JP2011071180A5 - - Google Patents

Download PDF

Info

Publication number
JP2011071180A5
JP2011071180A5 JP2009218890A JP2009218890A JP2011071180A5 JP 2011071180 A5 JP2011071180 A5 JP 2011071180A5 JP 2009218890 A JP2009218890 A JP 2009218890A JP 2009218890 A JP2009218890 A JP 2009218890A JP 2011071180 A5 JP2011071180 A5 JP 2011071180A5
Authority
JP
Japan
Prior art keywords
semiconductor substrate
nitride semiconductor
main surface
chamfered portion
thickness
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2009218890A
Other languages
English (en)
Japanese (ja)
Other versions
JP2011071180A (ja
JP5040977B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from JP2009218890A external-priority patent/JP5040977B2/ja
Priority to JP2009218890A priority Critical patent/JP5040977B2/ja
Priority to TW099121576A priority patent/TWI550903B/zh
Priority to EP20100168041 priority patent/EP2302113A1/en
Priority to US12/833,145 priority patent/US8471365B2/en
Priority to CN2010102329617A priority patent/CN102034853A/zh
Publication of JP2011071180A publication Critical patent/JP2011071180A/ja
Publication of JP2011071180A5 publication Critical patent/JP2011071180A5/ja
Publication of JP5040977B2 publication Critical patent/JP5040977B2/ja
Application granted granted Critical
Priority to US13/895,924 priority patent/US20130252401A1/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2009218890A 2009-09-24 2009-09-24 窒化物半導体基板、半導体装置およびそれらの製造方法 Active JP5040977B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2009218890A JP5040977B2 (ja) 2009-09-24 2009-09-24 窒化物半導体基板、半導体装置およびそれらの製造方法
TW099121576A TWI550903B (zh) 2009-09-24 2010-06-30 氮化物半導體基板、半導體裝置及彼等之製造方法
EP20100168041 EP2302113A1 (en) 2009-09-24 2010-07-01 Nitride semiconductor substrate, semiconductor device, and methods for manufacturing nitride semiconductor substrate and semiconductor device
US12/833,145 US8471365B2 (en) 2009-09-24 2010-07-09 Nitride semiconductor substrate, semiconductor device, and methods for manufacturing nitride semiconductor substrate and semiconductor device
CN2010102329617A CN102034853A (zh) 2009-09-24 2010-07-16 氮化物半导体衬底、半导体器件及其制造方法
US13/895,924 US20130252401A1 (en) 2009-09-24 2013-05-16 Nitride semiconductor substrate, semiconductor device, and methods for manufacturing nitride semiconductor substrate and semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009218890A JP5040977B2 (ja) 2009-09-24 2009-09-24 窒化物半導体基板、半導体装置およびそれらの製造方法

Publications (3)

Publication Number Publication Date
JP2011071180A JP2011071180A (ja) 2011-04-07
JP2011071180A5 true JP2011071180A5 (enExample) 2012-05-24
JP5040977B2 JP5040977B2 (ja) 2012-10-03

Family

ID=43217049

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009218890A Active JP5040977B2 (ja) 2009-09-24 2009-09-24 窒化物半導体基板、半導体装置およびそれらの製造方法

Country Status (5)

Country Link
US (2) US8471365B2 (enExample)
EP (1) EP2302113A1 (enExample)
JP (1) JP5040977B2 (enExample)
CN (1) CN102034853A (enExample)
TW (1) TWI550903B (enExample)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5381581B2 (ja) * 2009-09-30 2014-01-08 住友電気工業株式会社 窒化ガリウム基板
JP6031733B2 (ja) * 2010-09-27 2016-11-24 住友電気工業株式会社 ＧａＮ結晶の製造方法
JP5808208B2 (ja) * 2011-09-15 2015-11-10 株式会社サイオクス 窒化物半導体基板の製造方法
US8471366B2 (en) * 2011-11-30 2013-06-25 Sumitomo Electric Industries, Ltd. Nitride semiconductor substrate
JP5451724B2 (ja) * 2011-12-08 2014-03-26 ソニー株式会社 半導体レーザ素子の製造方法
JP5982971B2 (ja) * 2012-04-10 2016-08-31 住友電気工業株式会社 炭化珪素単結晶基板
CN103374754A (zh) * 2012-04-17 2013-10-30 鑫晶钻科技股份有限公司 蓝宝石材料及其制造方法
US9040421B2 (en) 2013-05-03 2015-05-26 GlobalFoundries, Inc. Methods for fabricating integrated circuits with improved contact structures
JP5950070B1 (ja) * 2014-12-16 2016-07-13 三菱化学株式会社 ＧａＮ基板
TWI697941B (zh) * 2016-04-20 2020-07-01 晶元光電股份有限公司 基板晶圓以及ⅲ族氮化物半導體元件之製造方法
JP6851017B2 (ja) 2016-05-18 2021-03-31 パナソニックＩｐマネジメント株式会社 デバイス及びその製造方法
CN107623028B (zh) 2016-07-13 2021-02-19 环球晶圆股份有限公司 半导体基板及其加工方法
TWI626340B (zh) * 2016-07-13 2018-06-11 環球晶圓股份有限公司 半導體基板及其加工方法
JP6149988B2 (ja) * 2016-08-01 2017-06-21 住友電気工業株式会社 炭化珪素単結晶基板
US10186630B2 (en) * 2016-08-02 2019-01-22 QMAT, Inc. Seed wafer for GaN thickening using gas- or liquid-phase epitaxy
TWI636165B (zh) * 2017-08-04 2018-09-21 財團法人工業技術研究院 磊晶晶圓
US10505087B2 (en) * 2017-08-24 2019-12-10 Soko Kagaku Co., Ltd. Method for manufacturing nitride semiconductor ultraviolet light-emitting element and nitride semiconductor ultraviolet light-emitting element
JP7276644B2 (ja) * 2017-08-31 2023-05-18 日本電気硝子株式会社 支持ガラス基板及びこれを用いた積層基板
EP3943644A1 (en) * 2020-07-21 2022-01-26 SiCrystal GmbH Sic crystals with an optimal orientation of lattice planes for fissure reduction and method of producing same
DE112021003545T5 (de) * 2020-09-17 2023-04-20 Ngk Insulators, Ltd. Halbleitersubstrat von einem Nitrid eines Elements der Gruppe III
CN112820633B (zh) * 2021-01-14 2024-01-16 镓特半导体科技（上海）有限公司 氮化镓层及其同质外延生长方法
US12224344B2 (en) * 2021-04-08 2025-02-11 Semiconductor Components Industries, Llc Method and system for control of sidewall orientation in vertical gallium nitride field effect transistors
WO2023276036A1 (ja) * 2021-06-30 2023-01-05 京セラ株式会社 窒化ガリウム単結晶基板の製造方法および周期表第１３族元素窒化物単結晶基板の製造方法
DE112023000548T5 (de) * 2022-03-14 2024-10-31 Ngk Insulators, Ltd. Halbleitersubstrat von einem Nitrid eines Elements der Gruppe III und laminiertes Substrat

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5018574A (en) * 1989-11-15 1991-05-28 Atlantic Richfield Company Tubing conveyed wellbore fluid flow measurement apparatus
JPH04333820A (ja) 1991-05-10 1992-11-20 Sony Corp 二次元表示素子の特性評価装置および二次元表示素子の製造方法
JP4595198B2 (ja) * 2000-12-15 2010-12-08 ソニー株式会社 半導体発光素子及び半導体発光素子の製造方法
JP2002222746A (ja) * 2001-01-23 2002-08-09 Matsushita Electric Ind Co Ltd 窒化物半導体ウェーハ及びその製造方法
JP2002356398A (ja) * 2001-06-01 2002-12-13 Sumitomo Electric Ind Ltd 窒化ガリウムウエハ
JP2003077847A (ja) * 2001-09-06 2003-03-14 Sumitomo Chem Co Ltd ３−５族化合物半導体の製造方法
US6756426B2 (en) * 2001-12-20 2004-06-29 I-Tek, Inc. Lightweight composite material for protective pads, cushions, supports or the like and method
JP3534115B1 (ja) 2003-04-02 2004-06-07 住友電気工業株式会社 エッジ研磨した窒化物半導体基板とエッジ研磨したＧａＮ自立基板及び窒化物半導体基板のエッジ加工方法
JP4232605B2 (ja) * 2003-10-30 2009-03-04 住友電気工業株式会社 窒化物半導体基板の製造方法と窒化物半導体基板
CN101043121A (zh) * 2006-03-22 2007-09-26 三洋电机株式会社 氮化物类半导体发光元件及其制造方法
JP4928874B2 (ja) * 2006-08-31 2012-05-09 三洋電機株式会社 窒化物系半導体発光素子の製造方法および窒化物系半導体発光素子
US20070221932A1 (en) * 2006-03-22 2007-09-27 Sanyo Electric Co., Ltd. Method of fabricating nitride-based semiconductor light-emitting device and nitride-based semiconductor light-emitting device
JP4395812B2 (ja) * 2008-02-27 2010-01-13 住友電気工業株式会社 窒化物半導体ウエハ−加工方法
JP4333820B1 (ja) * 2009-01-19 2009-09-16 住友電気工業株式会社 化合物半導体基板

Similar Documents

Publication Publication Date Title
JP2011071180A5 (enExample)
WO2009020024A1 (ja) サセプタ及びシリコンエピタキシャルウェーハの製造方法
EP2445000A3 (en) Process for realising a connecting structure
JP2010016176A5 (enExample)
JP2016098166A5 (enExample)
JP2010245280A5 (enExample)
JP2010205990A5 (enExample)
JP2016174148A5 (enExample)
JP2013219206A5 (enExample)
EP2762615A3 (en) Substrate, substrate with thin film, semiconductor device, and method of manufacturing semiconductor device
SG131023A1 (en) Semiconductor heterostructure and method for forming a semiconductor heterostructure
JP2012019080A5 (enExample)
JP2009051002A5 (enExample)
JP2012253293A5 (enExample)
EP2040301A3 (en) Semiconductor device and method of manufacturing the same
JP2009295952A5 (enExample)
JP2010287883A5 (ja) 基板及び基板の作製方法
EP2075840A3 (en) Protection layer for wafer dicing and corresponding
EP1837906A3 (en) Semiconductor memory device and methods of manufacturing and operating the same
EP2363511A3 (en) Gas barrier film, film deposition method, and film deposition device
EP2031653A3 (en) Semiconductor device having multiple element formation regions and manufacturing method thereof
JP2024156000A5 (enExample)
JP2009111423A5 (ja) ＧａＮ結晶基板およびその製造方法
CN104022085A (zh) 一种基板
JP2008205888A5 (enExample)