CN102034853A - 氮化物半导体衬底、半导体器件及其制造方法 - Google Patents

氮化物半导体衬底、半导体器件及其制造方法 Download PDF

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Publication number
CN102034853A
CN102034853A CN2010102329617A CN201010232961A CN102034853A CN 102034853 A CN102034853 A CN 102034853A CN 2010102329617 A CN2010102329617 A CN 2010102329617A CN 201010232961 A CN201010232961 A CN 201010232961A CN 102034853 A CN102034853 A CN 102034853A
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China
Prior art keywords
nitride semiconductor
semiconductor substrate
plane
angle
substrate
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Pending
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CN2010102329617A
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English (en)
Chinese (zh)
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山口小百合
松本直树
三上英则
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Sumitomo Electric Industries Ltd
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Sumitomo Electric Industries Ltd
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Publication of CN102034853A publication Critical patent/CN102034853A/zh
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02021—Edge treatment, chamfering
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C30B29/406—Gallium nitride
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T83/00—Cutting
    • Y10T83/04—Processes

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Led Devices (AREA)
CN2010102329617A 2009-09-24 2010-07-16 氮化物半导体衬底、半导体器件及其制造方法 Pending CN102034853A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2009-218890 2009-09-24
JP2009218890A JP5040977B2 (ja) 2009-09-24 2009-09-24 窒化物半導体基板、半導体装置およびそれらの製造方法

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CN102034853A true CN102034853A (zh) 2011-04-27

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CN2010102329617A Pending CN102034853A (zh) 2009-09-24 2010-07-16 氮化物半导体衬底、半导体器件及其制造方法

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US (2) US8471365B2 (enExample)
EP (1) EP2302113A1 (enExample)
JP (1) JP5040977B2 (enExample)
CN (1) CN102034853A (enExample)
TW (1) TWI550903B (enExample)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103374754A (zh) * 2012-04-17 2013-10-30 鑫晶钻科技股份有限公司 蓝宝石材料及其制造方法
CN103959579A (zh) * 2011-12-08 2014-07-30 索尼公司 用于制造半导体激光器器件的方法及半导体激光器器件
CN107305920A (zh) * 2016-04-20 2017-10-31 晶元光电股份有限公司 基板晶片以及ⅲ族氮化物半导体元件的制造方法
CN107623028A (zh) * 2016-07-13 2018-01-23 环球晶圆股份有限公司 半导体基板及其加工方法
CN109390383A (zh) * 2017-08-04 2019-02-26 财团法人工业技术研究院 磊晶晶圆
CN112820633A (zh) * 2021-01-14 2021-05-18 镓特半导体科技（上海）有限公司 氮化镓层及其同质外延生长方法

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JP5381581B2 (ja) * 2009-09-30 2014-01-08 住友電気工業株式会社 窒化ガリウム基板
JP6031733B2 (ja) * 2010-09-27 2016-11-24 住友電気工業株式会社 ＧａＮ結晶の製造方法
JP5808208B2 (ja) * 2011-09-15 2015-11-10 株式会社サイオクス 窒化物半導体基板の製造方法
US8471366B2 (en) * 2011-11-30 2013-06-25 Sumitomo Electric Industries, Ltd. Nitride semiconductor substrate
JP5982971B2 (ja) * 2012-04-10 2016-08-31 住友電気工業株式会社 炭化珪素単結晶基板
US9040421B2 (en) * 2013-05-03 2015-05-26 GlobalFoundries, Inc. Methods for fabricating integrated circuits with improved contact structures
WO2016098518A1 (ja) * 2014-12-16 2016-06-23 三菱化学株式会社 ＧａＮ基板
JP6851017B2 (ja) 2016-05-18 2021-03-31 パナソニックＩｐマネジメント株式会社 デバイス及びその製造方法
TWI626340B (zh) * 2016-07-13 2018-06-11 環球晶圓股份有限公司 半導體基板及其加工方法
JP6149988B2 (ja) * 2016-08-01 2017-06-21 住友電気工業株式会社 炭化珪素単結晶基板
US10186630B2 (en) * 2016-08-02 2019-01-22 QMAT, Inc. Seed wafer for GaN thickening using gas- or liquid-phase epitaxy
WO2019038877A1 (ja) * 2017-08-24 2019-02-28 創光科学株式会社 窒化物半導体紫外線発光素子の製造方法及び窒化物半導体紫外線発光素子
JP7276644B2 (ja) * 2017-08-31 2023-05-18 日本電気硝子株式会社 支持ガラス基板及びこれを用いた積層基板
EP3943644A1 (en) * 2020-07-21 2022-01-26 SiCrystal GmbH Sic crystals with an optimal orientation of lattice planes for fissure reduction and method of producing same
JP6978641B1 (ja) * 2020-09-17 2021-12-08 日本碍子株式会社 Ｉｉｉ族元素窒化物半導体基板
US12224344B2 (en) * 2021-04-08 2025-02-11 Semiconductor Components Industries, Llc Method and system for control of sidewall orientation in vertical gallium nitride field effect transistors
WO2023276036A1 (ja) 2021-06-30 2023-01-05 京セラ株式会社 窒化ガリウム単結晶基板の製造方法および周期表第１３族元素窒化物単結晶基板の製造方法
DE112023000548T5 (de) * 2022-03-14 2024-10-31 Ngk Insulators, Ltd. Halbleitersubstrat von einem Nitrid eines Elements der Gruppe III und laminiertes Substrat

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WO1991007567A1 (en) * 1989-11-15 1991-05-30 Atlantic Richfield Company Tubing conveyed wellbore fluid flow measurement apparatus
JP2002222746A (ja) * 2001-01-23 2002-08-09 Matsushita Electric Ind Co Ltd 窒化物半導体ウェーハ及びその製造方法
JP2002356398A (ja) * 2001-06-01 2002-12-13 Sumitomo Electric Ind Ltd 窒化ガリウムウエハ
US6756426B2 (en) * 2001-12-20 2004-06-29 I-Tek, Inc. Lightweight composite material for protective pads, cushions, supports or the like and method
JP2004319951A (ja) * 2003-04-02 2004-11-11 Sumitomo Electric Ind Ltd エッジ研磨した窒化物半導体基板とエッジ研磨したＧａＮ自立基板及び窒化物半導体基板のエッジ加工方法
CN1612290A (zh) * 2003-10-30 2005-05-04 住友电气工业株式会社 半导体用氮化物衬底的制备方法及氮化物半导体衬底
CN101043121A (zh) * 2006-03-22 2007-09-26 三洋电机株式会社 氮化物类半导体发光元件及其制造方法
WO2009107567A1 (ja) * 2008-02-27 2009-09-03 住友電気工業株式会社 窒化物半導体ウエハーの加工方法と窒化物半導体ウエハー及び窒化物半導体デバイスの製造方法並びに窒化物半導体デバイス
CN102112666A (zh) * 2009-01-19 2011-06-29 住友电气工业株式会社 化合物半导体衬底、半导体器件及其制造方法

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JPH04333820A (ja) 1991-05-10 1992-11-20 Sony Corp 二次元表示素子の特性評価装置および二次元表示素子の製造方法
JP4595198B2 (ja) * 2000-12-15 2010-12-08 ソニー株式会社 半導体発光素子及び半導体発光素子の製造方法
JP2003077847A (ja) * 2001-09-06 2003-03-14 Sumitomo Chem Co Ltd ３−５族化合物半導体の製造方法
US20070221932A1 (en) * 2006-03-22 2007-09-27 Sanyo Electric Co., Ltd. Method of fabricating nitride-based semiconductor light-emitting device and nitride-based semiconductor light-emitting device
JP4928874B2 (ja) * 2006-08-31 2012-05-09 三洋電機株式会社 窒化物系半導体発光素子の製造方法および窒化物系半導体発光素子

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1991007567A1 (en) * 1989-11-15 1991-05-30 Atlantic Richfield Company Tubing conveyed wellbore fluid flow measurement apparatus
JP2002222746A (ja) * 2001-01-23 2002-08-09 Matsushita Electric Ind Co Ltd 窒化物半導体ウェーハ及びその製造方法
JP2002356398A (ja) * 2001-06-01 2002-12-13 Sumitomo Electric Ind Ltd 窒化ガリウムウエハ
US6756426B2 (en) * 2001-12-20 2004-06-29 I-Tek, Inc. Lightweight composite material for protective pads, cushions, supports or the like and method
JP2004319951A (ja) * 2003-04-02 2004-11-11 Sumitomo Electric Ind Ltd エッジ研磨した窒化物半導体基板とエッジ研磨したＧａＮ自立基板及び窒化物半導体基板のエッジ加工方法
CN1612290A (zh) * 2003-10-30 2005-05-04 住友电气工业株式会社 半导体用氮化物衬底的制备方法及氮化物半导体衬底
CN101043121A (zh) * 2006-03-22 2007-09-26 三洋电机株式会社 氮化物类半导体发光元件及其制造方法
WO2009107567A1 (ja) * 2008-02-27 2009-09-03 住友電気工業株式会社 窒化物半導体ウエハーの加工方法と窒化物半導体ウエハー及び窒化物半導体デバイスの製造方法並びに窒化物半導体デバイス
CN102112666A (zh) * 2009-01-19 2011-06-29 住友电气工业株式会社 化合物半导体衬底、半导体器件及其制造方法

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103959579A (zh) * 2011-12-08 2014-07-30 索尼公司 用于制造半导体激光器器件的方法及半导体激光器器件
CN103374754A (zh) * 2012-04-17 2013-10-30 鑫晶钻科技股份有限公司 蓝宝石材料及其制造方法
CN107305920A (zh) * 2016-04-20 2017-10-31 晶元光电股份有限公司 基板晶片以及ⅲ族氮化物半导体元件的制造方法
CN107305920B (zh) * 2016-04-20 2020-04-07 晶元光电股份有限公司 基板晶片以及ⅲ族氮化物半导体元件的制造方法
CN107623028A (zh) * 2016-07-13 2018-01-23 环球晶圆股份有限公司 半导体基板及其加工方法
CN107623028B (zh) * 2016-07-13 2021-02-19 环球晶圆股份有限公司 半导体基板及其加工方法
CN109390383A (zh) * 2017-08-04 2019-02-26 财团法人工业技术研究院 磊晶晶圆
CN112820633A (zh) * 2021-01-14 2021-05-18 镓特半导体科技（上海）有限公司 氮化镓层及其同质外延生长方法
CN112820633B (zh) * 2021-01-14 2024-01-16 镓特半导体科技（上海）有限公司 氮化镓层及其同质外延生长方法

Also Published As

Publication number Publication date
TWI550903B (zh) 2016-09-21
EP2302113A1 (en) 2011-03-30
JP2011071180A (ja) 2011-04-07
US20110068434A1 (en) 2011-03-24
US20130252401A1 (en) 2013-09-26
TW201121096A (en) 2011-06-16
JP5040977B2 (ja) 2012-10-03
US8471365B2 (en) 2013-06-25

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Application publication date: 20110427