JP2015029072A - 電子ビーム誘起エッチング - Google Patents

電子ビーム誘起エッチング Download PDF

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Publication number
JP2015029072A
JP2015029072A JP2014118874A JP2014118874A JP2015029072A JP 2015029072 A JP2015029072 A JP 2015029072A JP 2014118874 A JP2014118874 A JP 2014118874A JP 2014118874 A JP2014118874 A JP 2014118874A JP 2015029072 A JP2015029072 A JP 2015029072A
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JP
Japan
Prior art keywords
substrate surface
precursor gas
gas
workpiece
substrate
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Pending
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JP2014118874A
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English (en)
Japanese (ja)
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JP2015029072A5 (https=
Inventor
エイデン・マーティン
Martin Aiden
ミロス・トス
Milos Toth
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FEI Co
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FEI Co
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Publication of JP2015029072A publication Critical patent/JP2015029072A/ja
Publication of JP2015029072A5 publication Critical patent/JP2015029072A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching
    • H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/3002—Details
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F4/00—Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00
    • C23F4/02—Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00 by evaporation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/70—Chemical treatments
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/02—Details
    • H01J2237/0203—Protection arrangements
    • H01J2237/0206—Extinguishing, preventing or controlling unwanted discharges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/2001—Maintaining constant desired temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/244—Detection characterized by the detecting means
    • H01J2237/2444—Electron Multiplier
    • H01J2237/24445—Electron Multiplier using avalanche in a gas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/26—Electron or ion microscopes
    • H01J2237/2602—Details
    • H01J2237/2605—Details operating at elevated pressures, e.g. atmosphere
    • H01J2237/2608—Details operating at elevated pressures, e.g. atmosphere with environmental specimen chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/31732—Depositing thin layers on selected microareas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/31749—Focused ion beam

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
JP2014118874A 2013-06-10 2014-06-09 電子ビーム誘起エッチング Pending JP2015029072A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/914,312 2013-06-10
US13/914,312 US9123506B2 (en) 2013-06-10 2013-06-10 Electron beam-induced etching

Publications (2)

Publication Number Publication Date
JP2015029072A true JP2015029072A (ja) 2015-02-12
JP2015029072A5 JP2015029072A5 (https=) 2017-06-29

Family

ID=50846876

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2014118874A Pending JP2015029072A (ja) 2013-06-10 2014-06-09 電子ビーム誘起エッチング

Country Status (4)

Country Link
US (2) US9123506B2 (https=)
EP (1) EP2814050A3 (https=)
JP (1) JP2015029072A (https=)
CN (1) CN104241067B (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017135375A (ja) * 2016-01-12 2017-08-03 エフ・イ−・アイ・カンパニー 荷電粒子ビーム誘起エッチング
JP2018098194A (ja) * 2016-12-09 2018-06-21 エフ・イ−・アイ・カンパニー 炭素除去のための荷電粒子ビーム・プロセスの強化

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102257901B1 (ko) * 2014-09-19 2021-05-31 삼성전자주식회사 반도체 검사 장비 및 이를 이용한 반도체 소자의 검사 방법
US9799490B2 (en) 2015-03-31 2017-10-24 Fei Company Charged particle beam processing using process gas and cooled surface
US10538844B2 (en) 2015-09-11 2020-01-21 Fei Company Nanofabrication using a new class of electron beam induced surface processing techniques
EP3176808B1 (en) * 2015-12-03 2019-10-16 Carl Zeiss Microscopy Ltd. Method for detecting charged particles and particle beam device for carrying out the method
US10501851B2 (en) 2016-05-12 2019-12-10 Fei Company Attachment of nano-objects to beam-deposited structures
US10619243B2 (en) * 2016-07-22 2020-04-14 Triratna P. Muneshwar Method to improve precursor utilization in pulsed atomic layer processes
US10395923B2 (en) 2017-10-11 2019-08-27 Lawrence Livermore National Security, Llc Localized electron beam induced deposition of silicon carbide
US10176983B1 (en) 2017-10-11 2019-01-08 Lawrence Livermore National Security, Llc Charged particle induced deposition of boron containing material
WO2019143474A1 (en) 2018-01-18 2019-07-25 Applied Materials, Inc. Etching apparatus and methods
US10790153B2 (en) 2018-06-29 2020-09-29 Applied Materials, Inc. Methods and apparatus for electron beam etching process
US10652441B1 (en) * 2019-05-10 2020-05-12 The Boeing Company Systems and methods for protecting imaging devices against high-radiant-flux light
US11069509B1 (en) * 2020-03-16 2021-07-20 Fei Company Method and system for backside planar view lamella preparation
WO2022174187A2 (en) * 2021-02-15 2022-08-18 E.A. Fischione Instruments, Inc. System and method for uniform ion milling
CN115274016A (zh) * 2022-08-03 2022-11-01 西安交通大学 一种用于束窗加工的方法
KR102803824B1 (ko) * 2023-01-31 2025-05-08 (주)라드피온 이온주입을 이용한 소재표면 개질장치

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6276521A (ja) * 1985-09-27 1987-04-08 Nec Corp 電子ビ−ムエツチング方法
JPH02256235A (ja) * 1988-12-27 1990-10-17 Toshiba Corp 表面処理方法
JPH03241741A (ja) * 1990-02-20 1991-10-28 Hitachi Ltd エネルギービーム局所処理方法およびその装置
JPH0437129A (ja) * 1990-06-01 1992-02-07 Fujitsu Ltd エッチング方法及びエッチング装置
JPH04162521A (ja) * 1990-10-25 1992-06-08 Nec Corp ドライエッチング方法および装置
JPH0478268U (https=) * 1990-11-14 1992-07-08
JP2010518583A (ja) * 2007-02-06 2010-05-27 エフ・イ−・アイ・カンパニー 高圧荷電粒子ビーム・システム
JP2011040747A (ja) * 2009-08-10 2011-02-24 Fei Co ガス支援レーザ・アブレーション
JP2013055336A (ja) * 2011-09-01 2013-03-21 Tel Epion Inc 複合材料の目標エッチングプロセス特性を達成するためのガスクラスタイオンビームエッチングプロセス

Family Cites Families (41)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4162401A (en) * 1978-05-17 1979-07-24 The United States Of America As Represented By The United States Department Of Energy High-resolution, cryogenic, side-entry type specimen stage
US4386505A (en) * 1981-05-01 1983-06-07 The Board Of Trustees Of The Leland Stanford Junior University Refrigerators
DE3611337A1 (de) 1986-04-04 1987-10-22 Deutsche Forsch Luft Raumfahrt In einer kunststoffkugel untergebrachte, opto-elektronische anordnung
US4785182A (en) 1987-05-21 1988-11-15 Electroscan Corporation Secondary electron detector for use in a gaseous atmosphere
EP0376252B1 (en) * 1988-12-27 1997-10-22 Kabushiki Kaisha Toshiba Method of removing an oxide film on a substrate
US5435850A (en) 1993-09-17 1995-07-25 Fei Company Gas injection system
JP3466744B2 (ja) * 1993-12-29 2003-11-17 株式会社東芝 洗浄機能付き荷電ビーム装置および荷電ビーム装置の洗浄方法
US5851413A (en) 1996-06-19 1998-12-22 Micrion Corporation Gas delivery systems for particle beam processing
GB9623768D0 (en) * 1996-11-15 1997-01-08 Leo Electron Microscopy Limite Scanning electron microscope
US6268608B1 (en) 1998-10-09 2001-07-31 Fei Company Method and apparatus for selective in-situ etching of inter dielectric layers
JP3872245B2 (ja) * 2000-01-14 2007-01-24 エスアイアイ・ナノテクノロジー株式会社 試料の断面構造観察方法
US6786978B2 (en) * 2000-08-03 2004-09-07 Texas Instruments Incorporated Mass production of cross-section TEM samples by focused ion beam deposition and anisotropic etching
US6753538B2 (en) 2001-07-27 2004-06-22 Fei Company Electron beam processing
AU2003220088A1 (en) * 2002-03-08 2003-09-22 Sundew Technologies, Llc Ald method and apparatus
KR101015116B1 (ko) 2002-09-18 2011-02-16 에프이아이 컴파니 하전(荷電) 입자 빔 시스템
ATE497250T1 (de) * 2002-10-16 2011-02-15 Zeiss Carl Sms Gmbh Verfahren für durch einen fokussierten elektronenstrahl induziertes ätzen
EP1586007B1 (en) 2003-01-16 2012-04-11 Fei Company Electron beam processing for mask repair
US6881955B2 (en) * 2003-06-26 2005-04-19 International Business Machines Corporation Metrology process for enhancing image contrast
US20050260354A1 (en) * 2004-05-20 2005-11-24 Varian Semiconductor Equipment Associates, Inc. In-situ process chamber preparation methods for plasma ion implantation systems
US7420164B2 (en) * 2004-05-26 2008-09-02 Ebara Corporation Objective lens, electron beam system and method of inspecting defect
US7674389B2 (en) 2004-10-26 2010-03-09 The Regents Of The University Of California Precision shape modification of nanodevices with a low-energy electron beam
US7670956B2 (en) 2005-04-08 2010-03-02 Fei Company Beam-induced etching
JP2007103108A (ja) * 2005-10-03 2007-04-19 Sii Nanotechnology Inc 集束イオンビームによる加工方法
JP4734135B2 (ja) * 2005-10-19 2011-07-27 株式会社日立ハイテクノロジーズ 荷電粒子線装置、それに用いられるコンピュータプログラム、及び試料像観察方法
JP2009008657A (ja) * 2007-05-25 2009-01-15 Canon Inc 固体試料、固体試料作製方法及び固体試料作製装置
US20090084757A1 (en) * 2007-09-28 2009-04-02 Yuri Erokhin Uniformity control for ion beam assisted etching
EP2217043B1 (en) * 2007-11-06 2019-01-30 Mitsubishi Materials Corporation Method for producing a substrate for power module
EP2229241B1 (en) * 2007-12-04 2019-06-05 Oerlikon Metco (US) Inc. Multi-layer anti-corrosive coating
DE102008037943B4 (de) * 2008-08-14 2018-04-26 Nawotec Gmbh Verfahren und Vorrichtung zum elektronenstrahlinduzierten Ätzen und Halbleiterbauelement mit einer Struktur geätzt mittels eines derartigen Verfahrens
DE102008037951B4 (de) * 2008-08-14 2018-02-15 Nawotec Gmbh Verfahren und Vorrichtung zum elektronenstrahlinduzierten Ätzen von mit Gallium verunreinigten Schichten
US8299432B2 (en) * 2008-11-04 2012-10-30 Fei Company Scanning transmission electron microscope using gas amplification
US8778804B2 (en) 2009-01-30 2014-07-15 Fei Company High selectivity, low damage electron-beam delineation etch
JP5352262B2 (ja) * 2009-02-06 2013-11-27 株式会社日立ハイテクノロジーズ 荷電粒子線装置
EP2226830B1 (en) * 2009-03-06 2014-01-08 FEI Company Charged particle beam processing
US8617668B2 (en) * 2009-09-23 2013-12-31 Fei Company Method of using nitrogen based compounds to reduce contamination in beam-induced thin film deposition
EP2402475A1 (en) 2010-06-30 2012-01-04 Fei Company Beam-induced deposition at cryogenic temperatures
US9679741B2 (en) * 2010-11-09 2017-06-13 Fei Company Environmental cell for charged particle beam system
US9721754B2 (en) * 2011-04-26 2017-08-01 Carl Zeiss Smt Gmbh Method and apparatus for processing a substrate with a focused particle beam
US9443697B2 (en) 2012-01-31 2016-09-13 Fei Company Low energy ion beam etch
DE102013203995B4 (de) * 2013-03-08 2020-03-12 Carl Zeiss Smt Gmbh Verfahren zum Schützen eines Substrats während einer Bearbeitung mit einem Teilchenstrahl
US9064811B2 (en) 2013-05-28 2015-06-23 Fei Company Precursor for planar deprocessing of semiconductor devices using a focused ion beam

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6276521A (ja) * 1985-09-27 1987-04-08 Nec Corp 電子ビ−ムエツチング方法
JPH02256235A (ja) * 1988-12-27 1990-10-17 Toshiba Corp 表面処理方法
JPH03241741A (ja) * 1990-02-20 1991-10-28 Hitachi Ltd エネルギービーム局所処理方法およびその装置
JPH0437129A (ja) * 1990-06-01 1992-02-07 Fujitsu Ltd エッチング方法及びエッチング装置
JPH04162521A (ja) * 1990-10-25 1992-06-08 Nec Corp ドライエッチング方法および装置
JPH0478268U (https=) * 1990-11-14 1992-07-08
JP2010518583A (ja) * 2007-02-06 2010-05-27 エフ・イ−・アイ・カンパニー 高圧荷電粒子ビーム・システム
JP2011040747A (ja) * 2009-08-10 2011-02-24 Fei Co ガス支援レーザ・アブレーション
JP2013055336A (ja) * 2011-09-01 2013-03-21 Tel Epion Inc 複合材料の目標エッチングプロセス特性を達成するためのガスクラスタイオンビームエッチングプロセス

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017135375A (ja) * 2016-01-12 2017-08-03 エフ・イ−・アイ・カンパニー 荷電粒子ビーム誘起エッチング
JP2021036606A (ja) * 2016-01-12 2021-03-04 エフ イー アイ カンパニＦｅｉ Ｃｏｍｐａｎｙ 荷電粒子ビーム誘起エッチング
JP7048703B2 (ja) 2016-01-12 2022-04-05 エフ イー アイ カンパニ 荷電粒子ビーム誘起エッチング
JP2018098194A (ja) * 2016-12-09 2018-06-21 エフ・イ−・アイ・カンパニー 炭素除去のための荷電粒子ビーム・プロセスの強化

Also Published As

Publication number Publication date
EP2814050A2 (en) 2014-12-17
EP2814050A3 (en) 2015-02-25
CN104241067A (zh) 2014-12-24
US20140363978A1 (en) 2014-12-11
CN104241067B (zh) 2019-02-19
US10304658B2 (en) 2019-05-28
US20160020068A1 (en) 2016-01-21
US9123506B2 (en) 2015-09-01

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