JP2013055336A - 複合材料の目標エッチングプロセス特性を達成するためのガスクラスタイオンビームエッチングプロセス - Google Patents
複合材料の目標エッチングプロセス特性を達成するためのガスクラスタイオンビームエッチングプロセス Download PDFInfo
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- JP2013055336A JP2013055336A JP2012180127A JP2012180127A JP2013055336A JP 2013055336 A JP2013055336 A JP 2013055336A JP 2012180127 A JP2012180127 A JP 2012180127A JP 2012180127 A JP2012180127 A JP 2012180127A JP 2013055336 A JP2013055336 A JP 2013055336A
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
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Abstract
【解決手段】第1の材料、第2の材料及び前記第1の材料及び/又は第2の材料を曝露する表面を持つ基板を保持するための基板ホルダ回りを減圧環境に維持し、1又はそれ以上の目標エッチングプロセス特性を選択し、少なくとも1つのエッチングガスを含む加圧ガスからガスクラスタイオンビーム(GCIB)を形成し;前記1又はそれ以上の目標エッチングプロセス特性を達成するために前記GCIBについてのGCIBプロセス条件の1又はそれ以上のGCIB性質を設定し;前記減圧環境を通じて前記GCIBを加速し;及び前記基板の前記表面の少なくとも1部分に前記GCIBを照射して、前記第1の材料及び前記第2の材料の少なくとも1部分をエッチングする。
【選択図】図1
Description
さらに、本発明の実施態様は、目標エッチングプロセス特性(target etch process metrics)を達成するための種々の材料のエッチングプロセスに関する。
前記散乱測定システムには、ビームプロフィルエリプソメトリ(エリプソメーター)及びビームプロフィル反射計(反射計)が組み込まれた散乱計が含まれ、これは、Therma−Wave、Inc.(1250 Reliance Way、Fremont、CA 94539)又はNanometrics、Inc.(1550 Buckeye Drive、Milpitas、CA 95035)から市販されているものが入手できる。さらに例えば、その場測定システムには、基板上を測定するように構成される集積化オプティカル・デジタル・プロフィル(ODO)モジュールが含まれ得る。
前記GCIBプロセスシステム100は、真空容器102、基板ホルダ150、その上に処理される基板152が固定される。前記GCIBプロセスシステム100はさらに真空ポンプシステム170A、170B及び170Cを含む。基板152は半導体基板、ウェハ、フラットパネルディスプレイ(FPD)、液晶ディスプレイ(LCD)、又はその他のワークピースであり得る。GCIBプロセスシステム100は基板152を処理するためにGCIBを生成するように構成される。
前記光学受信装置282は、前記制御装置190へ測定値を返す。
Claims (20)
- 基板上の材料をエッチングする方法であり、前記方法は:
第1の材料、第2の材料、及び前記第1の材料及び/又は第2の材料を曝露する表面を持つ基板を保持するための基板ホルダ回りを減圧環境に維持し;
前記基板を前記減圧環境内に確実に保持し;
1又はそれ以上の目標エッチングプロセス特性を選択し、
前記目標エッチングプロセス特性が、前記第1の材料のエッチング速度、前記第2の材料のエッチング速度、前記第1の材料と第2の材料との間のエッチング選択性、前記第1の材料の表面粗度、前記第2の材料の表面粗度、前記第1の材料のエッチングプロフィル及び前記第2の材料のエッチングプロフィルを含み;
少なくとも1つのエッチングガスを含む加圧ガスからガスクラスタイオンビーム(GCIB)を形成し;
前記1又はそれ以上の目標エッチングプロセス特性を達成するために前記GCIBについてのGCIBプロセス特性の1又はそれ以上のGCIB性質を設定し;
前記減圧環境を通じて前記GCIBを加速し;及び
前記基板の前記表面の少なくとも1部分に前記GCIBを照射して、前記第1の材料及び前記第2の材料の少なくとも1部分をエッチングする、ことを含む方法。 - 請求項1に記載の方法であり、前記GCIBプロセス条件の前記1又はそれ以上のGCIB前記性質が、GCIB組成、ビーム照射量、ビーム加速電位、ビームフォーカシング電位、ビームエネルギー、ビームエネルギー分布、ビーム角度分布、ビーム拡散角度、前記GCIB組成の流速、よどみ点圧力、よどみ点温度、前記GCIBが通過する増加圧力領域のためのバックグラウンドガス圧力、又は前記GCIBが通過する増加圧力領域のためのバックグラウンドガス流速を含む、方法。
- 請求項2に記載の方法であり、前記GCIBプロセス条件の前記1又はそれ以上のGCIB性質が、GCIB組成を含み、かる前記GCIB組成が第1のエッチングガス及び第2のエッチングを含む、方法。
- 請求項3に記載の方法であり、前記第1のエッチングガスがCl又はBrを含み、かつ前記第2のエッチングガスがFを含む、方法。
- 請求項3に記載の方法であり、前記第1のエッチングガスがCl2を含み、かつ前記第2のエッチングガスがNF3を含む、方法。
- 請求項3に記載の方法であり、前記第1のエッチングガスがハロメタン又はハロゲン化物を含み、かつ前記第2のエッチングガスがF、Cl、又はBrを含む、方法。
- 請求項3に記載の方法であり、前記第1のエッチングガスがC、H及びハロゲン元素を含み、かつ前記第2のエッチングガスがF、Cl、又はBrを含む、方法。
- 請求項3に記載の方法であり、前記第1のエッチングガスがCHF3、CHCl3、又はCHBr3を含み、かつ前記第2のエッチングガスがNF3又はCl2を含む、方法。
- 請求項3に記載の方法であり、前記第1のエッチングガス及び第2のエッチングガスが、前記照射の間に前記GCIBに連続的に導入される、方法。
- 請求項3に記載の方法であり、前記第1のエッチングガス及び第2のエッチングガスが、前記照射の間に前記GCIBに交互に順番に導入される、方法。
- 請求項2に記載の方法であり、さらに:追加のガスを前記GCIBへ導入して前記GCIB前記組成を変化させ、前記1又はそれ以上の目標エッチングプロセス特性を達成することを含む、方法。
- 請求項1に記載の方法であり、前記1又はそれ以上の目標エッチングプロセス特性を達成するための前記1又はそれ以上のGCIB性質が、
前記第1の材料及び/又は第2の材料のための2又はそれ以上の目標エッチング速度、前記第1の材料及び第2の材料との間の目標エッチング選択性及び前記第1の材料及び/又は第2の材料の目標表面粗度を達成するために、GCIB組成、ビーム加速電位、前記GCIB前記組成の流速及び前記GCIBが通過する上昇圧力領域のためのバックグラウンドガス流速を設定することを含む、方法。 - 請求項12に記載の方法であり、さらに:
前記目標エッチング選択性を1未満の値から1近く又はそれ以上に変更するように前記1又はそれ以上のGCIB性質を調節することを含む、方法。 - 請求項12に記載の方法であり、前記第1の材料及び/又は第2の材料の前記目標表面粗度が5オングストローム以下である、方法。
- 請求項1に記載の方法であり、さらに:
前記基板の上部表面を平坦化することを含む、方法。 - 請求項1に記載の方法であり、さらに:
前記1又はそれ以上の目標エッチングプロセス特性を変更して1又はそれ以上の新たな目標エッチングプロセス特性を生成し;及び
前記GCIBについて追加のGCIB前記プロセス条件の1又はそれ以上の追加のGCIB性質を設定して前記1又はそれ以上の新たな目標エッチングプロセス特性を達成する、方法。 - 請求項1に記載の方法であり、前記第1の材料がフォトレジストを含み、前記第2の材料が、Si−含有材料、Ge−含有材料、金属−含有材料、半導体材料又はカルコゲニド材料を含む方法。
- 請求項1に記載の方法であり、前記第1の材料がシリコンを含み、前記第2の材料が、Si及びO、N、C、及びGeからなる群から選択される1又はそれ以上の元素を含むSi−含有材料を含む方法。
- 請求項1に記載の方法であり、前記第1の材料がSi−含有材料を含み、前記第2の材料がGe−含有材料を含む、方法。
- 請求項1に記載の方法であり、前記第1の材料がSi−含有材料を含み、前記第2の材料が金属−含有材料を含む、方法。
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2011
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2012
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- 2012-08-31 KR KR1020120096825A patent/KR20130025357A/ko not_active Application Discontinuation
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2013
- 2013-03-14 US US13/826,600 patent/US9324567B2/en active Active
- 2013-07-25 US US13/950,862 patent/US20130309872A1/en not_active Abandoned
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Cited By (9)
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JP2015029072A (ja) * | 2013-06-10 | 2015-02-12 | エフ・イ−・アイ・カンパニー | 電子ビーム誘起エッチング |
US10304658B2 (en) | 2013-06-10 | 2019-05-28 | Fei Company | Electron beam-induced etching |
WO2016093087A1 (ja) * | 2014-12-09 | 2016-06-16 | 東京エレクトロン株式会社 | パターン形成方法、ガスクラスターイオンビーム照射装置及びパターン形成装置 |
JPWO2016093087A1 (ja) * | 2014-12-09 | 2017-09-07 | 東京エレクトロン株式会社 | パターン形成方法、ガスクラスターイオンビーム照射装置及びパターン形成装置 |
JP2017183534A (ja) * | 2016-03-30 | 2017-10-05 | 日本ゼオン株式会社 | プラズマエッチングガス及びプラズマエッチング方法 |
JP2020515047A (ja) * | 2016-12-30 | 2020-05-21 | レール・リキード−ソシエテ・アノニム・プール・レテュード・エ・レクスプロワタシオン・デ・プロセデ・ジョルジュ・クロード | 半導体構造エッチング用ヨウ素含有化合物 |
JP7227135B2 (ja) | 2016-12-30 | 2023-02-21 | レール・リキード-ソシエテ・アノニム・プール・レテュード・エ・レクスプロワタシオン・デ・プロセデ・ジョルジュ・クロード | 半導体構造エッチング用ヨウ素含有化合物 |
JP2023053121A (ja) * | 2016-12-30 | 2023-04-12 | レール・リキード-ソシエテ・アノニム・プール・レテュード・エ・レクスプロワタシオン・デ・プロセデ・ジョルジュ・クロード | 半導体構造エッチング用ヨウ素含有化合物 |
JP7470834B2 (ja) | 2016-12-30 | 2024-04-18 | レール・リキード-ソシエテ・アノニム・プール・レテュード・エ・レクスプロワタシオン・デ・プロセデ・ジョルジュ・クロード | 半導体構造エッチング用ヨウ素含有化合物 |
Also Published As
Publication number | Publication date |
---|---|
KR20130025357A (ko) | 2013-03-11 |
US9324567B2 (en) | 2016-04-26 |
US8512586B2 (en) | 2013-08-20 |
US20130309872A1 (en) | 2013-11-21 |
TWI508166B (zh) | 2015-11-11 |
US20130196509A1 (en) | 2013-08-01 |
US20130059446A1 (en) | 2013-03-07 |
TW201327666A (zh) | 2013-07-01 |
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