361A4 (en) * 1990-07-06 1993-05-19 Iit Research Institute Method and apparatus for rendering medical materials safe
US5683547A (en) * 1990-11-21 1997-11-04 Hitachi, Ltd. Processing method and apparatus using focused energy beam
US5382315A (en) * 1991-02-11 1995-01-17 Microelectronics And Computer Technology Corporation Method of forming etch mask using particle beam deposition
JP2915170B2 (ja) * 1991-06-05 1999-07-05 三菱電機株式会社 薄膜形成装置及び薄膜形成方法
US5196102A (en) * 1991-08-08 1993-03-23 Microelectronics And Computer Technology Corporation Method and apparatus for applying a compound of a metal and a gas onto a surface
JP2774884B2 (ja) * 1991-08-22 1998-07-09 株式会社日立製作所 試料の分離方法及びこの分離方法で得た分離試料の分析方法
US5286331A (en) * 1991-11-01 1994-02-15 International Business Machines Corporation Supersonic molecular beam etching of surfaces
KR0126457B1 (ko) * 1992-01-08 1997-12-26 기타오카 다카시 집적회로, 그 제조방법 및 그 박막형성장치
JPH06184738A (ja) 1992-08-26 1994-07-05 Mitsubishi Electric Corp 炭素薄膜の形成方法とその改質方法およびその改質方法を用いた電子デバイスおよびｘ線多層膜ミラーとその製造方法
DE69315177D1 (de) * 1992-09-14 1997-12-18 Toshiba Kawasaki Kk Elektronisches Bauelement mit künstlichem Übergitter
JP2766153B2 (ja) * 1993-02-26 1998-06-18 昭 林 反応性イオンクラスタービーム蒸着法及びその装置
US5435850A (en) * 1993-09-17 1995-07-25 Fei Company Gas injection system
JPH0794466A (ja) 1993-09-20 1995-04-07 Toshiba Corp 表面処理装置
US5582879A (en) * 1993-11-08 1996-12-10 Canon Kabushiki Kaisha Cluster beam deposition method for manufacturing thin film
US5814194A (en) * 1994-10-20 1998-09-29 Matsushita Electric Industrial Co., Ltd Substrate surface treatment method
US5796111A (en) * 1995-10-30 1998-08-18 Phrasor Scientific, Inc. Apparatus for cleaning contaminated surfaces using energetic cluster beams
JP2884054B2 (ja) * 1995-11-29 1999-04-19 工業技術院長 微細加工方法
WO1997038355A1 (en) 1996-04-08 1997-10-16 Micrion Corporation Systems and methods for deposition of dielectric films
US5851413A (en) * 1996-06-19 1998-12-22 Micrion Corporation Gas delivery systems for particle beam processing
US6042738A (en) * 1997-04-16 2000-03-28 Micrion Corporation Pattern film repair using a focused particle beam system
WO2000026431A1 (en) 1998-11-03 2000-05-11 Epion Corporation Gas cluster ion beams for formation of nitride films
JP4185604B2 (ja) 1998-11-18 2008-11-26 株式会社日立製作所 試料解析方法、試料作成方法およびそのための装置
JP2000266651A (ja) 1999-03-18 2000-09-29 Asahi Chem Ind Co Ltd 分析試料作製方法
DE19934173A1 (de) * 1999-07-21 2001-01-25 Max Planck Gesellschaft Verfahren und Vorrichtung zur Clusterfragmentation
US6635883B2 (en) 1999-12-06 2003-10-21 Epion Corporation Gas cluster ion beam low mass ion filter
US6331227B1 (en) * 1999-12-14 2001-12-18 Epion Corporation Enhanced etching/smoothing of dielectric surfaces
US7008862B2 (en) * 2000-01-25 2006-03-07 Ever 1391 Limited Regular array of microscopic structures on a substrate and devices incorporating same
US6498107B1 (en) * 2000-05-01 2002-12-24 Epion Corporation Interface control for film deposition by gas-cluster ion-beam processing
JP2003532349A (ja) * 2000-05-02 2003-10-28 エピオン コーポレイション Ｇｃｉｂ処理によるデバイス特性の調整システム及び方法
US6921722B2 (en) * 2000-05-30 2005-07-26 Ebara Corporation Coating, modification and etching of substrate surface with particle beam irradiation of the same
US6743481B2 (en) * 2000-06-01 2004-06-01 Seagate Technology Llc Process for production of ultrathin protective overcoats
DE10196294T5 (de) * 2000-06-02 2004-07-08 Seagate Technology Llc, Scotts Valley Verfahren zur Herstellung von ultradünnen Schutzbeschichtungen
EP1303866B1 (en) * 2000-07-10 2009-12-09 TEL Epion Inc. System and method for improving thin films by gas cluster ion be am processing
AU2001273274A1 (en) * 2000-07-10 2002-01-21 Epion Corporation Improving effectiveness of artificial hip by gcib
JP3597761B2 (ja) 2000-07-18 2004-12-08 株式会社日立製作所 イオンビーム装置及び試料加工方法
US6838380B2 (en) * 2001-01-26 2005-01-04 Fei Company Fabrication of high resistivity structures using focused ion beams
US6753538B2 (en) * 2001-07-27 2004-06-22 Fei Company Electron beam processing
US20030042431A1 (en) * 2001-08-28 2003-03-06 Clevenger Lawrence A. Fuse and anti-fuse concept using a focused ion beam writing technique
GB2386747A (en) 2001-11-08 2003-09-24 Ionoptika Ltd Fullerene ion gun
US7138100B2 (en) * 2001-11-21 2006-11-21 William Marsh Rice Univesity Process for making single-wall carbon nanotubes utilizing refractory particles
US8093144B2 (en) * 2002-05-24 2012-01-10 Massachusetts Institute Of Technology Patterning of nanostructures
US6800565B2 (en) * 2003-01-13 2004-10-05 Veeco Instruments, Inc. Method of forming thin oxidation layer by cluster ion beam
US6926935B2 (en) * 2003-06-27 2005-08-09 Fei Company Proximity deposition
TWM240957U (en) * 2003-07-17 2004-08-21 Peikang Food Co Ltd Improved structure of pillow
US7344753B2 (en) * 2003-09-19 2008-03-18 The Board Of Trustees Of The University Of Illinois Nanostructures including a metal
JP4497889B2 (ja) * 2003-10-29 2010-07-07 アルバック・ファイ株式会社 電子分光分析方法及び分析装置
US7820981B2 (en) 2003-12-12 2010-10-26 Semequip, Inc. Method and apparatus for extending equipment uptime in ion implantation
US7423275B2 (en) * 2004-01-15 2008-09-09 Intel Corporation Erosion mitigation for collector optics using electric and magnetic fields
JP2007525838A (ja) * 2004-02-14 2007-09-06 エピオン コーポレーション ドープ済みおよび未ドープの歪み半導体の形成方法およびガスクラスタイオン照射による半導体薄膜の形成方法
US7241361B2 (en) * 2004-02-20 2007-07-10 Fei Company Magnetically enhanced, inductively coupled plasma source for a focused ion beam system
FR2872910B1 (fr) * 2004-07-07 2006-10-13 Nanoraptor Sa Composant optique pour l'observation d'un echantillon nanometrique, systeme comprenant un tel composant, procede d'analyse mettant en oeuvre ce composant, et leurs applications
ATE532203T1 (de) * 2004-08-27 2011-11-15 Fei Co Lokalisierte plasmabehandlung
US7459702B2 (en) * 2004-10-26 2008-12-02 Jayant Neogi Apparatus and method for polishing gemstones and the like

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11069513B2 (en) 2019-09-03 2021-07-20 Kioxia Corporation Charged particle beam apparatus

Also Published As

Publication number Publication date
JP2008177154A (ja) 2008-07-31
US8835880B2 (en) 2014-09-16
EP1918963A2 (en) 2008-05-07
EP1918963B1 (en) 2014-04-23
EP1918963A3 (en) 2009-10-21
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