JP2015029072A5 - - Google Patents
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- Publication number
- JP2015029072A5 JP2015029072A5 JP2014118874A JP2014118874A JP2015029072A5 JP 2015029072 A5 JP2015029072 A5 JP 2015029072A5 JP 2014118874 A JP2014118874 A JP 2014118874A JP 2014118874 A JP2014118874 A JP 2014118874A JP 2015029072 A5 JP2015029072 A5 JP 2015029072A5
- Authority
- JP
- Japan
- Prior art keywords
- precursor gas
- cooled
- charged particle
- particle beam
- exposing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000007789 gas Substances 0.000 claims 34
- 239000002243 precursor Substances 0.000 claims 29
- 238000000034 method Methods 0.000 claims 27
- 239000002245 particle Substances 0.000 claims 20
- 239000000758 substrate Substances 0.000 claims 13
- 238000001816 cooling Methods 0.000 claims 12
- 238000009835 boiling Methods 0.000 claims 11
- 239000000203 mixture Substances 0.000 claims 5
- 229910052710 silicon Inorganic materials 0.000 claims 5
- 239000010703 silicon Substances 0.000 claims 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims 4
- 229910052799 carbon Inorganic materials 0.000 claims 4
- 238000005530 etching Methods 0.000 claims 4
- 230000001678 irradiating effect Effects 0.000 claims 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims 3
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 claims 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 3
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims 3
- 229910052787 antimony Inorganic materials 0.000 claims 3
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims 3
- 229910052785 arsenic Inorganic materials 0.000 claims 3
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims 3
- 229910052796 boron Inorganic materials 0.000 claims 3
- 150000001875 compounds Chemical class 0.000 claims 3
- 229910052732 germanium Inorganic materials 0.000 claims 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims 3
- 239000000463 material Substances 0.000 claims 3
- 229910052698 phosphorus Inorganic materials 0.000 claims 3
- 239000011574 phosphorus Substances 0.000 claims 3
- 238000007789 sealing Methods 0.000 claims 3
- 229910052711 selenium Inorganic materials 0.000 claims 3
- 239000011669 selenium Substances 0.000 claims 3
- 229910052717 sulfur Inorganic materials 0.000 claims 3
- 239000011593 sulfur Substances 0.000 claims 3
- 229910052718 tin Inorganic materials 0.000 claims 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims 2
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 claims 2
- 238000010894 electron beam technology Methods 0.000 claims 2
- 239000012634 fragment Substances 0.000 claims 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims 1
- 229910021529 ammonia Inorganic materials 0.000 claims 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 1
- 239000007795 chemical reaction product Substances 0.000 claims 1
- 229910052801 chlorine Inorganic materials 0.000 claims 1
- 239000000460 chlorine Substances 0.000 claims 1
- 238000001514 detection method Methods 0.000 claims 1
- 230000007613 environmental effect Effects 0.000 claims 1
- 229910052739 hydrogen Inorganic materials 0.000 claims 1
- 239000001257 hydrogen Substances 0.000 claims 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims 1
- 229910000041 hydrogen chloride Inorganic materials 0.000 claims 1
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 claims 1
- 229960001730 nitrous oxide Drugs 0.000 claims 1
- 235000013842 nitrous oxide Nutrition 0.000 claims 1
- 229910052760 oxygen Inorganic materials 0.000 claims 1
- 239000001301 oxygen Substances 0.000 claims 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US13/914,312 | 2013-06-10 | ||
| US13/914,312 US9123506B2 (en) | 2013-06-10 | 2013-06-10 | Electron beam-induced etching |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2015029072A JP2015029072A (ja) | 2015-02-12 |
| JP2015029072A5 true JP2015029072A5 (https=) | 2017-06-29 |
Family
ID=50846876
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2014118874A Pending JP2015029072A (ja) | 2013-06-10 | 2014-06-09 | 電子ビーム誘起エッチング |
Country Status (4)
| Country | Link |
|---|---|
| US (2) | US9123506B2 (https=) |
| EP (1) | EP2814050A3 (https=) |
| JP (1) | JP2015029072A (https=) |
| CN (1) | CN104241067B (https=) |
Families Citing this family (17)
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| KR102257901B1 (ko) * | 2014-09-19 | 2021-05-31 | 삼성전자주식회사 | 반도체 검사 장비 및 이를 이용한 반도체 소자의 검사 방법 |
| US9799490B2 (en) | 2015-03-31 | 2017-10-24 | Fei Company | Charged particle beam processing using process gas and cooled surface |
| US10538844B2 (en) | 2015-09-11 | 2020-01-21 | Fei Company | Nanofabrication using a new class of electron beam induced surface processing techniques |
| EP3176808B1 (en) * | 2015-12-03 | 2019-10-16 | Carl Zeiss Microscopy Ltd. | Method for detecting charged particles and particle beam device for carrying out the method |
| US10103008B2 (en) * | 2016-01-12 | 2018-10-16 | Fei Company | Charged particle beam-induced etching |
| US10501851B2 (en) | 2016-05-12 | 2019-12-10 | Fei Company | Attachment of nano-objects to beam-deposited structures |
| US10619243B2 (en) * | 2016-07-22 | 2020-04-14 | Triratna P. Muneshwar | Method to improve precursor utilization in pulsed atomic layer processes |
| US10347463B2 (en) * | 2016-12-09 | 2019-07-09 | Fei Company | Enhanced charged particle beam processes for carbon removal |
| US10395923B2 (en) | 2017-10-11 | 2019-08-27 | Lawrence Livermore National Security, Llc | Localized electron beam induced deposition of silicon carbide |
| US10176983B1 (en) | 2017-10-11 | 2019-01-08 | Lawrence Livermore National Security, Llc | Charged particle induced deposition of boron containing material |
| WO2019143474A1 (en) | 2018-01-18 | 2019-07-25 | Applied Materials, Inc. | Etching apparatus and methods |
| US10790153B2 (en) | 2018-06-29 | 2020-09-29 | Applied Materials, Inc. | Methods and apparatus for electron beam etching process |
| US10652441B1 (en) * | 2019-05-10 | 2020-05-12 | The Boeing Company | Systems and methods for protecting imaging devices against high-radiant-flux light |
| US11069509B1 (en) * | 2020-03-16 | 2021-07-20 | Fei Company | Method and system for backside planar view lamella preparation |
| WO2022174187A2 (en) * | 2021-02-15 | 2022-08-18 | E.A. Fischione Instruments, Inc. | System and method for uniform ion milling |
| CN115274016A (zh) * | 2022-08-03 | 2022-11-01 | 西安交通大学 | 一种用于束窗加工的方法 |
| KR102803824B1 (ko) * | 2023-01-31 | 2025-05-08 | (주)라드피온 | 이온주입을 이용한 소재표면 개질장치 |
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| DE3611337A1 (de) | 1986-04-04 | 1987-10-22 | Deutsche Forsch Luft Raumfahrt | In einer kunststoffkugel untergebrachte, opto-elektronische anordnung |
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| JPH03241741A (ja) * | 1990-02-20 | 1991-10-28 | Hitachi Ltd | エネルギービーム局所処理方法およびその装置 |
| JPH0437129A (ja) * | 1990-06-01 | 1992-02-07 | Fujitsu Ltd | エッチング方法及びエッチング装置 |
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| US6268608B1 (en) | 1998-10-09 | 2001-07-31 | Fei Company | Method and apparatus for selective in-situ etching of inter dielectric layers |
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| KR101015116B1 (ko) | 2002-09-18 | 2011-02-16 | 에프이아이 컴파니 | 하전(荷電) 입자 빔 시스템 |
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| EP1586007B1 (en) | 2003-01-16 | 2012-04-11 | Fei Company | Electron beam processing for mask repair |
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| EP2217043B1 (en) * | 2007-11-06 | 2019-01-30 | Mitsubishi Materials Corporation | Method for producing a substrate for power module |
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| US9679741B2 (en) * | 2010-11-09 | 2017-06-13 | Fei Company | Environmental cell for charged particle beam system |
| US9721754B2 (en) * | 2011-04-26 | 2017-08-01 | Carl Zeiss Smt Gmbh | Method and apparatus for processing a substrate with a focused particle beam |
| US8512586B2 (en) | 2011-09-01 | 2013-08-20 | Tel Epion Inc. | Gas cluster ion beam etching process for achieving target etch process metrics for multiple materials |
| US9443697B2 (en) | 2012-01-31 | 2016-09-13 | Fei Company | Low energy ion beam etch |
| DE102013203995B4 (de) * | 2013-03-08 | 2020-03-12 | Carl Zeiss Smt Gmbh | Verfahren zum Schützen eines Substrats während einer Bearbeitung mit einem Teilchenstrahl |
| US9064811B2 (en) | 2013-05-28 | 2015-06-23 | Fei Company | Precursor for planar deprocessing of semiconductor devices using a focused ion beam |
-
2013
- 2013-06-10 US US13/914,312 patent/US9123506B2/en active Active
-
2014
- 2014-06-05 EP EP20140171293 patent/EP2814050A3/en not_active Withdrawn
- 2014-06-09 CN CN201410376713.8A patent/CN104241067B/zh active Active
- 2014-06-09 JP JP2014118874A patent/JP2015029072A/ja active Pending
-
2015
- 2015-07-17 US US14/802,648 patent/US10304658B2/en active Active
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